Abstract: An integrated fluxgate device, which includes a magnetic core, an excitation coil, and a sense coil. The magnetic core has a longitudinal edge and a terminal edge. The excitation coil coils around the longitudinal edge of the magnetic core, and the excitation coil has a first number of excitation coil members within a proximity of the terminal edge. The sense coil coils around the longitudinal edge of the magnetic core, and the sense coil has a second number of sense coil members within the proximity of the terminal edge. For reducing fluxgate noise, the second number of sense coil members may be less than the first number of excitation coil members within the proximity of the terminal edge.

Abstract: A magnetic sensor has a circuit segment with a quadrupole region. The quadrupole region includes a supply line, a first return line and a second return line, all in a conductor layer. The first supply line is laterally adjacent to the supply line on a first side, and the second return line is laterally adjacent to the supply line on a second, opposite side. A space between the supply line and the first return line is free of the conductor layer; similarly, a space between the supply line and the second return line is free of the conductor layer. The first return line and the second return line are electrically coupled to the supply line at a terminus of the circuit segment.

Abstract: Disclosed examples provide wafer-level integration of magnetoresistive sensors and Hall-effect sensors in a single integrated circuit, in which one or more vertical and/or horizontal Hall sensors are formed on or in a substrate along with transistors and other circuitry, and a magnetoresistive sensor circuit is formed in the IC metallization structure.

Abstract: A microelectronic device, possibly a packaged microelectronic device, contains a magnetic sensor component and magnetizable structural features. Magnetic moments of the magnetizable structural features are aligned parallel to each other. The microelectronic device is formed by applying a magnetic field so as to align magnetic moments of the magnetizable structural features with the applied magnetic field. Application of the magnetic field is subsequently discontinued. The magnetic moments of the magnetizable structural features remain aligned parallel to each other after the applied magnetic field is discontinued.

Abstract: An integrated device includes a substrate having a semiconductor surface layer including functional circuitry, a lower metal stack on the semiconductor surface layer, an interlevel dielectric (ILD) layer on the lower metal stack, a top metal layer providing AMR contact pads and bond pads coupled to the AMR contact pads in the ILD layer. An AMR device is above the lower metal stack lateral to the functional circuitry including a patterned AMR stack including a seed layer, an AMR material layer, and a capping layer, wherein the seed layer is coupled to the AMR contact pads by a coupling structure. A protective overcoat (PO layer) is over the AMR stack. There are openings in the PO layer exposing the bond pads.

Abstract: A method of magnetic forming an integrated fluxgate sensor includes providing a patterned magnetic core on a first nonmagnetic metal or metal alloy layer on a dielectric layer over a first metal layer that is on or in an interlevel dielectric layer (ILD) which is on a substrate. A second nonmagnetic metal or metal alloy layer is deposited including over and on sidewalls of the magnetic core. The second nonmagnetic metal or metal alloy layer is patterned, where after patterning the second nonmagnetic metal or metal alloy layer together with the first nonmagnetic metal or metal alloy layer encapsulates the magnetic core to form an encapsulated magnetic core. After patterning, the encapsulated magnetic core is magnetic field annealed using an applied magnetic field having a magnetic field strength of at least 0.1 T at a temperature of at least 150° C.

Abstract: A method of fabricating fluxgate devices to measure the magnetic field in two orthogonal, in plane directions, by using a composite-anisotropic magnetic core structure.

Abstract: A method of fabricating fluxgate devices to measure the magnetic field in two orthogonal, in plane directions, by using a composite-anisotropic magnetic core structure.

Abstract: An integrated fluxgate device, which includes a magnetic core, an excitation coil, and a sense coil. The magnetic core has a longitudinal edge and a terminal edge. The excitation coil coils around the longitudinal edge of the magnetic core, and the excitation coil has a first number of excitation coil members within a proximity of the terminal edge. The sense coil coils around the longitudinal edge of the magnetic core, and the sense coil has a second number of sense coil members within the proximity of the terminal edge. For reducing fluxgate noise, the second number of sense coil members may be less than the first number of excitation coil members within the proximity of the terminal edge.

Abstract: A method of fabricating fluxgate devices to measure the magnetic field in two orthogonal, in plane directions, by using a composite-anisotropic magnetic core structure.

Abstract: A method of fabricating fluxgate devices to measure the magnetic field in two orthogonal, in plane directions, by using a composite-anisotropic magnetic core structure.

Abstract: An integrated circuit includes a fluxgate magnetometer. The magnetic core of the fluxgate magnetometer is encapsulated with a layer of encapsulant of a nonmagnetic metal or a nonmagnetic alloy. The layer of encapsulate provides stress relaxation between the magnetic core material and the surrounding dielectric. A method for forming an integrated circuit has the magnetic core of a fluxgate magnetometer encapsulated with a layer of a nonmagnetic metal or nonmagnetic alloy to eliminate delamination and to substantially reduce cracking of the dielectric that surrounds the magnetic core.

Abstract: An inductor conductor design which minimizes the impact of skin effect in the conductors at high frequencies in integrated circuits and the method of manufacture thereof is described herein.

Abstract: A method of manufacturing an inductor on a wafer level process that can operate at 20 MHz with good efficiency and a high inductance density is disclosed, wherein the inductor design allows high frequency operation, low RDSON values and high efficiency.

Abstract: A method of fabricating fluxgate devices to measure the magnetic field in two orthogonal, in plane directions, by using a composite-anisotropic magnetic core structure.

Abstract: A laminated magnetic core, which has a number of magnetic layers and a number of insulation layers which are arranged so that an insulation layer lies between each vertically adjacent pair of magnetic layers, is formed in a method that forms the magnetic layers with an electroplating process, and the insulation layers with a sputter depositing process.

Abstract: A laminated magnetic core, which has a number of magnetic layers and a number of insulation layers which are arranged so that an insulation layer lies between each vertically adjacent pair of magnetic layers, is formed in a method that forms the magnetic layers with an electroplating process, and the insulation layers with a sputter depositing process.

Abstract: A plurality of sequential electro-deposition, planarization and insulator deposition steps are performed over a patterned thick photoresist film to form a laminated ferromagnetic alloy core for micro-fabricated inductors and transformers. The use of a plurality of contiguous thin laminations within deep patterns on non-removable photoresist film provides sufficient volume of magnetic film in, for example, high frequency applications, and reduces eddy current loss at high frequency.

Abstract: A micro-electromechanical systems (MEMS) relay includes a switch with a first contact region and a second contact region that are vertically separated from each other by a gap. The MEMS relay requires a small vertical movement to close the gap and therefore is mechanically robust. In addition, the MEMS relay has a small footprint and, therefore, can be formed on top of small integrated circuits.

Abstract: A plurality of sequential electro-deposition, planarization and insulator deposition steps are performed over a patterned thick photoresist film to form a laminated ferromagnetic alloy core for micro-fabricated inductors and transformers. The use of a plurality of contiguous thin laminations within deep patterns on non-removable photoresist film provides sufficient volume of magnetic film in, for example, high frequency applications, and reduces eddy current loss at high frequency.