Patents by Inventor Dominik Eisert

Dominik Eisert has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220140204
    Abstract: A wavelength converter may include a phosphor layer and a filter layer where the filter layer may be directly attached to the phosphor layer. The wavelength converter may have an overall thickness ranging from 20 ?m to 80 ?m. A light emitting device assembly and methods for preparing a wavelength converter and methods for preparing a light emitting device assembly are also disclosed.
    Type: Application
    Filed: February 5, 2020
    Publication date: May 5, 2022
    Inventors: Yi ZHENG, Dominik EISERT, Georg ROSSBACH
  • Patent number: 10903398
    Abstract: The present invention is directed to a wavelength converter comprising: —a phosphor layer and—a filter layer, wherein the filter layer is directly attached to the phosphor layer and wherein the wavelength converter has an overall thickness of between 20 ?m to 80 ?m. Furthermore, the present invention is directed to a light emitting device assembly and methods for preparing a wavelength converter and methods for preparing a light emitting device assembly.
    Type: Grant
    Filed: February 6, 2019
    Date of Patent: January 26, 2021
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Yi Zheng, Dominik Eisert, Georg Rossbach
  • Publication number: 20200251621
    Abstract: The present invention is directed to a wavelength converter comprising: —a phosphor layer and —a filter layer, wherein the filter layer is directly attached to the phosphor layer and wherein the wavelength converter has an overall thickness of between 20 ?m to 80 ?m. Furthermore, the present invention is directed to a light emitting device assembly and methods for preparing a wavelength converter and methods for preparing a light emitting device assembly.
    Type: Application
    Filed: February 6, 2019
    Publication date: August 6, 2020
    Inventors: Yi Zheng, Dominik Eisert, Georg Rossbach
  • Publication number: 20200251622
    Abstract: A conversion element, a radiation-emitting semiconductor device and a method for producing a conversion element are disclosed. In an embodiment a conversion element includes a ceramic luminescent material and a flux material, wherein the flux material has a boiling temperature above 1500° C. and/or a melting temperature below 1500° C., and wherein the flux material has a concentration in the conversion element between at least 0.01 wt % and at most 1 wt %.
    Type: Application
    Filed: February 6, 2019
    Publication date: August 6, 2020
    Inventors: Dominik Eisert, Yi Zheng, Victor Perez, Juliane Kechele, Johanna Strube-Knyrim
  • Publication number: 20190386183
    Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a semiconductor layer sequence having an active region configured to emit radiation at least via a main radiation exit surface during operation and a self-supporting conversion element arranged in a beam path of the semiconductor layer sequence, wherein the self-supporting conversion element includes a substrate and subsequently a first layer, wherein the first layer includes at least one conversion material embedded in a matrix material, wherein the matrix material includes at least one condensed sol-gel material, wherein the condensed sol-gel material has a proportion between 10 and 70 vol % in the first layer, and wherein the substrate is free of the sol-gel material and the conversion material and mechanically stabilizes the first layer.
    Type: Application
    Filed: February 26, 2018
    Publication date: December 19, 2019
    Inventors: Jörg Frischeisen, Angela Eberhardt, Florian Peskoller, Thomas Huckenbeck, Michael Schmidberger, Jürgen Bauer, Dominik Eisert, Albert Schneider
  • Patent number: 10411170
    Abstract: A radiation-emitting optoelectronic device, a method for using a radiation-emitting optoelectronic device and a method for making a radiation-emitting optoelectronic device are disclosed. In an embodiment, the device includes a semiconductor chip configured to emit a primary radiation and a conversion element including a conversion material which comprises Cr and/or Ni ions and a host material and which, during operation of the device, converts the primary radiation emitted by the semiconductor chip into a secondary radiation of a wavelength between 700 nm and 2000 nm, wherein the host material comprises EAGa12O19, AyGa5O(15+y)/2, AE3Ga2O14, Ln3Ga5GeO14, Ga2O3, Ln3Ga5.5D0.5O14 or Mg4D2O9, wherein EA=Mg, Ca, Sr and/or Ba, A=Li, Na, K and/or Rb, AE=Mg, Ca, Sr and/or Ba, Ln=La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and/or Lu and D=Nb and/or Ta, and wherein y=0.9-1.9.
    Type: Grant
    Filed: April 29, 2016
    Date of Patent: September 10, 2019
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Sonja Tragl, Dominik Eisert, Stefan Lange, Nils Kaufmann, Alexander Martin, Krister Bergenek
  • Patent number: 10233388
    Abstract: A lighting device includes a radiation source that emits primary radiation in the wavelength range of 300 nm to 570 nm, a first phosphor arranged in a beam path of the primary radiation source that converts at least part of the primary radiation into secondary radiation in an orange to red wavelength range of 570 nm to 800 nm, and filter particles arranged in a beam path of the secondary radiation that absorb at least part of the secondary radiation.
    Type: Grant
    Filed: March 25, 2015
    Date of Patent: March 19, 2019
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Rebecca Römer, Stefan Lange, Dominik Eisert
  • Publication number: 20180358514
    Abstract: A radiation-emitting optoelectronic device, a method for using a radiation-emitting optoelectronic device and a method for making a radiation-emitting optoelectronic device are disclosed. In an embodiment, the device includes a semiconductor chip configured to emit a primary radiation and a conversion element including a conversion material which comprises Cr and/or Ni ions and a host material and which, during operation of the device, converts the primary radiation emitted by the semiconductor chip into a secondary radiation of a wavelength between 700 nm and 2000 nm, wherein the host material comprises EAGa12O19, AyGa5O(15+y)/2, AE3Ga2O14, Ln3Ga5GeO14, Ga2O3, Ln3Ga5.5D0.5O14 or Mg4D2O9, wherein EA=Mg, Ca, Sr and/or Ba, A=Li, Na, K and/or Rb, AE=Mg, Ca, Sr and/or Ba, Ln=La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and/or Lu and D=Nb and/or Ta, and wherein y=0.9-1.9.
    Type: Application
    Filed: April 29, 2016
    Publication date: December 13, 2018
    Inventors: Sonja Tragl, Dominik Eisert, Stefan Lange, Nils Kaufmann, Alexander Martin, Krister Bergenek
  • Publication number: 20180298281
    Abstract: A composite oxynitride ceramic converter and a light source having the same are disclosed. In an embodiment the composite oxynitride ceramic converter includes a first phase of a triclinic SrSi2O2N2:Eu phosphor and a second phase of a hexagonal Sr3Si6N4O9:Eu phosphor.
    Type: Application
    Filed: June 7, 2016
    Publication date: October 18, 2018
    Inventors: Zhengbo Yu, Jason Montaner, Madis Raukas, Yi Zheng, Sonja Tragl, Dominik Eisert
  • Patent number: 9882097
    Abstract: An optoelectronic semiconductor chip includes a semiconductor body that emits primary light, and a luminescence conversion element that emits secondary light by wavelength conversion of at least part of the primary light, wherein the luminescence conversion element has a first lamina fixed to a first partial region of an outer surface of the semiconductor body, the outer surface emitting primary light, and leaving free a second partial region of the outer surface, the luminescence conversion element has a second lamina fixed to a surface of the first lamina facing away from the semiconductor body and spaced apart from the semiconductor body, the first lamina is at least partly transmissive to the primary radiation, a section of the second lamina covers at least the second partial region, and at least the section of the second lamina is absorbent and/or reflective and/or scattering for the primary radiation.
    Type: Grant
    Filed: August 3, 2016
    Date of Patent: January 30, 2018
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Dominik Eisert, Torsten Baade, Michael Zitzlsperger
  • Patent number: 9709225
    Abstract: A lighting device, in various embodiments, for generating a light emission, has a light source designed to generate light with a first dominant wavelength, a first converter designed to absorb the light generated by the light source and to emit light with a second dominant wavelength, which is longer than the first dominant wavelength, and a second converter designed to absorb a portion of the light emitted by the first converter and to emit light such that the light emission has a third dominant wavelength, which is longer than the second dominant wavelength.
    Type: Grant
    Filed: September 2, 2013
    Date of Patent: July 18, 2017
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Ion Stoll, Dominik Eisert, Britta Göötz, Robert Schulz
  • Publication number: 20170037308
    Abstract: A lighting device includes a radiation source that emits primary radiation in the wavelength range of 300 nm to 570 nm, a first phosphor arranged in a beam path of the primary radiation source that converts at least part of the primary radiation into secondary radiation in an orange to red wavelength range of 570 nm to 800 nm, and filter particles arranged in a beam path of the secondary radiation that absorb at least part of the secondary radiation.
    Type: Application
    Filed: March 25, 2015
    Publication date: February 9, 2017
    Inventors: Rebecca Römer, Stefan Lange, Dominik Eisert
  • Publication number: 20160343917
    Abstract: An optoelectronic semiconductor chip includes a semiconductor body that emits primary light, and a luminescence conversion element that emits secondary light by wavelength conversion of at least part of the primary light, wherein the luminescence conversion element has a first lamina fixed to a first partial region of an outer surface of the semiconductor body, the outer surface emitting primary light, and leaving free a second partial region of the outer surface, the luminescence conversion element has a second lamina fixed to a surface of the first lamina facing away from the semiconductor body and spaced apart from the semiconductor body, the first lamina is at least partly transmissive to the primary radiation, a section of the second lamina covers at least the second partial region, and at least the section of the second lamina is absorbent and/or reflective and/or scattering for the primary radiation.
    Type: Application
    Filed: August 3, 2016
    Publication date: November 24, 2016
    Inventors: Dominik Eisert, Torsten Baade, Michael Zitzlsperger
  • Patent number: 9444022
    Abstract: An optoelectronic semiconductor chip includes a semiconductor body that emits primary light, and a luminescence conversion element that emits secondary light by wavelength conversion of at least part of the primary light, wherein the luminescence conversion element has a first lamina fixed to a first partial region of an outer surface of the semiconductor body, the outer surface emitting primary light, and leaves free a second partial region of the outer surface, the luminescence conversion element has a second lamina fixed to a surface of the first lamina facing away from the semiconductor body and spaced apart from the semiconductor body, the first lamina is at least partly transmissive to the primary radiation, a section of the second lamina covers at least the second partial region, and at least the section of the second lamina is designed to be absorbent and/or reflective and/or scattering for the primary radiation.
    Type: Grant
    Filed: May 18, 2012
    Date of Patent: September 13, 2016
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Dominik Eisert, Torsten Baade, Michael Zitzlsperger
  • Patent number: 9431586
    Abstract: A ceramic conversion element includes a first ceramic layer having a first luminescent material, which transforms electromagnetic radiation of a first wavelength range into electromagnetic radiation of a second wavelength range. A second ceramic layer includes a second luminescent material, which transforms electromagnetic radiation of the first wavelength range into electromagnetic radiation of a third wavelength range. The first luminescent material and the second luminescent material are based on at least one inorganic compound containing oxygen and are different from one another. An optoelectronic component with a ceramic conversion element and a method for producing a ceramic conversion element are also specified.
    Type: Grant
    Filed: October 8, 2013
    Date of Patent: August 30, 2016
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Dominik Eisert, Ion Stoll
  • Publication number: 20150270453
    Abstract: A ceramic conversion element includes a first ceramic layer having a first luminescent material, which transforms electromagnetic radiation of a first wavelength range into electromagnetic radiation of a second wavelength range. A second ceramic layer includes a second luminescent material, which transforms electromagnetic radiation of the first wavelength range into electromagnetic radiation of a third wavelength range. The first luminescent material and the second luminescent material are based on at least one inorganic compound containing oxygen and are different from one another. An optoelectronic component with a ceramic conversion element and a method for producing a ceramic conversion element are also specified.
    Type: Application
    Filed: October 8, 2013
    Publication date: September 24, 2015
    Inventors: Dominik Eisert, Ion Stoll
  • Publication number: 20150252963
    Abstract: A lighting device, in various embodiments, for generating a light emission, has a light source designed to generate light with a first dominant wavelength, a first converter designed to absorb the light generated by the light source and to emit light with a second dominant wavelength, which is longer than the first dominant wavelength, and a second converter designed to absorb a portion of the light emitted by the first converter and to emit light such that the light emission has a third dominant wavelength, which is longer than the second dominant wavelength.
    Type: Application
    Filed: September 2, 2013
    Publication date: September 10, 2015
    Inventors: Ion Stoll, Dominik Eisert, Britta Göötz, Robert Schulz
  • Patent number: 9076933
    Abstract: A ceramic conversion element includes an active ceramic layer that converts electromagnetic radiation in a first wavelength range into electromagnetic radiation in a second wavelength range, which is different from the first wavelength range, and a carrier layer transmissive to radiation in the first wavelength range and/or radiation in the second wavelength range, wherein an inhibitor layer is arranged between the active layer and the carrier layer, the inhibitor layer reducing diffusion of activator ions from the active layer into the carrier layer.
    Type: Grant
    Filed: January 17, 2012
    Date of Patent: July 7, 2015
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Ute Liepold, Dominik Eisert
  • Patent number: 8962361
    Abstract: A method is provided for producing a radiation-emitting semiconductor chip, in which a first wavelength-converting layer is applied over the radiation exit face of a semiconductor body. The application method is selected from the following group: sedimentation, electrophoresis. In addition, a second wavelength-converting layer is applied over the radiation exit face of the semiconductor body. The second wavelength-converting layer is either produced in a separate method step and then applied or the application method is sedimentation, electrophoresis or printing. Furthermore, a radiation-emitting semiconductor chip and a radiation-emitting component are provided.
    Type: Grant
    Filed: November 23, 2011
    Date of Patent: February 24, 2015
    Assignee: Osram Opto Semiconductors GmbH
    Inventors: Kirstin Petersen, Frank Baumann, Dominik Eisert, Hailing Cui
  • Patent number: 8809086
    Abstract: A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body and an interlayer. A coefficient of thermal expansion of the substrate body is similar to or preferably greater than the coefficient of thermal expansion of the GaN-based layers, and the GaN-based layers are deposited on the interlayer. The interlayer and the substrate body are preferably joined by a wafer bonding process.
    Type: Grant
    Filed: February 16, 2012
    Date of Patent: August 19, 2014
    Assignee: OSRAM GmbH
    Inventors: Stefan Bader, Dominik Eisert, Berthold Hahn, Volker Härle