Abstract: A wavelength converter may include a phosphor layer and a filter layer where the filter layer may be directly attached to the phosphor layer. The wavelength converter may have an overall thickness ranging from 20 ?m to 80 ?m. A light emitting device assembly and methods for preparing a wavelength converter and methods for preparing a light emitting device assembly are also disclosed.

Abstract: An optoelectronic component includes a semiconductor chip with a plurality of emitters that emit a primary radiation in a main radiation direction in a first state and do not emit primary radiation in a second state, and an absorber arranged subsequent to the emitters in the main radiation direction, wherein the absorber includes a lower absorption coefficient in first regions associated with emitters in the first state than in second regions associated with emitters in the second state, a conversion layer arranged in the main radiation direction on at least one emitter of the semiconductor chip, and 1) the absorber is present in particle form embedded in the conversion layer, or 2) the absorber is present in an absorber layer, wherein the absorber layer is arranged in the main radiation direction on a side of the conversion layer facing away from the chip, and the absorber layer is electrically contacted.

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a semiconductor layer sequence having an active region configured to emit radiation at least via a main radiation exit surface during operation and a self-supporting conversion element arranged in a beam path of the semiconductor layer sequence, wherein the self-supporting conversion element includes a substrate and subsequently a first layer, wherein the first layer includes at least one conversion material embedded in a matrix material, wherein the matrix material includes at least one condensed sol-gel material, wherein the condensed sol-gel material has a proportion between 10 and 70 vol % in the first layer, and wherein the substrate is free of the sol-gel material and the conversion material and mechanically stabilizes the first layer.

Abstract: A wavelength converter may include a phosphor layer and a filter layer where the filter layer may be directly attached to the phosphor layer. The wavelength converter may have an overall thickness ranging from 20 ?m to 80 ?m. A light emitting device assembly and methods for preparing a wavelength converter and methods for preparing a light emitting device assembly are also disclosed.

Abstract: The present invention is directed to a wavelength converter comprising: —a phosphor layer and—a filter layer, wherein the filter layer is directly attached to the phosphor layer and wherein the wavelength converter has an overall thickness of between 20 ?m to 80 ?m. Furthermore, the present invention is directed to a light emitting device assembly and methods for preparing a wavelength converter and methods for preparing a light emitting device assembly.

Abstract: A conversion element, a radiation-emitting semiconductor device and a method for producing a conversion element are disclosed. In an embodiment a conversion element includes a ceramic luminescent material and a flux material, wherein the flux material has a boiling temperature above 1500° C. and/or a melting temperature below 1500° C., and wherein the flux material has a concentration in the conversion element between at least 0.01 wt % and at most 1 wt %.

Abstract: The present invention is directed to a wavelength converter comprising: —a phosphor layer and —a filter layer, wherein the filter layer is directly attached to the phosphor layer and wherein the wavelength converter has an overall thickness of between 20 ?m to 80 ?m. Furthermore, the present invention is directed to a light emitting device assembly and methods for preparing a wavelength converter and methods for preparing a light emitting device assembly.

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a semiconductor layer sequence having an active region configured to emit radiation at least via a main radiation exit surface during operation and a self-supporting conversion element arranged in a beam path of the semiconductor layer sequence, wherein the self-supporting conversion element includes a substrate and subsequently a first layer, wherein the first layer includes at least one conversion material embedded in a matrix material, wherein the matrix material includes at least one condensed sol-gel material, wherein the condensed sol-gel material has a proportion between 10 and 70 vol % in the first layer, and wherein the substrate is free of the sol-gel material and the conversion material and mechanically stabilizes the first layer.

Abstract: A radiation-emitting optoelectronic device, a method for using a radiation-emitting optoelectronic device and a method for making a radiation-emitting optoelectronic device are disclosed. In an embodiment, the device includes a semiconductor chip configured to emit a primary radiation and a conversion element including a conversion material which comprises Cr and/or Ni ions and a host material and which, during operation of the device, converts the primary radiation emitted by the semiconductor chip into a secondary radiation of a wavelength between 700 nm and 2000 nm, wherein the host material comprises EAGa12O19, AyGa5O(15+y)/2, AE3Ga2O14, Ln3Ga5GeO14, Ga2O3, Ln3Ga5.5D0.5O14 or Mg4D2O9, wherein EA=Mg, Ca, Sr and/or Ba, A=Li, Na, K and/or Rb, AE=Mg, Ca, Sr and/or Ba, Ln=La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and/or Lu and D=Nb and/or Ta, and wherein y=0.9-1.9.

Abstract: A lighting device includes a radiation source that emits primary radiation in the wavelength range of 300 nm to 570 nm, a first phosphor arranged in a beam path of the primary radiation source that converts at least part of the primary radiation into secondary radiation in an orange to red wavelength range of 570 nm to 800 nm, and filter particles arranged in a beam path of the secondary radiation that absorb at least part of the secondary radiation.

Abstract: A radiation-emitting optoelectronic device, a method for using a radiation-emitting optoelectronic device and a method for making a radiation-emitting optoelectronic device are disclosed. In an embodiment, the device includes a semiconductor chip configured to emit a primary radiation and a conversion element including a conversion material which comprises Cr and/or Ni ions and a host material and which, during operation of the device, converts the primary radiation emitted by the semiconductor chip into a secondary radiation of a wavelength between 700 nm and 2000 nm, wherein the host material comprises EAGa12O19, AyGa5O(15+y)/2, AE3Ga2O14, Ln3Ga5GeO14, Ga2O3, Ln3Ga5.5D0.5O14 or Mg4D2O9, wherein EA=Mg, Ca, Sr and/or Ba, A=Li, Na, K and/or Rb, AE=Mg, Ca, Sr and/or Ba, Ln=La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and/or Lu and D=Nb and/or Ta, and wherein y=0.9-1.9.

Abstract: A composite oxynitride ceramic converter and a light source having the same are disclosed. In an embodiment the composite oxynitride ceramic converter includes a first phase of a triclinic SrSi2O2N2:Eu phosphor and a second phase of a hexagonal Sr3Si6N4O9:Eu phosphor.

Abstract: An optoelectronic semiconductor chip includes a semiconductor body that emits primary light, and a luminescence conversion element that emits secondary light by wavelength conversion of at least part of the primary light, wherein the luminescence conversion element has a first lamina fixed to a first partial region of an outer surface of the semiconductor body, the outer surface emitting primary light, and leaving free a second partial region of the outer surface, the luminescence conversion element has a second lamina fixed to a surface of the first lamina facing away from the semiconductor body and spaced apart from the semiconductor body, the first lamina is at least partly transmissive to the primary radiation, a section of the second lamina covers at least the second partial region, and at least the section of the second lamina is absorbent and/or reflective and/or scattering for the primary radiation.

Abstract: A lighting device, in various embodiments, for generating a light emission, has a light source designed to generate light with a first dominant wavelength, a first converter designed to absorb the light generated by the light source and to emit light with a second dominant wavelength, which is longer than the first dominant wavelength, and a second converter designed to absorb a portion of the light emitted by the first converter and to emit light such that the light emission has a third dominant wavelength, which is longer than the second dominant wavelength.

Abstract: A lighting device includes a radiation source that emits primary radiation in the wavelength range of 300 nm to 570 nm, a first phosphor arranged in a beam path of the primary radiation source that converts at least part of the primary radiation into secondary radiation in an orange to red wavelength range of 570 nm to 800 nm, and filter particles arranged in a beam path of the secondary radiation that absorb at least part of the secondary radiation.

Abstract: An optoelectronic semiconductor chip includes a semiconductor body that emits primary light, and a luminescence conversion element that emits secondary light by wavelength conversion of at least part of the primary light, wherein the luminescence conversion element has a first lamina fixed to a first partial region of an outer surface of the semiconductor body, the outer surface emitting primary light, and leaving free a second partial region of the outer surface, the luminescence conversion element has a second lamina fixed to a surface of the first lamina facing away from the semiconductor body and spaced apart from the semiconductor body, the first lamina is at least partly transmissive to the primary radiation, a section of the second lamina covers at least the second partial region, and at least the section of the second lamina is absorbent and/or reflective and/or scattering for the primary radiation.

Abstract: An optoelectronic semiconductor chip includes a semiconductor body that emits primary light, and a luminescence conversion element that emits secondary light by wavelength conversion of at least part of the primary light, wherein the luminescence conversion element has a first lamina fixed to a first partial region of an outer surface of the semiconductor body, the outer surface emitting primary light, and leaves free a second partial region of the outer surface, the luminescence conversion element has a second lamina fixed to a surface of the first lamina facing away from the semiconductor body and spaced apart from the semiconductor body, the first lamina is at least partly transmissive to the primary radiation, a section of the second lamina covers at least the second partial region, and at least the section of the second lamina is designed to be absorbent and/or reflective and/or scattering for the primary radiation.

Abstract: A ceramic conversion element includes a first ceramic layer having a first luminescent material, which transforms electromagnetic radiation of a first wavelength range into electromagnetic radiation of a second wavelength range. A second ceramic layer includes a second luminescent material, which transforms electromagnetic radiation of the first wavelength range into electromagnetic radiation of a third wavelength range. The first luminescent material and the second luminescent material are based on at least one inorganic compound containing oxygen and are different from one another. An optoelectronic component with a ceramic conversion element and a method for producing a ceramic conversion element are also specified.

Abstract: A ceramic conversion element includes a first ceramic layer having a first luminescent material, which transforms electromagnetic radiation of a first wavelength range into electromagnetic radiation of a second wavelength range. A second ceramic layer includes a second luminescent material, which transforms electromagnetic radiation of the first wavelength range into electromagnetic radiation of a third wavelength range. The first luminescent material and the second luminescent material are based on at least one inorganic compound containing oxygen and are different from one another. An optoelectronic component with a ceramic conversion element and a method for producing a ceramic conversion element are also specified.

Abstract: A lighting device, in various embodiments, for generating a light emission, has a light source designed to generate light with a first dominant wavelength, a first converter designed to absorb the light generated by the light source and to emit light with a second dominant wavelength, which is longer than the first dominant wavelength, and a second converter designed to absorb a portion of the light emitted by the first converter and to emit light such that the light emission has a third dominant wavelength, which is longer than the second dominant wavelength.