Patents by Inventor Dominik Eisert
Dominik Eisert has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7691656Abstract: A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body and an interlayer. A coefficient of thermal expansion of the substrate body is similar to or preferably greater than the coefficient of thermal expansion of the GaN-based layers, and the GaN-based layers are deposited on the interlayer. The interlayer and the substrate body are preferably joined by a wafer bonding process.Type: GrantFiled: April 17, 2003Date of Patent: April 6, 2010Assignee: Osram GmbHInventors: Stefan Bader, Dominik Eisert, Berthold Hahn, Volker Härle
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Patent number: 7691659Abstract: This invention describes a radiation-emitting semiconductor component based on GaN, whose semiconductor body is made up of a stack of different GaN semiconductor layers (1). The semiconductor body has a first principal surface (3) and a second principal surface (4), with the radiation produced being emitted through the first principal surface (3) and with a reflector (6) being produced on the second principal surface (4). The invention also describes a production method for a semiconductor component pursuant to the invention. An interlayer (9) is first applied to a substrate (8), and a plurality of GaN layers (1) that constitute the semiconductor body of the component are then applied to this. The substrate (8) and the interlayer (9) are then detached and a reflector (6) is produced on a principal surface of the semiconductor body.Type: GrantFiled: February 25, 2005Date of Patent: April 6, 2010Assignee: Osram GmbHInventors: Stefan Bader, Berthold Hahn, Volker Härle, Hans-Jürgen Lugauer, Manfred Mundbrod-Vangerow, Dominik Eisert
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Patent number: 7663155Abstract: A luminescent diode chip for flip-chip mounting on a carrier, having a conductive substrate (12), a semiconductor body (14) that contains a photon-emitting active zone and that is joined by an underside to the substrate (12), and a contact (18), disposed on a top side of the semiconductor body (14), for making an electrically conductive connection with the carrier (30) upon the flip-chip mounting of the chip, whereby either the carrier is solder covered or a layer of solder is applied to the contact. An insulating means (40, 42, 44, 46, 48) is provided on the chip, for electrically insulating free faces of the semiconductor body (14) and free surfaces of the substrate (12) from the solder.Type: GrantFiled: July 18, 2005Date of Patent: February 16, 2010Assignee: Osram Opto Semiconductors GmbHInventors: Volker Harle, Dominik Eisert
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Patent number: 7655488Abstract: Method for fabricating a semiconductor chip which emits electromagnetic radiation, wherein to improve the light yield of semiconductor chips which emit electromagnetic radiation, a textured reflection surface is integrated on the p-side of a semiconductor chip. The semiconductor chip has an epitaxially produced semiconductor layer stack based on GaN, which comprises an n-conducting semiconductor layer, a p-conducting semiconductor layer and an electromagnetic radiation generating region which is arranged between these two semiconductor layers. The surface of the p-conducting semiconductor layer which faces away from the radiation-generating region is provided with three-dimensional pyramid-like structures. A mirror layer is arranged over the whole of this textured surface. A textured reflection surface is formed between the mirror layer and the p-conducting semiconductor layer.Type: GrantFiled: October 27, 2008Date of Patent: February 2, 2010Assignee: Osram GmbHInventors: Stefan Bader, Dominik Eisert, Berthold Hahn, Stephan Kaiser
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Publication number: 20090261366Abstract: An optoelectronic component with a semiconductor body that comprises an active semiconductor layer sequence is disclosed, which is suitable for generating electromagnetic radiation of a first wavelength that is emitted from a front face of the semiconductor body. The component also comprises a first wavelength conversion substance following the semiconductor body in its direction of emission, which converts radiation of the first wavelength into radiation of a second wavelength different from the first wavelength, and a first selectively reflecting layer between the active semiconductor layer sequence and the first wavelength conversion substance that selectively reflects radiation of the second wavelength and is transparent to radiation of the first wavelength.Type: ApplicationFiled: September 27, 2006Publication date: October 22, 2009Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Dominik Eisert, Norbert Linder, Raimund Oberschmid, Dirk Berben, Frank Jermann, Martin Zachau
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Patent number: 7592636Abstract: A radiation-emitting semiconductor component having a radiation-transmissive substrate (1), on the underside of which a radiation-generating layer (2) is arranged, in which the substrate (1) has inclined side areas (3), in which the refractive index of the substrate (1) is greater than the refractive index of the radiation-generating layer, in which the difference in refractive index results in an unilluminated substrate region (4), into which no photons are coupled directly from the radiation-generating layer, and in which the substrate (1) has essentially perpendicular side areas (5) in the unilluminated region. The component has the advantage that it can be produced with a better area yield from a wafer.Type: GrantFiled: September 23, 2003Date of Patent: September 22, 2009Assignee: Osram Opto Semiconductors GmbHInventors: Johannes Baur, Dominik Eisert, Michael Fehrer, Berthold Hahn, Volker Harle
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Patent number: 7557381Abstract: A semiconductor component having a light-emitting semiconductor layer or a light-emitting semiconductor element, two contact locations and a vertically or horizontally patterned carrier substrate, and a method for producing a semiconductor component are disclosed for the purpose of reducing or compensating for the thermal stresses in the component. The thermal stresses arise as a result of temperature changes during processing and during operation and on account of the different expansion coefficients of the semiconductor and carrier substrate. The carrier substrate is patterned in such a way that the thermal stresses are reduced or compensated for sufficiently to ensure that the component does not fail.Type: GrantFiled: April 2, 2007Date of Patent: July 7, 2009Assignee: Osram Opto Semiconductor GmbHInventors: Dominik Eisert, Stefen Illek, Wolfgang Schmid
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Patent number: 7556974Abstract: An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.Type: GrantFiled: August 10, 2006Date of Patent: July 7, 2009Assignee: Osram Opto Semiconductors GmbHInventors: Volker Harle, Berthold Hahn, Hans-Jurgen Lugauer, Helmut Bolay, Stefan Bader, Dominik Eisert, Uwe Strauss, Johannes Volkl, Ulrich Zehnder, Alfred Lell, Andreas Weimar
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Publication number: 20090130787Abstract: Method for fabricating a semiconductor chip which emits electromagnetic radiation, wherein to improve the light yield of semiconductor chips which emit electromagnetic radiation, a textured reflection surface is integrated on the p-side of a semiconductor chip. The semiconductor chip has an epitaxially produced semiconductor layer stack based on GaN, which comprises an n-conducting semiconductor layer, a p-conducting semiconductor layer and an electromagnetic radiation generating region which is arranged between these two semiconductor layers. The surface of the p-conducting semiconductor layer which faces away from the radiation-generating region is provided with three-dimensional pyramid-like structures. A mirror layer is arranged over the whole of this textured surface. A textured reflection surface is formed between the mirror layer and the p-conducting semiconductor layer.Type: ApplicationFiled: October 27, 2008Publication date: May 21, 2009Inventors: Stefan Bader, Dominik Eisert, Berthold Hahn, Stephan Kaiser
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Patent number: 7442966Abstract: A semiconductor chip which emits electromagnetic radiation is presented. The chip includes an epitaxially produced semiconductor layer stack based on nitride semiconductor material, which includes an n-conducting semiconductor layer, a p-conducting semiconductor layer, and an electromagnetic radiation generating region, which is arranged between these two semiconductor layers. The chip further includes a base on which the semiconductor layer stack is arranged, and a mirror layer, which is arranged between the semiconductor layer stack and the base. The n-conducting semiconductor layer faces away from the base, and the n-conducting semiconductor layer or an outcoupling layer located on the n-conducting semiconductor layer has a radiation-outcoupling surface which, in turn, includes planar outcoupling sub-surfaces, which are positioned obliquely with respect to a main plane of the radiation-generating region and each form an angle of between 15° and 70° with this plane.Type: GrantFiled: October 24, 2006Date of Patent: October 28, 2008Assignee: Osram GmbHInventors: Stefan Bader, Dominik Eisert, Berthold Hahn, Stephan Kaiser
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Publication number: 20080179380Abstract: A radiation-emitting semiconductor component has an improved radiation efficiency. The semiconductor component has a multilayer structure with an active layer for generating radiation within the multilayer structure and also a window having a first and a second main surface. The multi-layer structure adjoins the first main surface of the window. At least one recess, such as a trench or a pit, is formed in the window from the second main surface for the purpose of increasing the radiation efficiency. The recess preferably has a trapezoidal cross section tapering toward the first main surface and can be produced for example by sawing into the window.Type: ApplicationFiled: December 7, 2006Publication date: July 31, 2008Inventors: Johannes Baur, Dominik Eisert, Michael Fehrer, Berthold Hahn, Volker Harle, Marianne Ortmann, Uwe Strauss, Johannes Volkl, Ulrich Zehnder
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Publication number: 20070181891Abstract: A semiconductor component having a light-emitting semiconductor layer or a light-emitting semiconductor element, two contact locations and a vertically or horizontally patterned carrier substrate, and a method for producing a semiconductor component are disclosed for the purpose of reducing or compensating for the thermal stresses in the component. The thermal stresses arise as a result of temperature changes during processing and during operation and on account of the different expansion coefficients of the semiconductor and carrier substrate. The carrier substrate is patterned in such a way that the thermal stresses are reduced or compensated for sufficiently to ensure that the component does not fail.Type: ApplicationFiled: April 2, 2007Publication date: August 9, 2007Inventors: Dominik Eisert, Stefan Illek, Wolfgang Schmid
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Patent number: 7242025Abstract: A radiation-emitting semiconductor component has a semiconductor body containing a nitride compound semiconductor, and a contact metallization layer disposed on a surface of the semiconductor body. In this case, the contact metallization layer is covered with a radiation-transmissive, electrically conductive contact layer. The radiation generated is coupled out through the contact metallization layer or through openings in the contact metallization layer.Type: GrantFiled: January 31, 2003Date of Patent: July 10, 2007Assignee: Osram Opto Semiconductors GmbHInventors: Dominik Eisert, Stephan Kaiser, Michael Fehrer, Berthold Hahn, Volker Härle
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Publication number: 20070145402Abstract: This invention describes a radiation-emitting semiconductor component with the a multilayered structure that contains a radiation-emitting active layer, and a window transparent to radiation that has a first principal face and a second principal face opposite the first principal face, and whose first principal face adjoins the multilayered structure. At least one recess is made in the window, which preferably has the form of an indentation of the second principal face or as an edge excavation. At least one lateral surface of the window or of the recess is provided at least partially with a contact surface. Alternatively or cumulatively, at least one contact surface of the component has a plurality of openings.Type: ApplicationFiled: March 9, 2007Publication date: June 28, 2007Inventors: Dominik Eisert, Volker Harle, Frank Kuhn, Manfred Mundbrod-Vangerow, Uwe Strauss, Jacob Ulrich, Ernst Nirschl, Norbert Linder, Reinhard Sedlmeier, Ulrich Zehnder, Johannes Baur
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Patent number: 7208337Abstract: A semiconductor component having a light-emitting semiconductor layer or a light-emitting semiconductor element, two contact locations and a vertically or horizontally patterned carrier substrate, and a method for producing a semiconductor component are disclosed for the purpose of reducing or compensating for the thermal stresses in the component. The thermal stresses arise as a result of temperature changes during processing and during operation and on account of the different expansion coefficients of the semiconductor and carrier substrate. The carrier substrate is patterned in such a way that the thermal stresses are reduced or compensated for sufficiently to ensure that the component does not fail.Type: GrantFiled: September 5, 2003Date of Patent: April 24, 2007Assignee: Osram Opto Semiconductors GmbHInventors: Dominik Eisert, Stefan Illek, Wolfgang Schmid
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Patent number: 7205578Abstract: This invention describes a radiation-emitting semiconductor component with the a multilayered structure (4) that contains a radiation-emitting active layer (5), and a window (1) transparent to radiation that has a first principal face (2) and a second principal face (3) opposite the first principal face (2), and whose first principal face (2) adjoins the multilayered structure (4). At least one recess (8) is made in the window (1), which preferably has the form of an indentation of the second principal face or as an edge excavation. At least one lateral surface of the window (1) or of the recess (8) is provided at least partially with a contact surface (11). Alternatively or cumulatively, at least one contact surface of the component has a plurality of openings (14).Type: GrantFiled: February 15, 2001Date of Patent: April 17, 2007Assignee: Osram GmbHInventors: Dominik Eisert, Volker Härle, Frank Kühn, Manfred Mundbrod-Vangerow, Uwe Strauss, Jacob Ulrich, Ernst Nirschl, Norbert Linder, Reinhard Sedlmeier, Ulrich Zehnder, Johannes Baur
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Patent number: 7196359Abstract: A radiation-emitting chip (2) with a radiation-transmissive window (5), which has a refractive index nF and has a main area (19), with a multilayer structure (9), which contains a radiation-active layer (10) and adjoins the main area (19) of the window (5), and with a radiation-transmissive medium surrounding the window (5) and having the refractive index n0, the window (5) having at least two boundary areas (6, 7), which form an angle ?, for which the relationship 90°??t<?<2?t where ?t=arc sin(n0/nF) is satisfied. A radiation-emitting component contains a chip (2) of this type.Type: GrantFiled: June 5, 2002Date of Patent: March 27, 2007Assignee: Osram Opto Semiconductors GmbHInventors: Johannes Baur, Dominik Eisert, Volker Harle
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Patent number: 7195942Abstract: Radiation-emitting semiconductor device, method for fabricating same and radiation-emitting optical device. A radiation-emitting semiconductor device with a multilayer structure (100) comprising a radiation-emitting active layer (10), with electrical contacts (30, 40) for impressing a current in the multilayer structure (100) and with a radiotransparent window layer (20). The window layer is arranged exclusively on the side of the multilayer structure (100) facing away from a main direction of radiation of the semiconductor device and has at least one side wall that includes a first side wall portion (20a) which extends obliquely, concavely or in a stepwise manner toward a central axis of the semiconductor device lying perpendicular to the multilayer sequence.Type: GrantFiled: May 3, 2004Date of Patent: March 27, 2007Assignee: Osram GmbHInventors: Dominik Eisert, Volker Haerle, Frank Kuehn, Manfred Mundbrod-Vangerow, Uwe Strauss, Ulrich Zehnder
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Publication number: 20070034888Abstract: A semiconductor chip which emits electromagnetic radiation is presented. The chip includes an epitaxially produced semiconductor layer stack based on nitride semiconductor material, which includes an n-conducting semiconductor layer, a p-conducting semiconductor layer, and an electromagnetic radiation generating region, which is arranged between these two semiconductor layers. The chip further includes a base on which the semiconductor layer stack is arranged, and a mirror layer, which is arranged between the semiconductor layer stack and the base. The n-conducting semiconductor layer faces away from the base, and the n-conducting semiconductor layer or an outcoupling layer located on the n-conducting semiconductor layer has a radiation-outcoupling surface which, in turn, includes planar outcoupling sub-surfaces, which are positioned obliquely with respect to a main plane of the radiation-generating region and each form an angle of between 15° and 70° with this plane.Type: ApplicationFiled: October 24, 2006Publication date: February 15, 2007Inventors: Stefan Bader, Dominik Eisert, Berthold Hahn, Stephan Kaiser
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Patent number: 7169632Abstract: A radiation-emitting semiconductor component has an improved radiation efficiency. The semiconductor component has a multilayer structure with an active layer for generating radiation within the multilayer structure and also a window having a first and a second main surface. The multi-layer structure adjoins the first main surface of the window. At least one recess, such as a trench or a pit, is formed in the window from the second main surface for the purpose of increasing the radiation efficiency. The recess preferably has a trapezoidal cross section tapering toward the first main surface and can be produced for example by sawing into the window.Type: GrantFiled: September 9, 2003Date of Patent: January 30, 2007Assignee: Osram GmbHInventors: Johannes Baur, Dominik Eisert, Michael Fehrer, Berthold Hahn, Volker Härle, Marianne Ortmann, Uwe Strauss, Johannes Völkl, Ulrich Zehnder