Abstract: An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.

Abstract: Semiconductor chip which emits electromagnetic radiation, and method for fabricating it. To improve the light yield of semiconductor chips which emit electromagnetic radiation, a textured reflection surface (131) is integrated on the p-side of a semiconductor chip. The semiconductor chip has an epitaxially produced semiconductor layer stack (1) based on GaN, which comprises an n-conducting semiconductor layer (11), a p-conducting semiconductor layer (13) and an electromagnetic radiation generating region (12) which is arranged between these two semiconductor layers (11, 13). The surface of the p-conducting semiconductor layer (13) which faces away from the radiation-generating region (12) is provided with three-dimensional pyramid-like structures (15). A mirror layer (40) is arranged over the whole of this textured surface. A textured reflection surface (131) is formed between the mirror layer (40) and the p-conducting semiconductor layer (13).

Abstract: A radiation-emitting semiconductor component with a layer structure (12) which includes a photon-emitting active layer (16), an n-doped cladding layer (14) and a p-doped cladding layer (18), a contact connected to the n-doped cladding layer (14) and a mirror layer (20) connected to the p-doped cladding layer (18). The mirror layer (20) is formed by an alloy of silver comprising one or more metals selected from the group consisting of Ru, Rh, Pd, Au, Os, Ir, Pt, Cu, Ti, Ta and Cr.

Abstract: An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.

Abstract: A radiation-emitting semiconductor component having a radiation-transmissive substrate (1), on the underside of which a radiation-generating layer (2) is arranged, in which the substrate (1) has inclined side areas (3), in which the refractive index of the substrate (1) is greater than the refractive index of the radiation-generating layer, in which the difference in refractive index results in an unilluminated substrate region (4), into which no photons are coupled directly from the radiation-generating layer, and in which the substrate (1) has essentially perpendicular side areas (5) in the unilluminated region. The component has the advantage that it can be produced with a better area yield from a wafer.

Abstract: A radiation-emitting thin-film semiconductor component with a multilayer structure (12) based on GaN, which contains an active, radiation-generating layer (14) and has a first main area (16) and a second main area (18)—remote from the first main area—for coupling out the radiation generated in the active, radiation-generating layer. Furthermore, the first main area (16) of the multilayer structure (12) is coupled to a reflective layer or interface, and the region (22) of the multilayer structure that adjoins the second main area (18) of the multilayer structure is patterned one- or two-dimensionally.

Abstract: A radiation-emitting semiconductor component with a layer structure (12) which includes a photon-emitting active layer (16), an n-doped cladding layer (14) and a p-doped cladding layer (18), a contact connected to the n-doped cladding layer (14) and a mirror layer (20) connected to the p-doped cladding layer (18). The mirror layer (20) is formed by an alloy of silver comprising one or more metals selected from the group consisting of Ru, Rh, Pd, Au, Os, Ir, Pt, Cu, Ti, Ta and Cr.

Abstract: A semiconductor component having a light-emitting semiconductor layer or a light-emitting semiconductor element, two contact locations and a vertically or horizontally patterned carrier substrate, and a method for producing a semiconductor component are disclosed for the purpose of reducing or compensating for the thermal stresses in the component. The thermal stresses arise as a result of temperature changes during processing and during operation and on account of the different expansion coefficients of the semiconductor and carrier substrate. The carrier substrate is patterned in such a way that the thermal stresses are reduced or compensated for sufficiently to ensure that the component does not fail.

Abstract: A light-emitting diode (1) has a lens body (3) that is fabricated from an inorganic solid. Fastened on the lens body (3) are semiconductor chips (2) that emit light beams (18). Furthermore, the light-emitting diode (1) is provided with a housing (20) that can be screwed into a conventional lamp holder via a thread (21).

Abstract: This invention describes a radiation-emitting semiconductor component based on GaN, whose semiconductor body is made up of a stack of different GaN semiconductor layers (1). The semiconductor body has a first principal surface (3) and a second principal surface (4), with the radiation produced being emitted through the first principal surface (3) and with a reflector (6) being produced on the second principal surface (4). The invention also describes a production method for a semiconductor component pursuant to the invention. An interlayer (9) is first applied to a substrate (8), and a plurality of GaN layers (1) that constitute the semiconductor body of the component are then applied to this. The substrate (8) and the interlayer (9) are then detached and a reflector (6) is produced on a principal surface of the semiconductor body.

Abstract: An electromagnetic radiation generating semiconductor chip is disclosed. A semiconductor layer sequence suitable for generating electromagnetic radiation is grown on a first main face of a radioparent, electrically conductive growth substrate, for example, a SiC growth substrate. Provided on a second main face of said growth substrate that faces away from said semiconductor layer sequence is a roughening that acts as a diffuser for an electromagnetic radiation emitted into said growth substrate by said semiconductor layer sequence and that in particular has a scattering factor higher than 0.25. A layer or layer sequence reflective of the electromagnetic radiation is applied to said roughening. A method for making the semiconductor chip is also disclosed.

Abstract: This invention describes a radiation-emitting semiconductor component based on GaN, whose semiconductor body is made up of a stack of different GaN semiconductor layers (1). The semiconductor body has a first principal surface (3) and a second principal surface (4), with the radiation produced being emitted through the first principal surface (3) and with a reflector (6) being produced on the second principal surface (4). The invention also describes a production method for a semiconductor component pursuant to the invention. An interlayer (9) is first applied to a substrate (8), and a plurality of GaN layers (1) that constitute the semiconductor body of the component are then applied to this. The substrate (8) and the interlayer (9) are then detached and a reflector (6) is produced on a principal surface of the semiconductor body.

Abstract: A semiconductor chip has a substrate that is in the form of a parallelepiped whose side surfaces are shaped as tilted parallelograms. Such a semiconductor chip has a high output efficiency and a homogeneous thermal load due to having at least two side surfaces that are provided with an acute angle and are in the form of parallelograms.

Abstract: A luminescent diode chip for flip-chip mounting on a carrier, having a conductive substrate (12), a semiconductor body (14) that contains a photon-emitting active zone and that is joined by an underside to the substrate (12), and a contact (18), disposed on a top side of the semiconductor body (14), for making an electrically conductive connection with the carrier (30) upon the flip-chip mounting of the chip, whereby either the carrier is solder covered or a layer of solder is applied to the contact. An insulating means (40, 42, 44, 46, 48) is provided on the chip, for electrically insulating free faces of the semiconductor body (14) and free surfaces of the substrate (12) from the solder.

Abstract: Recesses interrupt an active layer on a semiconductor chip to improve the coupling out of light. As a result, side faces of the active layer appear, as seen from a light-generating point, at a large solid angle and the paths of light in the active layer are shortened.

Abstract: A luminescent diode chip for flip-chip mounting on a carrier, having a conductive substrate (12), a semiconductor body (14) that contains a photon-emitting active zone and that is joined by an underside to the substrate (12), and a contact (18), disposed on a top side of the semiconductor body (14), for making an electrically conductive connection with the carrier (30) upon the flip-chip mounting of the chip, whereby either the carrier is solder covered or a layer of solder is applied to the contact. An insulating means (40, 42, 44, 46, 48) is provided on the chip, for electrically insulating free faces of the semiconductor body (14) and free surfaces of the substrate (12) from the solder.

Abstract: An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.

Abstract: A light-emitting chip (3) has a lens-type coupling-out window (4), whose base area (5) is provided with a mirror area (6). Arranged on a coupling-out area (7) of the coupling-out window (4) is a layer sequence (9), with a photon-emitting pn junction (10). The photons emitted by the pn junction are reflected at the mirror area (6) and can leave the coupling-out window (4) through the coupling-out area (7).

Abstract: Proposed for high-performance light-emitting diodes are semiconductor chips (1) whose longitudinal sides are substantially longer than their transverse sides. Light extraction can be substantially improved in this manner.

Abstract: This invention describes a radiation-emitting semiconductor component based on GaN, whose semiconductor body is made up of a stack of different GaN semiconductor layers (1). The semiconductor body has a first principal surface (3) and a second principal surface (4), with the radiation produced being emitted through the first principal surface (3) and with a reflector (6) being produced on the second principal surface (4). The invention also describes a production method for a semiconductor component pursuant to the invention. An interlayer (9) is first applied to a substrate (8), and a plurality of GaN layers (1) that constitute the semiconductor body of the component are then applied to this. The substrate (8) and the interlayer (9) are then detached and a reflector (6) is produced on a principal surface of the semiconductor body.