Abstract: An apparatus for preventing backflow. The apparatus includes a housing; a trap flow part forming a flow passage for a medical fluid, a discharge part provided on an lower portion of the housing and to receive the medical fluid from the trap flow part and to discharge the medical fluid; a backflow prevention chamber part provided between the trap flow part and the discharge part; and a plate-shaped backflow prevention member provided on one surface of the inner side of the backflow prevention chamber part connected to the trap flow part and in close contact with a periphery of the outlet opening, the plate-shaped backflow prevention member being provided to open or close the opening depending on forward flow and the backflow of the medical fluid.

Abstract: A light emitting diode device comprising: a plurality of nanowires or nanopyramids grown on a graphitic substrate, said nanowires or nanopyramids having a p-n or p-i-n junction, a first electrode in electrical contact with said graphitic substrate; a light reflective layer in contact with the top of at least a portion of said nanowires or nanopyramids, said light reflective layer optionally acting as a second electrode; optionally a second electrode in electrical contact with the top of at least a portion of said nanowires or nanopyramids, said second electrode being essential where said light reflective layer does not act as an electrode; wherein said nanowires or nanopyramids comprise at least one group III-V compound semiconductor; and wherein in use light is emitted from said device in a direction substantially opposite to said light reflective layer.

Abstract: A process for growing nanowires or nanopyramids comprising: (I) providing a graphitic substrate and depositing AlGaN, InGaN, AlN or AlGa(In)N on said graphitic substrate at an elevated temperature to form a buffer layer or nanoscale nucleation islands of said compounds; (II) growing a plurality of semiconducting group III-V nanowires or nanopyramids, preferably III-nitride nanowires or nanopyramids, on the said buffer layer or nucleation islands on the graphitic substrate, preferably via MOVPE or MBE.

Abstract: Disclosed is a headwear hanger including a headwear-shaped deformation prevention structure including a base frame that is formed in a size corresponding to an outer circumferential surface of a headwear and has a circular structure in a plan view, a plurality of support frames that are mounted on one side of the base frame and have a semi-circular structure having an outer diameter that is the same as an inner diameter of the headwear, an upper binding part that is mounted on one side of the base frame and is hung on another structure, and a lower binding part that has a structure mounted on the other side of the base frame and bound to the upper binding part of another headwear hanger.

Abstract: A composition of matter comprising: a graphitic substrate optionally carried on a support, a seed layer having a thickness of no more than 50 nm deposited directly on top of said substrate, opposite any support; and an oxide or nitride masking layer e directly on top of said seed layer; wherein a plurality of holes are present through said seed layer and through said masking layer to C said graphitic substrate; and wherein a plurality of nanowires or nanopyramids are grown from said substrate in said holes, said nanowres or nanopyramids comprising at least one semiconducting group III-V compound.

Abstract: A composition of matter, in particular a photovoltaic cell, comprising: at least one core semiconductor nanowire on a graphitic substrate, said at least one core nanowire having been grown epitaxially on said substrate wherein said nanowire comprises at least one group III-V compound or at least one group II-VI compound or at least one group IV element; a semiconductor shell surrounding said core nanowire, said shell comprising at least one group III-V compound or at least one group II-VI compound or at least one group IV element such that said core nanowire and said shell form a n-type semiconductor and a p-type semiconductor respectively or vice versa; and an outer conducting coating surrounding said shell which forms an electrode contact.

Abstract: An apparatus for preventing backflow includes a body forming an accommodating portion which forms a transport passage of a fluid inward, wherein the accommodating portion comprises a double backflow prevention chamber to prevent backflow of the fluid, and a double backflow prevention member provided in the accommodating portion and stepwise implementing opening and closing of the double backflow prevention chamber, In particular, the accommodating portion includes an inflow chamber provided at an upper portion of the body and into which the fluid flows; a discharge chamber through which the fluid is discharged to a lower portion of the inflow chamber; and the double backflow prevention chambers respectively provided at the lower portion of the inflow chamber and the upper portion of the discharge chamber.

Abstract: An apparatus for preventing backflow. The apparatus includes a housing; a trap flow part forming a flow passage for a medical fluid, a discharge part provided on an lower portion of the housing and to receive the medical fluid from the trap flow part and to discharge the medical fluid; a backflow prevention chamber part provided between the trap flow part and the discharge part; and a plate-shaped backflow prevention member provided on one surface of the inner side of the backflow prevention chamber part connected to the trap flow part and in close contact with a periphery of the outlet opening, the plate-shaped backflow prevention member being provided to open or close the opening depending on forward flow and the backflow of the medical fluid.

Abstract: An apparatus for preventing backflow includes a body forming an accommodating portion which forms a transport passage of a fluid inward, wherein the accommodating portion comprises a double backflow prevention chamber to prevent backflow of the fluid, and a double backflow prevention member provided in the accommodating portion and stepwise implementing opening and closing of the double backflow prevention chamber, In particular, the accommodating portion includes an inflow chamber provided at an upper portion of the body and into which the fluid flows; a discharge chamber through which the fluid is discharged to a lower portion of the inflow chamber; and the double backflow prevention chambers respectively provided at the lower portion of the inflow chamber and the upper portion of the discharge chamber.

Abstract: A composition of matter comprising at least one nanowire on a graphitic substrate, said at least one nanowire having been grown epitaxially on said substrate, wherein said nanowire comprises at least one group III-V compound or at least one group II-VI compound or comprises at least one non carbon group (IV) element.

Abstract: A process for growing nanowires or nanopyramids comprising: (I) providing a graphitic substrate and depositing AlGaN, InGaN, AlN or AlGa(In)N on said graphitic substrate at an elevated temperature to form a buffer layer or nanoscale nucleation islands of said compounds; (II) growing a plurality of semiconducting group III-V nanowires or nanopyramids, preferably III-nitride nanowires or nanopyramids, on the said buffer layer or nucleation islands on the graphitic substrate, preferably via MOVPE or MBE.

Abstract: A drone according to the present invention comprises one or more reverse thrust propeller units for generating reverse thrust and, when an operation such as the horizontal delivery of an object is performed, quickly offsets the movement of the center of gravity by using the force of reverse thrust such that the force applied to each propeller can be balanced. Propeller supports having the reverse thrust propeller units mounted thereon can be formed such that the lengths thereof can be extended and reduced. Since rotational force applied to each propeller motor can be equally distributed, stable flight can be promoted, and the risk of crash produced according to the application of excessive force can be reduced. Therefore, the present invention is applied to various fields in which the center of gravity changes because of load applied to one side, and thus stable operation of the drone can be promoted.

Abstract: A composition of matter comprising: a graphitic substrate optionally carried on a support, a seed layer having a thickness of no more than 50 nm deposited directly on top of said substrate, opposite any support; and an oxide or nitride masking layer e directly on top of said seed layer; wherein a plurality of holes are present through said seed layer and through said masking layer to C said graphitic substrate; and wherein a plurality of nanowires or nanopyramids are grown from said substrate in said holes, said nanowres or nanopyramids comprising at least one semiconducting group III-V compound.

Abstract: A composition of matter, in particular a photovoltaic cell, comprising: at least one core semiconductor nanowire on a graphitic substrate, said at least one core nanowire having been grown epitaxially on said substrate wherein said nanowire comprises at least one group III-V compound or at least one group II-VI compound or at least one group IV element; a semiconductor shell surrounding said core nanowire, said shell comprising at least one group III-V compound or at least one group II-VI compound or at least one group IV element such that said core nanowire and said shell form a n-type semiconductor and a p-type semiconductor respectively or vice versa; and an outer conducting coating surrounding said shell which forms an electrode contact.

Abstract: A process for growing nanowires or nanopyramids comprising: (I) providing a graphitic substrate and depositing AlGaN, InGaN, AlN or AlGa(In)N on said graphitic substrate at an elevated temperature to form a buffer layer or nanoscale nucleation islands of said compounds; (II) growing a plurality of semiconducting group III-V nanowires or nanopyramids, preferably III-nitride nanowires or nanopyramids, on the said buffer layer or nucleation islands on the graphitic substrate, preferably via MOVPE or MBE.

Abstract: A semiconductor package includes an integrated circuit mounted on a substrate, a first power line disposed on or above the substrate and configured to transmit an operating voltage to the integrated circuit, and a second power line disposed on or above the substrate and configured to transmit a ground voltage to the integrated circuit, in which each of the first power line and the second power line has a first width, the first power line is spaced apart from the second power line by a first distance, thicknesses of each of the first power line and the second power line are less than or equal to 20 ?m, and a ratio of the first width to the first distance is greater than 2.5.

Abstract: In a method of cleaning a substrate, a protecting liquid may be sprayed to a surface of the substrate from a first position in a first spray direction. Cleaning droplets may be injected on to the surface of the substrate. The protecting liquid may be sprayed to the surface of the substrate from a second position different from the first position in a second spray direction. For example, the protecting liquid may be always sprayed from the central portion toward the edge portions in the substrate so that the protecting liquid on the substrate may have a uniform thickness.

Abstract: A composition of matter, in particular a photovoltaic cell, comprising: at least one core semiconductor nanowire on a graphitic substrate, said at least one core nanowire having been grown epitaxially on said substrate wherein said nanowire comprises at least one group III-V compound or at least one group II-VI compound or at least one group IV element; a semiconductor shell surrounding said core nanowire, said shell comprising at least one group III-V compound or at least one group II-VI compound or at least one group IV element such that said core nanowire and said shell form a n-type semiconductor and a p-type semiconductor respectively or vice versa; and an outer conducting coating surrounding said shell which forms an electrode contact.

Abstract: A composition of matter comprising: a graphitic substrate optionally carried on a support; a seed layer having a thickness of no more than 50 nm deposited directly on top of said substrate, opposite any support; and an oxide or nitride masking layer directly on top of said seed layer; wherein a plurality of holes are present through said seed layer and through said masking layer to said graphitic substrate; and wherein a plurality of nanowires or nanopyramids are grown from said substrate in said holes, said nanowires or nanopyramids comprising at least one semiconducting group III-V compound.

Abstract: Provided are a method of relaying, by a payment gateway server, a payment using a representative card connected to a plurality of general cards, the method comprising steps of: (a) acquiring card information of a card set as a payment card among the plurality of general cards connected to the representative card when a payment approval is requested using the representative card; and (b) requesting the payment approval to a card company server using the acquired card information of the payment card and processing such that the payment approval made using the payment card is completed.