Abstract: A light emitting element may include a first semiconductor layer, an emission layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the emission layer, an insulating film, and an electrode layer. The insulating film may enclose a side surface of the first semiconductor layer, a side surface of the emission layer, and a side surface of the second semiconductor layer. The electrode layer may be disposed on the second semiconductor layer and the insulating film. The insulating film may not enclose the electrode layer.

Abstract: A light emitting element includes a first semiconductor layer, a light emitting layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the light emitting layer, an electrode layer disposed on the second semiconductor layer, and an insulative film. The insulative film surrounds side surfaces of the first semiconductor layer, the light emitting layer, and the second semiconductor layer, and surrounds a portion of the electrode layer at a first end portion at which the electrode layer is disposed. The electrode layer includes a first surface adjacent to the second semiconductor layer, and a second surface facing the first surface, the second surface having a width greater than a width of the first surface.

Abstract: A light emitting element includes: a light emitting element core including a first semiconductor layer, a light emitting layer on the first semiconductor layer, and a second semiconductor layer on the light emitting layer; and a first element insulating layer surrounding a side surface of the light emitting element core. An outer surface of the first element insulating layer has a first outer surface adjacent to one surface of the first semiconductor layer, the one surface of the first semiconductor layer being opposite to another surface of the first semiconductor layer facing the second semiconductor layer, and a second outer surface farther away from a side surface of the first semiconductor layer than the first outer surface is.

Abstract: A includes a substrate including a plurality of pixels, a plurality of transistors disposed on the substrate, a passivation layer overlapping the plurality of transistors, a first electrode and a second electrode disposed on the passivation layer and spaced apart from each other, an insulating layer disposed on the first electrode and the second electrode, a plurality of light emitting elements disposed between the first electrode and the second electrode on the insulating layer and electrically connected to the first electrode and the second electrode, and an insulating reflective layer disposed between the passivation layer and the plurality of light emitting elements.

Abstract: A display device includes a substrate; a first electrode and a second electrode arranged to be spaced apart from each other on the substrate; a first insulating layer on the substrate; a light emitting element on the first insulating layer, located between the first electrode and the second electrode, and including a first end portion and a second end portion; a third electrode on the substrate and electrically connected to the first electrode and the first end portion; a fourth electrode on the substrate and electrically connected to the second electrode and the second end portion; a second insulating layer on the substrate and covering the light emitting element, the third electrode, and the fourth electrode; and a light diffusion layer on the second insulating layer and including a light diffusion particle.

Abstract: A light emitting element includes a light emitting element core extending in a direction and including first and second semiconductor layers and an element active layer disposed between the first and second semiconductor layers. The light emitting element includes an element electrode layer on the second semiconductor layer of the light emitting element core, and an element insulating film surrounding a side surface of the light emitting element core and a side surface of the element electrode layer. The element electrode layer overlaps the second semiconductor layer in the direction the light emitting element core extends, an area of the element electrode layer in plan view is smaller than an area of the second semiconductor layer in plan view, and the element insulating film completely exposes a surface of the element electrode layer, the surface being opposite to another surface of the element electrode layer facing the second semiconductor layer.

Abstract: A light emitting element includes a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an element active layer between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer, the element active layer, and the second semiconductor layer are sequentially located along a first direction. A thickness of the first semiconductor layer in the first direction is greater than a thickness of the second semiconductor layer in the first direction. A cross section of the element active layer taken along the first direction includes a first side facing the first semiconductor layer, a second side facing the second semiconductor layer, a first lateral side connecting one end of the first side to one end of the second side, and a second lateral side connecting an other end of the first side to an other end of the second side.

Abstract: A light emitting element includes a first semiconductor layer; an emission layer disposed on the first semiconductor layer; a second semiconductor layer disposed on the emission layer; an electrode layer disposed on the second semiconductor layer; and an insulating film surrounding side surfaces of the first semiconductor layer, the emission layer, and the second semiconductor layer and surrounding a portion of the electrode layer at an end portion of the light emitting element on which the electrode layer is disposed. The electrode layer includes a first surface adjacent to the second semiconductor layer; a second surface facing the first surface and having a width less than a width of the first surface; and a side surface that connects the first surface and the second surface and has a slope in a range of about 75° to about 90° with respect to the first surface of the electrode layer.

Abstract: A display device includes a first electrode, a second electrode disposed spaced apart from the first electrode in a first direction, and an element part disposed between the first electrode and the second electrode. The element part includes light-emitting elements that have a shape extending in one direction and are arranged spaced apart from each other in a second direction perpendicular to the first direction; and a binder surrounding each of the light-emitting elements and fixing the light-emitting elements. The one direction in which the light-emitting elements extend is parallel to the first direction.

Abstract: A light-emitting element including: a first semiconductor layer doped with a first type of dopant; a second semiconductor layer doped with a second type of dopant that is different from the first type of dopant; and an active layer between the first semiconductor layer and the second semiconductor layer, wherein a length of the light-emitting element measured in a first direction, which may be a direction in which the first semiconductor layer, the active layer, and the second semiconductor layer may be arranged, may be shorter than the width measured in a second direction that is perpendicular to the first direction.

Abstract: A method for manufacturing a light emitting element includes forming a first semiconductor structure including a first semiconductor layer doped with a first conductivity type dopant disposed on a base substrate, a light emitting layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the light emitting layer and doped with a second conductivity type dopant; forming a second semiconductor structure spaced apart from another second semiconductor structure on the base substrate by etching the first semiconductor structure in a direction perpendicular to a surface of the base substrate; and activating a second conductivity type dopant in the second semiconductor layer of the second semiconductor structure to form a light emitting element core.

Abstract: A light emitting element includes: a first semiconductor layer doped with a first polarity; a second semiconductor layer doped with a second polarity different from the first polarity; an active layer between the first semiconductor layer and the second semiconductor layer in a first direction; and an insulating film surrounding an outer surface of at least the active layer and extending in the first direction. A thickness of a first portion of the insulating film surrounding the active layer is in a range of 10% to 16% of a diameter of the active layer.

Abstract: A light emitting element includes: a first semiconductor layer doped with a first polarity; a second semiconductor layer doped with a second polarity different from the first polarity; an active layer between the first semiconductor layer and the second semiconductor layer in a first direction; a first outer film around an outer surface of at least the active layer and extending in the first direction; and a second outer film around an outer surface of a portion of the first semiconductor layer on which the first outer film is not present.

Abstract: A display device may include a light emitting element including a first end having a first surface, and a second end having a second surface parallel to the first surface, an organic pattern that overlaps the light emitting element and exposes the first and second surfaces, a first electrode disposed on a substrate and electrically contacting the first end, and a second electrode disposed on the substrate and spaced apart from the first electrode, and electrically contacting the second end. A surface area of the first surface may be less than that of the second surface. A top surface of the organic pattern may be a curved surface.

Abstract: A light-emitting element includes a light-emitting element core extending in a direction and including a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and a device active layer disposed between the first semiconductor layer and the second semiconductor layer, a device insulating film surrounding a lateral surface of the light-emitting element core, and a reflective film disposed on an outer lateral surface of the device insulating film and surrounding at least a lateral surface of the device active layer.

Abstract: A display device includes a first subpixel and a second subpixel, wherein the first subpixel includes a first light source unit including a plurality of first light-emitting elements configured to emit first light having a center wavelength of a first wavelength, the second subpixel includes a second light source unit including a plurality of second light-emitting elements configured to emit second light having a center wavelength of a second wavelength, the first light source unit includes first to nth light-emitting groups that are connected in series, each of the groups including the plurality of first light-emitting elements, the second light source unit includes first to mth light-emitting groups that are connected in series and each of the groups includes the plurality of second light-emitting elements, where n and m are natural numbers, and the second wavelength is different from the first wavelength.

Abstract: A method of manufacturing a light-emitting element comprises providing a semiconductor structure on a substrate, the semiconductor structure emitting light having different wavelength bands from each other, measuring the light having the different wavelength bands from each other and defining wavelength regions, forming nanopatterns spaced apart from each other on the semiconductor structure, the nanopatterns having different diameters from each other, and etching the semiconductor structure to form element rods.

Abstract: An apparatus includes a base including a receiving portion that receives a substrate on which semiconductor elements are disposed; and at least one ultrasonic generator that generates and applies ultrasonic waves to the substrate placed in the base.

Abstract: A light-emitting element, a method of fabricating a light-emitting element, and a display device comprising a light-emitting element are provided. The light-emitting element comprises a first semiconductor layer doped with an n-type dopant, a second semiconductor layer doped with a p-type dopant, a light-emitting layer disposed between the first semiconductor layer and second semiconductor layer, an electrode layer disposed on the second semiconductor layer, an insulating structure disposed on the electrode layer and having a maximum diameter smaller than a diameter of the electrode layer and an insulating film that surrounds side surfaces of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer.

Abstract: A display device includes a substrate; a first electrode and a second electrode arranged to be spaced apart from each other on the substrate; a first insulating layer on the substrate; a light emitting element on the first insulating layer, located between the first electrode and the second electrode, and including a first end portion and a second end portion; a third electrode on the substrate and electrically connected to the first electrode and the first end portion; a fourth electrode on the substrate and electrically connected to the second electrode and the second end portion; a second insulating layer on the substrate and covering the light emitting element, the third electrode, and the fourth electrode; and a light diffusion layer on the second insulating layer and including a light diffusion particle.