Abstract: This invention relates to indolizine derivatives and their use in medicine. In particular, the present invention discloses novel substituted indolizine derivatives of formula I, or an isotopically labeled compound thereof, or an optical isomer thereof, a geometric isomer thereof, a tautomer thereof or a mixture of various isomers, or a pharmaceutically acceptable salt thereof, or a prodrug thereof. The invention also relates to the use of these compounds in medicine.

Abstract: The present disclosure provides systems and methods for image filtering. The method may include obtaining an initial image block from a reconstructed image; determining at least one candidate image block by performing a filtering operation on the initial image block using at least one trained machine learning model; and determining a target image block based on the at least one candidate image block.

Abstract: The disclosure provides techniques for facilitating video creations. The techniques comprise turning on a first camera on a first side of a terminal; turning on a second camera on a second side of the terminal; capturing, by the first camera, a first video; capturing, by the second camera, a second video; displaying the first video and the second video concurrently, wherein the displaying further comprises displaying the first video in a first area and the second video in a second area during a first time period, and in response to a first instruction to switch video content, displaying the second video in the first area and the first video in the second area during a second time period; and creating a timeline including the first time period, the second time period, and a time stamp of the video content switch in the first area.

Abstract: An L2 virtual machine (VM) operating in a trust domain invokes a memory operation involving a virtual I/O device passed through from an L1 VM. Invocation of the memory operation causes an L2 virtual I/O device driver to make a hypercall to a trust domain management module. The hypercall comprises a memory-mapped I/O (MMIO) address of the virtual I/O device as seen by the L2 VM (L2 MMIO address), which matches the MMIO address of the virtual I/O device as seen by the L1 VM. The module passes hypercall information to an LO hypervisor, which forwards the information to an emulator operating in LO user space that emulates the back end of the virtual I/O device operating on the L1 VM. The emulator determines an emulated software response based on the L2 MMIO address and the memory operation is carried out.

Abstract: This invention relates to indolizine derivatives and their use in medicine. In particular, the present invention discloses novel substituted indolizine derivatives of formula I, or an isotopically labeled compound thereof, or an optical isomer thereof, a geometric isomer thereof, a tautomer thereof or a mixture of various isomers, or a pharmaceutically acceptable salt thereof, or a prodrug thereof. The invention also relates to the use of these compounds in medicine.

Abstract: A spray rod and an intelligent toilet are provided. The spray rod comprises: a body, a body water passage being formed in the body; a nozzle assembly, arranged separately from the body, the nozzle assembly having a nozzle communicated with the body water passage; a vibration motor, provided in the nozzle assembly, so that the vibration motor drives the nozzle assembly to vibrate when the vibration motor operates, and washing water sprayed from the nozzle at least swings in the transverse direction. The spray rod generates pulsating water in the transverse direction by using vibration, provides a novel flushing water splash, and improves the flushing effect.

Abstract: An abnormality detection method includes displaying a target interface, where n-dimensional visualization space defined by n coordinate axes, and m data points and p target regions that are located in the n-dimensional visualization space are displayed in the target interface, each coordinate axis corresponds to one detection indicator of a detected object, location data of each data point in the n-dimensional visualization space is a data record of the detected object, the data record includes n items of data, each item of data is a value record of the one detection indicator of the detected object, the p target regions are determined by n one-dimensional data intervals, and each one-dimensional data interval is within a range of a corresponding coordinate axis; and displaying, in the target interface, that the detected object is abnormal when k data points in the m data points are located outside the target region.

Abstract: The present disclosure relates to a semiconductor device and a manufacturing method therefor. The semiconductor device includes: a base, where a first surface of the base is provided with a first trench and a second trench; a gate, provided in the first trench; a gate insulation isolation structure, provided in the first trench, wherein the gate insulation isolation structure covers the gate at a bottom, sides and a top of the gate; a source doped region, provided in the base, on both sides of the first trench and on both sides of the second trench; a trench conductive structure, provided in the second trench; a source electrode, provided on the trench conductive structure and the source doped region, and electrically connected to the trench conductive structure and the source doped region; and a drain electrode, provided on a second surface of the base.

Abstract: A semiconductor device comprises a drift region (100), a body region (110), a first doped region (111) and a second doped region (112)); a first trench penetrates the first doped region (111), the body region (110) extends into the drift region (100); an extension region (150) having an opposite conductivity type to the drift region (100) and surrounding the bottom wall of the first trench; where the first trench is filled with a first conductive structure (141) and a second conductive structure (142); a dielectric layer (130) formed between the second conductive structure (142) and the inner wall of the first trench, as well as between the first conductive structure (141) and the inner wall of the first trench; a second trench penetrating the first doped region (111) and the body region (110), and a dielectric layer (130) located between the third conductive structure (143) and the second trench (122).

Abstract: Methods for treating non-alcoholic steatohepatitis using compounds or pharmaceutical compositions that modulate the activity of Bcl-2 family proteins are disclosed. In some methods, the patient to be treated is diagnosed with one or more additional diseases selected from cardiovascular disease, chronic kidney disease, type 2 diabetes mellitus, obesity, and metabolic syndrome, wherein the metabolic syndrome may include, but is not limited to patient presentation of one or more of hypertension, hyperglycaemia, hyper-lipemia, insulin resistance (IR). In some methods, the compound or pharmaceutical composition is administered to the patient in need thereof at a therapeutically effective dose sufficient to elicit one or more effects selected from: reduced liver steatosis, reduced lobular inflammation, reduced hepatocellular ballooning, and reduced liver fibrosis.

Abstract: A preparation method for semiconductor device, comprising: forming a body region (110) in the drift region (100), forming a first doped region (111) and a second doped region (112) in the body region (110); forming a first trench (171) penetrating the first doped region (111) and the body region (110) and extending to the drift region (100); forming an extension region (150) with a conductivity type opposite to that of the drift region (100) and surrounding the bottom wall of the first trench (171); filling the first trench (171) with a dielectric layer (130) formed on the sidewall of the trench, a first conductive structure (141) located at the bottom of the trench and a second conductive structure (142) located at the top of the trench; forming a second trench (172) penetrating the body region (110) and extending into the drift region (100); filling the second trench (172) with a third conductive structure (143) and a dielectric layer (130) formed on the inner wall of the trench.

Abstract: Green, fast and easy evaporating organic solvent for use as a lubricant in the processing of polytetrafluoroethylene (PTFE) and expanded polytetrafluoroethylene (ePTFE) products and processes of using the solvents to fabricate the products are disclosed herein. The products can be used in the field of bio- and medical applications, such as for use in vascular grafts, cardiovascular and soft tissue patches, facial implants, surgical sutures, and endovascular prosthesis, and for any products known in the aerospace, electronics, fabrics, filtration, industrial and sealant arts.

Abstract: Methods for treating systemic lupus erythematosus using compounds or pharmaceutical compositions that modulate the activity of Bcl-2 family proteins are disclosed. In some methods, the patient to be treated is diagnosed with lupus nephritis. In some methods, the compound or pharmaceutical composition is administered to the patient in need thereof at a therapeutically effective dose sufficient to elicit one or more effects selected from: reduced excretion of protein in the urine of the patient, reduced serum anti-dsDNA autoantibody levels in the patient, reduced skin lesion severity in the patient, reduced lymphadenopathy severity in the patient, reduced glomerulonephritis severity in the patient, reduced vasculitis severity in the patient, reduced lymphocyte cell counts in a peripheral blood mononuclear cell (PMBC) panel taken from the patient, reduced lymphocyte cell counts in the spleen of the patient, and reduced lymphocyte infiltration of the kidneys of the patient.

Abstract: Provided herein is a microsuspension of an MDM2 inhibitor, comprising microparticles of the MDM2 inhibitor, e.g., a compound of Formula (I), a surfactant, and a tonicity agent. Also provided herein is a method of treating an MDM2-mediated disorder, disease, or condition with the microsuspension.

Abstract: A semiconductor device comprises a drift region (100), a body region (110), a first doped region (111) and a second doped region (112)); a first trench penetrates the first doped region (111), the body region (110) extends into the drift region (100); an extension region (150) having an opposite conductivity type to the drift region (100) and surrounding the bottom wall of the first trench; where the first trench is filled with a first conductive structure (141) and a second conductive structure (142); a dielectric layer (130) formed between the second conductive structure (142) and the inner wall of the first trench, as well as between the first conductive structure (141) and the inner wall of the first trench; a second trench penetrating the first doped region (111) and the body region (110), and a dielectric layer (130) located between the third conductive structure (143) and the second trench (122).

Abstract: Embodiments of the present disclosure provide methods, systems, apparatuses, and computer program products for generating, training, and utilizing a digital signal processor (DSP) to evaluate graph data that may include irregular grid graph data. An example DSP that may be generated, trained, and used may include a set of hidden layers, wherein each hidden layer of the set of hidden layers comprises a set of heterogeneous kernels (HKs), and wherein each HK of the set of HKs includes a corresponding set of filters selected from the constructed set of filters and associated with one or more initial Laplacian operators and corresponding initial filter parameters.

Abstract: A bidirectional conduction trench gate power MOS device and a manufacturing method thereof are provided. A gate electrode, a source electrode and a drain electrode are formed on a surface of a silicon wafer to realize a bidirectional conduction and bidirectional blocking power MOS device used in an application environment such as lithium battery BMS protection.

Abstract: A preparation method for semiconductor device, comprising: forming a body region (110) in the drift region (100), forming a first doped region (111) and a second doped region (112) in the body region (110); forming a first trench (171) penetrating the first doped region (111) and the body region (110) and extending to the drift region (100); forming an extension region (150) with a conductivity type opposite to that of the drift region (100) and surrounding the bottom wall of the first trench (171); filling the first trench (171) with a dielectric layer (130) formed on the sidewall of the trench, a first conductive structure (141) located at the bottom of the trench and a second conductive structure (142) located at the top of the trench; forming a second trench (172) penetrating the body region (110) and extending into the drift region (100); filling the second trench (172) with a third conductive structure (143) and a dielectric layer (130) formed on the inner wall of the trench.

Abstract: A method for treating patients with viral infections, particularly coronavirus infections, wherein the method comprises administering to the patient a therapeutically effective amount of a compound of any one of formulas (I)-(VI) or Compound 1, 2, 3, 4, or 5, or a pharmaceutically acceptable salt thereof.

Abstract: A method for real-time firmware configuration and a debugging apparatus are provided. When a demand for updating or debugging a target processor raises, in the method, a computer system generates a firmware debugging request that is attached with a firmware data with a specific debugging function. The computer system then loads the firmware data to a programmable logic unit of the debugging apparatus. After the real-time firmware configuration is completed, the computer system issues a debugging command to the programmable logic unit. The programmable logic unit obtains at least one debugging action after resolving the debugging command. The at least one debugging action is performed in the target processor when the target processor receives the at least one debugging action. A debugging result is returned after the at least one debugging action is completed.