Abstract: An electronic device includes a microphone, a processor, and a memory. The memory stores an application for monitoring user information, and the memory stores instructions that, when executed by the processor, cause the electronic device to record a plurality of parameters associated with the user information in the application when a predefined event occurs to record a first parameter and the first parameter is not recorded in the application, to output a message for obtaining the first parameter, to receive a user response associated with the first parameter, to transmit data associated with the user response to an external server, to receive a first response from the external server, and to record the first parameter in the application by allowing the electronic device to have information about sequences of states of the electronic device. The first response includes information about sequences of states of the electronic device for recording the first parameter in the application.

Abstract: An electronic device includes a sensor, a processor, and a memory configured to store at least one instruction executed by the processor, wherein the processor is configured to collect activity information on a user related to the electronic device by using the sensor, the collecting of the activity information including creating an amount of activity of the user for a specific goal or an activity engagement level for the specific goal by using the activity information, adjust at least one of an output time point, an output cycle, the number of outputs, or the output contents of the activity guide information for the user to an activity guide parameter at least based on the amount of activity or the activity engagement level, and output the activity guide information created by using the adjusted activity guide parameter through an output device operatively connected to the processor.

Abstract: A semiconductor device includes an active fin on a substrate, a device isolation film covering a lower portion of the active fin, a gate structure covering the active fin and the device isolation film, and a gate spacer on a side wall of the gate structure, wherein a side wall of the gate structure disposed on the device isolation film is inclined at a uniform inclination from a point higher than a half of a height of the gate structure to a bottom of the gate structure, and an inner side wall of the gate spacer on the device isolation film is inclined at a uniform inclination from a point higher than a half of a height of the gate spacer to a bottom of the gate spacer while forming an acute angle with a bottom surface of the gate spacer.

Abstract: An electronic device includes a display, communication circuitry, at least one sensor, and a processor electrically connected with the display and the at least one sensor. The processor is configured to, based on state information obtained by the at least one sensor satisfying a predefined condition when a health state of a user corresponds to a first state, control transmitting the state information to an external server through the communication circuitry, control receiving from the external server a symptom check result corresponding to the state information, set a health state of the user to a second state based on the symptom check result, and provide a user interface (UI) for user health management at least once until the health state of the user changes from the second state to the first state based on at least one of the state information and the symptom check result.

Abstract: Provided are a method and apparatus for providing digital content and a method and apparatus for displaying digital content. In the displaying method, method of displaying content in a terminal, situational information including at least one of information regarding a user of the terminal and information regarding an external environment is collected, whether the collected situational information conforms to display conditions of the content is determined, and then, the content is selectively displayed based on a result of the determining.

Abstract: Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.

Abstract: Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.

Abstract: An electronic device and a method for activity information are provided. The electronic device includes a sensor configured to collect sensing information according to a motion of the electronic device, and at least one processor operatively connected with the sensor. The at least one processor is configured to control for obtaining activity information including at least one of an exercise amount that is calculated based on first sensing information obtained according to execution of a specified workout, and a movement amount that is calculated based on second sensing information obtained according to a daily life, determining an expected value of an activity amount, by which a user works out, during a specific time period by a user based on the activity information, and providing guide information for achieving an activity goal associated with the user based on at least one of the expected value of the activity amount and the activity information.

Abstract: Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.

Abstract: Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.

Abstract: Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.

Abstract: Disclosed is a method of operating an electronic device. The electronic device includes a display and a processor, which is configured to execute the method including identifying a current position of the electronic device, detecting one or more preset electronic devices based on the identified current position, and displaying the one or more preset electronic devices.

Abstract: In a method of manufacturing a semiconductor device, a dummy gate structure including a dummy gate insulation layer pattern, a dummy gate electrode and a gate mask sequentially stacked are formed on a substrate. An interlayer insulating layer including tonen silazane (TOSZ) is formed on the substrate to cover the dummy gate structure. An upper portion of the interlayer insulating layer is planarized until a top surface of the gate mask is exposed to form an interlayer insulating layer pattern. The exposed gate mask, and the dummy gate electrode and the dummy gate insulation layer pattern under the gate mask are removed to form an opening exposing a top surface of the substrate. The dummy gate insulation layer pattern is removed using an etchant including hydrogen fluoride (HF), but the interlayer insulating layer pattern remains. A gate structure is formed to fill the opening.

Abstract: A method to process contents and an electronic device thereof are provided. A method implemented by an electronic device includes transmitting contents to be summarized, attribute information of the contents, and a summarization command to a server. The method also includes receiving contents from the server that are summarized in the server based on the attribute information of the contents and the summarization command.

Abstract: Methods, apparatus and a system are provided for sharing and using location information in a portable terminal. A setting indicating whether location-information sharing is activated is received for each application of the portable terminal that uses location information. The settings are transmitted to a server. An application for which location-information sharing is activated is executed. A request for sharing of location information with respect to the executed application is transmitted to the server. Location information of a portable terminal in which location-information sharing is activated for the executed application is received from the server. The received location information is processed through the executed application.

Abstract: Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.

Abstract: Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.

Abstract: A method for providing an auto-run service in an electronic device includes identifying state information on the electronic device, performing a first function mapped to the state information on the electronic device based on the state information on the electronic device, determining an event characteristic for the first function, and re-performing the first function when an event corresponding to the event characteristic occurs. Other embodiments including an electronic device for providing an auto-run service are also disclosed.

Abstract: Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.

Abstract: A method of forming a semiconductor device includes forming a gate electrode and source/drain regions in a semiconductor substrate, forming a first capping nitride layer covering the gate electrode and the source/drain regions, the first capping nitride layer including a Si—H rich SiN layer, annealing the semiconductor substrate having the first capping nitride layer, and removing the first capping nitride layer.