Abstract: Provided are a method and apparatus for providing digital content and a method and apparatus for displaying digital content. In the displaying method, method of displaying content in a terminal, situational information including at least one of information regarding a user of the terminal and information regarding an external environment is collected, whether the collected situational information conforms to display conditions of the content is determined, and then, the content is selectively displayed based on a result of the determining.

Abstract: Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.

Abstract: Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.

Abstract: An electronic device and a method for activity information are provided. The electronic device includes a sensor configured to collect sensing information according to a motion of the electronic device, and at least one processor operatively connected with the sensor. The at least one processor is configured to control for obtaining activity information including at least one of an exercise amount that is calculated based on first sensing information obtained according to execution of a specified workout, and a movement amount that is calculated based on second sensing information obtained according to a daily life, determining an expected value of an activity amount, by which a user works out, during a specific time period by a user based on the activity information, and providing guide information for achieving an activity goal associated with the user based on at least one of the expected value of the activity amount and the activity information.

Abstract: Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.

Abstract: Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.

Abstract: Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.

Abstract: Disclosed is a method of operating an electronic device. The electronic device includes a display and a processor, which is configured to execute the method including identifying a current position of the electronic device, detecting one or more preset electronic devices based on the identified current position, and displaying the one or more preset electronic devices.

Abstract: In a method of manufacturing a semiconductor device, a dummy gate structure including a dummy gate insulation layer pattern, a dummy gate electrode and a gate mask sequentially stacked are formed on a substrate. An interlayer insulating layer including tonen silazane (TOSZ) is formed on the substrate to cover the dummy gate structure. An upper portion of the interlayer insulating layer is planarized until a top surface of the gate mask is exposed to form an interlayer insulating layer pattern. The exposed gate mask, and the dummy gate electrode and the dummy gate insulation layer pattern under the gate mask are removed to form an opening exposing a top surface of the substrate. The dummy gate insulation layer pattern is removed using an etchant including hydrogen fluoride (HF), but the interlayer insulating layer pattern remains. A gate structure is formed to fill the opening.

Abstract: A method to process contents and an electronic device thereof are provided. A method implemented by an electronic device includes transmitting contents to be summarized, attribute information of the contents, and a summarization command to a server. The method also includes receiving contents from the server that are summarized in the server based on the attribute information of the contents and the summarization command.

Abstract: Methods, apparatus and a system are provided for sharing and using location information in a portable terminal. A setting indicating whether location-information sharing is activated is received for each application of the portable terminal that uses location information. The settings are transmitted to a server. An application for which location-information sharing is activated is executed. A request for sharing of location information with respect to the executed application is transmitted to the server. Location information of a portable terminal in which location-information sharing is activated for the executed application is received from the server. The received location information is processed through the executed application.

Abstract: Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.

Abstract: Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.

Abstract: A method for providing an auto-run service in an electronic device includes identifying state information on the electronic device, performing a first function mapped to the state information on the electronic device based on the state information on the electronic device, determining an event characteristic for the first function, and re-performing the first function when an event corresponding to the event characteristic occurs. Other embodiments including an electronic device for providing an auto-run service are also disclosed.

Abstract: Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.

Abstract: A method of forming a semiconductor device includes forming a gate electrode and source/drain regions in a semiconductor substrate, forming a first capping nitride layer covering the gate electrode and the source/drain regions, the first capping nitride layer including a Si—H rich SiN layer, annealing the semiconductor substrate having the first capping nitride layer, and removing the first capping nitride layer.

Abstract: A method and apparatus for browsing a plurality of broadcast programs are provided. The method includes classifying a plurality of broadcast programs into one or more broadcast program groups with reference to electronic program guide (EPG) information or viewing records of a user regarding the broadcast programs, one-dimensionally arranging the broadcast programs so that the broadcast program groups are one-dimensionally arranged, displaying the broadcast programs and the broadcast program groups on a screen as a graphic image, and allowing the user to change a rule used for forming the broadcast program groups. Accordingly, it is possible to enable a user to effectively browse broadcast programs and to provide the user with a user interface customized for the user by using a simple one-dimensional input method and intuitively utilizing EPG information.

Abstract: A device and a method for providing user activity information in a portable terminal are provided. The method includes receiving and storing log data from a specific application, generating user situation information representing a current status of a user based on the stored log data, and transmitting the generated user situation information to the specific application.

Abstract: Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.

Abstract: A location recognition method is provided. The method includes determining location search targets in a DataBase (DB) including location information on the basis of first network information, selecting at least one place from the determined location search targets on the basis of second network information, measuring a relative distance by using first signal strength and second signal strength with respect to the selected at least one place, and recognizing the selected at least one place as a current location on the basis of the relative distance. Accordingly, various personalized service scenarios can be provided to the user.