Abstract: The present disclosure relates to an organic electroluminescence device. The organic electroluminescence device of the present disclosure comprises a specific combination of a host compound and a hole transport material which can provide excellent lifespan characteristics.

Abstract: The present disclosure relates to an organic electroluminescent device comprising a light-emitting layer and a hole transport zone. By comprising a specific combination of a light-emitting layer and a hole transport zone, it is possible to provide an organic electroluminescent device having low driving voltage, high luminous efficiency and/or long lifespan properties.

Abstract: The present disclosure relates to an organic electroluminescent material comprising at least two types of compounds and an organic electroluminescent device comprising the same. The organic electroluminescent device having color purity superior to that of a conventional organic electroluminescent device can be provided by comprising the specific combination of the compounds of the present disclosure.

Abstract: The present disclosure relates to an organic electroluminescent compound and an organic electroluminescent device comprising the same. By comprising the organic electroluminescent compound of the present disclosure, it is possible to provide an organic electroluminescent device having low driving voltage and/or high luminous efficiency properties while exhibiting deep red color compared to a conventional organic electroluminescent device.

Abstract: The present disclosure relates to an organic electroluminescent device. The organic electroluminescent device of the present disclosure can provide an excellent lifespan characteristic by comprising a specific combination of a host compound and a hole transport material.

Abstract: The present disclosure relates to an organic electroluminescent device. The organic electroluminescent device of the present disclosure can provide a low driving voltage and excellent luminous efficiency by comprising a specific combination of a host compound and a hole transport material.

Abstract: The present disclosure relates to an organic electroluminescent material comprising at least two types of compounds and an organic electroluminescent device comprising the same. The organic electroluminescent device having better color purity than a conventional organic electroluminescent device can be provided by comprising the specific combination of the compounds of the present disclosure.

Abstract: Implementations described herein generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of amorphous carbon films on a substrate. In one implementation, a method of forming an amorphous carbon film is provided. The method comprises depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further comprises implanting a dopant or inert species into the amorphous carbon film in a second processing region. The dopant or inert species is selected from carbon, boron, nitrogen, silicon, phosphorous, argon, helium, neon, krypton, xenon or combinations thereof. The method further comprises patterning the doped amorphous carbon film. The method further comprises etching the underlayer.

Abstract: A method and apparatus for removing deposition products from internal surfaces of a processing chamber, and for preventing or slowing growth of such deposition products. A halogen containing gas is provided to the chamber to etch away deposition products. A halogen scavenging gas is provided to the chamber to remove any residual halogen. The halogen scavenging gas is generally activated by exposure to electromagnetic energy, either inside the processing chamber by thermal energy, or in a remote chamber by electric field, UV, or microwave. A deposition precursor may be added to the halogen scavenging gas to form a deposition resistant film on the internal surfaces of the chamber. Additionally, or alternately, a deposition resistant film may be formed by sputtering a deposition resistant metal onto internal components of the processing chamber in a PVD process.

Abstract: A method and apparatus for removing deposition products from internal surfaces of a processing chamber, and for preventing or slowing growth of such deposition products. A halogen containing gas is provided to the chamber to etch away deposition products. A halogen scavenging gas is provided to the chamber to remove any residual halogen. The halogen scavenging gas is generally activated by exposure to electromagnetic energy, either inside the processing chamber by thermal energy, or in a remote chamber by electric field, UV, or microwave. A deposition precursor may be added to the halogen scavenging gas to form a deposition resistant film on the internal surfaces of the chamber. Additionally, or alternately, a deposition resistant film may be formed by sputtering a deposition resistant metal onto internal components of the processing chamber in a PVD process.

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for substrate processing includes a process chamber having a chamber body defining an inner volume; and a silicon containing coating disposed on an interior surface of the chamber body, wherein an outer surface of the silicon containing coating is at least 35 percent silicon (Si) by atom. In some embodiments, a method for forming a silicon containing coating in a process chamber includes providing a first process gas comprising a silicon containing gas to an inner volume of the process chamber; and forming a silicon containing coating on an interior surface of the process chamber, wherein an outer surface of the silicon containing coating is at least 35 percent silicon.

Abstract: A method and apparatus for removing deposition products from internal surfaces of a processing chamber, and for preventing or slowing growth of such deposition products. A halogen containing gas is provided to the chamber to etch away deposition products. A halogen scavenging gas is provided to the chamber to remove any residual halogen. The halogen scavenging gas is generally activated by exposure to electromagnetic energy, either inside the processing chamber by thermal energy, or in a remote chamber by electric field, UV, or microwave. A deposition precursor may be added to the halogen scavenging gas to form a deposition resistant film on the internal surfaces of the chamber. Additionally, or alternately, a deposition resistant film may be formed by sputtering a deposition resistant metal onto internal components of the processing chamber in a PVD process.

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for substrate processing includes a process chamber having a chamber body defining an inner volume; and a silicon containing coating disposed on an interior surface of the chamber body, wherein an outer surface of the silicon containing coating is at least 35 percent silicon (Si) by atom. In some embodiments, a method for forming a silicon containing coating in a process chamber includes providing a first process gas comprising a silicon containing gas to an inner volume of the process chamber; and forming a silicon containing coating on an interior surface of the process chamber, wherein an outer surface of the silicon containing coating is at least 35 percent silicon.

Abstract: Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, the method for implanting ions into a substrate by a plasma immersion ion implantation process includes providing a substrate into a processing chamber, supplying a gas mixture including a reacting gas and a reducing gas into the chamber, and implanting ions from the gas mixture into the substrate. In another embodiment, the method includes providing a substrate into a processing chamber, supplying a gas mixture including reacting gas and a hydrogen containing reducing gas into the chamber, and implanting ions from the gas mixture into the substrate.

Abstract: Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, the method for implanting ions into a substrate by a plasma immersion ion implantation process includes providing a substrate into a processing chamber, supplying a gas mixture including a reacting gas and a reducing gas into the chamber, and implanting ions from the gas mixture into the substrate. In another embodiment, the method includes providing a substrate into a processing chamber, supplying a gas mixture including reacting gas and a hydrogen containing reducing gas into the chamber, and implanting ions from the gas mixture into the substrate.

Abstract: Embodiments of the present invention provide an apparatus for constraining and supporting the lift pins to prevent or minimize lateral movement of the lift pins that causes substrate hand-off problems and associated degradation in substrate processing characteristics and results. In one embodiment, a lift pin assembly for manipulating a substrate above a support surface of a substrate support comprises a plurality of lift pins movable between an up position and a down position. The lift pins include top ends and bottom ends. The top ends are configured to be lifted above the support surface of the substrate support to contact a bottom surface of the substrate in the up position. The top ends are configured to be positioned at or below the support surface of the substrate support in the down position.

Abstract: Embodiments of the present invention provide an apparatus for constraining and supporting the lift pins to prevent or minimize lateral movement of the lift pins that causes substrate hand-off problems and associated degradation in substrate processing characteristics and results. In one embodiment, a lift pin assembly for manipulating a substrate above a support surface of a substrate support comprises a plurality of lift pins movable between an up position and a down position. The lift pins include top ends and bottom ends. The top ends are configured to be lifted above the support surface of the substrate support to contact a bottom surface of the substrate in the up position. The top ends are configured to be positioned at or below the support surface of the substrate support in the down position.