Abstract: Provided is an apparatus for generating digital values to provide a random digital value. The apparatus may generate the digital value based on a semiconductor process variation. The apparatus may include a generating unit to generate a plurality of digital values, based on the semiconductor process variation, and a processing unit to process the digital values and to provide a first digital value. The generating unit may include a plurality of physically unclonable functions (PUFs). A parameter may be differently applied to the PUFs, and the PUFs may generate the digital values.

Abstract: Provided is a device for generating an identification key using a process variation during a manufacturing process of a conductive layer. The device for generating an identification key may include a plurality of conductive layers designed so as to be formed in a first region within a semiconductor chip, the density in which the plurality of conductive layers are disposed in the first region being at least a first threshold value and not more than a second threshold value, the first and second threshold values being less than a minimum density according to the design rules for ensuring that all of the plurality of conductive layers are formed in the first region; and a reader which provides an identification key by identifying if, among the plurality of conductive layers, a previously designated first conductive layer has been formed.

Abstract: Disclosed is an authentication apparatus using a public key encryption algorithm. An apparatus according to an embodiment generates a first instant public key through a random number generation process in response to an electronic signature generation request corresponding to a message. Further, the apparatus calculates and uses a first instant private key making a pair with the first instant public key, using the first instant public key.

Abstract: Provided are a device and method for generating an identification key using process variation during a bipolar junction transistor (BJT) process. A BJT may be produced by designing such that the effective base width of the BJT is at least a first threshold value but not more than a second threshold value, or, such that the total of the width of a second depletion region formed by connection with a collector region and the width of a first depletion region formed by connection with an emitter region, within a base region, differs from the width of the base region by a value that is at least the first threshold value but not more than the second threshold value. Whether or not there is a short circuit between the emitter region and the collector region is stochastically generated, and if ordinary turn-on voltage is not applied, whether or not there is a short circuit is identified.

Abstract: Provided are a device and method for generating an identification key using process variation during a bipolar junction transistor (BJT) process. A BJT may be produced by designing such that the effective base width of the BJT is at least a first threshold value but not more than a second threshold value, or, such that the total of the width of a second depletion region formed by connection with a collector region and the width of a first depletion region formed by connection with an emitter region, within a base region, differs from the width of the base region by a value that is at least the first threshold value but not more than the second threshold value. Whether or not there is a short circuit between the emitter region and the collector region is stochastically generated by means of process variation, and if ordinary turn-on voltage is not applied to the base in the produced BJT, whether or not there is a short circuit is identified by means of a reader and an identifier is provided.

Abstract: Disclosed is a method of generating a physical unclonable function (PUF) by causing unpredictable partial process failure for a semiconductor process. In a designing process, a second mask pattern may be printed by distorting a size and/or shape of at least one mask window included in a designed first mask pattern, without violating semiconductor design rules. A PUF may be generated using a photomask including the printed second mask pattern for photolithography.

Abstract: Disclosed is a method of generating a physical unclonable function (PUF) by causing unpredictable partial process failure for a semiconductor process. In a designing process, a second mask pattern may be printed by distorting a size and/or shape of at least one mask window included in a designed first mask pattern, without violating semiconductor design rules. A PUF may be generated using a photomask including the printed second mask pattern for photolithography.

Abstract: A secure semiconductor chip is presented. The semiconductor chip is, for example, a system-on-chip. Processor cores included in the system-on-chip are connected to normal IPs through a system bus. A secure bus, which is a hidden bus physically separated from the system bus, is provided separately. The secure bus is connected to security IPs which perform security functions or handle security data. The secure semiconductor chip may perform necessary authentication by switching a normal mode to a secure mode.

Abstract: Provided are a device and method for generating an identification key using process variation during a bipolar junction transistor (BJT) process. A BJT may be produced by designing such that the effective base width of the BJT is at least a first threshold value but not more than a second threshold value, or, such that the total of the width of a second depletion region formed by connection with a collector region and the width of a first depletion region formed by connection with an emitter region, within a base region, differs from the width of the base region by a value that is at least the first threshold value but not more than the second threshold value. Whether or not there is a short circuit between the emitter region and the collector region is stochastically generated by means of process variation, and if ordinary turn-on voltage is not applied to the base in the produced BJT, whether or not there is a short circuit is identified by means of a reader and an identifier is provided.

Abstract: Provided is a device for generating an identification key using a process variation during a manufacturing process of a conductive layer. The device for generating an identification key may include a plurality of conductive layers designed so as to be formed in a first region within a semiconductor chip, the density in which the plurality of conductive layers are disposed in the first region being at least a first threshold value and not more than a second threshold value, the first and second threshold values being less than a minimum density according to the design rules for ensuring that all of the plurality of conductive layers are formed in the first region; and a reader which provides an identification key by identifying if, among the plurality of conductive layers, a previously designated first conductive layer has been formed.

Abstract: Provided is an apparatus for generating an identification key by a probabilistic determination of a short occurring between nodes constituting a circuit, by violating a design rule provided during a semiconductor manufacturing process. The identification key generating apparatus may include an identification key generator to generate an identification key based on whether a contact or a via used to electrically connect conductive layers in a semiconductor chip shorts the conductive layers, and an identification key reader to read the identification key by reading whether the contact or the via shorts the conductive layers.

Abstract: Provided are a device and method for generating an identification key using process variation during a bipolar junction transistor (BJT) process. A BJT may be produced by designing such that the effective base width of the BJT is at least a first threshold value but not more than a second threshold value, or, such that the total of the width of a second depletion region formed by connection with a collector region and the width of a first depletion region formed by connection with an emitter region, within a base region, differs from the width of the base region by a value that is at least the first threshold value but not more than the second threshold value. Whether or not there is a short circuit between the emitter region and the collector region is stochastically generated, and if ordinary turn-on voltage is not applied, whether or not there is a short circuit is identified.

Abstract: Provided is an information processing apparatus including a physical unclonable function (PUF) to generate a unique key using a process variation in a semiconductor manufacturing process, and an encryption unit to encrypt a password and/or bio-information received from a user using the unique key.

Abstract: A vehicle security network design device may comprise: a level assigning unit for assigning an automobile safety integrity level (ASIL) which provides a risk management standard for each of a plurality of functional elements in a vehicle that is at least temporarily implemented by a processor; a calculation unit for calculating device's controllability with respect to each of the plurality of functional elements on the basis of a connection structure between the plurality of functional elements and a difference value of the ASIL; and a management unit for generating a risk analysis model of a plurality of functional elements.

Abstract: Disclosed is a secure semiconductor chip. The semiconductor chip is, for example, a system-on-chip. The system-on-chip is operated by connecting normal IPs to a processor core included therein via a system bus. A secure bus, which is a hidden bus physically separated from the system bus, is separately provided. Security IPs for performing a security function or handling security data are connected to the secure bus. The secure semiconductor chip can perform required authentication while shifting between a normal mode and a secure mode.

Abstract: An IC chip for preventing an authentication key from leaking, and an authentication key setting and authentication key verifying method are provided. A part performing connection or disconnection between an external terminal and a smartcard chip may be configured by a separate chip or may be incorporated into the smartcard chip to configure a single chip. When the part is configured by the separate chip, the disconnection between the external terminal and the smart card chip can be performed according to whether an authentication key is verified. When the part is configured by the one chip, the disconnection between the external terminal and the smart card chip can be performed under a control of the smartcard chip according to whether the authentication key is verified.

Abstract: A randomness testing apparatus is disclosed. A randomness testing apparatus according to an embodiment includes a randomness testing module to conduct a randomness test on physically unclonable function (PUF)-based hardware and a processing device to determine whether the PUF-based hardware is defective on the basis of a randomness test result.

Abstract: Provided is an apparatus for generating an identification key by a probabilistic determination of a short occurring between nodes constituting a circuit, by violating a design rule provided during a semiconductor manufacturing process. The identification key generating apparatus may include an identification key generator to generate an identification key based on whether a contact or a via used to electrically connect conductive layers in a semiconductor chip shorts the conductive layers, and an identification key reader to read the identification key by reading whether the contact or the via shorts the conductive layers.

Abstract: Provided is a device for generating an identification key using a process variation during a manufacturing process of a conductive layer. The device for generating an identification key may include a plurality of conductive layers designed so as to be formed in a first region within a semiconductor chip, the density in which the plurality of conductive layers are disposed in the first region being at least a first threshold value and not more than a second threshold value, the first and second threshold values being less than a minimum density according to the design rules for ensuring that all of the plurality of conductive layers are formed in the first region; and a reader which provides an identification key by identifying if, among the plurality of conductive layers, a previously designated first conductive layer has been formed.

Abstract: Provided are a device and method for generating an identification key using process variation during a bipolar junction transistor (BJT) process. A BJT may be produced by designing such that the effective base width of the BJT is at least a first threshold value but not more than a second threshold value, or, such that the total of the width of a second depletion region formed by connection with a collector region and the width of a first depletion region formed by connection with an emitter region, within a base region, differs from the width of the base region by a value that is at least the first threshold value but not more than the second threshold value. Whether or not there is a short circuit between the emitter region and the collector region is stochastically generated, and if ordinary turn-on voltage is not applied, whether or not there is a short circuit is identified.