Abstract: An anisotropic conductive film includes a binder part, a curing part, an initiator, and conductive particles, wherein the binder part includes at least one of a nitrile butadiene rubber (NBR) resin and a urethane resin, the anisotropic conductive film has a halogen ion content of more than 0 ppm to about 100 ppm.

Abstract: An anisotropic conductive film includes a binder part, a curing part, an initiator, and conductive particles, wherein the binder part includes at least one of a nitrile butadiene rubber (NBR) resin and a urethane resin, wherein the anisotropic conductive film has an electrical conductivity of more than 0 ?S/cm to about 100 ?S/cm.

Abstract: An anisotropic conductive film includes a binder part, a curing part, an initiator, and conductive particles, wherein the binder part includes at least one of a nitrile butadiene rubber (NBR) resin and a urethane resin, the binder part having an ion content of more than 0 ppm to about 100 ppm.

Abstract: An adhesive composition for a semiconductor has two exothermic peaks between 65° C. and 350° C. and has an area ratio of voids of less than 10%, measured after curing at 150° C. for 10 minutes and then at 150° C. for 30 minutes, and then molding at 175° C. for 60 seconds. A first exothermic peak appears between 65° C. and 185° C. and a second exothermic peak appears between 155° C. and 350° C.

Abstract: A pressure sensitive dicing die bonding film includes a base film, a pressure sensitive adhesive layer formed on the base film, and a bonding layer formed on the pressure sensitive adhesive layer. An adhesive strength between the pressure sensitive adhesive layer and the bonding layer and an adhesive strength between the pressure sensitive adhesive layer and a ring frame may satisfy the following relation: B/A?1.1 where A is the adhesive strength between the pressure sensitive adhesive layer and the bonding layer, and B is the adhesive strength between the pressure sensitive adhesive layer and the ring frame.

Abstract: An anisotropic conductive film, the anisotropic conductive film including an insulating layer and a conductive layer laminated on the insulating layer, the conductive layer containing conductive particles, wherein after glass substrates are positioned to face each other on the upper and lower surface of the anisotropic conductive film and are pressed against the anisotropic conductive film at 3 MPa (based on the sample area) and 160° C. (based on the detection temperature of the anisotropic conductive film) for 5 sec, a ratio of the area of the insulating layer to that of the conductive layer is from about 1.3:1 to about 3.0:1.

Abstract: An anisotropic conductive film includes a first insulating adhesive layer, a conductive adhesive layer, and a second insulating adhesive layer which are sequentially stacked on a base film, wherein an adhesive strength ratio of the second insulating adhesive layer to the first insulating adhesive layer is about 1.1 to about 20.

Abstract: An electronic device includes an anisotropic conductive film as a connection material, the anisotropic conductive film being formed from an anisotropic conductive film-forming composition. The anisotropic conductive film-forming composition includes a polycyclic aromatic ring-containing epoxy resin, a fluorene epoxy resin, nano silica and conductive particles.

Abstract: A semiconductor device bonded by an anisotropic conductive film, the anisotropic conductive film including a phenoxy resin including a fluorene-substituted phenoxy resin; and a radically polymerizable resin including a fluorene-substituted acrylate.

Abstract: An electronic device includes an anisotropic conductive adhesive film as a connection material, wherein the anisotropic conductive adhesive film has a flowability of 50% or more after preliminary pressing at 80° C. and 1 MPa for 1 second and final pressing at 180° C. and 3 MPa for 5 seconds, and a connection resistance increment greater than 0% but not greater than 25%, as calculated by Expression 1: Connection resistance increment (%)=(A?B)/A×100??(Expression 1) where A is a connection resistance measured after preliminary pressing at 80° C. and 1 MPa for 1 second and final pressing at 180° C. and 3 MPa for 5 seconds, and B is a connection resistance measured after reliability evaluation at a temperature of 85° C. and a humidity of 85% for 250 hours following preliminary pressing and final pressing.

Abstract: A semiconductor device includes an anisotropic conductive film for connecting the semiconductor device. The anisotropic conductive film includes a first conductive layer that has first conductive particles. The first conductive particles include cores containing silica or a silica composite, and have a 20% K-value ranging from about 7,000 N/mm2 to about 12,000 N/mm2.

Abstract: A semiconductor device bonded by an anisotropic conductive film and an anisotropic conductive film composition, the anisotropic conductive film including a reactive monomer having an epoxy equivalent weight of about 120 to about 180 g/eq; a hydrogenated epoxy resin; and a sulfonium cation curing catalyst.

Abstract: An anisotropic conductive film composition for bonding an electronic device may include a hydrogenated bisphenol A epoxy monomer represented by Formula 1 or a hydrogenated bisphenol A epoxy oligomer represented by Formula 2: where n may be an integer from 1 to about 50.

Abstract: An electronic device includes a connection material formed from an adhesive composition that includes: a polymer resin; a cationic polymerization catalyst represented by Formula 1; and an organic base, where, in Formula 1, R1 may be selected from the group of hydrogen, C1-C6 alkyl, C6-C14 aryl, —C(?O)R4, —C(?O)OR5, and —C(?O)NHR6 (in which R4, R5, and R6 may each independently be selected from C1-C6 alkyl and C6-C14 aryl), R2 may be C1-C6 alkyl, and R3 may be selected from the group of a nitrobenzyl group, a dinitrobenzyl group, a trinitrobenzyl group, a benzyl group, a C1-C6 alkyl-substituted benzyl group, and a naphthylmethyl group.

Abstract: A semiconductor device bonded by an anisotropic conductive film, the anisotropic conductive film including a conductive adhesive layer and an insulating adhesive layer stacked thereon, an amount of reactive monomers in the conductive adhesive layer being higher than an amount of reactive monomers in the insulating adhesive layer.

Abstract: A hardmask composition includes an organic solvent and one or more aromatic ring-containing polymers represented by Formulae 1, 2 and 3:

Abstract: A semiconductor device bonded by an anisotropic conductive adhesive composition, the anisotropic conductive adhesive composition having a solid content ratio between a polymer binder system and a curing system of about 40:60 to about 60:40, and a coefficient of thermal expansion of about 150 ppm/° C. or less at about 100° C. or less.

Abstract: The present invention provides a liquid crystal photoalignment agent that includes a compound selected from the group consisting of a polyamic acid having a predetermined chemical formula, a polyimide polymer having a predetermined chemical formula, and a combination thereof, and a polyimide photopolymer. The liquid crystal photoalignment agent shows a long life-span, stably maintains a pretilt angle, and shows improved after-image characteristics, liquid crystal alignment properties, and chemical resistance.

Abstract: An aromatic ring-containing polymer, a polymer mixture, an antireflective hardmask composition, and a method for patterning a material on a substrate, the aromatic ring-containing polymer including at least one aromatic ring-containing polymer represented by Formulae 1, 2, or 3.

Abstract: A compound for filling small gaps in a semiconductor device and a composition comprising the compound are provided. The composition can completely fill holes having a diameter of 70 nm or less and an aspect ratio (i.e. height/diameter ratio) of 1 or more in a semiconductor substrate without any defects, e.g., air voids, by a general spin coating technique. In addition, the composition can be completely removed from holes at a controllable rate without leaving any residue by the treatment with a hydrofluoric acid solution after being cured by baking. Furthermore, the composition is highly stable during storage.