Abstract: Hardmask compositions having antireflective properties useful in lithographic processes, methods of using the same, and semiconductor devices fabricated by such methods, are provided.

Abstract: The present invention provides a liquid crystal photoalignment agent that includes a compound selected from the group consisting of a polyamic acid having a predetermined chemical formula, a polyimide polymer having a predetermined chemical formula, and a combination thereof, and a polyimide photopolymer. The liquid crystal photoalignment agent shows a long life-span, stably maintains a pretilt angle, and shows improved after-image characteristics, liquid crystal alignment properties, and chemical resistance.

Abstract: A polymer for gap-filling in a semiconductor device, the polymer being prepared by polycondensation of hydrolysates of the compound represented by Formula 1, the compound represented by Formula 2, and one or more compounds represented by Formulae 3 and 4: [RO]3Si—[CH2]n—Si[OR]3??(1) wherein n is from 0 to 2 and each R is independently a C1-C6 alkyl group; [RO]3Si—[CH2]nX??(2) wherein X is a C6-C12 aryl group, n is from 0 to 2, and R is a C1-C6 alkyl group; [RO]3Si—R???(3) wherein R and R? are independently a C1-C6 alkyl group; and [RO]3Si—H??(4) wherein R is a C1-C6 alkyl group.

Abstract: Disclosed is an organic layer photosensitive resin composition and an organic layer fabricated using the same. The organic layer photosensitive resin composition includes (A) an organic binder resin, (B) a reactive unsaturated compound, (C) a polymerization initiator, (D) a black pigment including a lactam-based black pigment, and (E) a solvent.

Abstract: Disclosed is an epoxy compound for a liquid crystal photo-alignment agent, a liquid crystal photo-alignment agent, and a liquid crystal photo-alignment film. The epoxy compound is represented by the following Chemical Formula 1. In the above Chemical Formula 1, each substituent is the same as defined in the specification. Since the epoxy compound according to an embodiment of the present invention may be prepared through a simple manufacturing process, it is possible to provide a liquid crystal photo-alignment agent and a liquid crystal photo-alignment film that are economical and have excellent substrate printability and reliability, and superb photoelectric characteristics.

Abstract: Disclosed are a liquid crystal alignment agent, and a liquid crystal alignment film and a liquid crystal display (LCD) including the same. The liquid crystal alignment agent includes a polymer of polyamic acid, a polyimide, or a combination thereof, and an epoxy compound represented by the following Chemical Formula 1. In the above Chemical Formula 1, each substituent is the same as defined in the specification.

Abstract: A compound for filling small gaps in a semiconductor device and a composition comprising the compound are provided. The composition can completely fill holes having a diameter of 70 nm or less and an aspect ratio (i.e. height/diameter ratio) of 1 or more in a semiconductor substrate without any defects, e.g., air voids, by a general spin coating technique. In addition, the composition can be completely removed from holes at a controllable rate without leaving any residue by the treatment with a hydrofluoric acid solution after being cured by baking. Furthermore, the composition is highly stable during storage.

Abstract: A naphthalene-backbone polymer represented by Formula 1: wherein n and m are independently at least 1 and less than about 190, R1 is a hydrogen, a hydroxyl, a hydrocarbon group of about 10 carbons or less, or a halogen, R2 is methylene or includes an aryl linking group, R3 is a conjugated diene group, and R4 is an unsaturated dienophile group.

Abstract: An antireflective hardmask composition includes an organic solvent, and at least one polymer represented by Formulae A, B or C: In Formulae A and B, the fluorene group is unsubstituted or substituted, in Formula C, the naphthalene group is unsubstituted or substituted, n is at least 1 and is less than about 750, m is at least 1, and m+n is less than about 750, G is an aromatic ring-containing group having an alkoxy group, and R1 is methylene or includes a non-fluorene-containing aryl linking group.

Abstract: An aromatic ring-containing polymer, a polymer mixture, an antireflective hardmask composition, and a method for patterning a material on a substrate, the aromatic ring-containing polymer including at least one aromatic ring-containing polymer represented by Formulae 1, 2, or 3.

Abstract: Provided herein are hardmask compositions that include an organosilane polymer prepared by the reaction of one or more compounds of Formula (I) Si(OR1)(OR2)(OR3)R4 wherein R1, R2 and R3 may each independently be alkyl acetoxy or oxime; and R4 may be hydrogen, alkyl, aryl or arylalkyl; and wherein the organosilane polymer has a polydispersity in a range of about 1.1 to about 2.

Abstract: A hardmask composition for processing a resist underlayer film includes a solvent and an organosilane polymer, wherein the organosilane polymer is represented by Formula 6: In Formula 6, R is methyl or ethyl, R? is substituted or unsubstituted cyclic or acyclic alkyl, Ar is an aromatic ring-containing functional group, x, y and z satisfy the relations x+y=4, 0.4?x?4, 0?y?3.6, and 4×10?4?z?1, and n is from about 3 to about 500.

Abstract: One embodiment of the present invention provides a liquid crystal photo-alignment agent that includes a polyamic acid copolymer including a repeating unit having the following Formula 1 and a repeating unit having the following Formula 2; a polyimide copolymer including a repeating unit having the following Formula 3 and a repeating unit having the following Formula 4; or a combination thereof: wherein the definition of R1 to R8 are the same as in the specification. The liquid crystal photo-alignment agent can have improved liquid crystal alignment properties, electrical characteristics such as voltage holding ratio, pretilt angle, residual DC, and the like, printability, cleaning stability, and spot stability, and is capable of unidirectionally aligning liquid crystals by ultraviolet (UV) exposure.

Abstract: An anisotropic conductive film composition includes a polymer resin, a first epoxy resin including at least one of a bisphenol epoxy resin, a novolac epoxy resin, a glycidyl epoxy resin, an aliphatic epoxy resin, and an alicyclic epoxy resin, a second epoxy resin including an acetal epoxy resin, an epoxy resin curing agent, and conductive particles.

Abstract: The present invention relates to a color filter ink composition including an acryl-based resin, a polymerizable monomer, a pigment, a leveling agent, and a solvent. The pigment is represented by the following Chemical Formula 1, and the leveling agent is a polymer including a repeating unit including at least one of the following Chemical Formula 2, Chemical Formula 3, or combinations thereof. In the above Formulae 1 to 3, each substituent is the same as in the detailed description.

Abstract: Provided herein are hardmask compositions for resist underlayer films, wherein in some embodiments, the hardmask compositions include (a) a first polymer prepared by the reaction of a compound of Formula 1 ?wherein n is a number of 3 to 20, with a compound of Formula 2 (R)m—Si—(OCH3)4-m??(2) ?wherein R is a monovalent organic group and m is 0, 1 or 2; (b) a second polymer that includes at least one of the structures represented by Formulae 3-6; (c) an acid or base catalyst; and (d) an organic solvent. Further provided herein are methods for producing a semiconductor integrated circuit device using a hardmask composition according to an embodiment of the present invention. In addition, provided herein are semiconductor integrated circuit devices produced by a method embodiment of the invention.

Abstract: A hardmask composition includes an organic solvent and one or more aromatic ring-containing polymers represented by Formulae 1, 2 and 3:

Abstract: Hardmask compositions having antireflective properties useful in lithographic processes, methods of using the same, and semiconductor devices fabricated by such methods, are provided. Antireflective hardmask compositions of the invention include: (a) a polymer component including at least one polymer having a monomeric unit of Formula (I) wherein R1 and R2 may each independently be hydrogen, hydroxyl, C1-10 alkyl, C6-10 aryl, allyl, or halo; R3 and R4 may be each independently be hydrogen, a crosslinking functionality, or a chromophore; R5 and R6 may each independently be hydrogen or an alkoxysiloxane having the structure of Formula (II), wherein at least one of R5 and R6 is an alkoxysilane; wherein R8, R9, and R10 may each independently be a hydrogen, alkyl, or aryl; and x is 0 or a positive integer; R7 may be hydrogen, C1-10 alkyl, C6-10 aryl, or allyl; and n is a positive integer; (b) a crosslinking component; and (c) an acid catalyst.

Abstract: An antireflective hardmask composition includes an organic solvent, an initiator, and at least one polymer represented by Formulae A, B, or C:

Abstract: A naphthalene-backbone polymer represented by Formula 1: wherein n and m are independently at least 1 and less than about 190, R1 is a hydrogen, a hydroxyl, a hydrocarbon group of about 10 carbons or less, or a halogen, R2 is methylene or includes an aryl linking group, R3 is a conjugated diene group, and R4 is an unsaturated dienophile group.