Abstract: A method for fabricating a semiconductor device includes forming a trench in a substrate, forming a gate dielectric layer on a surface of the trench, forming a lower gate, which partially fills the trench, over the gate dielectric layer, forming a low work function layer over the lower gate, forming a spacer over the low work function layer, etching the low work function layer to be self-aligned with the spacer in order to form vertical gate on both upper edges of the lower gate, and forming an upper gate over the lower gate between inner sidewalls of the vertical gate.

Abstract: Disclosed is a semiconductor device for improving a gate induced drain leakage and a method for fabricating the same, and the semiconductor device includes a substrate, a first doped region and a second doped region formed to be spaced apart from each other by a trench in the substrate, a first gate dielectric layer over the trench, a lower gate over the first gate dielectric layer, an upper gate over the lower gate and having a smaller width than the lower gate, and a second gate dielectric layer between the upper gate and the first gate dielectric layer.

Abstract: Provided is an apparatus for treating waste gas of the electronics industry, and the apparatus includes: a reaction chamber in which an inlet and an outlet are formed and an inner space for purifying waste gas is formed; a first partition plate extending from an inner wall of the reaction chamber facing the inlet in a direction toward the inlet, dividing the inner space into a pre-treatment zone for collecting dust in the waste gas and a remaining purification zone; a second partition plate extending vertically downward from a ceiling of the reaction chamber, dividing the purification zone into a thermal decomposition zone for heating and thermally decomposing waste gas and a post-treatment zone; and a heater installed at the ceiling of the reaction chamber so as to be located in the thermal decomposition zone to thermally decompose a perfluorinated compound by heating waste gas introduced into the thermal decomposition zone; and a dry scrubber unit including one or more catalysts to collect at least one of t

Abstract: Present invention relates to a semiconductor device including a buried gate structure. A semiconductor device comprises a substrate; a first fluorine-containing layer over the substrate; a trench formed in the first fluorine-containing layer and extended into the substrate; a gate dielectric layer formed over the trench; a gate electrode formed over the gate dielectric layer and filling a portion of the trench; a second fluorine-containing layer formed over the gate electrode; and a fluorine-containing passivation layer between the gate dielectric layer and the gate electrode.

Abstract: The present invention relates to a semiconductor device with improved reliability and a method for manufacturing the same. A semiconductor device according to the present invention may comprise: a substrate including a gate trench; a gate insulating layer formed on a surface of the gate trench; and silicon-doped metal nitride on the gate insulating layer, wherein the silicon-doped metal nitride has a silicon concentration of less than 1 at %.

Abstract: Provided is an apparatus for treating waste gas of the electronics industry, and the apparatus includes: a reaction chamber in which an inlet and an outlet are formed and an inner space for purifying waste gas is formed; a first partition plate extending from an inner wall of the reaction chamber facing the inlet in a direction toward the inlet, dividing the inner space into a pre-treatment zone for collecting dust in the waste gas and a remaining purification zone; a second partition plate extending vertically downward from a ceiling of the reaction chamber, dividing the purification zone into a thermal decomposition zone for heating and thermally decomposing waste gas and a post-treatment zone; and a heater installed at the ceiling of the reaction chamber so as to be located in the thermal decomposition zone to thermally decompose a perfluorinated compound by heating waste gas introduced into the thermal decomposition zone; and a dry scrubber unit including one or more catalysts to collect at least one of t

Abstract: A display device includes signal lines and pixels connected thereto. A first pixel includes a first transistor including a first gate electrode, a first channel region overlapping the first gate electrode, a first source region, and a second drain region facing the first source region, with the first channel region interposed between the first source region and the second drain region. A third transistor includes a third gate electrode, a third channel region overlapping the third gate electrode, a third drain region connected to the first gate electrode, and a third source region facing the third drain region with the third channel region interposed between the third source region and the third drain region. A shielding part overlaps a boundary between the third source region and the third channel region and does not overlap a boundary between the third drain region and the third channel region.

Abstract: Disclosed is an eco-friendly adhesive coating agent composition having high adhesion properties and fast-curing properties by using a thiol-modified epoxy intermediate. The composition includes: a main material including 25 to 40 parts by weight of polyoxypropyleneamine, 20 to 30 parts by weight of a cross-linking agent, 10 to 30 parts by weight of the thiol-modified epoxy intermediate, 10 to 20 parts by weight of an inorganic filler, 5 to 10 parts by weight of a pigment, and 2 to 5 parts by weight of an additive; and a curing agent including 60 to 80 parts by weight of a rubber-modified epoxy resin, 20 to 40 parts by weight of a polyol, 10 to 30 parts by weight of the thiol-modified epoxy intermediate, and 4 to 10 parts by weight of an additive, with respect to 100 parts by weight of an isocyanate mixture.

Abstract: A display device includes scan lines disposed in a first direction; data lines disposed in a second direction substantially perpendicular to the first direction; and unit pixel regions adjacent to the scan lines and the data lines, each unit pixel region including sub-pixels. A portion of an opening region of at least one of the sub-pixels overlaps a unit pixel region adjacent to a unit pixel region corresponding to the at least one of the sub-pixels, and a side of the opening region of the at least one of the sub-pixels extends in a third direction inclined with respect to each of the first direction and the second direction.

Abstract: The present invention is directed to a multiply convertible bicycle exercise apparatus, and intends to provide a multiply convertible bicycle exercise apparatus that allows the form of a bicycle exercise apparatus to be freely converted into various forms such as standing, sitting, dancing, and riding forms, so that various types of exercise can be enjoyed, various types of exercise apparatuses can be replaced with a single exercise apparatus, and the shape and size of the exercise apparatus can be adjusted to fit the physical size of a user even in a converted state, and that changes the location of the center of gravity of the bicycle exercise apparatus from the existing lower portion to the upper portion where a user's groin is located, so that the bicycle exercise apparatus is stable in connection with the center of gravity and is superior in terms of stability.

Abstract: A semiconductor device includes: a gate trench formed into a semiconductor substrate; a gate dielectric layer formed in the gate trench to cover an inside surface of the gate trench; and a gate electrode disposed over the gate dielectric layer to fill the gate trench, wherein the gate electrode includes: second crystal grains formed in the gate trench; and first crystal grains disposed between the second crystal grains and the gate dielectric layer and having a smaller crystal grain size than the second crystal grains.

Abstract: A method of an electronic device including an image sensor that acquires an optical signal corresponding to an object and a controller that controls the image sensor, is provided. The method includes identifying a mode for generating an image corresponding to the object by using the optical signal, determining a setting of at least one image attribute to be used for generating the image at least based on the mode, generating image data by using pixel data corresponding to the optical signal at least based on the setting, and displaying the image corresponding to the object through a display functionally connected to the electronic device at least based on the image data.

Abstract: A display device includes signal lines and pixels connected thereto. A first pixel includes a first transistor including a first gate electrode, a first channel region overlapping the first gate electrode, a first source region, and a second drain region facing the first source region, with the first channel region interposed between the first source region and the second drain region. A third transistor includes a third gate electrode, a third channel region overlapping the third gate electrode, a third drain region connected to the first gate electrode, and a third source region facing the third drain region with the third channel region interposed between the third source region and the third drain region. A shielding part overlaps a boundary between the third source region and the third channel region and does not overlap a boundary between the third drain region and the third channel region.

Abstract: An embodiment of the present invention provides a regeneration system of energy released from a working implement, which includes an actuator configured to move up and down the working implement, an accumulator configured to communicate with the actuator, and a controller configured to receive a pressure value of the actuator and a pressure value of the accumulator to control a discharge operation of the accumulator based on a pressure difference value between the actuator and the accumulator.

Abstract: A semiconductor device includes: a gate trench formed into a semiconductor substrate; a gate dielectric layer formed in the gate trench to cover an inside surface of the gate trench; and a gate electrode disposed over the gate dielectric layer to fill the gate trench, wherein the gate electrode includes: second crystal grains formed in the gate trench; and first crystal grains disposed between the second crystal grains and the gate dielectric layer and having a smaller crystal grain size than the second crystal grains.

Abstract: A bicycle exercise apparatus is disclosed. The bicycle exercise apparatus comprises a frame body installed to be supported by a floor of an installation site and having an exercise space in a center thereof, a plurality of spring members each having one end that is installed on the frame body and the other end that is extended to the exercise space, and an exercise saddle installed in such a way that a lateral side thereof is connected to the other end of the spring member, to be able to be moved by an elastic force of the spring member.

Abstract: The present invention relates to a lithium compound manufacturing method comprising the steps of heat treatment of lithium-containing ore; roasting the heat-treated ore with sulfuric acid to prepare an acid product; mixing the acid product with leaching water to prepare a leachate; purifying the leachate; and adding a phosphorus supply material and a basic material to the purified leachate to obtain a solid lithium phosphate.

Abstract: A method for fabricating a semiconductor device includes forming a trench in a substrate, forming a gate dielectric layer on a surface of the trench, forming a lower gate, which partially fills the trench, over the gate dielectric layer, forming a low work function layer over the lower gate, forming a spacer over the low work function layer, etching the low work function layer to be self-aligned with the spacer in order to form vertical gate on both upper edges of the lower gate, and forming an upper gate over the lower gate between inner sidewalls of the vertical gate.

Abstract: A semiconductor device includes at least one trench extending into a semiconductor substrate and lined with a gate dielectric layer; a dipole inducing layer covering a lowermost portion of the lined trench; a gate electrode covering the dipole inducing layer and filled in the lined trench; and doping regions, in the semiconductor substrate, separated from each other by the lined trench and separated from the dipole inducing layer.

Abstract: Disclosed is a semiconductor device for improving a gate induced drain leakage and a method for fabricating the same, and the method may include forming a trench in a substrate, lining a surface of the trench with an initial gate dielectric layer, forming a gate electrode to partially fill the lined trench, forming a sacrificial material spaced apart from a top surface of the gate electrode and to selectively cover a top corner of the lined trench, removing a part of the initial gate dielectric layer of the lined trench which is exposed by the sacrificial material in order to form an air gap, and forming a capping layer to cap a side surface of the air gap, over the gate electrode.