Abstract: A display device according to an embodiment includes a substrate having a display area, and a peripheral area outside the display area including a first peripheral area adjacent to the display area, a first bending area extending from the first peripheral area, and a second peripheral area extending from the first bending area, and overlapping the first peripheral area, a display member at the display area, and including a first display area, and a second display area around the first display area, and a plurality of align keys on the substrate, wherein the first peripheral area includes a flat peripheral area corresponding to an area between the first display area and the first bending area, and a second bending area between the second display area and an end of the substrate, and wherein the plurality of align keys include a first align key at the flat peripheral area, and a second align key at the second peripheral area.

Abstract: Disclosed is a semiconductor device for improving a gate induced drain leakage and a method for fabricating the same, and the semiconductor device includes a substrate, a first doped region and a second doped region formed to be spaced apart from each other by a trench in the substrate, a first gate dielectric layer over the trench, a lower gate over the first gate dielectric layer, an upper gate over the lower gate and having a smaller width than the lower gate, and a second gate dielectric layer between the upper gate and the first gate dielectric layer.

Abstract: Disclosed is a semiconductor device for improving a gate induced drain leakage and a method for fabricating the same, and the method for fabricating semiconductor device may include forming a trench in a substrate; forming a gate dielectric layer over the trench, embedding a first dipole inducing portion in the gate dielectric layer on a lower side of the trench, filling a lower gate over the first dipole inducing portion, embedding a second dipole inducing portion in the gate dielectric layer on an upper side of the trench and forming an upper gate over the lower gate.

Abstract: A display device includes a peripheral area around a display area, a plurality of pixels in the display area, and a plurality of signal lines connected to the pixels. The signal lines include a plurality of data lines connected to the pixels, a crack detection line connected to first data lines among the data lines through a first transistor, and a control line connected to a gate of the first transistor. The crack detection line is in the peripheral area.

Abstract: A display device includes signal lines and pixels connected thereto. A first pixel includes a first transistor including a first gate electrode, a first channel region overlapping the first gate electrode, a first source region, and a second drain region facing the first source region, with the first channel region interposed between the first source region and the second drain region. A third transistor includes a third gate electrode, a third channel region overlapping the third gate electrode, a third drain region connected to the first gate electrode, and a third source region facing the third drain region with the third channel region interposed between the third source region and the third drain region. A shielding part overlaps a boundary between the third source region and the third channel region and does not overlap a boundary between the third drain region and the third channel region.

Abstract: A display device may include a scan line, a data line, a power line, a substrate, a transistor, a light emitting device, a light shielding member, and a shielding layer. The scan line extends in a first direction and may transfer a scan signal. The data line extends in a second direction and may transfer a data signal. The power line is spaced from the data line and may transfer a driving voltage. The light emitting device is electrically connected to the transistor. The light shielding member is disposed between the substrate and the transistor. The shielding layer is electrically connected to the power line. The light shielding member includes a body member and a bridge member. The body member overlaps the transistor. The bridge member extends in the second direction from the body member and overlaps the shielding layer.

Abstract: The present invention relates to a sensor for capturing an image and a method for controlling the same. An electronic device according to various embodiments of the present invention comprises an image sensor and one or more processors. The one or more processors may be configured to receive a signal for capturing a moving image and to acquire a first plurality of image frames according to a first frame rate through the image sensor in response to the signal, the first image frames comprising a first image frame and a second image frame corresponding to an external object. The acquiring operation comprises an operation of generating a first part of a moving image according to a second frame rate, which is lower than the first frame rate, using some image frames among the first plurality of image frames.

Abstract: An electronic device is disclosed. The electronic device may comprise: an image sensor for acquiring raw image data corresponding to light of infrared band and visible light band, with respect to an external object; and a processor, wherein the processor is configured to: receive a request for acquiring the raw image data corresponding to the external object; on the basis of the request configured to be performed using a first function of the image sensor, generate an RGB image related to the external object by using first raw image data corresponding to the light of visible light band, obtained through the image sensor, and on the basis of the request configured to be performed using a second function of the image sensor, perform biometric authentication related to the external object by using second raw image data corresponding to the light of infrared band, obtained through the image sensor. In addition, various embodiments recognized through the specification are possible.

Abstract: A friction-type drive apparatus and a carousel comprising the same are disclosed. A friction-type drive apparatus, according to one embodiment, comprises: a motor; a drive pulley rotated by the motor; a belt connected to the drive pulley; a driven pulley rotating in accordance with the drive of the belt; a pressing unit contacting the inner surface of the belt; and an elastic unit for pressing the pressing unit toward the belt.

Abstract: A height adjustment device for adjusting a rotunda of a boarding bridge includes an external column fixed to the ground and having an inner space formed therein; an internal column which fixes a rotunda, and which is coupled so as to be slidable in the inner space such that rising and lowering is enabled; a driving unit which makes the internal column move vertically with respect to external column, and is disposed between the to the outside of the external column and the internal column; and a power unit for controlling the driving unit. The rotunda height adjustment device can be inspected, repaired for a defect thereof, and easily replaced.

Abstract: A display device includes a peripheral area around a display area, a plurality of pixels in the display area, and a plurality of signal lines connected to the pixels. The signal lines include a plurality of data lines connected to the pixels, a crack detection line connected to first data lines among the data lines through a first transistor, and a control line connected to a gate of the first transistor. The crack detection line is in the peripheral area.

Abstract: A display device includes signal lines and pixels connected thereto. A first pixel includes a first transistor including a first gate electrode, a first channel region overlapping the first gate electrode, a first source region, and a second drain region facing the first source region, with the first channel region interposed between the first source region and the second drain region. A third transistor includes a third gate electrode, a third channel region overlapping the third gate electrode, a third drain region connected to the first gate electrode, and a third source region facing the third drain region with the third channel region interposed between the third source region and the third drain region. A shielding part overlaps a boundary between the third source region and the third channel region and does not overlap a boundary between the third drain region and the third channel region.

Abstract: A semiconductor device includes at least one trench extending into a semiconductor substrate and lined with a gate dielectric layer; a dipole inducing layer covering a lowermost portion of the lined trench; a gate electrode covering the dipole inducing layer and filled in the lined trench; and doping regions, in the semiconductor substrate, separated from each other by the lined trench and separated from the dipole inducing layer.

Abstract: A semiconductor device includes: a gate trench formed into a semiconductor substrate; a gate dielectric layer formed in the gate trench to cover an inside surface of the gate trench; and a gate electrode disposed over the gate dielectric layer to fill the gate trench, wherein the gate electrode includes: second crystal grains formed in the gate trench; and first crystal grains disposed between the second crystal grains and the gate dielectric layer and having a smaller crystal grain size than the second crystal grains.

Abstract: A display device includes a scan driver supplying a scan signal to scan lines, an emission control driver supplying an emission control signal to emission control lines, and a data driver supplying data signals to data lines coupled to pixels. Each pixel includes a drive transistor controlling an amount of current from a first power supply to a second power supply via an organic light-emitting diode, and three other transistors. The third transistor is turned on by a scan signal on a prior scan line and receives a voltage of a third power supply. The first and second transistors are turned on by a scan signal on a present scan line. The fourth power supply is different from the second and third power supplies, and the first and third transistors receive voltages of their respective power supplies through different power lines on different layers.

Abstract: A display device according to an embodiment includes a substrate having a display area, and a peripheral area outside the display area including a first peripheral area adjacent to the display area, a first bending area extending from the first peripheral area, and a second peripheral area extending from the first bending area, and overlapping the first peripheral area, a display member at the display area, and including a first display area, and a second display area around the first display area, and a plurality of align keys on the substrate, wherein the first peripheral area includes a flat peripheral area corresponding to an area between the first display area and the first bending area, and a second bending area between the second display area and an end of the substrate, and wherein the plurality of align keys include a first align key at the flat peripheral area, and a second align key at the second peripheral area.

Abstract: According to the present invention, a height adjustment device for adjusting a rotunda of a boarding bridge is provided. The rotunda height adjustment device for a boarding bridge comprises: an external column fixed to the ground and having an inner space formed therein; an internal column which fixes a rotunda, and which is coupled so as to be slidable in the inner space such that rising and lowering is enabled; a driving unit which makes the internal column move vertically and translationally with respect to external column, and which is provided so as to be exposed to the outside of the external column and the internal column; and a power unit for controlling the driving unit. Therefore, the rotunda height adjustment device can be inspected, repaired for a defect thereof, and easily replaced.

Abstract: A semiconductor device includes: a gate trench formed into a semiconductor substrate; a gate dielectric layer formed in the gate trench to cover an inside surface of the gate trench; and a gate electrode disposed over the gate dielectric layer to fill the gate trench, wherein the gate electrode includes: second crystal grains formed in the gate trench; and first crystal grains disposed between the second crystal grains and the gate dielectric layer and having a smaller crystal grain size than the second crystal grains.

Abstract: A semiconductor device includes at least one trench extending into a semiconductor substrate and lined with a gate dielectric layer; a dipole inducing layer covering a lowermost portion of the lined trench; a gate electrode covering the dipole inducing layer and filled in the lined trench; and doping regions, in the semiconductor substrate, separated from each other by the lined trench and separated from the dipole inducing layer.

Abstract: A friction-type drive apparatus and a carousel comprising the same are disclosed. A friction-type drive apparatus, according to one embodiment, comprises: a motor; a drive pulley rotated by the motor; a belt connected to the drive pulley; a driven pulley rotating in accordance with the drive of the belt; a pressing unit contacting the inner surface of the belt; and an elastic unit for pressing the pressing unit toward the belt.