Abstract: A heat dissipation film for a display module, and a preparation method of a display device. The heat dissipation film comprises a composite structure layer and a removable protective film disposed on the composite structure layer. The composite structure layer has a first side surface and a second side surface disposed opposite to each other, and is provided with a preconfigured hole passing through the first side surface and the second side surface. The first side surface of the composite structure layer adheres to a side of the display module facing away from a display side. The protective film is attached to the second side surface of the composite structure layer. The protective film is provided with a shielding region covering the preconfigured hole. The shielding region and the rest of the protective film can all be independently torn off from the composite structure layer.

Abstract: The subject technology relates to recovering an object in a storage system. For instance, an object in a storage system is recovered by parsing object metadata associated with the object from a log in the storage system and storing the parsed object metadata in a storage space. In response to receiving a request to recover the object, the parsed object metadata from the storage space is retrieved. A linkage can be reestablished to a chunk corresponding to the object based on the retrieved object metadata. In this way, space reclamation is not impacted during recovery for the object, thereby increasing the space utilization. Furthermore, the time spent in the recovery process is reduced, and the success rate of object recovery is increased.

Abstract: A display substrate, including a plurality of gate lines and a plurality of data lines defining a plurality of pixel regions, where the plurality of pixel regions include a plurality of normal pixel regions and a plurality of redundant pixel regions at a periphery of the normal pixel regions; where each normal pixel region is provided with a first pixel electrode and a first transistor, each redundant pixel region is provided with a second pixel electrode and a second transistor, a gate of the first transistor is connected to a corresponding gate line, a source of the first transistor is connected to a corresponding data line, and a drain of the first transistor is connected to the first pixel electrode; and the second pixel electrode and the second transistor are insulated and spaced apart from each other.

Abstract: Provided is a recombinant yeast expressing germacrene A synthetase or a fusion protein thereof, wherein the fusion protein is germacrene A synthetase and farnesyl pyrophosphate synthase. The recombinant yeast improves the yield of germacrene A, and is suitable for the industrialized production of ?-elemene and/or germacrene A.

Abstract: This application provides an optical module, an electronic device, a communication system, and a related processing method. The optical module includes: a first processing unit, and a sampling unit, a sampled information storage unit, and a fault information storage unit that are separately electrically connected to the first processing unit. The sampling unit is configured to collect first sampled parameters, and store the first sampled parameters in the sampled information storage unit by using the first processing unit. The first processing unit is configured to: when identifying alarm information, read the first sampled parameters in the sampled information storage unit, determine, based on the first sampled parameters, fault type information corresponding to the alarm information, and store the fault type information in the fault information storage unit. The optical module does not need to transmit a large amount of sampled data to the electronic device.

Abstract: Provided are a circuit and method for measuring capacitance and capacitance-voltage characteristics of a microelectronic device. The circuit includes a pulse generation sub-circuit, a sub-circuit P, and a sub-circuit N. The pulse generation sub-circuit generates clock pulses CLK1 and CLK2 with non-overlapping active levels. The sub-circuit P includes a first current mirror, a first large capacitor, a first transmission gate, a second transmission gate, a first OR gate, a first AND gate, a first NOT gate, a second NOT gate, and a third NOT gate. The sub-circuit N includes a second current mirror, a second large capacitor, a third transmission gate, a fourth transmission gate, a second OR gate, a second AND gate, a fourth NOT gate, a fifth NOT gate, a sixth NOT gate, and a seventh NOT gate.

Abstract: A method of intelligent prediction of coal stress and different diameters pressure relief based on optimization neural network collects the drilling parameters while drilling the pressure-relief boreholes at one working face and to obtain the stress values using the accompanying boreholes of the pressure-relief boreholes to construct the prediction model; in this way, the prediction model is applied to predict the value of mining stress when drilling pressure-relief borehole in other working faces; according to the prediction results, the distribution law of mining stress is analyzed, and then the reaming position, length of reaming section and hole diameter of the pressure relief borehole are determined; the present invention monitors the pressure-relief borehole construction process of accompanying borehole parameters at the same time, monitoring the adjacent accompanying borehole corresponding to the depth of the drilling borehole coal stress value.

Abstract: Embodiments of this application provide a receive end apparatus. The receive end apparatus includes a trans-impedance amplifier TIA, a control apparatus, and a first storage module. The control apparatus is configured to receive a signal transmit identity of a first signal, and determine, based on a correspondence that is between a signal transmit identity and a gain and that is stored in the first storage module, a first gain corresponding to the signal transmit identity of the first signal, where the signal transmit identity indicates a transmit end apparatus of a signal or a channel for receiving the signal. The TIA is configured to obtain the first gain from the control apparatus, and after receiving the first signal, amplify the first signal by using the first gain.

Abstract: Embodiments of the disclosure include a method of forming a gate-all-around (GAA) contact structure on a semiconductor substrate. The method will include removing material from surfaces of a feature formed in a surface of a substrate that includes a plurality of features that each include a plurality of source/drain contact surfaces, selectively forming a reaction product material over a surface of each of the plurality of source/drain contact surfaces, heating the substrate to a first temperature to remove the reaction product material from the surface of each of the plurality of contacts, selectively forming a first metal layer on the surface of each of the plurality of contacts, selectively forming a second metal layer on the first metal layer, and filling the feature with a conductor material, wherein the conductor material comprises tungsten (W) or molybdenum (Mo).

Abstract: The disclosure relates to a micro gunsight, a small laser, a fine-tuning spring, a laser sight device inner core, a reset pin and a laser sight device. which includes a mounting slot that is matched with the gun card track. The mounting slot is composed of a fixed rail and a movable rail. The mounting slot is provided with a gunsight body, and inside the gunsight body is provided with a laser fine-tuning seat. A dual-light laser is installed inside the laser fine-tuning seat, and a fine-tuning mechanism is installed in the laser fine-tuning seat. There are multiple adapters at the bottom of the gunsight body, which are suitable for different Picatinny rails, making the installation position closer to the trigger guard, convenient for users to operate, and avoiding the problem of easy loosening of the front and rear positions of the sight device.

Abstract: A method includes: performing target detection on a current image to obtain detection information of a plurality of detected targets; obtaining position prediction information of each of a plurality of tracked targets and a number of times of tracking losses of targets from tracking information of each of the tracked targets, and determining a first matching threshold for each of the tracked targets according to the number of times of tracking losses of targets; calculating a motion matching degree between each of the tracked targets and each of the detected targets according to the position detection information and the position prediction information; for each of the tracked targets, obtaining a motion matching result according to the motion matching degree and the first matching threshold corresponding to the tracked target; and matching the detected targets and the tracked targets according to the motion matching results to obtain a tracking result.

Abstract: A light-emitting module and a display device are provided. The light-emitting module includes a backlight module and a first circuit board electrically connected to the backlight module. The first circuit board includes a first surface and at least one first electrical connection terminal on the first surface; the backlight module includes a second circuit board, the second circuit board includes at least one second electrical connection terminal, and the at least one first electrical connection terminal and the at least one second electrical connection terminal are electrically connected on the first surface to form an electrical connection region; the light-emitting module further includes a fixing adhesive film; the fixing adhesive film includes a first light-transmitting region; and the light-emitting module at least includes a first state, the electrical connection region is visible through the first light-transmitting region in the first state.

Abstract: The embodiments of the present application provide a multipath interference detection method and apparatus, and an optical module and a communication device. The method comprises: receiving a first signal; and performing detection on a frequency in the first signal, wherein if a first optical module detects, from the first signal, only a first frequency corresponding to first information, it is determined that multipath interference is not detected, and/or if the first optical module detects, from the first signal, at least a second frequency corresponding to second information, it is determined that multipath interference is detected, the first information being service information sent by a second optical module, and the second information being service information sent by the first optical module.

Abstract: Some embodiments include an assembly having conductive structures distributed along a level within a memory array region and another region proximate the memory array region. The conductive structures include a first stack over a metal-containing region. A semiconductor material is within the first stack. A second stack is over the conductive structures, and includes alternating conductive tiers and insulative tiers. Cell-material-pillars are within the memory array region. The cell-material-pillars include channel material. The semiconductor material directly contacts the channel material. Conductive post structures are within the other region. Some of the conductive post structures are dummy structures and have bottom surfaces which are entirely along an insulative oxide material. Others of the conductive post structures are live posts electrically coupled with CMOS circuitry. Some embodiments include methods of forming assemblies.

Abstract: Embodiments include a method of forming a contact structure on a semiconductor substrate. The method including selectively depositing a metal silicide layer over a contact formed within a cavity of a substrate and a bottom surface of the cavity using a selective deposition process, including forming a residual layer on a surface of a dielectric layer forming sidewalls of the cavity, wherein a thickness of the metal silicide layer deposited over the contact is greater than a thickness of the residual layer, removing at least a portion of the residual layer formed on the dielectric layer using an etching process that comprises exposing the metal selectively deposited layer to a metal halide containing precursor, and selectively depositing a metal fill over the metal silicide layer remaining over the contact after removing the at least the portion of the residual layer using a selective metal fill process.

Abstract: Embodiments include a method of forming a contact structure on a semiconductor substrate. The method including selectively depositing a metal silicide layer over a contact formed within a cavity of a substrate and a bottom surface of the cavity using a selective deposition process, including forming a residual layer on a surface of a dielectric layer forming sidewalls of the cavity, wherein a thickness of the metal silicide layer deposited over the contact is greater than a thickness of the residual layer, removing at least a portion of the residual layer formed on the dielectric layer using an etching process that comprises exposing the metal selectively deposited layer to a metal halide containing precursor, and selectively depositing a metal fill over the metal silicide layer remaining over the contact after removing the at least the portion of the residual layer using a selective metal fill process.

Abstract: A display substrate, including: a base substrate; a plurality of gate lines and a plurality of data lines that intersect to surround a plurality of pixels; wherein each pixel includes a first thin film transistor, a second thin film transistor and a pixel electrode. A first electrode of the first thin film transistor is electrically connected to a pixel conductive layer of the pixel electrode, a second electrode of the first thin film transistor is electrically connected to a first electrode of the second thin film transistor, and a second electrode of the second thin film transistor is electrically connected to the data line. An orthographic projection of a combination of the second electrode of the first thin film transistor and the first electrode of the second thin film transistor on the base substrate at least partially overlaps with an orthographic projection of the pixel conductive layer on the base substrate.

Abstract: The present disclosure relates to a precision seeding apparatus with recesses on a caterpillar for arranging and distributing seeds against bottoms of seed furrows. The apparatus includes a frame; the frame is provided with a seed box with a seed distribution opening; a caterpillar for transporting seeds capable of being connected with a drive mechanism is arranged in the seed box; a lower part of the caterpillar for transporting seeds corresponds to the position of the seed distribution opening; the caterpillar is provided with at least one column of recesses in a lengthwise direction of the caterpillar; each group of recesses is connected through a seed unloading ditch; the seed unloading ditch is formed into a ring in a lengthwise direction of the caterpillar for transporting seeds; a lower part of the caterpillar for transporting seeds is provided with a comb sheet.

Abstract: The present disclosure provides an information transmission method, an information transmission device, a communication device and a readable storage medium. The information transmission method includes: obtaining OAM information from an optical network; encapsulating the obtained OAM information to form an OAM frame, the OAM frame including N data frames each having a frame length of L, N varying along with a volume of the OAM information, L being a constant value regardless of the volume of the OAM information; and transmitting the OAM frame. The OAM information is transmitted in a length-constant frame, so it is able to facilitate encoding and decoding of a message, simplifying the processing and reduce the time consumption, and facilitate the extension in accordance with a message content and ensure the extendibility, thereby to solve such problems as complicated processing, being time-consuming, and poor extendibility in the conventional OAM information transmission scheme.

Abstract: A graphene quantum dots-gadolinium ion chelate (Gd@GQDs) nanomaterial with hydrophilic groups on the surface has a preparation method that includes: preparing graphene oxide by using a Hummers method; subsequently, subjecting the graphene oxide to heating, oxidation, and purification to obtain pure graphene quantum dots; and finally, chelating the graphene quantum dots with Gd3+ to form stable Gd@GQDs. The Gd@GQDs is easily dispersed in water, phosphate buffered solution (PBS), biological medium and other aqueous system, has good biocompatibility and low cytotoxicity, shows an excellent T1-weighted contrast performance in a 1.5-Tesla magnetic resonance testing system, and has a relaxation rate r1 as high as 72 mM?1s?1, the value of r1 being 20 times higher than that of the current commercial T1-weighted magnetic resonance imaging contrast agent Gd-DTPA.