Abstract: The embodiments of the present application provide a multipath interference detection method and apparatus, and an optical module and a communication device. The method comprises: receiving a first signal; and performing detection on a frequency in the first signal, wherein if a first optical module detects, from the first signal, only a first frequency corresponding to first information, it is determined that multipath interference is not detected, and/or if the first optical module detects, from the first signal, at least a second frequency corresponding to second information, it is determined that multipath interference is detected, the first information being service information sent by a second optical module, and the second information being service information sent by the first optical module.

Abstract: Some embodiments include an assembly having conductive structures distributed along a level within a memory array region and another region proximate the memory array region. The conductive structures include a first stack over a metal-containing region. A semiconductor material is within the first stack. A second stack is over the conductive structures, and includes alternating conductive tiers and insulative tiers. Cell-material-pillars are within the memory array region. The cell-material-pillars include channel material. The semiconductor material directly contacts the channel material. Conductive post structures are within the other region. Some of the conductive post structures are dummy structures and have bottom surfaces which are entirely along an insulative oxide material. Others of the conductive post structures are live posts electrically coupled with CMOS circuitry. Some embodiments include methods of forming assemblies.

Abstract: Embodiments include a method of forming a contact structure on a semiconductor substrate. The method including selectively depositing a metal silicide layer over a contact formed within a cavity of a substrate and a bottom surface of the cavity using a selective deposition process, including forming a residual layer on a surface of a dielectric layer forming sidewalls of the cavity, wherein a thickness of the metal silicide layer deposited over the contact is greater than a thickness of the residual layer, removing at least a portion of the residual layer formed on the dielectric layer using an etching process that comprises exposing the metal selectively deposited layer to a metal halide containing precursor, and selectively depositing a metal fill over the metal silicide layer remaining over the contact after removing the at least the portion of the residual layer using a selective metal fill process.

Abstract: Embodiments include a method of forming a contact structure on a semiconductor substrate. The method including selectively depositing a metal silicide layer over a contact formed within a cavity of a substrate and a bottom surface of the cavity using a selective deposition process, including forming a residual layer on a surface of a dielectric layer forming sidewalls of the cavity, wherein a thickness of the metal silicide layer deposited over the contact is greater than a thickness of the residual layer, removing at least a portion of the residual layer formed on the dielectric layer using an etching process that comprises exposing the metal selectively deposited layer to a metal halide containing precursor, and selectively depositing a metal fill over the metal silicide layer remaining over the contact after removing the at least the portion of the residual layer using a selective metal fill process.

Abstract: A display substrate, including: a base substrate; a plurality of gate lines and a plurality of data lines that intersect to surround a plurality of pixels; wherein each pixel includes a first thin film transistor, a second thin film transistor and a pixel electrode. A first electrode of the first thin film transistor is electrically connected to a pixel conductive layer of the pixel electrode, a second electrode of the first thin film transistor is electrically connected to a first electrode of the second thin film transistor, and a second electrode of the second thin film transistor is electrically connected to the data line. An orthographic projection of a combination of the second electrode of the first thin film transistor and the first electrode of the second thin film transistor on the base substrate at least partially overlaps with an orthographic projection of the pixel conductive layer on the base substrate.

Abstract: The present disclosure relates to a precision seeding apparatus with recesses on a caterpillar for arranging and distributing seeds against bottoms of seed furrows. The apparatus includes a frame; the frame is provided with a seed box with a seed distribution opening; a caterpillar for transporting seeds capable of being connected with a drive mechanism is arranged in the seed box; a lower part of the caterpillar for transporting seeds corresponds to the position of the seed distribution opening; the caterpillar is provided with at least one column of recesses in a lengthwise direction of the caterpillar; each group of recesses is connected through a seed unloading ditch; the seed unloading ditch is formed into a ring in a lengthwise direction of the caterpillar for transporting seeds; a lower part of the caterpillar for transporting seeds is provided with a comb sheet.

Abstract: The present disclosure provides an information transmission method, an information transmission device, a communication device and a readable storage medium. The information transmission method includes: obtaining OAM information from an optical network; encapsulating the obtained OAM information to form an OAM frame, the OAM frame including N data frames each having a frame length of L, N varying along with a volume of the OAM information, L being a constant value regardless of the volume of the OAM information; and transmitting the OAM frame. The OAM information is transmitted in a length-constant frame, so it is able to facilitate encoding and decoding of a message, simplifying the processing and reduce the time consumption, and facilitate the extension in accordance with a message content and ensure the extendibility, thereby to solve such problems as complicated processing, being time-consuming, and poor extendibility in the conventional OAM information transmission scheme.

Abstract: A graphene quantum dots-gadolinium ion chelate (Gd@GQDs) nanomaterial with hydrophilic groups on the surface has a preparation method that includes: preparing graphene oxide by using a Hummers method; subsequently, subjecting the graphene oxide to heating, oxidation, and purification to obtain pure graphene quantum dots; and finally, chelating the graphene quantum dots with Gd3+ to form stable Gd@GQDs. The Gd@GQDs is easily dispersed in water, phosphate buffered solution (PBS), biological medium and other aqueous system, has good biocompatibility and low cytotoxicity, shows an excellent T1-weighted contrast performance in a 1.5-Tesla magnetic resonance testing system, and has a relaxation rate r1 as high as 72 mM?1s?1, the value of r1 being 20 times higher than that of the current commercial T1-weighted magnetic resonance imaging contrast agent Gd-DTPA.

Abstract: A sight system based on a combination of infrared imaging, low-illumination imaging, and an LED sight light dot, comprising an LED graphics chip (20), a lens (3), a beam splitter (30), a display screen (31), a thermal imaging core assembly (13), a low-light night vision camera module (48), and a main control board (51). The thermal imaging core assembly (13) is electrically connected to the main control board (51), the low-light night vision camera module (48) is electrically connected to the main control board (51), the thermal imaging core assembly (13) and the low-light night vision camera module (48) are both electrically connected to the display screen (31), the main control board (51) is electrically connected to the LED graphics chip (20) and the display screen (31), separately, and light emitted from the LED graphics chip (20) and the display screen (31) is incident on the lens (3) after passing through the beam splitter (30).

Abstract: A method and system for intelligent plan optimization. The method may include: obtaining a sample scan image, one or more sample contour images, and sample dose data by resampling a scan image, a contour image, and dose data at a same resolution; obtaining a weighted image by the one or more sample contour images; obtaining a sample weighted image by performing a dimensionality reduction on the weighted image; obtaining a trained regression model by performing a regression training on an initial regression model based on the sample scan image, the contour image of the sample target region, the sample weighted image, and the sample dose data corresponding to the sample scan image; and obtaining a dose prediction result by inputting a to-be-tested scan image, a to-be-tested contour image of the target region, and a to-be-tested weighted image after the dimensionality reduction into the trained regression model.

Abstract: A contribution identification method for noise at a boundary of an urban substation in the present disclosure includes the following steps: describing site elements and surrounding environmental elements of an urban substation; measuring and recording a background noise value at each boundary of the urban substation; determining an orientation of a specific sound source of the urban substation, and setting a corresponding measurement point at each boundary of the urban substation; obtaining a spectrum of each specific sound source; analyzing a contribution of each intra-substation sound source of the urban substation to noise at the boundary of the substation; analyzing a noise level of each sound source measurement point in the urban substation; recording measured data during noise measurement, and correcting a noise measurement result; and generating a test report.

Abstract: A pin connector and a display panel are provided in the present application. The pin connector includes a plurality of pins arranged along a first direction, wherein the pins include a first pin for transmitting a first voltage, a second pin for transmitting a second voltage, and the first voltage is lower than the second voltage, wherein in the first direction, a space between the first pin and the second pin is not smaller than a size of three of the pins.

Abstract: Provided are a method and device employing a smart contract to realize identity-based key management. The method comprises: running a smart contract, and executing a key management process, wherein the key management process comprises: when a key of a target user requires an update and the target user is not a supervised user, generating a master public key and a master private key pertaining to the target user; acquiring, from a blockchain, identity information of the target user; generating a first target private key according to the master public key and the master private key pertaining to the target user and the identity information of the target user; and replacing a current private key of the target user with the first target private key.

Abstract: A wavelength division multiplexing structure comprises a first wavelength division multiplexer and a second wavelength division multiplexer, each comprises N filtering units, a branch side interface connected to each filtering units, and a line side interface, N being a positive integer; each filtering unit corresponds to one central wavelength; the line side interface of the first wavelength division multiplexer and that of the second wavelength division multiplexer are connected by an optical fiber; the N filtering units are divided into multiple filtering unit groups, and the multiple filtering unit groups are cascaded in series or cascaded in a series-parallel combination; filter units in each filtering unit group are cascaded in series; and a cascade mode and/or cascade position corresponding to each filter unit in the first wavelength division multiplexer and the second wavelength division multiplexer is at least related to the center wavelengths corresponding to the filter unit.

Abstract: Embodiments of the present disclosure provide a method, apparatus, electronic device and storage medium for storing data. After target data is obtained, a first data feature of the target data is extracted, the first data feature representing a data volume of the target data; the target shard number is obtained based on the first data feature, the target shard number representing the number of storage units for storing target data; a corresponding storage engine is obtained based on the target shard number, and the target data is stored in the storage engines in shards. The matched target shard number is obtained based on the first data feature of the target data, and a corresponding storage engine for storage is obtained based on the target shard number.

Abstract: A method for fault location comprises at least one of: sending, by a second optical module, a configuration message, to a first optical module, receiving, by the second optical module, a response message from the first optical module, and performing fault location according to the response message for the configuration message, wherein the response message is a response message sent to the second optical module to confirm a loopback configuration is successful, after the first optical module receives the configuration message from the second optical module and the first optical module configures the loopback configuration; or sending a data stream to a first optical module after a second optical module receives a response message from the first optical module, receiving, by the second optical module, a data stream returned from the first optical module, and performing fault location according to the data stream returned, wherein the response message is a response message sent to the second optical module to c

Abstract: Some embodiments include an assembly having conductive structures distributed along a level within a memory array region and another region proximate the memory array region. The conductive structures include a first stack over a metal-containing region. A semiconductor material is within the first stack. A second stack is over the conductive structures, and includes alternating conductive tiers and insulative tiers. Cell-material-pillars are within the memory array region. The cell-material-pillars include channel material. The semiconductor material directly contacts the channel material. Conductive post structures are within the other region. Some of the conductive post structures are dummy structures and have bottom surfaces which are entirely along an insulative oxide material. Others of the conductive post structures are live posts electrically coupled with CMOS circuitry. Some embodiments include methods of forming assemblies.

Abstract: A display substrate is provided, including: a base (1); and a plurality of pixel units (10) located on the base (1) and arranged in an array, where the display substrate further includes a plurality of data lines (25), and for each of the plurality of data lines (25), the data line (25) extends along a column direction and is located between adjacent first pixel unit (10A) and second pixel unit (10B) in a row direction, the data line (25) is arranged in a different layer from a first pixel electrode (40A) of the first pixel unit (10A) and a second pixel electrode (40B) of the second pixel unit (10B), and the data line (25) includes a first branch line (252) and a second branch line (253) that are connected in parallel and extend in the column direction; an orthographic projection of the first branch line (252) on the base (1) at least partially overlaps with an orthographic projection of the first pixel electrode (40A) on the base (1); an orthographic projection of the second branch line (253) on the base (1)

Abstract: The present disclosure relates to a device and method for recovering arsenic and gallium. A closed furnace body is in communication with a vacuuming pipe, and the vacuuming pipe is connected to a vacuuming mechanism. The closed furnace body includes a first furnace body, a second furnace body and a third furnace body. A first heating mechanism and a graphite crucible are arranged inside the first furnace body, the first heating mechanism being used for heating the graphite crucible. A first collection cylinder is in communication with a second collection cylinder. The device for recovering arsenic and gallium of the present disclosure is arranged with a structure for realizing directional condensation of gallium arsenide clusters and arsenic vapor, respectively, to realize high-purity recovery of arsenic and gallium.