Abstract: A semiconductor device includes a first lower line and a second lower line on a substrate, the first and second lower lines extending in a first direction, being adjacent to each other, and being spaced apart along a second direction, orthogonal the first direction, an airgap between the first and second lower lines and spaced therefrom along the second direction, a first insulating spacer on a side wall of the first lower line facing the second lower line, wherein a distance from the first airgap to the first lower line along the second direction is equal to or greater than an overlay specification of a design rule of the semiconductor device, and a second insulating spacer between the airgap and the second lower line.

Abstract: A semiconductor device is provided. The semiconductor includes a substrate having a first conductivity type; a well region having a second conductivity type in the substrate; an impurity implantation region having the first conductivity type in the well region; an element separation pattern in the substrate; a first fin pattern defined by the element separation pattern in the impurity implantation region; a second fin pattern defined by the element separation pattern in the well region; and a third fin pattern defined by the element separation pattern in the substrate, wherein the first fin pattern is a single fin, and an entirety of a lower boundary of the impurity implantation region is in contact with the well region.

Abstract: An atomic layer depositing apparatus includes: a gas supply assembly configured to supply a source gas, a reaction gas, and a purge gas; and a substrate transfer module disposed on a lower side of the gas supply assembly, configured to move linearly, and having an upper side on which the substrate is seated. The gas supply assembly includes: a purge gas supply module connected to a purge gas supply line in which the purge gas flows, a reaction gas supply module connected to a reaction gas supply line in which the reaction gas flows, a source gas supply module configured to selectively communicate with any one of the purge gas supply line and a source gas supply line in which the source gas flows, a pumping module disposed among the purge gas supply module, the reaction gas supply module, and the source gas supply module.

Abstract: The present disclosure relates to a positive electrode for an all-solid-state battery, comprising: a positive electrode active material; a perfluorinated ionomer comprising lithium substituted sulfonate; a solid electrolyte; and conductive carbon, and an all-solid-state battery comprising the same.

Abstract: Provided is a surveillance planning device configured to generate a checklist with respect to a region based on spatial information and object information of the region, obtain device installation condition information based on a user response to the checklist, and recommend, to a user, a list of devices to be installed in the region and an installation location of the devices based on the spatial information, the object information, and the device installation condition information.

Abstract: A video processing system including: at least one camera configured to obtain video data; a display interface; and a video analyzer including a memory storing instructions, and a processor configured to execute the instructions to: receive a video data from at least one camera; identify a plurality of video frames in which events occur from the received video data; generate a plurality of thumbnail images respectively representing the plurality of video frames; display a timeline interface indicating respective times of the events via a plurality of markers; and provide the plurality of thumbnail images in a thumbnail area adjacent to the timeline interface respectively corresponding with the plurality of markers, where left ends of the plurality of markers indicate start times of the events, and left ends of the plurality of thumbnail images coincide with the left ends of the plurality of markers.

Abstract: The present disclosure relates to an electrolyte for a lithium-sulfur battery comprising: a base electrolyte comprising a lithium salt and an organic solvent; and an electrolyte additive, wherein the electrolyte additive comprises an isocyanate functional group (—N?C?O).

Abstract: The present invention relates to: a cross-linking agent for a quasi-solid electrolyte, the agent being a polyester derivative comprising boron at the center thereof; a quasi-solid electrolyte using the cross-linking agent for a quasi-solid electrolyte; and a secondary battery using same.

Abstract: One aspect of the present disclosure provides a method for automatically removing a background sound source of audio data of a video, including separating the audio data including at least one sound source component into a first component related to a human voice and a second component related to sounds other than the human voice using a first separation model, separating the first component into a vocal component and a speech component using a second separation model, separating the second component into a music component and a noise component using a third separation model, and generating an audio data with the background sound source for the audio data of the video removed by synthesizing the speech component and the noise component.

Abstract: Disclosed is a wafer-level chip-size package type semiconductor package having a plurality of terminals, wherein the semiconductor package has an elongated rectangular planar shape, the plurality of terminals is configured with two column arranged in the short-side direction of the semiconductor package, and each terminal comprises a circular body part and a protruding part extending outward from the body part.

Abstract: The present disclosure relates to an active heat dissipation apparatus and a method of manufacturing the same, and the active heat dissipation apparatus includes a thermal conduction panel body having a refrigerant flow space configured to provide a space in which gas-liquid circulation is performed so that a refrigerant dissipates heat while changing phases in a closed space having an interior filled with the refrigerant, in which the refrigerant flow space includes a first refrigerant flow path that is a vaporization zone in which the thermal conduction panel body is supplied with heat from a heat generation element that is a heat dissipation target, and a second refrigerant flow path configured to serve as a route through which a liquid refrigerant in the refrigerant, which is condensed into a liquid state from a gaseous state, flows toward the first refrigerant flow path by surface tension or gravity.

Abstract: A semiconductor device includes a substrate that includes a first region and a second region, a first active pattern on the first region, a first gate structure that intersects the first active pattern, a first epitaxial pattern connected to the first active pattern and includes n-type impurities, a first source/drain contact that penetrates an upper surface of the first epitaxial pattern and is connected to the first epitaxial pattern, a second active pattern on the second region, a second gate structure that intersects the second active pattern, a second epitaxial pattern connected to the second active pattern and includes p-type impurities, and a second source/drain contact that penetrates an upper surface of the second epitaxial pattern and is connected to the second epitaxial pattern. A lower surface of the first source/drain contact is lower than a lower surface of the second source/drain contact.

Abstract: Provided is a washing machine including: a cabinet including a plurality of side frames, a back frame, a top frame and a bottom frame; a front frame that is disposed in front of the cabinet and includes an internal laundry port through which laundry is put into a rotating tub, and a front cover that is disposed in front of the front frame, extends from the top frame to the bottom frame, includes an external laundry port corresponding to the internal laundry port and is integrally formed. Thus, no line is formed in a front side of the washing machine so that the exterior of the washing machine can be enhanced.

Abstract: The present disclosure aims at providing a gel polymer electrolyte which has a great effect of inhibiting leakage of an organic solvent by confining the organic solvent in a three-dimensional polymer network and has oxidation stability, flame retardancy, thermal stability, and excellent lithium ion conductivity. In order to achieve the above object, the present disclosure provides a gel polymer electrolyte including a cross-linked polymer having a thiol-ene structure, wherein the thiol-ene structure is formed by a click reaction of a thiol group of a thiol compound containing at least four reactive thiol groups per molecule and an acrylic group of a fluorinated polyether diacrylate.

Abstract: A semiconductor device including a substrate, a first and second active pattern extending in a first horizontal direction on the substrate, the second active pattern apart from the first active pattern in the first horizontal direction, first nanosheets apart from each other in a vertical direction on the first active pattern, second nanosheets apart from each other in the vertical direction on the first and second active patterns, a gate electrode extending in a second horizontal direction different from the first horizontal direction on the first active pattern and surrounding the first nanosheets, a source/drain region between the first and second nanosheets, an active cut penetrating the second nanosheets in the vertical direction, extending to the substrate, and separating the first and second active patterns, and a sacrificial layer between the source/drain region and the active cut, in contact with the active cut, and including silicon germanium may be provided.

Abstract: An embodiment composition for solid electrolyte membranes of all-solid-state batteries includes a sulfide-based solid electrolyte and a cross-linking agent including two or more acrylate functionalities. An embodiment method of manufacturing a solid electrolyte membrane for an all-solid-state battery includes forming a composition including a sulfide-based solid electrolyte and a cross-linking agent including two or more acrylate functionalities and cross-linking the composition.

Abstract: A selector according to an embodiment of the present disclosure includes a first electrode; a second electrode disposed opposite to the first electrode; an ion supply layer disposed between the first electrode and the second electrode to be on the side of the first electrode and doped with a metal, wherein the doped metal diffuses toward the second electrode; a switching layer disposed between the first electrode and the second electrode to be on the side of the second electrode, wherein the doped metal diffuses from the ion supply layer into the switching layer so that metal concentration distribution inside the switching layer is changed to generate metal filaments; and a diffusion control layer inserted between the ion supply layer and the switching layer, wherein the diffusion control layer serves to adjust electrical characteristics related to the generated metal filaments as the amount of the diffusing metal is adjusted in proportion to a thickness of the diffusion control layer.

Abstract: A semiconductor device includes channel layers on a substrate, the channel layers being spaced apart from each other, and having first side surfaces and second side surfaces opposing each other in a first direction, a gate electrode surrounding the channel layers and having a first end portion and a second end portion, opposing each other in the first direction, and a source/drain layer on a first side of the gate electrode and in contact with the channel layers, a portion of the source/drain layer protruding further than the first end portion of the gate electrode in the first direction, wherein a first distance from the first end portion of the gate electrode to the first side surfaces of the channel layers is shorter than a second distance from the second end portion of the gate electrode to the second side surfaces of the channel layers.

Abstract: A washing machine including a plurality of washers may include a fixing bracket coupled to a front of a first housing in which a first tub is disposed and a front of a second housing in which a second tub is disposed, to prevent the first housing and the second housing from being separated from each other.

Abstract: An integrated circuit device includes a first transistor having a first channel between a first source/drain, and a second transistor having a second channel between a second source/drain. The first transistor operates based on a first amount of current and the second transistor operates based on a second amount of current different from the first amount of current. The first and second channels have fixed channel widths. The fixed channel widths may be based on fins or nanowires included in the first and second transistors.