Abstract: A display device includes a substrate comprising an active area and a non-active area a first data conductive layer disposed on the substrate and including signal wires connected to pixels, a first insulating layer disposed on the first data conductive layer, a second data conductive layer disposed on the first insulating layer and including a connection wire connected to some of the signal wires and dummy wiring patterns disconnected the signal wires, a second insulating layer disposed on the second data conductive layer and a pixel electrode disposed on the second insulating layer. The dummy wiring patterns are separated from one another at a disconnection, the second insulating layer includes a second portion disposed on the disconnection and a third portion disposed on at least a portion of the connection wire, and thicknesses thereof are different from each other.

Abstract: A semiconductor device may include a first active fin, a second active fin and a gate structure. The first active fin may extend in a first direction on a substrate and may include a first straight line extension portion, a second straight line extension portion, and a bent portion between the first and second straight line extension portions. The second active fin may extend in the first direction on the substrate. The gate structure may extend in a second direction perpendicular to the first direction on the substrate. The gate structure may cross one of the first and second straight line extension portions of the first active fin and may cross the second active fin.

Abstract: Semiconductor devices include a first active pattern including a first lower pattern extending in a first direction and a first sheet pattern spaced apart from the first lower pattern; and a first gate electrode on the first lower pattern, the first gate electrode extending in a second direction different from the first direction and surrounding the first sheet pattern, wherein the first lower pattern includes a first sidewall and a second sidewall opposite to each other, each of the first sidewall of the first lower pattern and the second sidewall of the first lower pattern extends in the first direction, the first gate electrode overlaps the first sidewall of the first lower pattern in the second direction by a first depth, the first gate electrode overlaps the second sidewall of the first lower pattern in the second direction by a second depth, and the first depth is different from the second depth.

Abstract: An integrated circuit (IC) device includes: a fin-type active area protruding from a substrate and extending in a first horizontal direction; a first nanosheet disposed above an upper surface of the fin-type active area with a first separation space therebetween; a second nanosheet disposed above the first nanosheet with a second separation space therebetween; a gate line extending on the substrate in a second horizontal direction intersecting the first horizontal direction, at least a portion of the gate line being disposed in the second separation space; and a bottom insulation structure disposed in the first separation space.

Abstract: The present disclosure provides an image inpainting method and an image inpainting device. The present disclosure in at least one embodiment provides a method of inpainting an image area obscured by an object included in an image, including selecting one or more frames among input frames of the image, wherein each of the one or more frames is selected as a target frame including an inpainting area obscured by the object or as a reference frame including information on the inpainting area, and performing at least one of inter inpainting or intra inpainting depending on a number of frames selected as the reference frame.

Abstract: The present invention relates to a precursor composition for a polymer electrolyte including two types of crosslinking agents and a gel polymer electrolyte formed therefrom.

Abstract: The present invention relates to a polymer, an organic solar cell comprising the polymer, and a perovskite solar cell comprising the polymer. The polymer according to the present invention has excellent absorption ability for visible light and an energy level suitable for the use as an electron donor compound in a photo-active layer of the organic solar cell, thereby increasing the light conversion efficiency of the organic solar cell. In addition, the polymer according to the present invention has high hole mobility, and is used as a compound for a hole transport layer, and thus can improve efficiency and service life of the perovskite solar cell without an additive.

Abstract: A display device and a method of manufacturing the display device are provided. Embodiments of the display device include a substrate including a main portion and a plurality of protrusion patterns protruding outwardly from an edge of the main portion, a display layer on each of the protrusion patterns, a first insulating layer covering the display layer and a second insulating layer on the first insulating layer. Adjacent protrusion patterns are separated by a cutout portion and side surfaces of the adjacent protrusion patterns face each other. The first insulating layer includes adjacent first insulating layers on the adjacent protrusion patterns that face each other and are separated by the cutout portion. The second insulating layer is on a top surface of the first insulating layer on each of the protrusion patterns, and is not on a side surface of the display layer.

Abstract: A semiconductor device includes a first PMOS transistor, a first NMOS transistor, and a second NMOS transistor connected to an output node of the first PMOS and NMOS transistors. The first PMOS transistor includes first nanowires, first source and drain regions on opposite sides of each first nanowire, and a first gate completely surrounding each first nanowire. The first NMOS transistor includes second nanowires, second source and drain regions on opposite sides of each second nanowire, and a second gate extending from the first gate and completely surrounding each second nanowire. The second NMOS transistor includes third nanowires, third source and drain regions on opposite sides of each third nanowire, and a third gate, separated from the first and second gates, and completely surrounding each third nanowire. A number of third nanowires is greater than that of first nanowires. The first and second gates share respective first and second nanowires.

Abstract: A calibration method of an optical coherence tomography (OCT) device and a camera using the same target includes irradiating a shape measurement light to a calibration target, obtaining a surface shape image thereof by detecting light reflected by a surface of the calibration target using a shape measurement camera, and calibrating the surface shape image according to an actual shape of the calibration target; obtaining surface and internal three-dimensional images of the calibration target by scanning with a layer measurement light using the OCT measurement unit, extracting a surface shape image of the calibration target from the three-dimensional images, and calibrating the surface shape image according to the actual surface shape of the calibration target; and matching a calibration image obtained by the shape measurement camera and a surface calibration image obtained by the OCT measurement unit to be displayed at the same spatial coordinates.

Abstract: An integrated circuit (IC) device includes: a fin-type active area protruding from a substrate and extending in a first horizontal direction; a first nanosheet disposed above an upper surface of the fin-type active area with a first separation space therebetween; a second nanosheet disposed above the first nanosheet with a second separation space therebetween; a gate line extending on the substrate in a second horizontal direction intersecting the first horizontal direction, at least a portion of the gate line being disposed in the second separation space; and a bottom insulation structure disposed in the first separation space.

Abstract: Disclosed are a vehicle suspension spring device and a vehicle suspension system having the same. The vehicle suspension spring device includes a leaf spring unit comprising at least one leaf spring disposed in a lateral direction of a vehicle, a pair of first coupling parts provided at opposite ends of the leaf spring unit in a longitudinal direction and rotatably coupled to a pair of axles on which opposite wheels of the vehicle are mounted, and a pair of second coupling parts provided at two points between the opposite ends of the leaf spring unit in the longitudinal direction to be rotatably coupled to a subframe of the vehicle.

Abstract: A semiconductor device includes first to fourth active patterns extending in a horizontal first direction. The second active pattern is spaced apart from the first active pattern in the first direction. The third active pattern is spaced apart from the first active pattern in a horizontal second direction. The fourth active pattern is spaced apart from the third active pattern in the first direction. A field insulating layer surrounds a sidewall of each of the first to fourth active patterns. First to fourth pluralities of nanosheets are respectively disposed the first to fourth active patterns. A first gate electrode extends in the second direction, intersects each of the first and third active patterns, and surrounds the first and third pluralities of nanosheets. A second gate electrode extends in the second direction, intersects each of the second and fourth active patterns, and surrounds the second and fourth pluralities of nanosheets.

Abstract: The present disclosure relates to a composite for hydrogen storage formed through lithiation and a method of preparing the same.

Abstract: A semiconductor device includes an active pattern with a lower pattern and sheet patterns spaced apart from the lower pattern, a gate structure on the lower pattern and having a gate electrode and a gate insulating film that surround each of the sheet patterns, a gate capping pattern on the gate structure, a gate etching stop pattern between the gate capping pattern and the gate structure, a gate spacer along a sidewall of the gate capping pattern, a source/drain pattern on the gate structure, a gate contact through the gate capping pattern and connected to the gate electrode, upper surfaces of the gate contact and gate spacer being coplanar, and a source/drain contact on the source/drain pattern and connected to the source/drain pattern.

Abstract: Semiconductor devices include a first active pattern including a first lower pattern extending in a first direction and a first sheet pattern spaced apart from the first lower pattern; and a first gate electrode on the first lower pattern, the first gate electrode extending in a second direction different from the first direction and surrounding the first sheet pattern, wherein the first lower pattern includes a first sidewall and a second sidewall opposite to each other, each of the first sidewall of the first lower pattern and the second sidewall of the first lower pattern extends in the first direction, the first gate electrode overlaps the first sidewall of the first lower pattern in the second direction by a first depth, the first gate electrode overlaps the second sidewall of the first lower pattern in the second direction by a second depth, and the first depth is different from the second depth.

Abstract: A display device and a method of manufacturing the same are provided. The display device comprises a substrate having a base and a protruding pattern protruding from the base; a first planarization layer on the protruding pattern and comprising a first surface, a second surface, and side surfaces connecting the first surface and the second surface; and a dam structure on the first planarization layer and comprises a first sub-dam and a second sub-dam, wherein a first angle formed by the second surface of the first planarization layer and each side surface of the first planarization layer is in a range of 30 to 60 degrees.

Abstract: A display device includes a substrate comprising an active area and a non-active area a first data conductive layer disposed on the substrate and including signal wires connected to pixels, a first insulating layer disposed on the first data conductive layer, a second data conductive layer disposed on the first insulating layer and including a connection wire connected to some of the signal wires and dummy wiring patterns disconnected the signal wires, a second insulating layer disposed on the second data conductive layer and a pixel electrode disposed on the second insulating layer. The dummy wiring patterns are separated from one another at a disconnection, the second insulating layer includes a second portion disposed on the disconnection and a third portion disposed on at least a portion of the connection wire, and thicknesses thereof are different from each other.

Abstract: A network surveillance camera system includes a plurality of cameras configured to photograph a plurality of surveillance areas to acquire video information for the respective surveillance areas and transmit the acquired video information of each surveillance area to each channel, and a video receiving/search device connected to the plurality of cameras via a network and configured to receive the video information from the cameras in real time and search for the transmitted multi-channel video information, wherein the video receiving/search device includes a video search viewer configured to generate a thumbnail image and a metadata tag corresponding to an event of each channel based on video analysis information for each of the channels, display the generated thumbnail image and metadata tag, and search for the transmitted multi-channel video information.

Abstract: Disclosed are a polymer gel electrolyte composition, a polymer gel electrolyte prepared from the composition, and a lithium secondary battery including the electrolyte are proposed. The polymer gel electrolyte may be formed by thermal cross-linking of the polymer gel electrolyte composition including an ether-based organic solvent with excellent compatibility with a lithium metal anode, a nitrate capable of forming a stable film on an electrode surface, and an appropriate ratio of a cross-linking agent having two or more acrylate functional groups. Therefore, the polymer gel electrolyte can smoothly penetrate the anode to form an ion transport channel and improve oxidation stability through interaction between the polymer and the solvent thereof, thereby improving battery life.