Abstract: A thin film transistor and a manufacturing method thereof, a display substrate and a display device are provided. The method of manufacturing the thin film transistor comprises forming an active layer (4) having characteristics of crystal orientation of C-axis on a substrate (1) by using indium gallium zinc oxide (InGaO3(ZnO)m), where m?2. The active layer fabricated with InGaO3(ZnO)m has a good electron mobility, and the quality of the fabricated active layer is improved.

Abstract: The present application provides an array substrate, which is divided into a plurality of pixel units, wherein each pixel unit is provided therein with a light filtering structure, the light filtering structure includes a first light shielding part and a second light shielding part, the second light shielding part includes a second light shielding part body and a light transmitting hole penetrating through the second light shielding part body, a light transmitting gap exists between a inner boundary of an orthographic projection of the second light shielding part body on a layer in which the first light shielding part is provided and a boundary of the first light shielding part, a transparent light transmitting space is formed above the first light shielding part, and the light transmitting gap allows light with a predetermined wavelength to transmit therethrough.

Abstract: The present invention provides a thin film transistor, a fabricating method thereof, an array substrate and a display device. The fabricating method of the thin film transistor of the present invention comprises: forming an inducing layer film and an oxide active layer film in contact therewith on a substrate, the oxide active layer film being provided above or below the inducing layer film; and heating the substrate subjected to the above step, crystallizing the oxide active layer film through inducement of the inducing layer film to form a crystalline oxide active layer.

Abstract: A method for manufacturing a thin-film transistor (TFT), an array substrate and a display device are disclosed. The manufacturing method includes: forming a photoresist layer provided with a completely retained region, a partially-retained region and a completely removed region on a metal film by a half-tone mask process; forming a source/drain metal layer by etching the metal film under the cover of the photoresist layer; removing the photoresist layer in the partially-retained region; forming an active layer by patterning the semiconductor film; and removing residual photoresist layer.

Abstract: A method for fabricating an Organic Light-Emitting Diode (OLED) display panel is provided. The method includes arranging Thin-Film Transistor (TFT) devices on one side of a substrate and a function layer on the other side of the substrate to form a laminate including both the TFT devices and the function layer, attaching the laminate onto a loading platform such that the function layer included in the laminate faces towards the loading platform, and conducting a process on the laminate to form an organic electroluminescent material layer on surfaces of the TFT devices.

Abstract: Embodiments of the present disclosure provide a manufacturing method for a flexible device and a flexible display device. The manufacturing method for a flexible device comprises: step S1, forming an organosiloxane layer on a supporting substrate; step S2, forming a flexible substrate on the organosiloxane layer; step S3, forming a display device on the flexible substrate; step S4, performing an oxidation treatment on a surface of the organosiloxane layer that contacts the supporting substrate such that a silicon dioxide layer is formed between the organosiloxane layer and the supporting substrate; and step S5, peeling off the supporting substrate from the silicon dioxide layer.

Abstract: Embodiments of the present invention provide a thin film transistor, method for fabricating the thin film transistor and display apparatus. The method includes steps of: forming an active layer pattern which has a mobility greater than a predetermined threshold from an active layer material; and performing ion implantation on the active layer pattern. The energy of a compound bond formed from the implanted ions is greater than that of a compound bond formed from ions in the active layer material, thereby reducing the chance of vacancy formation and reducing the carrier concentration. Therefore, the mobility of the active layer surface is reduced, the leakage current is reduced, the threshold voltage is adjusted to shift toward positive direction and performance of the thin film transistor is improved.

Abstract: A thin film transistor (TFT), a manufacturing method thereof, a display substrate and a display device are disclosed. The TFT includes: a gate electrode; a gate insulating layer disposed on the gate electrode; a first active layer disposed on the gate insulating layer; a second active layer disposed on the first active layer, having a length smaller than that of the second active layer; a source electrode disposed on the first active layer, being contacted with a first side of the second active layer; and a drain electrode disposed on the first active layer, being contacted with a second side of the second active layer. Embodiments of the present invention can increase an ON-state current and meanwhile reduce an OFF leakage current in the TFT.

Abstract: A lens assembly for an optical imaging lens is disclosed, which includes a first lens, wherein the first lens has a negative power, a second lens, a third lens, a fourth lens, a fifth lens, and a sixth lens, wherein the sixth lens has a positive power, wherein the second lens and the third lens define a first cemented achromatic lens assembly, and the fourth lens and the fifth lens define a second cemented achromatic lens assembly, wherein the first lens, the first cemented achromatic lens assembly, the second cemented achromatic lens assembly and the sixth lens are orderly arranged along the direction from the object side to the image side.

Abstract: The present application discloses a light emitting diode comprising a plurality of sub-pixels comprising a first electrode layer, wherein the first electrode layer is a reflective electrode layer; a second electrode layer; a light emitting layer between the first electrode layer and the second electrode layer; a first microcavity tuning layer sandwiched by the first electrode layer and the light emitting layer within the plurality of sub-pixels; and a second microcavity tuning layer sandwiched by the first microcavity tuning layer and the light emitting layer within at least one of the plurality of sub-pixels, and the first microcavity tuning layer is sandwiched by the first electrode layer and the second microcavity tuning layer within the at least one of the plurality of sub-pixels.

Abstract: The present application discloses a method of fabricating an anti-reflective film, comprising forming a zinc oxynitride layer on a substrate; annealing the zinc oxynitride layer; and etching the surface of the zinc oxynitride layer with an etching solution to form a micro lenses layer comprising a plurality of micro lenses on surface.

Abstract: The invention provide a flexible substrate and manufacturing method thereof, flexible display panel and flexible display device, wherein the flexible substrate comprises a first film layer and a second film layer, and further comprises a first flexible layer and a second flexible layer; the first film layer and the second film layer are located between the first flexible layer and the second flexible layer; the first film layer and the first flexible layer are bonded with each other, and the second film layer and the second flexible layer are bonded with each other; when the flexible substrate bends towards a first side, the first film layer and the second film layer can contact each other and form electric connection as the first flexible layer and the second flexible layer bend; and when the flexible substrate bends towards a second side or does not bend, the first film layer and the second film layer can be separated from each other and disconnect the electric connection as the first flexible layer and the

Abstract: The present invention provides a color filter substrate and a manufacturing method thereof, an organic electroluminescent display panel and a display device. The color filter substrate of the present invention comprises a first base, and a plurality of color filters and black matrixes arranged on the first base, wherein two adjacent color filters are at least partially overlapped, and each black matrix is at least partially arranged at the overlapped position of the two adjacent color filters; and the color filter substrate further comprises a first adhesive layer for eliminating section differences between the adjacent color filters or between the color filters and the black matrixes, and the first adhesive layer is provided with scattering particles therein. The color filter substrate can be used in the organic electroluminescent display panel.

Abstract: The present invention provides an electrode and manufacturing method thereof, and an array substrate and manufacturing method thereof. The manufacturing method of the electrode comprises: forming a ZnON material layer on a metal electrode layer; etching the formed ZnON material layer to form a microlens structure layer; forming a transparent electrode layer on the microlens structure layer. In the present invention, due to use of the ZnON material as the material for forming the microlens structure layer, an alkaline or weakly acidic solution can be used at the time of forming microlens structures by etching, which can thereby prevent the metal electrode layer from erosion.

Abstract: An array substrate and a method for fabricating the same are disclosed. The method includes steps of providing a substrate (20), a first metal layer including patterns of gate electrodes (21, 24) of a first and second TFTs, an active layer (27) and a gate insulation layer (28) are formed on the substrate; forming an etch stop layer film and a photoresist sequentially on the substrate (20), and allowing the photoresist to form a first, second and third regions through gray-scale exposing and developing; forming a pattern of an etch stop layer (29), a connection via hole (30), and a contact via hole (31) respectively in the first, second and third regions through a patterning process; and forming source electrodes and drain electrodes (22, 23,25, 26) of the first and second TFTs. Photoresist of different thicknesses are disposed according to etch depths, thereby avoiding the over-etch of relatively shallow via holes.

Abstract: The present invention relates to an array substrate, a fabricating method thereof, and a display device. The array substrate comprises a thin film transistor, an auxiliary electrode which is arranged in a same layer as an active layer of the thin film transistor, and a transparent cathode which is electrically connected with the auxiliary electrode, wherein the active layer is an oxide semiconductor, and the auxiliary electrode is an electric conductor which is formed by performing a modification treatment on the oxide semiconductor. According to technical solutions of the present invention, the active layer and the auxiliary electrode are arranged in a same layer, a pattern of the active layer and the auxiliary electrode can be formed by a same etching process, and a separate process for forming the auxiliary electrode is not required, thus reducing the overall process time of the array substrate and saving the fabricating cost. (FIG.

Abstract: The present disclosure provides a color filter substrate, comprising a base substrate, and a color filter matrix, a black matrix and spacers formed in order on the base substrate, the color filter matrix being consisted of a plurality of red, green and blue photoresists. The red, green and blue photoresists are respectively and separately formed within corresponding pixel regions, and are overlapped with one another to form three-layer stacked structures within gap regions between adjacent pixel regions, and, the black matrix and the spacers are sequentially formed on the stacked structures within the pixel regions. The present disclosure further provides a method of manufacturing a color filter substrate, an organic light emitting display panel and a display device.

Abstract: The present invention provides a pixel unit including a thin film transistor and a pixel electrode, the thin film transistor includes a gate, a source and a drain, and the pixel electrode is electrically connected to the drain through a via hole. An upper end surface of the via hole is connected to the pixel electrode, and a lower end surface of the via hole is connected to the drain. The via hole is a step-shaped hole, and an area of the upper end surface of the via hole is larger than that of the lower end surface of the via hole. The present invention also provides a method of fabricating the pixel unit, an array substrate including the pixel unit, and a display device including the array substrate.

Abstract: The present invention discloses a display substrate and a manufacturing method thereof and a display device. The display substrate comprises a base substrate and color matrix patterns and photo spacers provided on the base substrate, edges of the adjacent color matrix patterns are overlapped, and the photo spacers are provided above the overlapped parts of the adjacent color matrix patterns. By adopting such a structure, the thickness of the photo spacers can be reduced, the purpose of increasing the cell gap of the display device is achieved while providing thinner photo spacers, and the cell gap of the display device is increased.

Abstract: A display device, an array substrate and a fabrication method thereof are provided. The array substrate comprises a data line and a gate line, the data line and the gate line intersect with each other to define a pixel region. The pixel region comprises a first thin film transistor and a pixel electrode. The fabrication method comprises: forming an active layer film and a source-drain metal layer on a substrate, and forming an active layer, a source electrode and a drain electrode of the first thin film transistor on the substrate by a single patterning process.