Abstract: A dual lumen cannula includes a first lumen having at least one aperture for removing a fluid from the interior of the heart right atrium, and a second lumen for delivering a fluid into the interior of the pulmonary artery or the heart left atrium. The second lumen includes a distal selectively curvable portion having a length of from about 4 cm to about 22 cm to position an end thereof within the interior of the pulmonary artery lumen or the human heart left atrium interior when a distal end of the first lumen is positioned within a right atrium of the human heart. The second lumen may also include a distal anchoring structure for preventing inadvertent withdrawal from a surgical site.

Abstract: A TFT, a TFT array substrate, a manufacturing method thereof and a display device are disclosed. A source of the TFT includes a first source portion (51). A drain of the TFT includes a first drain portion (52). The first source portion (51) and the first drain portion (52) are disposed in the same layer as an active layer and respectively at opposite sides of the active layer (5). The first source portion (51) and the first drain portion (52) are in direct contact to the active layer (5) respectively. The capacitance will not be generated between the first source/drain portion (51, 52) and the gate (2), because the first source/drain portion (51,52) and the gate (2) are disposed without overlapping with each other or with a small-area overlapping region. The breakdown of a gate insulation layer caused by too large voltage of the source/drain or too many charges accumulated on the source/drain can be also avoided.

Abstract: Embodiments of the present invention provide a thin film transistor, method for fabricating the thin film transistor and display apparatus. The method includes steps of: forming an active layer pattern which has a mobility greater than a predetermined threshold from an active layer material; and performing ion implantation on the active layer pattern. The energy of a compound bond formed from the implanted ions is greater than that of a compound bond formed from ions in the active layer material, thereby reducing the chance of vacancy formation and reducing the carrier concentration. Therefore, the mobility of the active layer surface is reduced, the leakage current is reduced, the threshold voltage is adjusted to shift toward positive direction and performance of the thin film transistor is improved.

Abstract: A color filter substrate, a manufacturing method thereof and a display device are provided. The color filter substrate includes: a transparent base (1); a color filter layer (2) disposed on the transparent base (1) and at least including a plurality of color filter units; a protective layer (3) disposed on the color filter layer (2); a plurality of auxiliary electrodes (4) disposed on the protective layer (3), with a position of each of the auxiliary electrodes (4) corresponding to a connecting position between two adjacent the color filter units; a black matrix (5) disposed on the auxiliary electrode (4) and partially covering the auxiliary electrode (7); a spacer (6) disposed on the black matrix (5); and a transparent electrode (7) disposed on the spacer (6) and electrically connected with the auxiliary electrode (4) in an area of the auxiliary electrode (4), not covered by the black matrix (5).

Abstract: A thin film transistor and a manufacturing method for the same, an array substrate, and a display device are disclosed. The thin film transistor comprises: a substrate (1) and a gate (2), a first gate insulating layer (3) and an active layer (4) which are disposed in order on the substrate, the first gate insulating layer (3) covers the gate (2), the active layer (4) covers the first gate insulating layer (3), and a material for the first gate insulating layer comprises aluminum oxide.

Abstract: A thin-film transistor (TFT), a preparation method thereof, an array substrate and a display device are disclosed. The TFT disclosed in the present invention includes a source electrode, a drain electrode, a semiconductor layer, a gate electrode and a gate insulating layer and further includes: a source conductive layer and a drain conductive layer which are disposed on the surface of the semiconductor layer and spaced from each other. The source conductive layer is connected with the source electrode; the drain conductive layer is connected with the drain electrode; and the minimum distance between the source conductive layer and the drain conductive layer is less than the minimum distance between the source electrode and the drain electrode. The TFT is applicable to a display device, in particular, to a LCD or OLED.

Abstract: Embodiments of the present invention relate to a pixel structure and a manufacturing method thereof. The pixel structure includes: a substrate; an organic light emitting layer, disposed on the substrate; and an organic light gathering layer, disposed on a light exiting side of the organic light emitting layer, wherein light emitted from the organic light emitting layer is incident on the organic light gathering layer which is configured to gather the light emitted from the organic light emitting layer.

Abstract: A thin film transistor (TFT) and manufacturing method thereof, an array substrate and a display device are provided. The thin film transistor comprises a substrate; an active layer formed on the substrate; a first conductive contact layer and a second conductive contact layer formed on the active layer; an etch-stop layer formed over the first contact layer and the second contact layer; and a source connected with the first contact layer, a drain connected with the second contact layer and a gate arranged between the source and the drain formed over the etch-stop layer. The TFT has a simple structure and better performance.

Abstract: The present disclosure relates to a driving apparatus, an OLED (Organic Light-Emitting Diode) panel, and a method for driving the OLED panel. The driving apparatus can be integrated on a substrate of pixel circuits and is capable of providing fast and stable current driving. The driving apparatus includes a switching module for selecting a voltage signal according to a received clock signal; a conversion module for converting the voltage signal into a current signal; and an output module for outputting the voltage signal or the converted current signal to drive a pixel circuit array, wherein the switching module is connected to the conversion module and the output module, and the conversion module is connected to the switching module and the output module.

Abstract: A pixel define layer (PDL) of an organic light-emitting diode (OLED) display panel, which comprises a first PDL (21) and a second PDL (22) overlapped on the first PDL. The first PDL (21) is a hydrophobic film layer provided with openings (210) corresponding to luminous regions of sub-pixel units; and the second PDL (22) is a hydrophilic film layer provided with openings (220) corresponding to the openings (210) of the first PDL. The PDL can avoid the mutual pollution of organic light-emitting materials in luminous regions of different colors in adjacent sub-pixel units in the preparation process.

Abstract: The present invention discloses a light-emitting display backplane, a display device and a manufacturing method of a pixel define layer. A light-emitting display backplane according to the present invention comprises: a substrate and a pixel define layer provided thereon, wherein said pixel define layer comprises: a first photosensitive resin layer, a first transparent define layer and a second transparent define layer sequentially provided on said substrate from bottom to top, each of the first photosensitive resin layer, the first define layer and the second define layer is provided with openings corresponding to respective pixels, and the openings in said second define layer are smaller than those in both said first define layer and said first photosensitive resin layer, so as to form luminescent material filling regions which are wider at bottom and narrower at top.

Abstract: Embodiments of the disclosed technology relate to a method for manufacturing a thin film transistor (TFT) with a polysilicon active layer comprising: depositing an amorphous silicon layer on a substrate, and patterning the amorphous silicon layer so as to form an active layer comprising a source region, a drain region and a channel region; depositing an inducing metal layer on the source region and the drain region; performing a first thermal treatment on the active layer provided with the inducing metal layer so that the active layer is crystallized under the effect of the inducing metal; doping the source region and the drain region with a first impurity for collecting the inducing metal; and performing a second thermal treatment on the doped active layer so that the first impurity absorbs the inducing metal remained in the channel region.

Abstract: The present invention provides a pixel unit including a thin film transistor and a pixel electrode, the thin film transistor includes a gate, a source and a drain, and the pixel electrode is electrically connected to the drain through a via hole. An upper end surface of the via hole is connected to the pixel electrode, and a lower end surface of the via hole is connected to the drain. The via hole is a step-shaped hole, and an area of the upper end surface of the via hole is larger than that of the lower end surface of the via hole. The present invention also provides a method of fabricating the pixel unit, an array substrate including the pixel unit, and a display device including the array substrate.

Abstract: Embodiments of the invention provide a thin film transistor and a manufacturing method thereof and a display device. The thin film transistor includes a gate electrode, a gate insulation layer, an active layer, an ohmic contact layer, a source electrode and a drain electrode, and the source electrode and the drain electrode are connected to the active layer by the ohmic contact layer. The ohmic contact layer is provided at a lateral side of the active layer and contacts the lateral side of the active layer.

Abstract: A blood oxygenator includes an integral pneumatic pump disposed substantially within a housing thereof, an inlet blood flow redirector, and an outflow blood collector. An atrium provided at an inlet of the oxygenator promotes even delivery of blood to the oxygenator. In use, the oxygenator provides an even dispersion of blood therethrough, establishing even perfusion and reducing areas of stagnant blood flow.

Abstract: Embodiments of the invention relate to an array substrate, a method for fabricating the same and a display device. The method for fabricating the array substrate includes: forming a pattern of an etch stop layer on an active layer and a gate insulation layer not covered by the active layer; forming a pattern of a source/drain electrode layer on the etch stop layer; forming a patterning of a color filter layer on the source/drain electrode layer and the etch stop layer not covered by the source/drain electrode layer.

Abstract: An anti-diffusion layer, a preparation method thereof, a thin-film transistor (TFT), an array substrate and a display device are provided, involve the display device manufacturing field and can resolve problem that a high atmosphere temperature is need in process of preparing a tantalum dioxide anti-diffusion layer by PVD or CVD, which causes the gate electrode to volatilize and affect the performance of a display device. The method for preparing the anti-diffusion layer comprises: placing a conductive base (1) and a cathode (4) in a tantalum sulfate solution (3), taking the conductive base (1) as an anode, and forming a tantalum dioxide anti-diffusion layer on the conductive base (1) after energizing.

Abstract: An axial-centrifugal flow catheter pump for cavopulmonary assistance is provided, incorporating a rotor providing both an axial fluid flow and a centrifugal fluid flow. The rotor includes a first terminal impeller configured to provide a centrifugal and axial fluid flow in a first direction, a second terminal impeller configured to provide a centrifugal and axial fluid flow in a second direction opposite to the first direction, and a central impeller configured to provide a predominantly centrifugal fluid flow. The first and second terminal impellers each include blade arrangements configured to provide a centrifugal and axial fluid flow directed toward the rotor central impeller. Cavopulmonary assistance devices are provided including the axial-centrifugal flow catheter pump.

Abstract: A thin film transistor and a manufacturing method for the same, an array substrate, and a display device are disclosed. The thin film transistor comprises: a substrate (1) and a gate (2), a first gate insulating layer (3) and an active layer (4) which are disposed in order on the substrate, the first gate insulating layer (3) covers the gate (2), the active layer (4) covers the first gate insulating layer (3), and a material for the first gate insulating layer comprises aluminum oxide.

Abstract: The present invention discloses a light-emitting display backplane, a display device and a manufacturing method of a pixel define layer. A light-emitting display backplane according to the present invention comprises: a substrate and a pixel define layer provided thereon, wherein said pixel define layer comprises: a first photosensitive resin layer, a first transparent define layer and a second transparent define layer sequentially provided on said substrate from bottom to top, each of the first photosensitive resin layer, the first define layer and the second define layer is provided with openings corresponding to respective pixels, and the openings in said second define layer are smaller than those in both said first define layer and said first photosensitive resin layer, so as to form luminescent material filling regions which are wider at bottom and narrower at top.