Patents by Inventor DongQing Li
DongQing Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20060228886Abstract: A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.Type: ApplicationFiled: June 5, 2006Publication date: October 12, 2006Applicant: Applied Materials, Inc.Inventors: Lin Zhang, Xiaolin Chen, DongQing Li, Thanh Pham, Farhad Moghadam, Zhuang Li, Padmanabhan Krishnaraj
-
Publication number: 20060166515Abstract: A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The silicon oxide film is deposited over the substrate with a halogen concentration less than 1.0%. The silicon oxide film is deposited with the plasma using a process that has simultaneous deposition and sputtering components. The flow rate of the halogen source to the process chamber to the flow rate of the silicon source to the process chamber is substantially between 0.5 and 3.0.Type: ApplicationFiled: March 24, 2006Publication date: July 27, 2006Applicant: Applied Materials, Inc.Inventors: M. Karim, DongQing Li, Jeong Byun, Thanh Pham
-
Patent number: 7081414Abstract: A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.Type: GrantFiled: May 23, 2003Date of Patent: July 25, 2006Assignee: Applied Materials, Inc.Inventors: Lin Zhang, Xiaolin Chen, DongQing Li, Thanh N Pham, Farhad K Moghadam, Zhuang Li, Padmanabhan Krishnaraj
-
Patent number: 7049211Abstract: A process is provided for depositing an undoped silicon oxide film on a substrate disposed in a process chamber. A process gas that includes SiF4, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The undoped silicon oxide film is deposited over the substrate with the plasma using a process that has simultaneous deposition and sputtering components.Type: GrantFiled: March 25, 2005Date of Patent: May 23, 2006Assignee: Applied MaterialsInventors: M. Ziaul Karim, DongQing Li, Jeong Soo Byun, Thanh N. Pham
-
Publication number: 20050181632Abstract: A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The method includes flowing a process gas that includes a silicon-containing source, an oxygen-containing source and a fluorine-containing source into the substrate processing chamber and forming a plasma from said process gas. The substrate is heated to a temperature above 450° C. during deposition of said silicon oxide layer and the deposited layer has a fluorine content of less than 1.0 atomic percent.Type: ApplicationFiled: March 30, 2005Publication date: August 18, 2005Applicant: Applied Materials, Inc., A Delaware corporationInventors: Zhengquan Tan, Dongqing Li, Walter Zygmunt
-
Patent number: 6929700Abstract: A substrate processing apparatus comprising a substrate processing chamber, a gas distribution system operatively coupled to the chamber, a high density plasma power source, a controller operatively coupled to the gas distribution system and the high density plasma power source and a memory coupled to the controller. The memory includes computer instructions embodied in a computer-readable format. The computer instructions comprise (i) instructions that control the gas distribution system to flow a process gas comprising a silane gas, an oxygen-containing source, an inert gas and a hydrogen-containing source that is either molecular hydrogen or a hydride gas that does not include silicon, boron or phosphorus and (ii) instructions that control the high density plasma source to form a plasma having an ion density of at least 1×1011 ions/cm3 from the process gas to deposit the silicon oxide layer over the substrate.Type: GrantFiled: March 25, 2003Date of Patent: August 16, 2005Assignee: Applied Materials, Inc.Inventors: Zhengquan Tan, Dongqing Li, Walter Zygmunt, Tetsuya Ishikawa
-
Publication number: 20050164517Abstract: A process is provided for depositing an undoped silicon oxide film on a substrate disposed in a process chamber. A process gas that includes SiF4, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The undoped silicon oxide film is deposited over the substrate with the plasma using a process that has simultaneous deposition and sputtering components.Type: ApplicationFiled: March 25, 2005Publication date: July 28, 2005Applicant: Applied Materials, Inc.Inventors: M. Karim, DongQing Li, Jeong Byun, Thanh Pham
-
Patent number: 6914016Abstract: A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The method includes flowing a process gas that includes a silicon-containing source, an oxygen-containing source and a fluorine-containing source into the substrate processing chamber and forming a plasma from said process gas. The substrate is heated to a temperature above 450° C. during deposition of said silicon oxide layer and the deposited layer has a fluorine content of less than 1.0 atomic percent.Type: GrantFiled: January 21, 2004Date of Patent: July 5, 2005Assignee: Applied Materials, Inc.Inventors: Zhengquan Tan, Dongqing Li, Walter Zygmunt
-
Publication number: 20050136684Abstract: A variety of techniques may be employed, separately or in combination, to improve the gap-filling performance of a dielectric material formed by chemical vapor deposition (CVD). In one approach, a first dielectric layer is deposited using sub-atmospheric chemical vapor deposition (SACVD), followed by a second dielectric layer deposited by high density plasma chemical vapor deposition (HDP-CVD) or plasma-enhanced chemical vapor deposition (PECVD). In another approach, a SACVD dielectric layer is deposited in the presence of reactive ionic species flowed from a remote plasma chamber into the processing chamber, which performs etching during the deposition process. In still another approach, high aspect trenches may be filled utilizing SACVD in combination with oxide layers deposited at high temperatures.Type: ApplicationFiled: December 23, 2003Publication date: June 23, 2005Applicant: APPLIED MATERIALS, INC.Inventors: Kevin Mukai, Kimberly Branshaw, Zheng Yuan, Xinyun Xia, Xiaolin Chen, Dongqing Li, M. Karim, Van Ton, Cary Ching, Steve Ghanayeim, Nitin Ingle
-
Patent number: 6908862Abstract: A method of depositing a film on a substrate disposed in a substrate processing chamber. The method includes depositing a first portion of the film by forming a high density plasma from a first gaseous mixture flown into the process chamber. The deposition processes is then stopped and part of the deposited first portion of the film is etched by flowing a halogen etchant into the processing chamber. Next, the surface of the etched film is passivated by flowing a passivation gas into the processing chamber, and then a second portion of the film is deposited over the first portion by forming a high density plasma from a second gaseous mixture flown into the process chamber. In one embodiment the passivation gas consists of an oxygen source with our without an inert gas.Type: GrantFiled: May 3, 2002Date of Patent: June 21, 2005Assignee: Applied Materials, Inc.Inventors: Dongqing Li, Xiaolin C. Chen, Lin Zhang
-
Patent number: 6903031Abstract: A process is provided for depositing an undoped silicon oxide film on a substrate disposed in a process chamber. A process gas that includes SiF4, H2, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The undoped silicon oxide film is deposited over the substrate with the plasma using a process that has simultaneous deposition and sputtering components. A temperature of the substrate during such depositing is greater than 450° C.Type: GrantFiled: September 3, 2003Date of Patent: June 7, 2005Assignee: Applied Materials, Inc.Inventors: M. Ziaul Karim, DongQing Li, Jeong Soo Byun, Thanh N. Pham
-
Publication number: 20050048801Abstract: A process is provided for depositing an undoped silicon oxide film on a substrate disposed in a process chamber. A process gas that includes SiF4, H2, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The undoped silicon oxide film is deposited over the substrate with the plasma using a process that has simultaneous deposition and sputtering components. A temperature of the substrate during such depositing is greater than 450° C.Type: ApplicationFiled: September 3, 2003Publication date: March 3, 2005Applicant: APPLIED MATERIALS, INC.Inventors: M. Karim, DongQing Li, Jeong Byun, Thanh Pham
-
Publication number: 20040251236Abstract: A deposition / etching /deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition /etching /deposition process is begun.Type: ApplicationFiled: May 23, 2003Publication date: December 16, 2004Applicant: Applied Materials, Inc.Inventors: Lin Zhang, Xiaolin Chen, DongQing Li, Thanh N. Pham, Farhad K. Moghadam, Shuang Li, Padmanabhan Krishnaraj
-
Publication number: 20040245091Abstract: A gapfill process is provided using cycling of HDP-CVD deposition, etching, and deposition step. The fluent gas during the first deposition step includes an inert gas such as He, but includes H2 during the remainder deposition step. The higher average molecular weight of the fluent gas during the first deposition step provides some cusping over structures that define the gap to protect them during the etching step. The lower average molecular weight of the fluent gas during the remainder deposition step has reduced sputtering characteristics and is effective at filling the remainder of the gap.Type: ApplicationFiled: June 4, 2003Publication date: December 9, 2004Applicant: Applied Materials, Inc.Inventors: M Ziaul Karim, Bikram Kapoor, Anchuan Wang, DongQing Li, Katsunary Ozeki, Manoj Vellaikal, Zhuang Li
-
Publication number: 20040152341Abstract: A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The method includes flowing a process gas that includes a silicon-containing source, an oxygen-containing source and a fluorine-containing source into the substrate processing chamber and forming a plasma from said process gas. The substrate is heated to a temperature above 450° C. during deposition of said silicon oxide layer and the deposited layer has a fluorine content of less than 1.0 atomic percent.Type: ApplicationFiled: January 21, 2004Publication date: August 5, 2004Applicant: Applied Materials, Inc.Inventors: Zhengquan Tan, Dongqing LI, Walter Zygmunt
-
Patent number: 6740601Abstract: A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The method includes flowing a process gas that includes a silicon-containing source, an oxygen-containing source and a fluorine-containing source into the substrate processing chamber and forming a plasma from said process gas. The substrate is heated to a temperature above 450° C. during deposition of said silicon oxide layer and the deposited layer has a fluorine content of less than 1.0 atomic percent.Type: GrantFiled: May 11, 2001Date of Patent: May 25, 2004Assignee: Applied Materials Inc.Inventors: Zhengquan Tan, Dongqing Li, Walter Zygmunt
-
Patent number: 6682603Abstract: A substrate support utilized in high-density plasma chemical vapor deposition (HDP-CVD) processing functions as a radio frequency (RF) electrode (e.g., a bias RF cathode). An upper surface of the substrate support has a central upper surface portion and a peripheral upper surface portion, with the peripheral upper surface portion recessed relative to the central upper surface portion. The upper surface of the support extends beyond an outer edge of the substrate when the substrate is positioned on the substrate support. This extension in the support upper surface may enhance process performance by reducing electric field edge effects, as well as by improving directional distribution of ions traveling to the substrate.Type: GrantFiled: May 7, 2002Date of Patent: January 27, 2004Assignee: Applied Materials Inc.Inventors: Sudhir Gondhalekar, Dongqing Li, Canfeng Lai, Zhengquan Tan, Steve H. Kim, Alexander Veyster
-
Publication number: 20030211757Abstract: A substrate support utilized in high-density plasma chemical vapor deposition (HDP-CVD) processing functions as a radio frequency (RF) electrode (e.g., a bias RF cathode). An upper surface of the substrate support has a central upper surface portion and a peripheral upper surface portion, with the peripheral upper surface portion recessed relative to the central upper surface portion. The upper surface of the support extends beyond an outer edge of the substrate when the substrate is positioned on the substrate support. This extension in the support upper surface may enhance process performance by reducing electric field edge effects, as well as by improving directional distribution of ions traveling to the substrate.Type: ApplicationFiled: May 7, 2002Publication date: November 13, 2003Applicant: APPLIED MATERIALS, INC.Inventors: Sudhir Gondhalekar, Dongqing Li, Canfeng Lai, Zhengquan Tan, Steve H. Kim, Alexander Veyster
-
Publication number: 20030207580Abstract: A method of depositing a film on a substrate disposed in a substrate processing chamber. The method includes depositing a first portion of the film by forming a high density plasma from a first gaseous mixture flown into the process chamber. The deposition processes is then stopped and part of the deposited first portion of the film is etched by flowing a halogen etchant into the processing chamber. Next, the surface of the etched film is passivated by flowing a passivation gas into the processing chamber, and then a second portion of the film is deposited over the first portion by forming a high density plasma from a second gaseous mixture flown into the process chamber. In one embodiment the passivation gas consists of an oxygen source with our without an inert gas.Type: ApplicationFiled: May 3, 2002Publication date: November 6, 2003Applicant: Applied Materials, Inc.Inventors: Dongqing Li, Xiaolin Chen, Lin Zhang
-
Publication number: 20030159656Abstract: A substrate processing apparatus comprising a substrate processing chamber, a gas distribution system operatively coupled to the chamber, a high density plasma power source, a controller operatively coupled to the gas distribution system and the high density plasma power source and a memory coupled to the controller. The memory includes computer instructions embodied in a computer-readable format. The computer instructions comprise (i) instructions that control the gas distribution system to flow a process gas comprising a silane gas, an oxygen-containing source, an inert gas and a hydrogen-containing source that is either molecular hydrogen or a hydride gas that does not include silicon, boron or phosphorus and (ii) instructions that control the high density plasma source to form a plasma having an ion density of at least 1×1011 ions/cm3 from the process gas to deposit the silicon oxide layer over the substrate.Type: ApplicationFiled: March 25, 2003Publication date: August 28, 2003Applicant: Applied Materials, Inc.Inventors: Zhengquan Tan, Dongqing Li, Walter Zygmunt, Tetsuya Ishikawa