Patents by Inventor Dongqing Yang
Dongqing Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11959535Abstract: A continuously variable transmission with both equal-difference output and equal-ratio output includes an input mechanism, a hydraulic transmission mechanism, a planetary-gear-set convergence mechanism, an equal-difference output mechanism, an equal-ratio output mechanism, a clutch assembly, and a brake. The clutch assembly connects an output end of the input mechanism to an input end of the hydraulic transmission mechanism and the planetary-gear-set convergence mechanism and connects an output end of the hydraulic transmission mechanism to the planetary-gear-set convergence mechanism. The clutch assembly connects the planetary-gear-set convergence mechanism to the equal-difference output mechanism and the equal-ratio output mechanism. The clutch assembly connects the equal-ratio output mechanism to the equal-difference output mechanism.Type: GrantFiled: January 10, 2022Date of Patent: April 16, 2024Assignee: JIANGSU UNIVERSITYInventors: Zhen Zhu, Lingxin Zeng, Yingfeng Cai, Long Chen, Yanpeng Yang, Dongqing Wang, Yulin Deng, Xiaodong Sun, Xiang Tian, Yong Wang, Falin Zeng, Chaofeng Pan
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Publication number: 20240117869Abstract: A continuously variable transmission with both equal-difference output and equal-ratio output includes an input mechanism, a hydraulic transmission mechanism, a planetary-gear-set convergence mechanism, an equal-difference output mechanism, an equal-ratio output mechanism, a clutch assembly, and a brake. The clutch assembly connects an output end of the input mechanism to an input end of the hydraulic transmission mechanism and the planetary-gear-set convergence mechanism and connects an output end of the hydraulic transmission mechanism to the planetary-gear-set convergence mechanism. The clutch assembly connects the planetary-gear-set convergence mechanism to the equal-difference output mechanism and the equal-ratio output mechanism. The clutch assembly connects the equal-ratio output mechanism to the equal-difference output mechanism.Type: ApplicationFiled: January 10, 2022Publication date: April 11, 2024Applicant: JIANGSU UNIVERSITYInventors: Zhen ZHU, Lingxin ZENG, Yingfeng CAI, Long CHEN, Yanpeng YANG, Dongqing WANG, Yulin DENG, Xiaodong SUN, Xiang TIAN, Yong WANG, Falin ZENG, Chaofeng PAN
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Publication number: 20240100015Abstract: The present disclosure provides an arctigenin liquid nano-preparation and a preparation method thereof, and relates to the technical field of pharmaceutical preparation. In the present disclosure, arctigenin is prepared into a liquid nano-preparation, having advantages of distribution of a droplet diameter on nanoscale, significantly increased specific surface area, rapid absorption, and high bioavailability. Meanwhile, nano-preparation entered the body can be captured by wandering leucocytes, and a medicament is delivered to inflammatory lesions through chemiotaxis, thereby conferring a targeted drug delivery feature on the arctigenin and making a therapy more targeted. Moreover, in the present disclosure, the arctigenin is dissolved in an oil phase, and the oil phase is dissolved in water by emulsification to further make the arctigenin dissolve in the water and increase water solubility of the arctigenin.Type: ApplicationFiled: November 16, 2022Publication date: March 28, 2024Inventors: Bin HE, Lijun WU, Zheng LU, Zhiping RAN, Guoming CHEN, Zhiyong SHAO, Xiabing CHEN, Wei LIU, Ying LI, Wu LIU, Qi ZHOU, Wenhai YANG, Dongqing LIU, Kangyu DU
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Publication number: 20240087910Abstract: A semiconductor processing method may include providing a fluorine-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region. The substrate may include an exposed region of silicon-and-oxygen-containing material. The substrate may include an exposed region of a liner material. The methods may include providing a hydrogen-containing precursor to the semiconductor processing region. The methods may include contacting the substrate with the fluorine-containing precursor and the hydrogen-containing precursor. The methods may include selectively removing at least a portion of the exposed silicon-and-oxygen-containing material.Type: ApplicationFiled: September 14, 2022Publication date: March 14, 2024Applicant: Applied Materials, Inc.Inventors: Lala Zhu, Shi Che, Dongqing Yang, Nitin K. Ingle
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Patent number: 11915950Abstract: Exemplary support assemblies may include a top puck and a backing plate coupled with the top puck. The support assemblies may include a cooling plate coupled with the backing plate. The support assemblies may include a heater coupled between the cooling plate and the backing plate. The support assemblies may also include a back plate coupled with the backing plate about an exterior of the backing plate. The back plate may at least partially define a volume, and the heater and the cooling plate may be housed within the volume.Type: GrantFiled: January 25, 2022Date of Patent: February 27, 2024Assignee: Applied Materials, Inc.Inventors: Mehmet Tugrul Samir, Dongqing Yang, Dmitry Lubomirsky, Peter Hillman, Soonam Park, Martin Yue Choy, Lala Zhu
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Patent number: 11515179Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.Type: GrantFiled: June 29, 2020Date of Patent: November 29, 2022Assignee: Applied Materials, Inc.Inventors: Mehmet Tugrul Samir, Dongqing Yang
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Patent number: 11417534Abstract: Exemplary methods for removing nitride may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may further include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor and flowing the plasma effluents into a processing region of the semiconductor processing chamber housing a substrate. The substrate may include a high-aspect-ratio feature. The substrate may further include a region of exposed nitride and a region of exposed oxide. The methods may further include providing a hydrogen-containing precursor to the processing region to produce an etchant. At least a portion of the exposed nitride may be removed with the etchant.Type: GrantFiled: September 21, 2018Date of Patent: August 16, 2022Assignee: Applied Materials, Inc.Inventors: Ming Xia, Dongqing Yang, Ching-Mei Hsu
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Patent number: 11361939Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include an adapter coupled with the remote plasma unit. The adapter may include a first end and a second end opposite the first end. The adapter may define a central channel through the adapter. The adapter may define an exit from a second channel at the second end, and the adapter may define an exit from a third channel at the second end. The central channel, the second channel, and the third channel may each be fluidly isolated from one another within the adapter.Type: GrantFiled: June 21, 2019Date of Patent: June 14, 2022Assignee: Applied Materials, Inc.Inventors: Mehmet Tugrul Samir, Dongqing Yang, Dmitry Lubomirsky, Peter Hillman, Soonam Park, Martin Yue Choy, Lala Zhu
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Publication number: 20220148894Abstract: Exemplary support assemblies may include a top puck and a backing plate coupled with the top puck. The support assemblies may include a cooling plate coupled with the backing plate. The support assemblies may include a heater coupled between the cooling plate and the backing plate. The support assemblies may also include a back plate coupled with the backing plate about an exterior of the backing plate. The back plate may at least partially define a volume, and the heater and the cooling plate may be housed within the volume.Type: ApplicationFiled: January 25, 2022Publication date: May 12, 2022Applicant: Applied Materials, Inc.Inventors: Mehmet Tugrul Samir, Dongqing Yang, Dmitry Lubomirsky, Peter Hillman, Soonam Park, Martin Yue Choy, Lala Zhu
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Patent number: 11276559Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include an adapter coupled with the remote plasma unit. The adapter may include a first end and a second end opposite the first end. The adapter may define a central channel through the adapter. The adapter may define an exit from a second channel at the second end, and the adapter may define an exit from a third channel at the second end. The central channel, the second channel, and the third channel may each be fluidly isolated from one another within the adapter.Type: GrantFiled: May 17, 2017Date of Patent: March 15, 2022Assignee: Applied Materials, Inc.Inventors: Mehmet Tugrul Samir, Dongqing Yang, Dmitry Lubomirsky, Peter Hillman, Soonam Park, Martin Yue Choy, Lala Zhu
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Patent number: 11276590Abstract: Exemplary support assemblies may include a top puck and a backing plate coupled with the top puck. The support assemblies may include a cooling plate coupled with the backing plate. The support assemblies may include a heater coupled between the cooling plate and the backing plate. The support assemblies may also include a back plate coupled with the backing plate about an exterior of the backing plate. The back plate may at least partially define a volume, and the heater and the cooling plate may be housed within the volume.Type: GrantFiled: May 17, 2017Date of Patent: March 15, 2022Assignee: Applied Materials, Inc.Inventors: Mehmet Tugrul Samir, Dongqing Yang, Dmitry Lubomirsky, Peter Hillman, Soonam Park, Martin Yue Choy, Lala Zhu
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Patent number: 11164724Abstract: Embodiments of the present disclosure generally provide improved methods for processing substrates with improved process stability, increased mean wafers between clean, and/or improved within wafer uniformity. One embodiment provides a method for seasoning one or more chamber components in a process chamber. The method includes placing a dummy substrate in the process chamber, flowing a processing gas mixture to the process chamber to react with the dummy substrate and generate a byproduct on the dummy substrate, and annealing the dummy substrate to sublimate the byproduct while at least one purge conduit of the process chamber is closed.Type: GrantFiled: June 5, 2018Date of Patent: November 2, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Sang Won Kang, Nicholas Celeste, Dmitry Lubomirsky, Peter Hillman, Douglas Brenton Hayden, Dongqing Yang
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Patent number: 11101136Abstract: Embodiments of the present technology may include a method of etching. The method may include mixing plasma effluents with a gas in a first section of a chamber to form a first mixture. The method may also include flowing the first mixture to a substrate in a second section of the chamber. The first section and the second section may include nickel plated material. The method may further include reacting the first mixture with the substrate to etch a first layer selectively over a second layer. In addition, the method may include forming a second mixture including products from reacting the first mixture with the substrate.Type: GrantFiled: May 20, 2019Date of Patent: August 24, 2021Assignee: Applied Materials, Inc.Inventors: Dongqing Yang, Tien Fak Tan, Peter Hillman, Lala Zhu, Nitin K. Ingle, Dmitry Lubomirsky, Christopher Snedigar, Ming Xia
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Patent number: 10964512Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.Type: GrantFiled: March 30, 2018Date of Patent: March 30, 2021Assignee: Applied Materials, Inc.Inventors: Mehmet Tugrul Samir, Dongqing Yang, Dmitry Lubomirsky
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Publication number: 20210043448Abstract: Processing platforms having a central transfer station with a robot and an environment having greater than or equal to about 0.1% by weight water vapor, a pre-clean chamber connected to a side of the transfer station and a batch processing chamber connected to a side of the transfer station. The processing platform configured to pre-clean a substrate to remove native oxides from a first surface, form a blocking layer using a alkylsilane and selectively deposit a film. Methods of using the processing platforms and processing a plurality of wafers are also described.Type: ApplicationFiled: October 27, 2020Publication date: February 11, 2021Applicant: Applied Materials, Inc.Inventors: Ning Li, Mihaela A. Balseanu, Li-Qun Xia, Dongqing Yang, Lala Zhu, Malcolm J. Bevan, Theresa Kramer Guarini, Wenbo Yan
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Publication number: 20200328098Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.Type: ApplicationFiled: June 29, 2020Publication date: October 15, 2020Applicant: Applied Materials, Inc.Inventors: Mehmet Tugrul Samir, Dongqing Yang
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Patent number: 10699921Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.Type: GrantFiled: June 21, 2019Date of Patent: June 30, 2020Assignee: Applied Materials, Inc.Inventors: Mehmet Tugrul Samir, Dongqing Yang
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Patent number: 10679870Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.Type: GrantFiled: February 15, 2018Date of Patent: June 9, 2020Assignee: Applied Materials, Inc.Inventors: Mehmet Tugrul Samir, Dongqing Yang
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Publication number: 20200098586Abstract: Exemplary methods for removing nitride may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may further include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor and flowing the plasma effluents into a processing region of the semiconductor processing chamber housing a substrate. The substrate may include a high-aspect-ratio feature. The substrate may further include a region of exposed nitride and a region of exposed oxide. The methods may further include providing a hydrogen-containing precursor to the processing region to produce an etchant. At least a portion of the exposed nitride may be removed with the etchant.Type: ApplicationFiled: September 21, 2018Publication date: March 26, 2020Applicant: Applied Materials, Inc.Inventors: Ming Xia, Dongqing Yang, Ching-Mei Hsu
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Publication number: 20190333786Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.Type: ApplicationFiled: June 21, 2019Publication date: October 31, 2019Applicant: Applied Materials, Inc.Inventors: Mehmet Tugrul Samir, Dongqing Yang