Patents by Inventor Dongqing Yang

Dongqing Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110266252
    Abstract: Methods of dry etching silicon-containing dielectric films are described. The methods include maintaining a relatively high temperature of the dielectric films while etching in order to achieve reduced solid residue on the etched surface. Partially or completely avoiding the accumulation of solid residue increases the etch rate.
    Type: Application
    Filed: July 20, 2010
    Publication date: November 3, 2011
    Applicant: Applied Materials, Inc.
    Inventors: Kiran V. Thadani, Jing Tang, Nitin Ingle, Dongqing Yang
  • Publication number: 20110230052
    Abstract: A method of etching silicon oxide from a narrow trench and a wide trench (or open area) is described which allows the etch in the wide trench to progress further than the etch in the narrow trench. The method includes two dry etch cycles. The first dry etch cycle involves a low intensity or abbreviated sublimation step which leaves solid residue in the narrow trench. The remaining solid residue inhibits etch progress in the narrow trench during the second dry etch cycle allowing the etch in the wide trench to overtake the etch in the narrow trench.
    Type: Application
    Filed: December 2, 2010
    Publication date: September 22, 2011
    Applicant: Applied Materials, Inc.
    Inventors: Jing Tang, Nitin Ingle, Dongqing Yang, Shankar Venkataraman
  • Publication number: 20110151674
    Abstract: A method of etching silicon-containing material is described and includes a SiConi™ etch having a greater or lesser flow ratio of hydrogen compared to fluorine than that found in the prior art. Modifying the flow rate ratios in this way has been found to reduce roughness of the post-etch surface and to reduce the difference in etch-rate between densely and sparsely patterned areas. Alternative means of reducing post-etch surface roughness include pulsing the flows of the precursors and/or the plasma power, maintaining a relatively high substrate temperature and performing the SiConi™ in multiple steps. Each of these approaches, either alone or in combination, serve to reduce the roughness of the etched surface by limiting solid residue grain size.
    Type: Application
    Filed: December 23, 2009
    Publication date: June 23, 2011
    Applicant: Applied Materials, Inc.
    Inventors: JING TANG, Nitin Ingle, Dongqing Yang