Abstract: The present disclosure provides an image inpainting method and an image inpainting device. The present disclosure in at least one embodiment provides a method of inpainting an image area obscured by an object included in an image, including selecting one or more frames among input frames of the image, wherein each of the one or more frames is selected as a target frame including an inpainting area obscured by the object or as a reference frame including information on the inpainting area, and performing at least one of inter inpainting or intra inpainting depending on a number of frames selected as the reference frame.

Abstract: A video processing system including: at least one camera configured to obtain video data; a display interface; and a video analyzer including a memory storing instructions, and a processor configured to execute the instructions to: receive a video data from at least one camera; identify a plurality of video frames in which events occur from the received video data; generate a plurality of thumbnail images respectively representing the plurality of video frames; display a timeline interface indicating respective times of the events via a plurality of markers; and provide the plurality of thumbnail images in a thumbnail area adjacent to the timeline interface respectively corresponding with the plurality of markers, where left ends of the plurality of markers indicate start times of the events, and left ends of the plurality of thumbnail images coincide with the left ends of the plurality of markers.

Abstract: A display device and a method of manufacturing the display device are provided. The display device includes a substrate including a main portion and a plurality of protrusion patterns protruding outwardly from an edge of the main portion, a display layer on each of the protrusion patterns, a first insulating layer covering the display layer and a second insulating layer on the first insulating layer. Adjacent protrusion patterns are separated by a cutout portion and side surfaces of the adjacent protrusion patterns face each other. The first insulating layer includes adjacent first insulating layers on the adjacent protrusion patterns that face each other and are separated by the cutout portion. The second insulating layer is on a top surface of the first insulating layer on each of the protrusion patterns, and is not on a side surface of the display layer.

Abstract: Disclosed are a binder composition that may exhibit superior binding ability when being contained in a negative electrode, a negative electrode including a binder composed of the composition, a method for manufacturing the negative electrode, and an all-solid-state battery including the negative electrode that may exhibit superior cycle life characteristics. The binder composition includes a polymer including a reactive diene, an acrylate-based compound, and a photo-crosslink initiator. A ratio between a total number of moles of double bonds in the polymer and a total number of moles of double bonds in the acrylate-based compound is in a range of 6:4 inclusive to 9:1 inclusive.

Abstract: The present disclosure relates to an atomic layer deposition apparatus, and more particularly, to an atomic layer deposition apparatus for depositing an atomic layer on a flexible substrate.

Abstract: A semiconductor device includes channel layers on a substrate, the channel layers being spaced apart from each other, and having first side surfaces and second side surfaces opposing each other in a first direction, a gate electrode surrounding the channel layers and having a first end portion and a second end portion, opposing each other in the first direction, and a source/drain layer on a first side of the gate electrode and in contact with the channel layers, a portion of the source/drain layer protruding further than the first end portion of the gate electrode in the first direction, wherein a first distance from the first end portion of the gate electrode to the first side surfaces of the channel layers is shorter than a second distance from the second end portion of the gate electrode to the second side surfaces of the channel layers.

Abstract: A semiconductor device includes an active pattern with a lower pattern and sheet patterns spaced apart from the lower pattern, a gate structure on the lower pattern and having a gate electrode and a gate insulating film that surround each of the sheet patterns, a gate capping pattern on the gate structure, a gate etching stop pattern between the gate capping pattern and the gate structure, a gate spacer along a sidewall of the gate capping pattern, a source/drain pattern on the gate structure, a gate contact through the gate capping pattern and connected to the gate electrode, upper surfaces of the gate contact and gate spacer being coplanar, and a source/drain contact on the source/drain pattern and connected to the source/drain pattern.

Abstract: A video processing system including: at least one camera configured to obtain video data; a display interface; and a video analyzer including a memory storing instructions, and a processor configured to execute the instructions to: receive a video data from at least one camera; identify a plurality of video frames in which events occur from the received video data; generate a plurality of thumbnail images respectively representing the plurality of video frames; display a timeline interface indicating respective times of the events via a plurality of markers; and provide the plurality of thumbnail images in a thumbnail area adjacent to the timeline interface respectively corresponding with the plurality of markers, where left ends of the plurality of markers indicate start times of the events, and left ends of the plurality of thumbnail images coincide with the left ends of the plurality of markers.

Abstract: The present invention discloses a neuron and a neuromorphic system including the same. The neuron according to an embodiment of the present invention includes a metal insulator metal (MIM) device including a metal ion-doped insulating layer and configured to perform integration and fire, and the MIM device is formed to have a negative differential resistance (NDR) region in which current decreases as voltage increases.

Abstract: A method of fabricating a semiconductor device, including forming first and second active patterns on a substrate, in which the first and second active patterns are spaced apart, forming gate electrodes on the first and second active patterns, in which the gate electrodes are spaced apart, and forming a non-linear gate separation structure between the first and second active patterns, including a first side facing the second active pattern, and a second side opposite to the first side, a distance from the second active pattern to the first side of a first portion of the non-linear gate separation structure is smaller than a distance to the first side of a second portion of the non-linear gate separation structure, and a distance from the second active pattern to the second side of the first portion is smaller than a distance to the second side of the second portion.

Abstract: A semiconductor device including a substrate, a first and second active pattern extending in a first horizontal direction on the substrate, the second active pattern apart from the first active pattern in the first horizontal direction, first nanosheets apart from each other in a vertical direction on the first active pattern, second nanosheets apart from each other in the vertical direction on the first and second active patterns, a gate electrode extending in a second horizontal direction different from the first horizontal direction on the first active pattern and surrounding the first nanosheets, a source/drain region between the first and second nanosheets, an active cut penetrating the second nanosheets in the vertical direction, extending to the substrate, and separating the first and second active patterns, and a sacrificial layer between the source/drain region and the active cut, in contact with the active cut, and including silicon germanium may be provided.

Abstract: An anode for a lithium secondary battery includes a current collector, a lithium alloy layer including lithium and an alloying metal different from lithium, and a protective layer including a lithium compound and an oxide of the alloying metal. The lithium alloy layer is positioned between the current collector and the protective layer.

Abstract: Disclosed are a neuron and a neuromorphic system including the same. More particularly, a neuron according to an embodiment of the present invention includes a completely depleted Silicon-On-Insulator (SOI) device whose a depletion region is controlled according to an inputted electrical signal to perform integration and leakage.

Abstract: An embodiment roof assembly for a vehicle includes a roof panel including a core, an upper skin attached to a top surface of the core, and a lower skin attached to a bottom surface of the core, a face sheet disposed above the roof panel, and a foam layer interposed between the roof panel and the face sheet.

Abstract: A semiconductor device includes channel layers on a substrate, the channel layers being spaced apart from each other, and having first side surfaces and second side surfaces opposing each other in a first direction, a gate electrode surrounding the channel layers and having a first end portion and a second end portion, opposing each other in the first direction, and a source/drain layer on a first side of the gate electrode and in contact with the channel layers, a portion of the source/drain layer protruding further than the first end portion of the gate electrode in the first direction, wherein a first distance from the first end portion of the gate electrode to the first side surfaces of the channel layers is shorter than a second distance from the second end portion of the gate electrode to the second side surfaces of the channel layers.

Abstract: The present disclosure relates to an active heat dissipation apparatus including a thermal conduction panel body having a refrigerant flow space in which a refrigerant is stored and flows, the refrigerant flow space being formed in the thermal conduction panel body, in which the refrigerant flow space includes a first refrigerant flow path positioned to be adjacent to a press-fitting portion provided on a rear surface portion of a heat dissipation housing main body that is a heat dissipation target, the first refrigerant flow path having a vaporization zone in which the refrigerant changes from a liquid phase to a gaseous phase, and a plurality of second refrigerant flow paths provided in a condensation zone provided in a portion other than the first refrigerant flow path and configured to guide a flow of a liquid refrigerant to the vaporization zone, and in which the second refrigerant flow paths protrude in the refrigerant flow space and have surfaces that adjoin one another and are in surface contact with

Abstract: The present disclosure relates to an active heat dissipation apparatus including a thermal conduction panel body having a refrigerant flow space in which a refrigerant is stored and flows, in which the refrigerant flow space includes a first refrigerant flow path including a press-fitting end positioned adjacent to a press-fitting portion provided on a rear surface portion of a heat dissipation housing main body that is a heat dissipation target, the first refrigerant flow path having upper and lower ends coupled in a gravitational direction or coupled to be inclined with respect to the gravitational direction with respect to the press-fitting portion to define a vaporization zone in which the refrigerant changes from a liquid phase to a gaseous phase, and a plurality of strength reinforcement portions formed in a condensation zone other than the first refrigerant flow path and disposed and spaced apart from one another in a predetermined pattern to guide a flow of a liquid refrigerant condensed in the conden

Abstract: A semiconductor device may include a first memory cell array including a first source line, a first bit line, a first memory string, and first word lines; a second memory cell array including a second source line, a second bit line, a second memory string, and second word lines; a first interconnection structure including a first through via passing through the first memory cell array and commonly connected to the first bit line and the second bit line; a second interconnection structure including a second through via passing through the first memory cell array and commonly connected to the first word line and the second word line; a page buffer selectively accessing the first memory string or the second memory string through the first interconnection structure; and a row decoder commonly controlling the first word line and the second word line through the second interconnection structure.

Abstract: The present disclosure relates to an active heat dissipation apparatus and a method of manufacturing the same, and an active heat dissipation apparatus according to the present disclosure includes a thermal conduction panel body having therein a refrigerant flow space having a predetermined thickness, and a refrigerant with which the refrigerant flow space of the thermal conduction panel body is filled, in which the thermal conduction panel body is made of a metallic material capable of transferring heat into the refrigerant flow space from the outside, and in which the refrigerant is water that is changed in phase from a liquid state to a gaseous state or from a gaseous state to a liquid state by thermal conductivity of the thermal conduction panel body, thereby significantly improving heat dissipation performance.

Abstract: A present invention relates to a fabric treating apparatus including an inside cabinet which forms a treating chamber which the fabrics treated in, and a heating unit for supplying any one between hot wind and steam to the treating chamber, and a hanger rack disposed in the treating chamber, and a driving unit for generating rotary power outside the treating chamber and is disposed upper part of the inside cabinet, and a transmission unit for reciprocating the hanger rack by transmitting the rotary power of the driving unit.