Abstract: Provided according to an embodiment of the present disclosure is a heating element cooling device comprising: a body part including a hollow portion in which working fluid is circulated and a wick portion which is disposed in at least a part of an inner wall of the body part and through which the working fluid flows to a heat source; a space part formed to extend from each of both ends of the body part and including a hollow portion; and a block part inserted into and welded to the space part.

Abstract: The present disclosure relates to an electrode including a catalyst wherein the catalyst including a nitrogen-doped copper sulfide/oxide, a metal-air battery including the same, and a method of preparing the catalyst including a nitrogen-doped copper sulfide/oxide. The metal-air battery of the present disclosure can operate via aerobic and anaerobic battery modes.

Abstract: The present disclosure relates to an air electrode for a metal-air battery including a cobalt-manganese heterostructure, a metal-air battery including the same, and a method of preparing the cobalt-manganese heterostructure. A cobalt-manganese heterostructure according to embodiments of the present disclosure exhibits excellent oxygen reduction reaction (ORR) activity and durability as well as superior oxygen evolution reaction (OER) performances including a high current density to RuO2 OER catalysts.

Abstract: Disclosed is a rechargeable lithium battery including a positive electrode, a negative electrode, a separator between the positive electrode and the negative electrode, and a gel polymer electrolyte, wherein the positive electrode includes a positive electrode active material including a lithium cobalt-based oxide; the gel polymer electrolyte includes a polymer and an electrolyte solution; the polymer has three or more functional groups but not include an ether group; the electrolyte includes a lithium salt and a solvent; and the lithium slat includes lithium difluoro(oxalato)borate and LiBF4.

Abstract: A semiconductor device is provided. The semiconductor device includes: a first wire pattern disposed on a substrate and extending in a first direction; a first gate electrode surrounding the first wire pattern and extending in a second direction, the first direction intersecting the second direction perpendicularly; a first transistor including the first wire pattern and the first gate electrode; a second wire pattern disposed on the substrate and extending in the first direction; a second gate electrode surrounding the second wire pattern and extending in the second direction; and a second transistor including the second wire pattern and the second gate electrode, wherein a width of the first wire pattern in the second direction is different from a width of the second wire pattern in the second direction.

Abstract: The present invention relates to a heat sink structure and a manufacturing method thereof, in which a plurality of heat radiation fin parts, which is configured to radiate heat, is fixed to a heat radiation surface of a heat sink main body part by laser welding, such that thicknesses of and intervals between the plurality of heat radiation fin parts may be minimized, heat dissipation performance may be improved, a weight may be greatly reduced, and production lead time and manufacturing costs may be significantly reduced by manufacturing only the heat sink main body part by casting.

Abstract: A lower cross member for a vehicle is disposed on a floor of a vehicle. The lower cross member includes a core member and a reinforcing layer. The core member is made of a composite material containing 70 wt. % or more of unidirectional carbon fibers, and the reinforcing layer is made of a composite material containing 70 wt. % or more of fiberglass.

Abstract: Semiconductor devices include a first active pattern including a first lower pattern extending in a first direction and a first sheet pattern spaced apart from the first lower pattern; and a first gate electrode on the first lower pattern, the first gate electrode extending in a second direction and surrounding the first sheet pattern, wherein the first lower pattern includes a first sidewall and a second sidewall opposite to each other, each of the first sidewall of the first lower pattern and the second sidewall of the first lower pattern extends in the first direction, the first gate electrode overlaps the first sidewall of the first lower pattern in the second direction by a first depth, the first gate electrode overlaps the second sidewall of the first lower pattern in the second direction by a second depth, and the first depth is different from the second depth.

Abstract: The present invention relates to a polymer, an organic solar cell comprising the polymer, and a perovskite solar cell comprising the polymer. The polymer according to the present invention has excellent absorption ability for visible light and an energy level suitable for the use as an electron donor compound in a photo-active layer of the organic solar cell, thereby increasing the light conversion efficiency of the organic solar cell. In addition, the polymer according to the present invention has high hole mobility, and is used as a compound for a hole transport layer, and thus can improve efficiency and service life of the perovskite solar cell without an additive.

Abstract: A washing machine including a plurality of washers may include a fixing bracket coupled to a front of a first housing in which a first tub is disposed and a front of a second housing in which a second tub is disposed, to prevent the first housing and the second housing from being separated from each other.

Abstract: A calibration method of an optical coherence tomography (OCT) device and a camera using the same target includes irradiating a shape measurement light to a calibration target, obtaining a surface shape image thereof by detecting light reflected by a surface of the calibration target using a shape measurement camera, and calibrating the surface shape image according to an actual shape of the calibration target; obtaining surface and internal three-dimensional images of the calibration target by scanning with a layer measurement light using the OCT measurement unit, extracting a surface shape image of the calibration target from the three-dimensional images, and calibrating the surface shape image according to the actual surface shape of the calibration target; and matching a calibration image obtained by the shape measurement camera and a surface calibration image obtained by the OCT measurement unit to be displayed at the same spatial coordinates.

Abstract: An image search device includes at least one processor and at least one memory storing instructions, where, by executing instructions stored on the at least one memory, the at least one processor is configured to: receive a plurality of images and a plurality of metadata from a plurality of camera devices through a communication interface; receive an object search command and a property search command inputted by a user; extract objects corresponding to the object search command based on the plurality of metadata, and extract properties of the extracted objects; generate a search interface including a property search menu which displays a list of the extracted properties for selection through the property search command; and display the generated search interface, where, based on the object search command being changed, the properties displayed in the property search menu are changed in the search interface according to the changed object search command.

Abstract: Semiconductor devices include a first active pattern including a first lower pattern extending in a first direction and a first sheet pattern spaced apart from the first lower pattern; and a first gate electrode on the first lower pattern, the first gate electrode extending in a second direction and surrounding the first sheet pattern, wherein the first lower pattern includes a first sidewall and a second sidewall opposite to each other, each of the first sidewall of the first lower pattern and the second sidewall of the first lower pattern extends in the first direction, the first gate electrode overlaps the first sidewall of the first lower pattern in the second direction by a first depth, the first gate electrode overlaps the second sidewall of the first lower pattern in the second direction by a second depth, and the first depth is different from the second depth.

Abstract: The present disclosure relates to semiconductor devices. An example semiconductor device includes a substrate including first and second regions, a first bridge pattern extending in a first direction on the first region, a first gate structure extending in a second direction intersecting the first direction, first epitaxial patterns connected to the first bridge pattern on side surfaces of the first gate structure, first inner spacers interposed between the substrate and the first bridge pattern and between the first gate structure and the first epitaxial patterns, a second bridge pattern extending in the first direction on the second region, a second gate structure extending in the second direction, second epitaxial patterns connected to the second bridge pattern on side surfaces of the second gate structure, and second inner spacers interposed between the substrate and the second bridge pattern and between the second gate structure and the second epitaxial patterns.

Abstract: A semiconductor device is provided. The semiconductor includes at least one of a well area in a substrate and having a first conductivity-type; impurity-implanted areas in the well, and having a second conductivity-type different from the first conductivity-type and arranged in a first direction, a first fin structure on the impurity-implanted area and having the second conductivity-type, wherein the first fin structure includes first semiconductor patterns and first sacrificial patterns alternately stacked; a first contact on the first fin structure; a first epitaxial pattern on the well area and having the first conductivity-type; and a second contact on the first epitaxial pattern.

Abstract: A display device includes a display panel including a main portion, a first bent portion and a second bent portion each extending from the main portion, and a corner portion which connects the first bent portion and the second bent portion to each other and is bendable relative to the main portion. The corner portion which is bendable includes a plurality of protrusion patterns partially disconnected from each other and each bendable relative to the main portion, and each of the plurality of protrusion patterns including a display pixel.

Abstract: A semiconductor device includes a first lower line and a second lower line on a substrate, the first and second lower lines extending in a first direction, being adjacent to each other, and being spaced apart along a second direction, orthogonal the first direction, an airgap between the first and second lower lines and spaced therefrom along the second direction, a first insulating spacer on a side wall of the first lower line facing the second lower line, wherein a distance from the first airgap to the first lower line along the second direction is equal to or greater than an overlay specification of a design rule of the semiconductor device, and a second insulating spacer between the airgap and the second lower line.

Abstract: A semiconductor device is provided. The semiconductor includes a substrate having a first conductivity type; a well region having a second conductivity type in the substrate; an impurity implantation region having the first conductivity type in the well region; an element separation pattern in the substrate; a first fin pattern defined by the element separation pattern in the impurity implantation region; a second fin pattern defined by the element separation pattern in the well region; and a third fin pattern defined by the element separation pattern in the substrate, wherein the first fin pattern is a single fin, and an entirety of a lower boundary of the impurity implantation region is in contact with the well region.

Abstract: An atomic layer depositing apparatus includes: a gas supply assembly configured to supply a source gas, a reaction gas, and a purge gas; and a substrate transfer module disposed on a lower side of the gas supply assembly, configured to move linearly, and having an upper side on which the substrate is seated. The gas supply assembly includes: a purge gas supply module connected to a purge gas supply line in which the purge gas flows, a reaction gas supply module connected to a reaction gas supply line in which the reaction gas flows, a source gas supply module configured to selectively communicate with any one of the purge gas supply line and a source gas supply line in which the source gas flows, a pumping module disposed among the purge gas supply module, the reaction gas supply module, and the source gas supply module.

Abstract: The present disclosure relates to a positive electrode for an all-solid-state battery, comprising: a positive electrode active material; a perfluorinated ionomer comprising lithium substituted sulfonate; a solid electrolyte; and conductive carbon, and an all-solid-state battery comprising the same.