Abstract: A semiconductor package includes a base substrate, an interposer package disposed on the base substrate, and first and second semiconductor chips disposed on the interposer package, the interposer package includes a first redistribution layer, a bridge chip including a bridge circuit, and a vertical connection structure including a plurality of wiring layers, and wherein each of the first semiconductor chip and the second semiconductor chip is electrically connected to the bridge circuit and the plurality of wiring layers through the first redistribution layer.

Abstract: An electronic device according to one embodiment may comprise: an amplifier circuit for amplifying a signal of a specific frequency band; an over voltage protection (OVP) circuit for reducing voltage applied to the amplifier, if the voltage applied to the amplifier circuit is a reference voltage or higher; at least one coupler for acquiring a part of a signal that is output to an antenna from the amplifier circuit; a memory; and a communication processor.

Abstract: A semiconductor package may include a first redistribution layer, a passive device disposed on a top surface of the first redistribution layer, a bridge structure disposed on the top surface of the first redistribution layer and laterally spaced apart from the passive device, a second redistribution layer disposed on and electrically connected to the passive device and the bridge structure, conductive structures disposed between the first redistribution layer and the second redistribution layer and laterally spaced apart from the passive device and the bridge structure, a first semiconductor chip mounted on a top surface of the second redistribution layer, and a second semiconductor chip mounted on the top surface of the second redistribution layer. The conductive structures may include a signal structure and a ground/power structure, which is laterally spaced apart from the signal structure and has a width larger than the signal structure.

Abstract: A semiconductor package includes a frame structure having a core portion and a lower pad under the core portion. A cavity penetrates the core portion, and a semiconductor chip is arranged in the cavity and has an active surface on which a bump pad is arranged and a non-active surface facing the active surface. A redistribution structure is positioned under the frame structure and the semiconductor chip, and is connected to the lower pad and the bump pad. A molding member covers the frame structure and the semiconductor chip and fills the cavity. The molding member surrounds a lower surface of the frame structure, the active surface of the semiconductor chip, the lower pad, and the bump pad.

Abstract: A transmission device includes: a first frequency converter configured to convert a frequency of a baseband signal into an intermediate frequency according to a desired OAM mode; a delay line configured to generate a delay in a signal of the intermediate frequency; and a second frequency converter configured to convert the signal of the intermediate frequency in which the delay is generated into a constant radio frequency.

Abstract: A switch in an electronic device includes a substrate, a first signal line, a second signal line, and a ground bridge. The first signal line is on the substrate and extends in a first direction. The second signal line is on the substrate and is spaced apart from the first signal line in a first direction parallel with the first signal line to branch the wireless communication signal at a first point and a second point of the first signal line. The ground bridge is at least partially movable in a space between the first signal line and the second signal line. A first capacitor is between a first point of the first signal line and one end of the second signal line, and a second capacitor is between a second point of the first signal line and the other end of the second signal line.

Abstract: Provided is method of manufacturing a semiconductor device. The method includes: forming a metal layer on a carrier; forming a conductor pattern layer on the metal layer; mounting a semiconductor chip on a tape; forming an encapsulant covering the semiconductor chip; attaching the conductor pattern layer to the encapsulant; removing the tape; and forming a connection structure electrically connected to the semiconductor chip in an area from which the tape is removed.

Abstract: A semiconductor package may include a first redistribution layer, a passive device disposed on a top surface of the first redistribution layer, a bridge structure disposed on the top surface of the first redistribution layer and laterally spaced apart from the passive device, a second redistribution layer disposed on and electrically connected to the passive device and the bridge structure, conductive structures disposed between the first redistribution layer and the second redistribution layer and laterally spaced apart from the passive device and the bridge structure, a first semiconductor chip mounted on a top surface of the second redistribution layer, and a second semiconductor chip mounted on the top surface of the second redistribution layer. The conductive structures may include a signal structure and a ground/power structure, which is laterally spaced apart from the signal structure and has a width larger than the signal structure.

Abstract: A wireless communication system includes a transmission apparatus and a reception apparatus, in which the transmission apparatus includes a plurality of UCAs having a first UCA and a second UCA, the reception apparatus includes a third UCA, a transmission axis of the first UCA and a transmission axis of the second UCA are directed in different directions, and the first UCA faces the third UCA.

Abstract: A transmission apparatus includes: a spherical array antenna including a plurality of antenna elements on a spherical surface; and a control unit that selects a plurality of antenna elements present on any circle from among the plurality of antenna elements of the spherical array antenna as a UCA and causes the selected UCA to perform OAM transmission.

Abstract: A transmission apparatus includes: a grid point array antenna including a plurality of antenna elements on a polyhedron; and a control unit that selects a plurality of antenna elements present on any circle from among the plurality of antenna elements of the grid point array antenna as a UCA, and causes the selected UCA to perform OAM transmission.

Abstract: A semiconductor package includes a frame having a through-opening, a first semiconductor chip disposed in the through-opening and having a first active surface on which a first connection pad is disposed and a first inactive surface opposing the first active surface, a second semiconductor chip disposed on the first semiconductor chip and having a second active surface on which a second connection pad is disposed and a second inactive surface opposing the second active surface, first and second bumps electrically connected to the first and second connection pads, respectively, first and second dummy bumps disposed on a same level as levels of the first and second bumps, respectively, first and second posts electrically connected to the first and second bumps, respectively, a connection member including a redistribution layer electrically connected to each of the first and second posts, and a dummy post disposed between the frame and the connection member.

Abstract: Provided is an electronic device including a transceiver configured to output a first transmission signal, a first radio frequency (RF) module configured to amplify the first transmission signal obtained from the transceiver to generate an amplified first transmission signal, a first antenna configured to transmit the amplified first transmission signal, and a main coupler provided outside the first RF module along a transmission path between the first RF module and the first antenna, and configured to output a first coupling signal corresponding to the first transmission signal. The first RF module includes at least one power amplifier configured to amplify the first transmission signal, and a switch configured to connect one of a plurality of input ports, including at least one input port connected to the main coupler and configured to receive the first coupling signal output by the main coupler, with an output port connected to the transceiver.

Abstract: A semiconductor package includes a frame having a through-opening, a first semiconductor chip disposed in the through-opening and having a first active surface on which a first connection pad is disposed and a first inactive surface opposing the first active surface, a second semiconductor chip disposed on the first semiconductor chip and having a second active surface on which a second connection pad is disposed and a second inactive surface opposing the second active surface, first and second bumps electrically connected to the first and second connection pads, respectively, first and second dummy bumps disposed on a same level as levels of the first and second bumps, respectively, first and second posts electrically connected to the first and second bumps, respectively, a connection member including a redistribution layer electrically connected to each of the first and second posts, and a dummy post disposed between the frame and the connection member.

Abstract: A semiconductor package includes a frame structure having a core portion and a lower pad under the core portion. A cavity penetrates the core portion, and a semiconductor chip is arranged in the cavity and has an active surface on which a bump pad is arranged and a non-active surface facing the active surface. A redistribution structure is positioned under the frame structure and the semiconductor chip, and is connected to the lower pad and the bump pad. A molding member covers the frame structure and the semiconductor chip and fills the cavity. The molding member surrounds a lower surface of the frame structure, the active surface of the semiconductor chip, the lower pad, and the bump pad.

Abstract: Provided is an electronic device including a transceiver configured to output a first transmission signal, a first radio frequency (RF) module configured to amplify the first transmission signal obtained from the transceiver to generate an amplified first transmission signal, a first antenna configured to transmit the amplified first transmission signal, and a main coupler provided outside the first RF module along a transmission path between the first RF module and the first antenna, and configured to output a first coupling signal corresponding to the first transmission signal. The first RF module includes at least one power amplifier configured to amplify the first transmission signal, and a switch configured to connect one of a plurality of input ports, including at least one input port connected to the main coupler and configured to receive the first coupling signal output by the main coupler, with an output port connected to the transceiver.

Abstract: The disclosure relates to an electronic device and a method for wireless communication including a power amplification circuit. According to an embodiment, an electronic device may include: a radio frequency processing module comprising radio frequency circuitry, a first power amplification circuit connected to the radio frequency processing module, a second power amplification circuit connected to the radio frequency processing module and the first power amplification circuit, and a front-end module comprising circuitry connected to the second power amplification circuit and an antenna and configured to transmit a signal, wherein the second power amplification circuit is configured to acquire, from the first power amplification circuit, a first signal obtained by amplifying a signal output from the radio frequency processing module and a second signal by amplifying a signal output from the radio frequency processing module.

Abstract: A semiconductor package includes a first substrate, a first semiconductor chip and a passive device which are laterally spaced apart from each other on the first substrate and are disposed face-up on the first substrate, a first molding part surrounding the first semiconductor chip and the passive device on the first substrate, a second semiconductor chip disposed on the first molding part and electrically connected to the first semiconductor chip and the passive device, a second molding part surrounding the second semiconductor chip on the first molding part, first through-electrodes vertically penetrating the first molding part, at least some of first through-electrodes electrically connect the first substrate to the second semiconductor chip, and external terminals provided under the first substrate.

Abstract: A semiconductor package includes a frame structure having a core portion and a lower pad under the core portion. A cavity penetrates the core portion, and a semiconductor chip is arranged in the cavity and has an active surface on which a bump pad is arranged and a non-active surface facing the active surface. A redistribution structure is positioned under the frame structure and the semiconductor chip, and is connected to the lower pad and the bump pad. A molding member covers the frame structure and the semiconductor chip and fills the cavity. The molding member surrounds a lower surface of the frame structure, the active surface of the semiconductor chip, the lower pad, and the bump pad.

Abstract: A Butler matrix circuit includes: a phase shifter that shifts the phase of a signal, the width of the phase shifter and/or the density of a dielectric material in the phase shifter being set so that the characteristic impedance of the lowest-order mode in the phase shifter varies in accordance with a predetermined function; and a coupler that divides a signal or crosses signals, the density of a dielectric material in a coupled portion between a first waveguide and a second waveguide arranged in parallel being varied in the coupler.