Abstract: An x-ray detector may comprise: a moisture-impermeable substrate including a non-monolithic conductive portion integrated with a monolithic dielectric portion; a scintillator and an array of CMOS tiles positioned between the scintillator and the substrate; a cover positioned on the substrate and forming a seal therebetween that semi-hermetically encloses the scintillator and the array of CMOS tiles in a covered sealed region; and analog-to-digital electronics conductively coupled to the array of CMOS tiles and to the conductive portion, wherein the conductive portion transmits signals from the covered sealed region to beyond the seal without disrupting a semi-hermeticity of the seal. In this way, sealing of multiply-tiled CMOS image array detectors within a single x-ray detector can be more simply and reliably achieved.

Abstract: A radiation shielding system for an x-ray digital detector array includes a first radiation shield having a plurality of shielding pads and a plurality of interstices between the plurality of shielding pads, the plurality of shielding pads having a greater thickness than the thickness of the plurality of interstices. The plurality of shielding pads is configured to be positioned over active components of the x-ray digital detector array and the interstices are configured to be positioned over passive components of the x-ray digital detector array.

Abstract: Aspects of the present disclosure relate to the fabrication and use of a curved X-ray detector panel, suitable for use in imaging pipes or other curved objects to which the curved detector may be fitted. In certain embodiments, the curved detector panel is fabricated using a thin, flexible substrate that is unbreakable or resistant to breaking.

Abstract: In one embodiment, a digital X-ray detector is provided with a plurality of pixel regions. Each pixel region includes a first photodiode having a first area and a second photodiode having a second area equal to or smaller than the first area. The digital X-ray detector also includes a shielding structure that overlies the first and second photodiodes of each pixel region with the shielding structure shielding proportionally less of the first photodiode than of the second photodiode to provide the first photodiode with a first sensitivity and the second photodiode with a second sensitivity lower than the first sensitivity.

Abstract: In one embodiment, a digital X-ray detector is provided with a plurality of pixel regions. Each pixel region includes a first photodiode having a first area and a second photodiode having a second area equal to or smaller than the first area. The digital X-ray detector also includes a shielding structure that overlies the first and second photodiodes of each pixel region with the shielding structure shielding proportionally less of the first photodiode than of the second photodiode to provide the first photodiode with a first sensitivity and the second photodiode with a second sensitivity lower than the first sensitivity.

Abstract: A detector including an electrode formed from a first layer of conductive material, a readout line formed from a second layer of conductive material, and a via electrically connecting the readout line and the electrode. In one embodiment, the detector includes a source electrode and a drain electrode formed from the first layer of conductive material, and a data line formed from the second layer of conductive material, such that the source and drain electrodes are vertically offset from the data line. Alternatively, in another embodiment, the detector includes a gate electrode formed from the first layer of conductive material, and a scan line formed from the second layer of conductive material, such that the gate electrode is vertically offset from the scan line.

Abstract: An inspection system is provided. The inspection system includes at least one source configured to emit a beam of radiation onto an object. The inspection system also includes at least two area detectors having different characteristics configured to receive a reflected beam of radiation from the object and output a plurality of image data streams corresponding to the different characteristics, wherein the at least two area detectors disposed in at least one of a cascaded arrangement or separated by a pre-determined distance along a direction parallel or perpendicular to a scan direction of the object.

Abstract: A pixel structure for a flat panel detector is constructed in which the diode silicon and the FET silicon are simultaneously etched to form isolated structures (array photodiodes, I/O elements, and so on) in which the edges or perimeters of the diode silicon features are self-aligned to the underlying FET SI features. The full, as-deposited, thickness of the FET gate dielectric and (at least) part of the FET silicon layer remains underneath the diode silicon across the entirety of the flat panel detector.

Abstract: Briefly, in accordance with one or more embodiments, a detector panel of an imaging system may be produced from a photodiode array integrated with a thin-film transistor array. The thin film transistor array may have one or more vias formed for increasing the adhesion of the photodiode array to the thin-film transistor array. The vias may comprise sidewalls having stepped structures. The thin-film transistor array may comprise a first metallization layer and a second metallization layer. A third metallization layer may be added to the thin film transistor array wherein diodes of the photodiode array may contact the third metallization layer. Diodes of the photodiode array may contact the first metallization layer and/or the second metallization layer via the third metallization layer without directly contacting the first metallization layer or the second metallization layer.

Abstract: A cargo container inspection radiation detector apparatus is disclosed. The apparatus includes a support, and a plurality of area radiation detectors disposed upon the support arranged corresponding to a height of the cargo container, each area radiation detector comprising an active area defined by a matrix of pixels.

Abstract: An adaptable imaging assembly is provided. The adaptable imaging assembly includes a free-standing phosphor film configured to receive incident radiation and to emit corresponding optical signals. An electronic device is coupled to the free-standing phosphor film. The electronic device is configured to receive the optical signals from the free-standing phosphor film and to generate an imaging signal. A free-standing phosphor film is also provided and includes x-ray phosphor particles dispersed in a silicone binder. A method for inspecting a component is also provided and includes exposing the component and a free-standing phosphor film to radiation, generating corresponding optical signals with the free standing phosphor film, receiving the optical signals with an electronic device coupled to the free-standing phosphor film and generating an imaging signal using the electronic device.

Abstract: A pixel structure for a flat panel detector is constructed in which the diode silicon and the FET silicon are simultaneously etched to form isolated structures (array photodiodes, I/O elements, and so on) in which the edges or perimeters of the diode silicon features are self-aligned to the underlying FET SI features. The full, as-deposited, thickness of the FET gate dielectric and (at least) part of the FET silicon layer remains underneath the diode silicon across the entirety of the flat panel detector.

Abstract: A dual function detector device operates in either a normal operating mode or in an EMI correction mode to suppress effects of EMI within the detector. The detector device may be a flat panel x-ray detectors used in x-ray imaging systems. The device has a pixel architecture and panel read-out technique that enables real-time, high spatial frequency measurement of noise induced by electromagnetic radiation on a digital x-ray detector. The measurement can be used to calibrate the detector in real-time to attain artifact-free imaging in all environments, including those that contain temporally and spatially changing electromagnetic fields.

Abstract: A method of improving a signal to noise ratio of an image data set of a cargo container is disclosed. The method includes transmitting a radiation beam toward the cargo container, detecting the transmitted radiation beam via a plurality of area radiation detectors, each area radiation detector comprising an active area defined by a matrix of pixels, thereby defining enhanced radiation data, processing the enhanced radiation data and reconstructing the image data set representative of contents of the cargo container, combining image attributes of the image data set to improve the signal to noise ratio, thereby defining an enhanced image data set, and displaying on a display the enhanced image data set comprising an improved signal to noise ratio.

Abstract: A cargo container inspection radiation detector apparatus is disclosed. The apparatus includes a support, and a plurality of area radiation detectors disposed upon the support arranged corresponding to a height of the cargo container, each area radiation detector comprising an active area defined by a matrix of pixels.

Abstract: An adaptable imaging assembly is provided. The adaptable imaging assembly includes a free-standing phosphor film configured to receive incident radiation and to emit corresponding optical signals. An electronic device is coupled to the free-standing phosphor film. The electronic device is configured to receive the optical signals from the free-standing phosphor film and to generate an imaging signal. A free-standing phosphor film is also provided and includes x-ray phosphor particles dispersed in a silicone binder. A method for inspecting a component is also provided and includes exposing the component and a free-standing phosphor film to radiation, generating corresponding optical signals with the free standing phosphor film, receiving the optical signals with an electronic device coupled to the free-standing phosphor film and generating an imaging signal using the electronic device.

Abstract: A method for fabricating an imaging array includes forming a first dielectric barrier, forming a light block element on the first dielectric barrier, wherein the light block element is at least coextensive with a gate, and forming a second dielectric barrier on the first dielectric barrier and the light block element such that the light block element is encapsulated between the first dielectric barrier and the second dielectric barrier.

Abstract: A photodetector for X-ray applications includes a photodiode at each pixel location that is gated to reduce leakage of charge from the photodiode. A gate layer may be disposed around the entire peripheral edge of the detector, and maintained at a common potential with a contact layer, or at a different potential. A passivation or dielectric layer separates the gate layer from the photodiode. Leakage around the edge of the diode that can result from extended exposure to radiation is reduced by the gate layer.

Abstract: A photo-detector having a common electrode comprising a conductive material configured in a non-solid pattern in which there are gaps where there is no conductive material. In one embodiment, the distance (d) or (d?) between conductive portions of the common electrode is in a range from about 3 microns to about 5 microns. Alternatively, in one embodiment, the patterned common electrode covers between 20% to 70% of the surface of the respective photosensor element. A method for making the same is also provided.

Abstract: A photodetector for X-ray applications includes a photodiode at each pixel location that is gated to reduce leakage of charge from the photodiode. A gate layer may be disposed around the entire peripheral edge of the detector, and maintained at a common potential with a contact layer, or at a different potential. A passivation or dielectric layer separates the gate layer from the photodiode. Leakage around the edge of the diode that can result from extended exposure to radiation is reduced by the gate layer.