Abstract: Systems, devices, and methods for narrow waveband laser diodes are described. The conventional coating on the output facet of a laser diode is replaced with a notch filter coating that is reflective of wavelengths within a narrow waveband around the nominal output wavelength of the laser diode and transmissive of other wavelengths. The notch filter coating ensures the laser diode will lase at the nominal wavelength and not lase for wavelengths outside of the narrow waveband. The notch-filtered laser diode provides a narrow waveband output that is matched to the playback wavelength of at least one hologram in a transparent combiner of a wearable heads-up display, and thereby reduces or eliminates display aberrations that can result from wavelength sensitivity of the playback properties of the hologram.

Abstract: There is provided a method of forming a light source, the method comprising providing a backplane comprising a backplane substrate and a semiconductor particle formed separately from the backplane substrate and then fixed upon the backplane substrate at a predetermined position. The semiconductor particle can be planarized to remove a portion of the semiconductor particle and to expose at a cross-section of the semiconductor particle a planar surface. Moreover, the backplane may comprise a controllable gated electronic component on or directly beneath the planar surface. The controllable gated electronic component may be configured to control an LED emitter. The method further comprises providing the LED emitter comprising one or more LEDs electrically connected to the backplane such that at least one of the LEDs is electrically connected to the controllable gated electronic component.

Abstract: There is provided a method of forming an active matrix display, the method comprising providing a backplane comprising: a backplane substrate, a semiconductor particle formed separately from the backplane substrate and then fixed upon the backplane substrate at a predetermined position, the semiconductor particle planarized to remove portions of the semiconductor particle and to expose at a cross-section of the semiconductor particle a planar surface, and a controllable gated electronic component on or directly beneath the planar surface. The method also comprises providing an LED emitter comprising one or more LEDs electrically connected to the backplane such that at least one of the LEDs is electrically connected to the controllable gated electronic component.

Abstract: As a cost effective alternative to lithography, there is provided a method of forming an electronic device comprising the steps of: depositing a first quantity of a first liquid medium comprising a dopant on a first portion of a planar surface and depositing a second quantity of the first liquid medium on a second portion of the surface, the first quantity spaced from the second quantity by a gap; heating the first quantity, the second quantity, and the surface, the heating configured to cause diffusion of at least some of the dopant from the first liquid medium into the surface; depositing a dielectric material on the surface in the gap; selectively removing the first quantity and the second quantity from the surface; depositing an electrical contact on each of the first portion and the second portion; and depositing a further electrical contact on the dielectric material.

Abstract: According to the present specification there is provided an active matrix OLED display and a method of fabrication thereof, the method comprising: providing a backplane and an OLED assembly and then joining the two together. The backplane comprises a plurality of controllable gated electronic components each at a predetermined position on or directly beneath a surface of the backplane substrate. The controllable gated electronic components are configured to control one or more pixels of the active matrix OLED display. The OLED assembly comprises one or more pixel regions each having one or more pixel contacts. In addition, the OLED assembly is formed separately from the backplane on an OLED substrate different from the backplane substrate. The joining comprises electrically connecting one or more of the pixel contacts to the corresponding controllable gated electronic components.

Abstract: Certain electronic applications, such as OLED display back panels, require small islands of high-quality semiconductor material distributed over a large area. This area can exceed the areas of crystalline semiconductor wafers that can be fabricated using the traditional boule-based techniques. This specification provides a method of fabricating a crystalline island of an island material, the method comprising depositing particles of the island material abutting a substrate, heating the substrate and the particles of the island material to melt and fuse the particles to form a molten globule, and cooling the substrate and the molten globule to crystallize the molten globule, thereby securing the crystalline island of the island material to the substrate. The method can also be used to fabricate arrays of crystalline islands, distributed over a large area, potentially exceeding the areas of crystalline semiconductor wafers that can be fabricated using boule-based techniques.

Abstract: Certain electronic applications, such as OLED display back panels, require small islands of high-quality semiconductor material distributed over a large area. This area can exceed the areas of crystalline semiconductor wafers that can be fabricated using the traditional boule-based techniques. This specification provides a method of fabricating a crystalline island of an island material, the method comprising depositing particles of the island material abutting a substrate, heating the substrate and the particles of the island material to melt and fuse the particles to form a molten globule, and cooling the substrate and the molten globule to crystallize the molten globule, thereby securing the crystalline island of the island material to the substrate. The method can also be used to fabricate arrays of crystalline islands, distributed over a large area, potentially exceeding the areas of crystalline semiconductor wafers that can be fabricated using boule-based techniques.

Abstract: As a cost effective alternative to lithography, there is provided a method of forming an electronic device comprising the steps of: depositing a first quantity of a first liquid medium comprising a dopant on a first portion of a planar surface and depositing a second quantity of the first liquid medium on a second portion of the surface, the first quantity spaced from the second quantity by a gap; heating the first quantity, the second quantity, and the surface, the heating configured to cause diffusion of at least some of the dopant from the first liquid medium into the surface; depositing a dielectric material on the surface in the gap; selectively removing the first quantity and the second quantity from the surface; depositing an electrical contact on each of the first portion and the second portion; and depositing a further electrical contact on the dielectric material.

Abstract: Certain electronic applications, such as OLED display back panels, require small islands of high-quality semiconductor material distributed over a large area. This area can exceed the areas of crystalline semiconductor wafers that can be fabricated using the traditional boule-based techniques. This specification provides a method of fabricating a crystalline island of an island material, the method comprising depositing particles of the island material abutting a substrate, heating the substrate and the particles of the island material to melt and fuse the particles to form a molten globule, and cooling the substrate and the molten globule to crystallize the molten globule, thereby securing the crystalline island of the island material to the substrate. The method can also be used to fabricate arrays of crystalline islands, distributed over a large area, potentially exceeding the areas of crystalline semiconductor wafers that can be fabricated using boule-based techniques.

Abstract: There is provided a method of forming an active matrix electro-optical device, the method comprising providing a backplane comprising: a backplane substrate; a semiconductor particle formed separately from the backplane substrate and then fixed upon the backplane substrate at a predetermined position; the semiconductor particle planarized to remove portions of the semiconductor particle and to expose at a cross-section of the semiconductor particle a planar surface; and a controllable gated electronic component on or directly beneath the planar surface, the controllable gated electronic component configured to control one or more pixels of the electro-optical device. The method also comprises providing an optical portion comprising one or more pixel regions, the optical portion electrically connected to the backplane such that at least one of the pixel regions of the optical portion is electrically connected to the controllable gated electronic component.

Abstract: Certain electronic applications, such as OLED display back panels, require small islands of high-quality semiconductor material distributed over a large area. This area can exceed the areas of crystalline semiconductor wafers that can be fabricated using the traditional boule-based techniques. This specification provides a method of fabricating a crystalline island of an island material, the method comprising depositing particles of the island material abutting a substrate, heating the substrate and the particles of the island material to melt and fuse the particles to form a molten globule, and cooling the substrate and the molten globule to crystallize the molten globule, thereby securing the crystalline island of the island material to the substrate. The method can also be used to fabricate arrays of crystalline islands, distributed over a large area, potentially exceeding the areas of crystalline semiconductor wafers that can be fabricated using boule-based techniques.

Abstract: There is provided a method of forming an active matrix electro-optical device, the method comprising providing a backplane comprising: a backplane substrate; a semiconductor particle formed separately from the backplane substrate and then fixed upon the backplane substrate at a predetermined position; the semiconductor particle planarized to remove portions of the semiconductor particle and to expose at a cross-section of the semiconductor particle a planar surface; and a controllable gated electronic component on or directly beneath the planar surface, the controllable gated electronic component configured to control one or more pixels of the electro-optical device. The method also comprises providing an optical portion comprising one or more pixel regions, the optical portion electrically connected to the backplane such that at least one of the pixel regions of the optical portion is electrically connected to the controllable gated electronic component.

Abstract: A device and method of fabricating a device in the form of an array of planarized particles of single crystal silicon or poly crystal silicon wherein the planar surfaces of the particles is used to fabricate an array of electronic devices. This is particularly useful in the manufacture of large displays where single crystal high speed devices are required. The planar surfaces of the array of devices are coplanar when the array is fabricated on a planar substrate.

Abstract: Certain electronic applications, such as OLED display back panels, require small islands of high-quality semiconductor material distributed over a large area. This area can exceed the areas of crystalline semiconductor wafers that can be fabricated using the traditional boule-based techniques. This specification provides a method of fabricating a crystalline island of an island material, the method comprising depositing particles of the island material abutting a substrate, heating the substrate and the particles of the island material to melt and fuse the particles to form a molten globule, and cooling the substrate and the molten globule to crystallize the molten globule, thereby securing the crystalline island of the island material to the substrate. The method can also be used to fabricate arrays of crystalline islands, distributed over a large area, potentially exceeding the areas of crystalline semiconductor wafers that can be fabricated using boule-based techniques.

Abstract: Methods and systems to manufacture a semi-conducting backplane are described. According to one set of implementations, semi-conducting particles are positioned in a supporting material of the semi-conducting backplane utilizing perforations in the supporting material or perforations in a removable support member upon which the semi-conducting backplane is constructed. For example, semi-conducting particles are deposited in perforations on a supporting member such that a portion of the semi-conducting particles protrudes from the supporting member. Suction is applied to the semi-conducting particles to retain the semi-conducting particles in the perforations and a layer of encapsulant material is applied onto the supporting member to cover the protruding portion. The supporting member is then removed from the semi-conducting particles and the layer of encapsulant material, which together form an assembly of the semi-conducting particles and the layer of encapsulant material.

Abstract: Methods and systems to manufacture a semi-conducting backplane are described. According to one set of implementations, semi-conducting particles are positioned in a supporting material of the semi-conducting backplane utilizing perforations in the supporting material or perforations in a removable support member upon which the semi-conducting backplane is constructed. For example, semi-conducting particles are deposited in perforations on a supporting member such that a portion of the semi-conducting particles protrudes from the supporting member. Suction is applied to the semi-conducting particles to retain the semi-conducting particles in the perforations and a layer of encapsulant material is applied onto the supporting member to cover the protruding portion. The supporting member is then removed from the semi-conducting particles and the layer of encapsulant material, which together form an assembly of the semi-conducting particles and the layer of encapsulant material.

Abstract: A device and method of fabricating a device in the form of an array of planarized particles of single crystal silicon or poly crystal silicon wherein the planar surfaces of the particles is used to fabricate an array of electronic devices. This is particularly useful in the manufacture of large displays where single crystal high speed devices are required. The planar surfaces of the array of devices are coplanar when the array is fabricated on a planar substrate.

Abstract: The present invention relates to coupling high power optical sources into small diameter optical fibers. In a first embodiment, an optical source is provided to the side of a fiber. The fiber is a single mode fiber, which has a cladding and a core, with a Bragg grating written into the core at a low angle. Light emitted from the optical source is index-match coupled into the cladding by using an index-matched element, and subsequently coupled into the fiber core along its length. Alternatively, the light is launched into an end of a larger diameter fiber with a mode reducing means, e.g. long period grating, therein for directing the light into the small diameter fiber.

Abstract: A pixel includes a photon detecting element coupled between a node and a ground, a transistor structure coupled between the node and a first predetermined voltage to provide a logarithmic response region, and a reset transistor coupled between the node and a second predetermined voltage to provide a linear response region where the second predetermined voltage is greater than the first predetermined voltage.

Abstract: A new electro-optic sampling probe with femtosecond resolution suitable for ultra-fast electro-optic sampling. The new probe is several times thinner and has a dielectric constant four times less than the best reported conventional bulk LiTaO.sub.3 probes. In addition, the ultimate bandwidth is 50 percent greater than an equivalent LiTaO.sub.3 probe. The probe is a thin film of Al.sub.x Ga.sub.1-x As used in both total internally reflecting and free-standing geometries. Here x is chosen for sufficient transmission of the crystal to the wavelength of the laser source being used for electro-optic sampling. The thickness of the film is a small fraction of the thickness of prior art probes and is chosen, for speed and sensitivity of electro-optic sampling, to be thin compared to the spatial extent of the laser pulse. The thin film probe eliminates many of the problems associated with the use of bulk crystals as electro-optic sensors.