Abstract: Apparatuses capable of and techniques for detecting long wavelength radiation are provided.

Abstract: Apparatuses capable of and techniques for detecting long wavelength radiation are provided.

Abstract: Techniques for determining and a computing device configured to determine a quantum Karnaugh map through decomposing a quantum circuit into a multiple number of sub-circuits are provided. Also, techniques for obtaining and a computing device configured to obtain a quantum circuit which includes the minimum number of gates among possible quantum circuits corresponding to a quantum Karnaugh map are also provided.

Abstract: Implementations and techniques for coupled asymmetric quantum confinement structures are generally disclosed.

Abstract: Apparatuses capable of and techniques for detecting long wavelength radiation are provided.

Abstract: Apparatuses capable of and techniques for detecting the visible light spectrum are provided.

Abstract: Implementations and techniques for coupled asymmetric quantum confinement structures are generally disclosed.

Abstract: Compound semiconductors capable of emitting light in the green spectrum are provided. The compound semiconductors may display improved quantum efficiencies when applied to various optical devices. Also, light emitting diodes and light emitting diode modules comprising the compound semiconductors are provided.

Abstract: Techniques for determining and a computing device configured to determine a quantum Karnaugh map through decomposing a quantum circuit into a multiple number of sub-circuits are provided. Also, techniques for obtaining and a computing device configured to obtain a quantum circuit which includes the minimum number of gates among possible quantum circuits corresponding to a quantum Karnaugh map are also provided.

Abstract: A health monitoring system includes a waveguide that receives a wave transmitted from an external power source and that guides the wave to reach within a width of a rectenna. The waveguide may include a negative refractive index medium and/or a surface plasmon medium.

Abstract: Implementations and techniques for coupled asymmetric quantum confinement structures are generally disclosed.

Abstract: Devices, methods, and techniques for frequency-dependent optical switching are provided. In one embodiment, a device includes a substrate, a first optical-field confining structure located on the substrate, a second optical-field confining structure located on the substrate, and a composite structure located between the first and second optical-field confining structures. The second optical-field confining structure may be spaced apart from the first optical-field confining structure. The composite structure may include an embedding structure with a surface to receive photons and multiple quantum structures located in the embedding structure.

Abstract: Techniques for determining and a computing device configured to determine a quantum Karnaugh map through decomposing a quantum circuit into a multiple number of sub-circuits are provided. Also, techniques for obtaining and a computing device configured to obtain a quantum circuit which includes the minimum number of gates among possible quantum circuits corresponding to a quantum Karnaugh map are also provided.

Abstract: Implementations and techniques for coupled asymmetric quantum confinement structures are generally disclosed.

Abstract: Implementations and techniques for coupled asymmetric quantum confinement structures are generally disclosed.

Abstract: Implementations and techniques for semiconductor light-emitting devices including one or more copper blend I-VII compound semiconductor material barrier layers are generally disclosed.

Abstract: Semiconductor emitting devices that offset stresses applied to a quantum well region and reduce internal fields due to spontaneous and piezoelectric polarizations are disclosed. In one embodiment, a semiconductor emitting device includes a quantum well region comprising an active layer that emits light and at least one barrier layer disposed adjacent the active layer, a means for impressing an electric field across the quantum well region to inject carriers into the quantum well region, and a means for impressing an offset electric field across the quantum well region to offset the polarization field formed in the quantum well region.

Abstract: Implementations of quantum well photodetectors are provided. In one embodiment, a quantum structure includes a first barrier layer, a well layer located on the first barrier layer, and a second barrier layer located on the well layer. A metal layer is located adjacent to the quantum structure.

Abstract: Light-electricity conversion devices based on II-VI semiconductor materials are provided. The light-electricity conversion devices are able to cover a wide spectrum range.

Abstract: Semiconductor devices including a light emitting layer, and at least one surface plasmon metal layer in contact with the light emitting layer are provided. The light emitting layer includes an active layer having a first band gap, and one or more barrier layers having a second band gap. The first band gap is smaller than the second band gap. Methods for fabricating semiconductor devices are also provided.