Abstract: Implementations and techniques for semiconductor light-emitting devices including one or more copper blend I-VII compound semiconductor material barrier layers are generally disclosed.

Abstract: Magnetic field detection techniques and devices are provided. In one embodiment, a device configured to detect a magnetic field includes a first set of nano-magnets and a second set of nano-magnets. The first set of nano-magnets is operable to induce a RF magnetic field, and the second set of nano-magnets is operable to induce a first electrical signal in response to magnetic resonance signals caused by the RF magnetic field.

Abstract: Semiconductor devices including a light emitting layer, and at least one surface plasmon metal layer in contact with the light emitting layer are provided. The light emitting layer includes an active layer having a first band gap, and one or more barrier layers having a second band gap. The first band gap is smaller than the second band gap. Methods for fabricating semiconductor devices are also provided.

Abstract: Implementations of quantum well photovoltaic devices are provided. In one embodiment, a photovoltaic device includes an active layer that includes a first barrier layer, a well layer located on the first barrier layer and made of a nitride semiconductor, and a second barrier layer located on the well layer. A metal layer is located adjacent to the active layer.

Abstract: Devices, methods, and techniques for frequency-dependent optical switching are provided. In one embodiment, a device includes a substrate, a first optical-field confining structure located on the substrate, a second optical-field confining structure located on the substrate, and a composite structure located between the first and second optical-field confining structures. The second optical-field confining structure may be spaced apart from the first optical-field confining structure. The composite structure may include an embedding structure with a surface to receive photons and multiple quantum structures located in the embedding structure.

Abstract: Apparatuses capable of and techniques for detecting the visible light spectrum are provided.

Abstract: Compound semiconductors capable of emitting light in the green spectrum are provided. The compound semiconductors may display improved quantum efficiencies when applied to various optical devices. Also, light emitting diodes and light emitting diode modules comprising the compound semiconductors are provided.

Abstract: Apparatuses capable of and techniques for detecting long wavelength radiation are provided.

Abstract: Semiconductor emitting devices that offset stresses applied to a quantum well region and reduce internal fields due to spontaneous and piezoelectric polarizations are disclosed. In one embodiment, a semiconductor emitting device includes a quantum well region comprising an active layer that emits light and at least one barrier layer disposed adjacent the active layer, a means for impressing an electric field across the quantum well region to inject carriers into the quantum well region, and a means for impressing an offset electric field across the quantum well region to offset the polarization field formed in the quantum well region.

Abstract: Light-electricity conversion devices based on II-VI semiconductor materials are provided. The light-electricity conversion devices are able to cover a wide spectrum range.

Abstract: Laminated structures having improved optical gain are provided. In one embodiment, a laminated structure includes a first cladding layer having at least two barrier layers which have different energy band gaps, an active layer formed on the first cladding layer and having an active layer energy band gap, and a second cladding layer formed on the active layer and including at least two barrier layers which have different energy band gaps. The first cladding layer and the second cladding layer may be doped with a different type of dopant.

Abstract: Implementations of quantum well photodetectors are provided.

Abstract: Implementations of quantum well photodetectors are provided. In one embodiment, a quantum structure includes a first barrier layer, a well layer located on the first barrier layer, and a second barrier layer located on the well layer. A metal layer is located adjacent to the quantum structure.

Abstract: Devices, methods, and techniques for frequency-dependent optical switching are provided. In one embodiment, a device includes a substrate, a first and a second optical-field confining structures located on the substrate, and a quantum structure disposed between the first and the second optical-field confining structures. The first optical-field confining structure may include a surface to receive photons. The second optical-field confining structure may be spaced apart from the first optical-field confining structure. The first and the second optical-field confining structures may be configured to substantially confine therebetween an optical field of the photons.

Abstract: Semiconductor devices having strong excitonic binding are disclosed. In some embodiments, a semiconductor device includes at least one active layer composed of a first compound, and at least one barrier layer composed of a second compound and disposed on at least one surface of the at least one active layer. An energy band gap of the at least one barrier layer is wider than energy band gap of the at least one active layer, and the first and/or second compounds are selected to strengthen an excitonic binding between an electron and a hole in the at least one active layer.

Abstract: Semiconductor devices having at least one barrier layer are disclosed. In some embodiments, a semiconductor device includes an active layer and one or more barrier layers disposed on either one side or both sides of the active layer. The active layer may be composed of a first compound semiconductor material, and the one or more barrier layers may be composed of a second compound semiconductor material. In some embodiments, the composition of the one or more barrier layers may be adjusted to increase an optical dipole matrix element.

Abstract: A device that includes a signal generating unit having a surface that can receive photons, a first metal structure located on the surface of the signal generating unit, and a second metal structure located on the surface of the signal generating unit. The second metal structure being spaced apart from the first metal structure.

Abstract: Semiconductor devices having at least one barrier layer with a wide energy band gap are disclosed. In some embodiments, a semiconductor device includes at least one active layer, and at least one barrier layer disposed on at least one surface of the at least one active layer. The at least one barrier layer has a wider energy band gap than the energy band gap of the at least one active layer. The compounds of the active layer and the barrier layer may be selected to reduce relaxation time of an electron or hole in the active layer.

Abstract: Piezoelectric actuators having a piezoelectric layer in which a cantilever portion is formed are disclosed. In one embodiment, an actuator includes a support layer and a piezoelectric layer. The piezoelectric layer may include a supported portion formed on the support layer and a cantilever portion which extends beyond the support layer.

Abstract: Semiconductor devices having at least one barrier layer with a wide energy band gap are disclosed. In some embodiments, a semiconductor device includes at least one active layer composed of a first compound, and at least one barrier layer composed of a second compound and disposed on at least one surface of the at least one active layer. The at least one barrier layer may have a wider energy band gap than an energy band gap of the at least one active layer. The compositions of the first and second compounds may be controlled to adjust the difference between Fermi functions for conduction band and valence band in the at least one active layer.