Patents by Inventor Doyeol Ahn

Doyeol Ahn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • HIGH-ELECTRON MOBILITY TRANSISTOR
    Publication number: 20100270591
    Abstract: Disclosed are high electron mobility transistors (HEMTs). In some embodiments, a HEMT includes a channel layer composed of a first compound semiconductor material and one or more barrier layers disposed on either one side or both sides of the channel layer and composed of a second compound semiconductor material.
    Type: Application
    Filed: April 27, 2009
    Publication date: October 28, 2010
    Applicant: University of Seoul Industry Cooperation Foundation
    Inventor: Doyeol AHN
  • NANOMETER SCALE MAGNETIZATION
    Publication number: 20100053808
    Abstract: Magnetic heads for perpendicular magnetic recording on magnetic recording media are provided.
    Type: Application
    Filed: August 28, 2008
    Publication date: March 4, 2010
    Applicant: UNIVERSITY OF SEOUL INDUSTRY COOPERATION FOUNDATION
    Inventors: Doyeol Ahn, Hyung Kwon Kim
  • MAGNETIC CARRIER MANIPULATION AND DETECTION USING A NANOMETER SCALE TRANSFORMER
    Publication number: 20100039107
    Abstract: A nanometer scale transformer configured to manipulate and detect a magnetic carrier is provided.
    Type: Application
    Filed: August 14, 2008
    Publication date: February 18, 2010
    Applicant: UNIVERSITY OF SEOUL INDUSTRY COOPERATION FOUNDATION
    Inventors: Doyeol AHN, Hyung Kwon Kim
  • OPTOELECTRONIC DEVICES
    Publication number: 20100040102
    Abstract: Optoelectronic devices are provided. In one embodiment, a device may include a first conductivity type cladding layer including a first barrier layer, an active layer formed on the first conductivity-type cladding layer, the active layer including a well layer made of a nitride semiconductor, and a second conductivity-type cladding layer formed on the active layer and including a second barrier layer. The active layer is positioned between and adjacent to the first barrier layer and the second barrier layer.
    Type: Application
    Filed: August 14, 2008
    Publication date: February 18, 2010
    Applicant: UNIVERSITY OF SEOUL INDUSTRY COOPERATION FOUNDATION
    Inventor: Doyeol AHN
  • Universal quantum gate
    Patent number: 7655850
    Abstract: Universal quantum gates that include single qubit and two-qubit gates are provided.
    Type: Grant
    Filed: August 26, 2008
    Date of Patent: February 2, 2010
    Assignee: University of Seoul Industry Cooperation Foundation
    Inventor: Doyeol Ahn