Abstract: A system for scanning an object, the system may include (a) charged particles optics that is configured to: scan, with a charged particle beam and at a first scan rate, a first region of interest (ROI) of an area of the object; detect first particles that were generated as a result of the scanning of the first ROI; scan, with the charged particle beam and at a second scan rate, a second ROI of the area of the object; wherein the second scan rate is lower than the first scan rate; wherein first ROI differs from the second ROI by at least one parameter; detect second particles that were generated as a result of the scanning of the second ROA; and (b) a processor that is configured to generate at least one image of the area in response to the first and second particles.

Abstract: A system for scanning an object, the system may include (a) charged particles optics that is configured to: scan, with a charged particle beam and at a first scan rate, a first region of interest (ROI) of an area of the object; detect first particles that were generated as a result of the scanning of the first ROI; scan, with the charged particle beam and at a second scan rate, a second ROI of the area of the object; wherein the second scan rate is lower than the first scan rate; wherein first ROI differs from the second ROI by at least one parameter; detect second particles that were generated as a result of the scanning of the second ROA; and (b) a processor that is configured to generate at least one image of the area in response to the first and second particles.

Abstract: An apparatus is disclosed for forming a sample of an object, extracting the sample from the object, and subjecting this sample to microanalysis including surface analysis and electron transparency analysis in a vacuum chamber. In some embodiments, a means is provided for imaging an object cross section surface of an extracted sample. Optionally, the sample is iteratively thinned and imaged within the vacuum chamber. In some embodiments, the sample is situated on a sample support including an optional aperture. Optionally, the sample is situated on a surface of the sample support such that the object cross section surface is substantially parallel to the surface of the sample support. Once mounted on the sample support, the sample is either subjected to microanalysis in the vacuum chamber, or loaded onto a loading station. In some embodiments, the sample is imaged with an electron beam substantially normally incident to the object cross section surface.

Abstract: A method and a system for obtaining an image of a cross section of a specimen, the method includes: milling the specimen so as to expose a cross section of the specimen, in which the cross section comprises at least one first portion made of a first material and at least one second portion made of a second material; smoothing the cross section; performing gas assisted etching of the cross section so as generate a topography difference between the at least one first portion and the at least one second portion of the cross section; coating the cross section with a thin layer of conductive material; and obtaining an image of the cross section; wherein the milling, smoothing, performing, coating and obtaining are performed while the specimen is placed in a vacuum chamber.

Abstract: A method for evaluating a cleanliness of a tool, the method includes: receiving a wafer; cleaning the wafer; placing the wafer into the tool for a predefined period; removing the wafer from the tool, performing a contact angle measurement and determining the cleanliness of the wafer.

Abstract: A method for improving the resolution of a scanning electron microscope, the method including: defining an energy band in response to an expected penetration depth of secondary electrons in an object; illuminating the object with a primary electron beam; and generating images from electrons that arrive at a spectrometer having an energy within the energy band. A scanning electron microscope that includes: a stage for supporting an object; a controller, adapted to receive or define an energy band an energy band in response to an expected penetration depth of secondary electrons in an object; illumination optics adapted to illuminate the object with a primary electron beam; a spectrometer; controlled by the controller so as to selectively reject electrons in response to the defined energy band; and a processor that is adapted to generate images from detection signals provided by the spectrometer.

Abstract: A system for providing a compensated Auger spectrum, the system includes: a processor, adapted to generate a compensated Auger spectrum in response to a non-compensated Auger spectrum and in response to an electric potential related parameter, and an interface to an electron detector that is adapted to detect electrons emitted from the first area, wherein the interface is connected to the processor, and wherein the electric potential related parameter reflects a state of a first area of an object that was illuminated by a charged particle beam during the generation of the non-compensated Auger spectrum.

Abstract: A system and method for multi detector detection of electrons, the method includes the steps of directing a primary electron beam, through a column, to interact with an inspected object, directing, by introducing a substantial electrostatic field, electrons reflected or scattered from the inspected objects towards multiple interior detectors, whereas at least some of the directed electrons are reflected or scattered at small angle in relation to the inspected object; and receiving detection signals from at least one interior detector.

Abstract: A charged particle detector assembly comprises a particle detector, which has at least one particle sensitive region for detecting at least a portion of the spatial distribution of charged particles and for generating a two-dimensional optical signal which correlates to the detected spatial distribution. Further, an image conduit has an input coupled to the particle sensitive region of the particle detector for transmitting the two-dimensional optical signal to at least one optical detector. Further, a selecting means is adapted for selecting at least a portion of the two-dimensional optical signal.

Abstract: A charged particle beam apparatus is provided, which comprises a charged particle beam column for generating a primary charged particle beam; a focusing assembly, such as a charged particle lens, e.g., an electrostatic lens, for focusing the primary charged particle beam on a specimen; a detector for detecting charged signal particles which are emerging from the specimen; and a deflector arrangement for deflecting the primary charged particle beam. The deflector arrangement is arranged downstream of the focusing assembly and is adapted for allowing the charged signal particles passing therethrough. The detector is laterally displaced with respect to the optical axis in a deflection direction defined by the post-focusing deflector arrangement.

Abstract: A method for detecting hidden defects and patterns, the method includes: receiving an object that comprises an opaque layer positioned above an intermediate layer; defining an energy band in response to at least one characteristic of the opaque layer and at least one characteristic of a scanning electron microscope; illuminating the object with a primary electron beam; and generating images from electrons that arrive to a spectrometer having an energy within the energy band.

Abstract: A system and method for generating a thin sample, the method includes: milling an intermediate section of a thin sample such as to enable an upper portion of the thin sample to tilt in relation to a lower portion of the thin sample; wherein the lower portion is connected to a wafer from which the thin sample was formed. A system and method for inspecting a thin sample, the method includes: A method for inspecting a thin sample, the method comprising: illuminating, by a charged particle beam, a tilted upper portion of a thin sample that is connected, via a milled intermediate section, to a lower portion of the thin sample; wherein the lower portion is connected to a wafer from which the thin sample was formed; and collecting particles and photons resulting from the illumination.

Abstract: A system and method for generating a thin sample, the method includes: milling an intermediate section of a thin sample such as to enable an upper portion of the thin sample to tilt in relation to a lower portion of the thin sample; wherein the lower portion is connected to a wafer from which the thin sample was formed. A system and method for inspecting a thin sample, the method includes: A method for inspecting a thin sample, the method comprising: illuminating, by a charged particle beam, a tilted upper portion of a thin sample that is connected, via a milled intermediate section, to a lower portion of the thin sample; wherein the lower portion is connected to a wafer from which the thin sample was formed; and collecting particles and photons resulting from the illumination.

Abstract: A method and a system for obtaining an image of a cross section of a specimen, the method includes: milling the specimen so as to expose a cross section of the specimen, whereas the cross section comprises at least one first portions made of a first material and at least one second portion made of a second material; smoothing the cross section; performing gas assisted etching of the cross section so as generate a topography difference between the at least one first portion and the at least one second portion of the cross section; coating the cross section with a thin layer of conductive material; and obtaining an image of the cross section; wherein the milling, smoothing, performing, coating and obtaining are preformed while the specimen is placed in a vacuumed chamber.

Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partly conductive and a second layer formed over the first layer, following production of contact openings in the second layer. A beam of charged particles is directed along a beam axis that deviates substantially in angle from a normal to a surface of the sample, so as to irradiate one or more of the contact openings in each of a plurality of locations distributed over at least a region of the sample. A specimen current flowing through the first layer is measured in response to irradiation of the one or more of the contact openings at each of the plurality of locations. A map of at least the region of the sample is created, indicating the specimen current measured in response to the irradiation at the plurality of the locations.

Abstract: A charged particle beam apparatus is provided, which comprises a charged particle beam column for generating a primary charged particle beam; a focusing assembly, such as a charged particle lens, e.g., an electrostatic lens, for focusing the primary charged particle beam on a specimen; a detector for detecting charged signal particles which are emerging from the specimen; and a deflector arrangement for deflecting the primary charged particle beam. The deflector arrangement is arranged downstream of the focusing assembly and is adapted for allowing the charged signal particles passing therethrough. The detector is laterally displaced with respect to the optical axis in a deflection direction defined by the post-focusing deflector arrangement.

Abstract: A system for providing a compensated Auger spectrum, the system includes: a processor, adapted to generate a compensated Auger spectrum in response to a non-compensated Auger spectrum and in response to an electric potential related parameter; and an interface to a electron detector that is adapted to detect electrons emitted from the first area, wherein the interface is connected to the processor, and wherein the electric potential related parameter reflects a state of a first area of an object that was illuminated by a charged particle beam during the generation of the non-compensated Auger spectrum.

Abstract: A charged particle detector assembly comprises a particle detector, which has at least one particle sensitive region for detecting at least a portion of the spatial distribution of charged particles and for generating a two-dimensional optical signal which correlates to the detected spatial distribution. Further, an image conduit has an input coupled to the particle sensitive region of the particle detector for transmitting the two-dimensional optical signal to at least one optical detector. Further, a selecting means is adapted for selecting at least a portion of the two-dimensional optical signal.

Abstract: Systems and methods for process monitoring based upon X-ray emission induced by a beam of charged particles such as electrons or ions include a system and method for process monitoring that analyze a cavity before being filled and then analyze emitted X-rays from the cavity after the cavity has been filled with a conductive material. Also included are system and methods for process monitoring that apply a quantitative analysis correction technique on detected X-ray emissions.

Abstract: Systems and methods for process monitoring based upon X-ray emission induced by a beam of charged particles such as electrons or ions. Concept as expressed herein.