Abstract: Methods and apparatus are disclosed for forming a sample of an object, extracting the sample from the object, and subjecting this sample to microanalysis including surface analysis and electron transparency analysis in a vacuum chamber. In some embodiments, a method is provided for imaging an object cross section surface of an extracted sample. Optionally, the sample is iteratively thinned and imaged within the vacuum chamber. In some embodiments, the sample is situated on a sample support including an optional aperture. Optionally, the sample is situated on a surface of the sample support such that the object cross section surface is substantially parallel to the surface of the sample support. Once mounted on the sample support, the sample is either subjected to microanalysis in the vacuum chamber, or loaded onto a loading station. In some embodiments, the sample is imaged with an electron beam substantially normally incident to the object cross section surface.

Abstract: The invention provides a method for automatically aligning a beam of charged particles with an aperture. Thereby, the beam is defelcted to two edges of the aperture. From the signals required to obtain an extinction, a correction deflection field is calculated. Furter, a method for automatically aligning a beam of charged particles with an optical axis is provided. Thereby a defocusing is introduced and a signal calculated based on an introduced image shift is applied to a deflection unit. Further, a method for correction of the astigmatism is provided. Thereby the sharpness is evaluated for a sequence of frames measured whilst varying the signals to a stigmator.

Abstract: A inspection system includes: a lens arrangement adapted to generate a substantially symmetrical electrostatic field about an optical axis and to direct a primary electron beam towards an object that is oriented in relation to the optical axis at a non-normal angle; and at least on additional electrode, positioned outside the lens arrangement such as to increase symmetry of an electromagnetic field in the vicinity of an interaction point between the primary electron beam and the object.

Abstract: A method for detecting hidden defects and patterns, the method includes: receiving an object that comprises an opaque layer positioned above an intermediate layer; defining an energy band in response to at least one characteristic of the opaque layer and at least one characteristic of a scanning electron microscope; illuminating the object with a primary electron beam; and generating images from electrons that arrive to a spectrometer having an energy within the energy band.

Abstract: A method for improving the resolution of a scanning electron microscope, the method includes: defining an energy band in response to an expected penetration depth of secondary electrons in an object; illuminating the object with a primary electron beam; and generating images from electrons that arrive to a spectrometer having an energy within the energy band. A scanning electron microscope that includes: a stage for supporting an object; a controller, adapted to receive or define an energy band an energy band in response to an expected penetration depth of secondary electrons in an object; illumination optics adapted to illuminate the object with a primary electron beam; a spectrometer, controlled by the controller such as to selectively reject electrons in response to the defined energy band; and a processor that is adapted to generate images from detection signals provided by the spectrometer.

Abstract: An apparatus and method for fast changing a focal length of a charged particle beam the method comprising the step of changing a control signal in response to a relationship between the control signal voltage value and the focal length of the charged particle beam.

Abstract: A method for evaluating a cleanliness of a tool, the method includes: receiving a wafer; cleaning the wafer; placing the wafer into the tool for a predefined period; removing the wafer from the tool, performing a contact angle measurement and determining the cleanliness of the wafer.

Abstract: Systems and methods for process monitoring based upon X-ray emission induced by a beam of charged particles such as electrons or ions include a system and method for process monitoring that analyze a cavity before being filled and then analyze emitted X-rays from the cavity after the cavity has been filled with a conductive material. Also included are system and methods for process monitoring that apply a quantitative analysis correction technique on detected X-ray emissions.

Abstract: A system and method for multi detector detection of electrons, the method includes the steps of directing a primary electron beam, through a column, to interact with an inspected object, directing, by introducing a substantial electrostatic field, electrons reflected or scattered from the inspected objects towards multiple interior detectors, whereas at least some of the directed electrons are reflected or scattered at small angle in relation to the inspected object; and receiving detection signals from at least one interior detector.

Abstract: Systems and methods for process monitoring based upon X-ray emission induced by a beam of charged particles such as electrons or ions. Concept as expressed herein.

Abstract: Methods and apparatus are disclosed for forming a sample of an object, extracting the sample from the object, and subjecting this sample to microanalysis including surface analysis and electron transparency analysis in a vacuum chamber. In some embodiments, a method is provided for imaging an object cross section surface of an extracted sample. Optionally, the sample is iteratively thinned and imaged within the vacuum chamber. In some embodiments, the sample is situated on a sample support including an optional aperture. Optionally, the sample is situated on a surface of the sample support such that the object cross section surface is substantially parallel to the surface of the sample support. Once mounted on the sample support, the sample is either subjected to microanalysis in the vacuum chamber, or loaded onto a loading station. In some embodiments, the sample is imaged with an electron beam substantially normally incident to the object cross section surface.

Abstract: Methods and apparatus are disclosed for forming a sample of an object, extracting the sample from the object, and subjecting this sample to microanalysis including surface analysis and electron transparency analysis in a vacuum chamber. In some embodiments, a method is provided for imaging an object cross section surface of an extracted sample. Optionally, the sample is iteratively thinned and imaged within the vacuum chamber. In some embodiments, the sample is situated on a sample support including an optional aperture. Optionally, the sample is situated on a surface of the sample support such that the object cross section surface is substantially parallel to the surface of the sample support. Once mounted on the sample support, the sample is either subjected to microanalysis in the vacuum chamber, or loaded onto a loading station. In some embodiments, the sample is imaged with an electron beam substantially normally incident to the object cross section surface.

Abstract: An apparatus and a method for electrically testing a semiconductor wafer, the method including: (i) depositing electrical charges at certain points of a test pattern; (ii) scanning at least a portion of the test pattern such as to enhance charge differences resulting from defects; and (iii) collecting charged particles emitted from the at least scanned portion as a result of the scanning, thus providing an indication about an electrical state of the respective test structure.

Abstract: A system and method for reducing ion contamination in an object, the ion contamination introduced by a contaminating ion beam milling step. The system includes means for defining a suspected ion contaminated area; and means for removing the suspected ion contaminated area by a non-contaminating process, which usually involves directing an electron beam towards the removed area while allowing the beam to interact with additional material. The method includes the steps of defining a suspected ion contaminated area; and removing the suspected ion contaminated area by non-contaminating process.

Abstract: An apparatus and method for fast changing a focal length of a charged particle beam the method comprising the step of changing a control signal in response to a relationship between the control signal voltage value and the focal length of the charged particle beam.

Abstract: The invention provides a method for automatically aligning a beam of charged particles with an aperture. Thereby, the beam is defelcted to two edges of the aperture. From the signals required to obtain an extinction, a correction deflection field is calculated. Furter, a method for automatically aligning a beam of charged particles with an optical axis is provided. Thereby a defocusing is introduced and a signal calculated based on an introduced image shift is applied to a deflection unit. Further, a method for correction of the astigmatism is provided. Thereby the sharpness is evaluated for a sequence of frames measured whilst varying the signals to a stigmator.

Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partly conductive and a second layer formed over the first layer, following production of contact openings in the second layer. A beam of charged particles is directed along a beam axis that deviates substantially in angle from a normal to a surface of the sample, so as to irradiate one or more of the contact openings in each of a plurality of locations distributed over at least a region of the sample. A specimen current flowing through the first layer is measured in response to irradiation of the one or more of the contact openings at each of the plurality of locations. A map of at least the region of the sample is created, indicating the specimen current measured in response to the irradiation at the plurality of the locations.

Abstract: An apparatus and a method for electrically testing a semiconductor wafer, the method including: (i) depositing electrical charges at certain points of a test pattern; (ii) scanning at least a portion of the test pattern such as to enhance charge differences resulting from defects; and (iii) collecting charged particles emitted from the at least scanned portion as a result of the scanning, thus providing an indication about an electrical state of the respective test structure.

Abstract: A system and method for reducing ion contamination in an object, the ion contamination introduced by a contaminating ion beam milling step. The system includes means for defining a suspected ion contaminated area; and means for removing the suspected ion contaminated area by a non-contaminating process, which usually involves directing an electron beam towards the removed area while allowing the beam to interact with additional material. The method includes the steps of defining a suspected ion contaminated area; and removing the suspected ion contaminated area by non-contaminating process.

Abstract: A system and method for directing the object, such as a semiconductor die. The system includes a first images such as a scanning electron microscope, a stage for moving the object and a second imager and miller such as a focused ion beam generator. The object is images to locate a desired location in which the object is to be milled and a landmark that is utilized for directing the miller. The system can include additional steps of milling, analyzing and movement of the object.