Patents by Inventor Du Li

Du Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100077035
    Abstract: Methods and systems for optimizing server polling by a mobile client are described, thereby allowing mobile terminals to conserve battery life by more efficiently using resources such as the processor and transceiver in the mobile terminal. A broker system may be used to minimize wireless communication traffic used for polling. A broker stub intercepts server polling messages at the client, multiplexes the sever requests together, and forwards the multiplexed message to a broker skeleton that de-multiplexes and forwards the messages as appropriate. Polling may also be dynamically adapted based on user behavior, or a server guard may be used to monitor changes to data, and notify a client to poll its respective server when the server guard detects new or updated data on that server for that client.
    Type: Application
    Filed: September 23, 2008
    Publication date: March 25, 2010
    Applicant: NOKIA CORPORATION
    Inventors: Du Li, Umesh Chandra
  • Publication number: 20090268848
    Abstract: Various embodiments of the present invention provide systems and methods for media defect detection. For example, a data receiving system is disclosed that includes a data signal provided from a medium that may include a defective portion. An absolute value circuit receives the data signal and provides an output corresponding to an absolute value of the data signal. The output corresponding to the absolute value of the data signal is input to a filter that filters it and provides a filtered output. In some cases, the filter is a digital filter operable to integrate the absolute value of the data signal. A comparator receives the output from the filter and compares it with a threshold value. The result of the comparison indicates a defect status of the medium.
    Type: Application
    Filed: April 29, 2008
    Publication date: October 29, 2009
    Inventors: Weijun Tan, Shaohua Yang, George Mathew, Du Li
  • Publication number: 20090095997
    Abstract: Memory cell structures, including PSOIs, NANDs, NORs, FinFETs, etc., and methods of fabrication have been described that include a method of epitaxial silicon growth. The method includes providing a silicon layer on a substrate. A dielectric layer is provided on the silicon layer. A trench is formed in the dielectric layer to expose the silicon layer, the trench having trench walls in the <100> direction. The method includes epitaxially growing silicon between trench walls formed in the dielectric layer.
    Type: Application
    Filed: December 17, 2008
    Publication date: April 16, 2009
    Applicant: Micron Technology, Inc.
    Inventors: David H. Wells, Du Li
  • Patent number: 7498265
    Abstract: Memory cell structures, including PSOIs, NANDs, NORs, FinFETs, etc., and methods of fabrication have been described that include a method of epitaxial silicon growth. The method includes providing a silicon layer on a substrate. A dielectric layer is provided on the silicon layer. A trench is formed in the dielectric layer to expose the silicon layer, the trench having trench walls in the <100> direction. The method includes epitaxially growing silicon between trench walls formed in the dielectric layer.
    Type: Grant
    Filed: October 4, 2006
    Date of Patent: March 3, 2009
    Assignee: Micron Technology, Inc.
    Inventors: David H. Wells, Du Li
  • Publication number: 20080085587
    Abstract: Memory cell structures, including PSOIs, NANDs, NORs, FinFETs, etc., and methods of fabrication have been described that include a method of epitaxial silicon growth. The method includes providing a silicon layer on a substrate. A dielectric layer is provided on the silicon layer. A trench is formed in the dielectric layer to expose the silicon layer, the trench having trench walls in the <100> direction. The method includes epitaxially growing silicon between trench walls formed in the dielectric layer.
    Type: Application
    Filed: October 4, 2006
    Publication date: April 10, 2008
    Inventors: David H. Wells, Du Li
  • Patent number: 6697840
    Abstract: Presence awareness initiatives are implemented in a collaborative system that enables a user to set presence awareness policies, and that provides a reasonably high assurance that the system will correctly implement those policies. Specifically, the collaborative presence awareness system is such as to enable users to specify complex presence awareness policies. The presence awareness system is also such as to have been verified by employing systematic state-space exploration tools to establish a high level of assurance that the presence awareness system has the capability to implement correctly, substantially all possible presence awareness policies. Further, in accordance with another aspect of the invention, the presence awareness policy specifications are modular relative to the rest of the presence awareness system, and can be modified without having to modify computational modules or user interface program code of the presence awareness system.
    Type: Grant
    Filed: February 29, 2000
    Date of Patent: February 24, 2004
    Assignee: Lucent Technologies Inc.
    Inventors: Patrice Ismael Godefroid, James David Herbsleb, Lalita Jategaonkar Jagadeesan, Du Li
  • Patent number: 6194720
    Abstract: A sectional transmission electron microscope (TEM) specimen and a method of forming the same is provided. The specimen includes two separate electron transparent regions, namely a first electron transparent segment for analyzing a specific feature and a second electron transparent segment for analyzing bulk features. The first electron transparent segment is formed using a focused ion beam (FIB) technique, while the second electron transparent segment is formed by a wedge forming technique. The latter step is carried out by protecting the first segment with an adhesive filler and a covering glass layer, polishing a surface of the specimen at an angle to an opposite surface, while simultaneously exposing the previously formed first segment, and removing the filler and glass layer.
    Type: Grant
    Filed: June 24, 1998
    Date of Patent: February 27, 2001
    Assignee: Micron Technology, Inc.
    Inventors: Du Li, Rose Zou