Patents by Inventor Durai Vishak Nirmal Ramaswamy

Durai Vishak Nirmal Ramaswamy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10388871
    Abstract: Some embodiments include a method of forming a memory cell. A first portion of a switching region is formed over a first electrode. A second portion of the switching region is formed over the first portion using atomic layer deposition. The second portion is a different composition than the first portion. An ion source region is formed over the switching region. A second electrode is formed over the ion source region. Some embodiments include a memory cell having a switching region between a pair of electrodes. The switching region is configured to be reversibly transitioned between a low resistive state and a high resistive state. The switching region includes two or more discrete portions, with one of the portions not having a non-oxygen component in common with any composition directly against it in the high resistive state.
    Type: Grant
    Filed: October 25, 2016
    Date of Patent: August 20, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Shuichiro Yasuda, Noel Rocklein, Scott E. Sills, Durai Vishak Nirmal Ramaswamy, Qian Tao
  • Patent number: 10388658
    Abstract: A transistor comprises semiconductor material that is generally L-shaped or generally mirror L-shaped in at least one straight-line vertical cross-section thereby having an elevationally-extending stem and a base extending horizontally from a lateral side of the stem above a bottom of the stem. The semiconductor material of the stem comprises an upper source/drain region and a channel region there-below. The transistor comprises at least one of (a) and (b), where (a): the semiconductor material of the stem comprises a lower source/drain region below the channel region, and (b): the semiconductor material of the base comprises a lower source/drain region. A gate is operatively laterally adjacent the channel region of the stem. Other embodiments are disclosed, including arrays of memory cells individually comprising a capacitor and an elevationally-extending transistor. Methods are disclosed.
    Type: Grant
    Filed: April 27, 2018
    Date of Patent: August 20, 2019
    Assignee: Micron Technology, Inc.
    Inventor: Durai Vishak Nirmal Ramaswamy
  • Patent number: 10381363
    Abstract: A method for forming a string of memory cells, a memory device having a string of memory cells, and a system are disclosed. The string of memory cells can include a string of planar memory cells formed as recesses in each of a plurality of control gate material formed as a vertical stack of alternating insulator and control gate material. The recesses can be lined with a dielectric material and filled with a floating gate material. Metal nano-particles can be formed on a surface of the floating gate material and/or infused into the floating gate material.
    Type: Grant
    Filed: May 8, 2015
    Date of Patent: August 13, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Fatma Arzum Simsek-Ege, Akira Goda, Durai Vishak Nirmal Ramaswamy
  • Publication number: 20190245096
    Abstract: A transistor comprises a pair of source/drain regions having a channel there-between. A transistor gate construction is operatively proximate the channel. The channel comprises Si1-yGey, where “y” is from 0 to 0.6. At least a portion of each of the source/drain regions comprises Si1-xGex, where “x” is from 0.5 to 1. Other embodiments, including methods, are disclosed.
    Type: Application
    Filed: February 6, 2018
    Publication date: August 8, 2019
    Applicant: Micron Technology, Inc.
    Inventor: Durai Vishak Nirmal Ramaswamy
  • Publication number: 20190214390
    Abstract: A method of forming an array of cross point memory cells comprises using two, and only two, masking steps to collectively pattern within the array spaced lower first lines, spaced upper second lines which cross the first lines, and individual programmable devices between the first lines and the second lines where such cross that have an upwardly open generally U-shape vertical cross-section of programmable material laterally between immediately adjacent of the first lines beneath individual of the upper second lines. Arrays of cross point memory cells independent of method of manufacture are disclosed.
    Type: Application
    Filed: March 18, 2019
    Publication date: July 11, 2019
    Applicant: Micron Technology, Inc.
    Inventor: Durai Vishak Nirmal Ramaswamy
  • Publication number: 20190212919
    Abstract: Methods, systems, and devices for a hybrid memory device are described. The hybrid memory device may include volatile and non-volatile memory cells on a single substrate, or die. The non-volatile memory cells may have ferroelectric capacitors and the volatile memory cells may have paraelectric or linear dielectric capacitors for their respective logic storage components. In some examples, the volatile memory cells may be used as a cache for the non-volatile memory cells. Or the non-volatile memory cells may be used as a back-up for the volatile memory cells. By placing both types of cells on a single die, rather than separate dies, various performance metrics may be improved, including those related to power consumption and operation speed.
    Type: Application
    Filed: March 19, 2019
    Publication date: July 11, 2019
    Inventors: Kevin J. Ryan, Kirk D. Prall, Durai Vishak Nirmal Ramaswamy, Robert Quinn
  • Patent number: 10340331
    Abstract: A method of forming an array of capacitors comprises forming elevationally-extending and longitudinally-elongated capacitor electrode lines over a substrate. Individual of the capacitor electrode lines are common to and a shared one of two capacitor electrodes of individual capacitors longitudinally along a line of capacitors being formed. A capacitor insulator is formed over a pair of laterally-opposing sides of and longitudinally along individual of the capacitor electrode lines. An elevationally-extending conductive line is formed over the capacitor insulator longitudinally along one of the laterally-opposing sides of the individual capacitor electrode lines. The conductive line is cut laterally through to form spaced individual other of the two capacitor electrodes of the individual capacitors. Other methods are disclosed, including structures independent of method of manufacture.
    Type: Grant
    Filed: July 25, 2018
    Date of Patent: July 2, 2019
    Assignee: Micron Technology, Inc.
    Inventor: Durai Vishak Nirmal Ramaswamy
  • Publication number: 20190198512
    Abstract: Various embodiments comprise apparatuses and methods of forming the apparatuses. In one embodiment, an exemplary apparatus includes a plurality of memory cells. At least a portion of the memory cells have a bottom electrode with each bottom electrode being at least partially electrically isolated from remaining ones of the bottom electrodes. At least one resistive interconnect electrically couples two or more of the bottom electrodes. The resistive interconnect is arranged to discharge at least a portion of excess charge from the two or more bottom electrodes. Additional apparatuses and methods of forming the apparatuses are disclosed.
    Type: Application
    Filed: December 20, 2018
    Publication date: June 27, 2019
    Inventor: Durai Vishak Nirmal Ramaswamy
  • Publication number: 20190189357
    Abstract: Some embodiments include an apparatus having horizontally-spaced bottom electrodes supported by a supporting structure. Leaker device material is directly against the bottom electrodes. Insulative material is over the bottom electrodes, and upper electrodes are over the insulative material. Plate material extends across the upper electrodes and couples the upper electrodes to one another. The plate material is directly against the leaker device material. The leaker device material electrically couples the bottom electrodes to the plate material, and may be configured to discharge at least a portion of excess charge from the bottom electrodes to the plate material. Some embodiments include methods of forming apparatuses which include capacitors having bottom electrodes and top electrodes, with the top electrodes being electrically coupled to one another through a conductive plate. Leaker devices are formed to electrically couple the bottom electrodes to the conductive plate.
    Type: Application
    Filed: December 15, 2017
    Publication date: June 20, 2019
    Inventors: Ashonita A. Chavan, Beth R. Cook, Manuj Nahar, Durai Vishak Nirmal Ramaswamy
  • Publication number: 20190189626
    Abstract: A memory cell includes a select device and a capacitor electrically coupled in series with the select device. The capacitor includes two conductive capacitor electrodes having ferroelectric material there-between. The capacitor has an intrinsic current leakage path from one of the capacitor electrodes to the other through the ferroelectric material. There is a parallel current leakage path from the one capacitor electrode to the other. The parallel current leakage path is circuit-parallel the intrinsic path and of lower total resistance than the intrinsic path. Other aspects are disclosed.
    Type: Application
    Filed: February 25, 2019
    Publication date: June 20, 2019
    Applicant: Micron Technology, Inc.
    Inventors: Kamal M. Karda, Qian Tao, Durai Vishak Nirmal Ramaswamy, Haitao Liu, Kirk D. Prall, Ashonita Chavan
  • Publication number: 20190189807
    Abstract: A transistor comprises a pair of source/drain regions having a channel region there-between. A transistor gate construction is operatively proximate the channel region. The channel region comprises a direction of current flow there-through between the pair of source/drain regions. The channel region comprises at least one of GaP, GaN, and GaAs extending all along the current-flow direction. Each of the source/drain regions comprises at least one of GaP, GaN, and GaAs extending completely through the respective source/drain region orthogonal to the current-flow direction. The at least one of the GaP, the GaN, and the GaAs of the respective source/drain region is directly against the at least one of the GaP, the GaN, and the GaAs of the channel region. Each of the source/drain regions comprises at least one of elemental silicon and metal material extending completely through the respective source/drain region orthogonal to the current-flow direction. Other embodiments are disclosed.
    Type: Application
    Filed: December 20, 2017
    Publication date: June 20, 2019
    Inventor: Durai Vishak Nirmal Ramaswamy
  • Patent number: 10304531
    Abstract: Memory programming methods and memory systems are described. One example memory programming method includes first applying a first signal to a memory cell to attempt to program the memory cell to a desired state, wherein the first signal corresponds to the desired state, after the first applying, determining that the memory cell failed to place in the desired state, after the determining, second applying a second signal to the memory cell, wherein the second signal corresponds to another state which is different than the desired state, and after the second applying, third applying a third signal to the memory cell to program the memory cell to the desired state, wherein the third signal corresponds to the desired state. Additional method and apparatus are described.
    Type: Grant
    Filed: August 30, 2017
    Date of Patent: May 28, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Jonathan Strand, Adam Johnson, Xiaonan Chen, Durai Vishak Nirmal Ramaswamy
  • Publication number: 20190139960
    Abstract: A method of forming an array of capacitors and access transistors there-above comprises forming access transistor trenches partially into insulative material. The trenches individually comprise longitudinally-spaced masked portions and longitudinally-spaced openings in the trenches longitudinally between the masked portions. The trench openings have walls therein extending longitudinally in and along the individual trench openings against laterally-opposing sides of the trenches. At least some of the insulative material that is under the trench openings is removed through bases of the trench openings between the walls and the masked portions to form individual capacitor openings in the insulative material that is lower than the walls. Individual capacitors are formed in the individual capacitor openings. A line of access transistors is formed in the individual trenches. The line of access transistors electrically couples to the individual capacitors that are along that line.
    Type: Application
    Filed: January 3, 2019
    Publication date: May 9, 2019
    Applicant: Micron Technology, Inc.
    Inventors: Scott E. Sills, Durai Vishak Nirmal Ramaswamy
  • Publication number: 20190139591
    Abstract: Methods, systems, and devices for preventing disturb of untargeted memory cells during repeated access operations of target memory cells are described for a non-volatile memory array. Multiple memory cells may be in electronic communication with a common conductive line, and each memory cell may have an electrically non-linear selection component. Following an access operation (e.g., a read or write operation) of a target memory cell, untargeted memory cells may be discharged by applying a discharge voltage to the common conductive line. The discharge voltage may, for example, have a polarity opposite to the access voltage. In other examples, a delay may be instituted between access attempts in order to discharge the untargeted memory cells.
    Type: Application
    Filed: November 8, 2018
    Publication date: May 9, 2019
    Inventors: Bei Wang, Alessandro Calderoni, Wayne Kinney, Adam Johnson, Durai Vishak Nirmal Ramaswamy
  • Publication number: 20190136207
    Abstract: A method of forming a tier of an array of memory cells within an array area, the memory cells individually comprising a capacitor and an elevationally-extending transistor, the method comprising using two, and only two, sacrificial masking steps within the array area of the tier in forming the memory cells. Other methods are disclosed, as are structures independent of method of fabrication.
    Type: Application
    Filed: January 3, 2019
    Publication date: May 9, 2019
    Applicant: Micron Technology, Inc.
    Inventor: Durai Vishak Nirmal Ramaswamy
  • Patent number: 10282108
    Abstract: The hybrid memory device may include volatile and non-volatile memory cells on a single substrate, or die. The non-volatile memory cells may have ferroelectric capacitors and the volatile memory cells may have paraelectric or linear dielectric capacitors for their respective logic storage components. In some examples, the volatile memory cells may be used as a cache for the non-volatile memory cells. Or the non-volatile memory cells may be used as a back-up for the volatile memory cells. By placing both types of cells on a single die, rather than separate dies, various performance metrics may be improved, including those related to power consumption and operation speed.
    Type: Grant
    Filed: August 31, 2016
    Date of Patent: May 7, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Kevin J. Ryan, Kirk D. Prall, Durai Vishak Nirmal Ramaswamy, Robert Quinn
  • Patent number: 10269804
    Abstract: A method of forming an array of cross point memory cells comprises using two, and only two, masking steps to collectively pattern within the array spaced lower first lines, spaced upper second lines which cross the first lines, and individual programmable devices between the first lines and the second lines where such cross that have an upwardly open generally U-shape vertical cross-section of programmable material laterally between immediately adjacent of the first lines beneath individual of the upper second lines. Arrays of cross point memory cells independent of method of manufacture are disclosed.
    Type: Grant
    Filed: May 11, 2016
    Date of Patent: April 23, 2019
    Assignee: Micron Technology, Inc.
    Inventor: Durai Vishak Nirmal Ramaswamy
  • Patent number: 10263183
    Abstract: A method of forming an array of cross point memory cells comprises forming spaced conductive lower electrode pillars for individual of the memory cells being formed along and elevationally over spaced lower first lines. Walls cross elevationally over the first lines and between the electrode pillars that are along the first lines. The electrode pillars and walls form spaced openings between the first lines. The openings are lined with programmable material of the memory cells being formed to less-than-fill the openings with the programmable material. Conductive upper electrode material is formed over the programmable material within remaining volume of the openings and spaced upper second lines are formed which cross the first lines elevationally over the conductive upper electrode material that is within the openings.
    Type: Grant
    Filed: November 30, 2017
    Date of Patent: April 16, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Scott E. Sills, Durai Vishak Nirmal Ramaswamy
  • Patent number: 10229874
    Abstract: An array of memory cells individually comprising a capacitor and a transistor comprises, in a first level, alternating columns of digitlines and conductive shield lines. In a second level above the first level there are rows of transistor wordlines. In a third level above the second level there are rows and columns of capacitors. In a fourth level above the third level there are rows of transistor wordlines. In a fifth level above the fourth level there are alternating columns of digitlines and conductive shield lines. Other embodiments and aspects are disclosed, including method.
    Type: Grant
    Filed: March 22, 2018
    Date of Patent: March 12, 2019
    Assignee: Micron Technology, Inc.
    Inventor: Durai Vishak Nirmal Ramaswamy
  • Publication number: 20190074277
    Abstract: A memory array comprises vertically-alternating tiers of insulative material and memory cells. The memory cells individually comprise a transistor and a capacitor. The capacitor comprises a first electrode electrically coupled to a source/drain region of the transistor. The first electrode comprises an annulus in a straight-line horizontal cross-section and a capacitor insulator radially inward of the first electrode annulus. A second electrode is radially inward of the capacitor insulator. A capacitor-electrode structure extends elevationally through the vertically-alternating tiers. Individual of the second electrodes of individual of the capacitors are electrically coupled to the elevationally-extending capacitor-electrode structure. A sense line is electrically coupled to another source/drain region of multiple of the transistors that are in different memory-cell tiers. Additional embodiments and aspects are disclosed, including methods.
    Type: Application
    Filed: August 31, 2018
    Publication date: March 7, 2019
    Applicant: Micron Technology, Inc.
    Inventor: Durai Vishak Nirmal Ramaswamy