Abstract: The present invention includes apparatus and methods for measuring impedance of a layer of deposited metal on a substrate and controlling deposition uniformity during electroplating. A first circuit delivers plating current to a metal layer on the substrate, and a second circuit, electrically isolated from the first, measures the impedance. Methods of the invention provide multi-point sheet resistance measurements before and during an electroplating process on a substrate. In a specific example, resistance is measured via a copper seed layer during electroplating.

Abstract: A plating cell has an inner plating bath container for performing electroplating on a work piece (e.g., a wafer) submerged in a solution contained by the inner plating bath container. A reclaim inlet funnels any solution overflowing the inner plating bath container back into a reservoir container to be circulated back into the inner plating bath container. A waste channel is also provided having an inlet at a different height than the inlet of the reclaim channel. After electroplating, the wafer is lifted to a position and spun. While spinning, the wafer is thoroughly rinse with, for example, ultra pure water. The spin rate and height of the wafer determine whether the water and solution are reclaimed through the reclaim channel or disposed through the waste channel.

Abstract: A blade-type chain tensioner (10, 110) is provided including a shoe (30, 130) adapted to impart tension to a chain (16), a blade spring (28, 128) engaging the shoe (30, 130), a piezoelectric strain element (35, 135) coupled to the blade spring (28, 128) or the shoe (30, 130), and a circuit (34, 137) adapted to receive a voltage or voltage data signal generated by a sensor (33, 133) coupled to the blade spring and shoe assembly (28/30, 128/130) in response to a vibration having a predetermined frequency or frequency band occurring in the blade spring and shoe assembly (28/30, 128/130), wherein the circuit (34, 137) is adapted to operably interact with the piezoelectric strain actuator element (35, 135) to induce a vibratory moment therein effective to reduce the vibration of the chain tensioner (10, 110).

Abstract: An apparatus for electroplating a wafer surface includes a cup having a central aperture defined by an inner perimeter, a compliant seal adjacent the inner perimeter, contacts adjacent the compliant seal and a cone attached to a rotatable spindle. The compliant seal forms a seal with the perimeter region of the wafer surface preventing plating solution from contaminating the wafer edge, wafer backside and the contacts. As a further measure to prevent contamination, the region behind the compliant seal is pressurized. By rotating the wafer during electroplating, bubble entrapment on the wafer surface is prevented. Further, the contacts can be arranged into banks of contacts and the resistivity between banks can be tested to detect poor electrical connections between the contacts and the wafer surface.

Abstract: A blade-type chain tensioner (10, 110) is provided including a shoe (30, 130) adapted to impart tension to a chain (16), a blade spring (28, 128) engaging the shoe (30, 130), a piezoelectric strain element (35, 135) coupled to the blade spring (28, 128) or the shoe (30, 130), and a circuit (34, 137) adapted to receive a voltage or voltage data signal generated by a sensor (33, 133) coupled to the blade spring and shoe assembly (28/30, 128/130) in response to a vibration having a predetermined frequency or frequency band occurring in the blade spring and shoe assembly (28/30, 128/130), wherein the circuit (34, 137) is adapted to operably interact with the piezoelectric strain actuator element (35, 135) to induce a vibratory moment therein effective to reduce the vibration of the chain tensioner (10, 110). The piezoelectric strain element (35, 135) and the circuit (34, 137) can be configured as a passive damping system (10) or an active damping system (110), according to different aspects of the invention.

Abstract: The orientation of a wafer with respect to the surface of an electrolyte is controlled during an electroplating process. The wafer is delivered to an electrolyte bath along a trajectory normal to the surface of the electrolyte. Along this trajectory, the wafer is angled before entry into the electrolyte for angled immersion. A wafer can be plated in an angled orientation or not, depending on what is optimal for a given situation. Also, in some designs, the wafer's orientation can be adjusted actively during immersion or during electroplating, providing flexibility in various electroplating scenarios.

Abstract: A method for detecting a phase difference between first and second input signals is provided. The method includes modulating a duty cycle of first and second intermediate signals from a first duty cycle based on the phase difference between the first and second input signals. The method further includes creating a differential output signal based on the modulated duty cycles of the first and second intermediate signals that is related to the phase difference between the first and second input signals.

Abstract: A vibration control system for an engine or transmission cover on a motor vehicle to absorb and dissipate gear or chain-induced vibration uses a piezoelectric strain actuator with a passive resonant control system to absorb and dissipate vibration at a fixed resonance frequency of transmission and engine timing covers. Another embodiment uses an open-loop active control system, based on signals already existing on-board in the engine controller and a control map of phase, amplitude and frequency. Still another embodiment employs a hybrid system, combining open- and closed-loop control.

Abstract: An electroplating apparatus prevents anode-mediated degradation of electrolyte additives by creating a mechanism for maintaining separate anolyte and catholyte and preventing mixing thereof within a plating chamber. The separation is accomplished by interposing a porous chemical transport barrier between the anode and cathode. The transport barrier limits the chemical transport (via diffusion and/or convection) of all species but allows migration of ionic species (and hence passage of current) during application of sufficiently large electric fields within electrolyte.

Abstract: A bar code reader missing link detection system for detection of missing, defective or misaligned chain links in assembled or in-process chains includes a light source for illuminating one or more chain links of a chain, a light sensitive diode array for detecting an image of a fixed scan line, produced by the light source, and a lens system for focusing incoming light produced by the light source onto the diode array, wherein the system is arranged such that the bar code reader reflects light from one or more of the chain links onto the diode array, and the diode array is continuously scanned, digitized, and the data obtained thereby interpreted to detect missing chain links.

Abstract: An apparatus for electroplating a wafer surface includes a cup having a central aperture defined by an inner perimeter, a compliant seal adjacent the inner perimeter, contacts adjacent the compliant seal and a cone attached to a rotatable spindle. The compliant seal forms a seal with the perimeter region of the wafer surface preventing plating solution from contaminating the wafer edge, wafer backside and the contacts. As a further measure to prevent contamination, the region behind the compliant seal is pressurized. By rotating the wafer during electroplating, bubble entrapment on the wafer surface is prevented. Further, the contacts can be arranged into banks of contacts and the resistivity between banks can be tested to detect poor electrical connections between the contacts and the wafer surface.

Abstract: A rotary union for use with an electroplating apparatus includes a shaft having a first surface area and an extended surface area, the first surface area having a first aperture therein, the extended surface area having a second aperture therein. The rotary union further includes an outer face seal and an inner face seal. The outer face seal is pressed against, and forms a seal with, the first surface area. The inner face seal is pressed against, and forms a seal with, the extended surface area. A pressure passage coupled to the first aperture passes through the outer face seal and around the outside of the inner face seal. A pressure/vacuum passage coupled to the second aperture passes through the inner face seal.

Abstract: A method of determining the extent of the emotional response of a test subject to stimului having a time-varying visual content, for example, an advertising presentation. The test subject is positioned to observe the presentation for a given duration, and a path of communication is established between the subject and a brain wave detector/analyzer. The intensity component of each of at least two different brain wave frequencies is measured during the exposure, and each frequency is associated with a particular emotion. While the subject views the presentation, periodic variations in the intensity component of the brain waves of each of the particular frequencies selected is measured. The change rates in the intensity at regular periods during the duration are also measured. The intensity change rates are then used to construct a graph of plural coordinate points, and these coordinate points graphically establish the composite emotional reaction of the subject as the presentation continues.

Abstract: A plating cell has an inner plating bath container for performing electroplating on a work piece (e.g., a wafer) submerged in a solution contained by the inner plating bath container. A reclaim inlet funnels any solution overflowing the inner plating bath container back into a reservoir container to be circulated back into the inner plating bath container. A waste channel is also provided having an inlet at a different height than the inlet of the reclaim channel. After electroplating, the wafer is lifted to a position and spun. While spinning, the wafer is thoroughly rinse with, for example, ultra pure water. The spin rate and height of the wafer determine whether the water and solution are reclaimed through the reclaim channel or disposed through the waste channel.

Abstract: In electroplating a metal layer on a semiconductor wafer, the resistive voltage drop between the edge of the wafer, where the electrical terminal is located, and center of the wafer causes the plating rate to be greater at the edge than at the center. As a result of this so-called "terminal effect", the plated layer tends to be concave. This problem is overcome by first setting the current at a relatively low level until the plated layer is sufficiently thick that the resistive drop is negligible, and then increasing the current to improve the plating rate. Alternatively, the portion of the layer produced at the higher current can be made slightly convex to compensate for the concave shape of the portion of the layer produced at the lower current. This is done by reducing the mass transfer of the electroplating solution near the edge of the wafer to the point that the electroplating process is mass transfer limited in that region.

Abstract: An apparatus for electroplating a wafer surface includes a cup having a central aperture defined by an inner perimeter, a compliant seal adjacent the inner perimeter, contacts adjacent the compliant seal and a cone attached to a rotatable spindle. The compliant seal forms a seal with the perimeter region of the wafer surface preventing plating solution from contaminating the wafer edge, wafer backside and the contacts. As a further measure to prevent contamination, the region behind the compliant seal is pressurized. By rotating the wafer during electroplating, bubble entrapment on the wafer surface is prevented. Further, the contacts can be arranged into banks of contacts and the resistivity between banks can be tested to detect poor electrical connections between the contacts and the wafer surface.

Abstract: An apparatus for electroplating a wafer surface includes a cup having a central aperture defined by an inner perimeter, a compliant seal adjacent the inner perimeter, contacts adjacent the compliant seal and a cone attached to a rotatable spindle. The compliant seal forms a seal with the perimeter region of the wafer surface preventing plating solution from contaminating the wafer edge, wafer backside and the contacts. As a further measure to prevent contamination, the region behind the compliant seal is pressurized. By rotating the wafer during electroplating, bubble entrapment on the wafer surface is prevented. Further, the contacts can be arranged into banks of contacts and the resistivity between banks can be tested to detect poor electrical connections between the contacts and the wafer surface.

Abstract: In electroplating a metal layer on a semiconductor wafer, the resistive voltage drop between the edge of the wafer, where the electrical terminal is located, and center of the wafer causes the plating rate to be greater at the edge than at the center. As a result of this so-called "terminal effect", the plated layer tends to be concave. This problem is overcome by first setting the current at a relatively low level until the plated layer is sufficiently thick that the resistive drop is negligible, and then increasing the current to improve the plating rate. Alternatively, the portion of the layer produced at the higher current can be made slightly convex to compensate for the concave shape of the portion of the layer produced at the lower current. This is done by reducing the mass transfer of the electroplating solution near the edge of the wafer to the point that the electroplating process is mass transfer limited in that region.

Abstract: A plating cell has an inner plating bath container for performing electroplating on a work piece (e.g., a wafer) submerged in a solution contained by the inner plating bath container. A reclaim inlet funnels any solution overflowing the inner plating bath container back into a reservoir container to be circulated back into the inner plating bath container. A waste channel is also provided having an inlet at a different height than the inlet of the reclaim channel. After electroplating, the wafer is lifted to a position and spun. While spinning, the wafer is thoroughly rinse with, for example, ultra pure water. The spin rate and height of the wafer determine whether the water and solution are reclaimed through the reclaim channel or disposed through the waste channel.

Abstract: In electroplating a metal layer on a semiconductor wafer, the resistive voltage drop between the edge of the wafer, where the electrical terminal is located, and center of the wafer causes the plating rate to be greater at the edge than at the center. As a result of this so-called "terminal effect", the plated layer tends to be concave. This problem is overcome by first setting the current at a relatively low level until the plated layer is sufficiently thick that the resistive drop is negligible, and then increasing the current to improve the plating rate. Alternatively, the portion of the layer produced at the higher current can be made slightly convex to compensate for the concave shape of the portion of the layer produced at the lower current. This is done by reducing the mass transfer of the electroplating solution near the edge of the wafer to the point that the electroplating process is mass transfer limited in that region.