Abstract: Error correction systems and methods for improving sense matching conditions between hard-bit read (HBR) information and soft-bit read (SBR) information. For HBRs, a given set of sense conditions can include a discharged bit line of one or more cells that discharged during a previous HBR. For SBRs, a given set of sense conditions can include loading latches of the sense amplifiers for corresponding cells are with sense results of the previous SBR strobe when the corresponding cells discharged during a previous SBR strobe or loading the latches of the sense amplifiers with sense results of a previous HBR when the corresponding cells discharged during the previous HBR.

Abstract: Apparatus and methods to vary, in response to temperature, a precharge voltage level of a sense node during a sense operation, a sense node develop time during the sense operation, and/or a ratio of a deboost voltage level capacitively decoupled from the sense node to a boost voltage level capacitively coupled to the sense node during the sense operation.

Abstract: The invention provides a circuit structure sharing the same memory, where the circuit structure includes a first volatile memory, a system chip and a signal processing chip. The system chip is connected to the first volatile memory via a first connection interface. The signal processing chip is connected to the system chip via a second connection interface. A memory controller is disposed in the system chip and connected to the first connection interface and the second connection interface. The signal processing chip transmits a first access command to the memory controller via the second connection interface, and the memory controller accesses the first volatile memory via the first connection interface according to the first access command and transmits the access result of the first access command to the signal processing chip via the second connection interface.

Abstract: Sense circuits and methods to vary, in response to temperature, a precharge voltage level of a sense node during a sense operation, a sense node develop time during the sense operation, and/or a ratio of a deboost voltage level capacitively decoupled from the sense node to a boost voltage level capacitively coupled to the sense node during the sense operation.

Abstract: Sense circuits and methods to vary, in response to temperature, a precharge voltage level of a sense node during a sense operation, a sense node develop time during the sense operation, and/or a ratio of a deboost voltage level capacitively decoupled from the sense node to a boost voltage level capacitively coupled to the sense node during the sense operation.

Abstract: Systems, apparatuses and methods may provide for determining a magnitude of a bounce voltage on a source line associated with one or more memory cells and conducting, if the magnitude of the bounce voltage exceeds a threshold, a coarse-level program verification and a fine-level program verification of the one or more memory cells. Additionally, if the magnitude of the bounce voltage does not exceed the threshold, only the fine-level program verification of the one or more memory cells may be conducted. In one example, the coarse-level program verification is bypassed if the magnitude of the bounce voltage does not exceed the threshold.

Abstract: Systems, apparatuses and methods may provide for determining a magnitude of a bounce voltage on a source line associated with one or more memory cells and conducting, if the magnitude of the bounce voltage exceeds a threshold, a coarse-level program verification and a fine-level program verification of the one or more memory cells. Additionally, if the magnitude of the bounce voltage does not exceed the threshold, only the fine-level program verification of the one or more memory cells may be conducted. In one example, the coarse-level program verification is bypassed if the magnitude of the bounce voltage does not exceed the threshold.

Abstract: A method and apparatus that provides the ability to control programming pulses having different widths and/or voltages in a flash memory device. The widths and/or voltage levels of programming pulses are set to achieve programming of all memory cells of an array using a minimum number of programming pulses.

Abstract: A socket wrench assembly includes three drive shanks each having a bore and each having a socket member attached to the outer end, and each having a smaller compartment and a greater non-circular chamber formed in the socket member, and the inner end portions of the drive shanks are secured together to form a Y-shaped or T-shaped structure for allowing either of the drive shanks to be driven or rotated by the other drive shanks with a greater driving torque, and the chambers of the socket members include inner diameters different from each other for receiving or engaging with or for driving tool members of different dimensions or sizes.

Abstract: A method and apparatus that provides the ability to control programming pulses having different widths and/or voltages in a flash memory device. The widths and/or voltage levels of programming pulses are set to achieve programming of all memory cells of an array using a minimum number of programming pulses.

Abstract: A method and apparatus that provides the ability to control programming pulses having different widths and/or voltages in a flash memory device. The widths and/or voltage levels of programming pulses are set to achieve programming of all memory cells of an array using a minimum number of programming pulses.

Abstract: Methods of enhancing antitumor activity of an immune cell comprising contacting the immune cell with a Stat3 inhibitor are described. Also described are methods of killing a tumor cell or inhibiting tumor growth in a subject comprising contacting an immune cell of the subject with a Stat3 inhibitor.

Abstract: Provided herein are methods of enhancing the radiation response of a cell expressing activated Stat1, Stat3, or Stat5. Methods for synergistically affecting a cell expressing activated Stat1, Stat3, or Stat5 are also described. The described methods may also be used to synergistically affect or enhance the radiation response of a cell in a subject.

Abstract: A method and apparatus that provides the ability to control programming pulses having different widths and/or voltages in a flash memory device. The widths and/or voltage levels of programming pulses are set to achieve programming of all memory cells of an array using a minimum number of programming pulses.

Abstract: A method and apparatus that provides the ability to control programming pulses having different widths and/or voltages in a flash memory device. The widths and/or voltage levels of programming pulses are set to achieve programming of all memory cells of an array using a minimum number of programming pulses.

Abstract: A composition for a damp hand donnable glove using a novel coating. The novel coating results in the formulation of domains of variable size and height. The coating has a polyurethane polymer, and aqueous dispersion and a surfactant.

Abstract: A finger puppet toy sits comfortably on a finger of a child, and generates a sound when the finger is tapped against a hard object, such as a desk or a table-top. The sound may be a voice, an animal sound, an animal voice sound, a musical note, or any of the above sounds in the key of a musical note. The head of the puppet toy articulates about a shaft when the child articulates the finger, and the head may thus appear to move while the sound is generated. Multiple toys worn on one or more hands and having different musical notes may be tapped in sequence to play a melody.