Patents by Inventor Edmund Riedl

Edmund Riedl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230274996
    Abstract: A chip arrangement is provided. The chip arrangement may include a chip including a first main surface, wherein the first main surface includes an active area, a chip termination portion, and at least one contact pad. A first dielectric layer at least partially covers the chip termination portion and the active area, and at least partially exposes the at least one contact pad, and a second dielectric layer formed by atomic layer deposition over the first dielectric layer and over the at least one contact pad.
    Type: Application
    Filed: February 3, 2023
    Publication date: August 31, 2023
    Applicant: Infineon Technologies AG
    Inventors: Stefan SCHWAB, Edward F√úRGUT, Edmund RIEDL, Harry SAX, Stefan KRIVEC, Manfred PFAFFENLEHNER, Carsten SCHAEFFER
  • Publication number: 20230260860
    Abstract: A method of manufacturing a package includes forming an adhesion promoter on at least part of an electronic component. The adhesion promoter is a morphological adhesion promoter including a morphological structure having a plurality of openings. The method further includes at least partially encapsulating the electronic component with an inorganic encapsulant with the adhesion promoter in between. The adhesion promoter enhances adhesion between at least part of the electronic component and the encapsulant.
    Type: Application
    Filed: April 4, 2023
    Publication date: August 17, 2023
    Inventors: Edmund Riedl, Steffen Jordan, Stefan Miethaner, Stefan Schwab
  • Patent number: 11652012
    Abstract: A package includes an electronic component, an inorganic encapsulant encapsulating at least part of the electronic component, and an adhesion promoter between at least part of the electronic component and the encapsulant.
    Type: Grant
    Filed: June 26, 2020
    Date of Patent: May 16, 2023
    Assignee: Infineon Technologies AG
    Inventors: Edmund Riedl, Steffen Jordan, Stefan Miethaner, Stefan Schwab
  • Publication number: 20230064442
    Abstract: A chip package structure is disclosed. In one example, the chip package may include a chip, an encapsulation material, and an exposed pad that is electrically conductively connected to the chip. A layer of a porous or dendrite-comprising adhesion promoter is on a surface of the exposed pad. A thermal interface material that is attached to the exposed pad by the layer.
    Type: Application
    Filed: August 3, 2022
    Publication date: March 2, 2023
    Applicant: Infineon Technologies AG
    Inventors: Chan Whai Augustine KAN, Martin MAYER, Edmund RIEDL, Edward FUERGUT, Harry Walter SAX
  • Publication number: 20230027669
    Abstract: An electronic system is disclosed. In one example, the electronic system comprises an at least partially electrically conductive carrier, an electronic component, and an intermetallic connection structure connecting the carrier and the component. The intermetallic connection structure comprising an intermetallic mesh structure in a central portion of the intermetallic connection structure, and opposing exterior structures without intermetallic mesh and each arranged between the intermetallic mesh structure and the carrier or the component.
    Type: Application
    Filed: July 25, 2022
    Publication date: January 26, 2023
    Applicant: Infineon Technologies AG
    Inventors: Chee Yang NG, Edmund RIEDL, Joseph Victor SOOSAI PRAKASAM
  • Patent number: 11450642
    Abstract: A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.
    Type: Grant
    Filed: December 23, 2020
    Date of Patent: September 20, 2022
    Assignee: Infineon Technologies AG
    Inventors: Edmund Riedl, Wu Hu Li, Alexander Heinrich, Ralf Otremba, Werner Reiss
  • Publication number: 20220275217
    Abstract: Filler particle for a composite is disclosed. In one example, the filler particle comprises a core, and a shell which at least partially covers the core and has a morphological adhesion promoter.
    Type: Application
    Filed: January 27, 2022
    Publication date: September 1, 2022
    Applicant: Infineon Technologies AG
    Inventors: Stefan SCHWAB, Edmund RIEDL
  • Patent number: 11328935
    Abstract: A method of forming a layer structure is provided. The method may include plasma-treating a metal surface with a hydrogen-containing plasma, thereby forming nucleophilic groups over the metal surface, and forming an organic layer over the metal surface, wherein the organic layer comprises silane and is covalently bonded to the nucleophilic groups.
    Type: Grant
    Filed: January 15, 2020
    Date of Patent: May 10, 2022
    Assignee: Infineon Technologies AG
    Inventors: Johann Gatterbauer, Wolfgang Lehnert, Norbert Mais, Verena Muhr, Edmund Riedl, Harry Sax
  • Publication number: 20210335686
    Abstract: A structure includes a first sub-structure and a second sub-structure coupled with the first sub-structure and being a composite including filler particles in a matrix. A surface of the first sub-structure has a surface profile with first elevations and first recesses configured to enable at least part of the filler particles to at least partially enter the first recesses to thereby form an interlayer including the first elevations of the first sub-structure and filler particles in the matrix of the second sub-structure.
    Type: Application
    Filed: April 23, 2021
    Publication date: October 28, 2021
    Inventors: Stefan Schwab, Edmund Riedl
  • Publication number: 20210167034
    Abstract: A chip arrangement including: a chip including a chip back side; a substrate including a surface with a plating; and a zinc-based solder alloy which attaches the chip back side to the plating on the surface of the substrate, the zinc-based solder alloy including, by weight, 1% to 30% aluminum, 0.5% to 20% germanium, and 0.5% to 20% gallium, wherein a balance of the zinc-based solder alloy is zinc.
    Type: Application
    Filed: January 15, 2021
    Publication date: June 3, 2021
    Inventors: Manfred MENGEL, Alexander HEINRICH, Steffen ORSO, Thomas BEHRENS, Oliver EICHINGER, Lim FONG, Evelyn NAPETSCHNIG, Edmund RIEDL
  • Publication number: 20210118843
    Abstract: A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.
    Type: Application
    Filed: December 23, 2020
    Publication date: April 22, 2021
    Applicant: Infineon Technologies AG
    Inventors: Edmund Riedl, Wu Hu Li, Alexander Heinrich, Ralf Otremba, Werner Reiss
  • Patent number: 10930614
    Abstract: A chip arrangement including a chip comprising a chip back side; a back side metallization on the chip back side, the back side metallization including a plurality of layers; a substrate comprising a surface with a metal layer; a zinc-based solder alloy configured to attach the back side metallization to the metal layer, the zinc-based solder alloy having by weight 8% to 20% aluminum, 0.5% to 20% magnesium, 0.5% to 20% gallium, and the balance zinc; wherein the metal layer is configured to provide a good wettability of the zinc-based solder alloy on the surface of the substrate. The plurality of layers may include one or more of a contact layer configured to contact a semiconductor material of the chip back side; a barrier layer; a solder reaction, and an oxidation protection layer configured to prevent oxidation of the solder reaction layer.
    Type: Grant
    Filed: July 26, 2017
    Date of Patent: February 23, 2021
    Assignee: Infineon Technologies AG
    Inventors: Manfred Mengel, Alexander Heinrich, Steffen Orso, Thomas Behrens, Oliver Eichinger, Lim Fong, Evelyn Napetschnig, Edmund Riedl
  • Patent number: 10896893
    Abstract: A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.
    Type: Grant
    Filed: March 16, 2020
    Date of Patent: January 19, 2021
    Assignee: Infineon Technologies AG
    Inventors: Edmund Riedl, Wu Hu Li, Alexander Heinrich, Ralf Otremba, Werner Reiss
  • Patent number: 10892247
    Abstract: A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.
    Type: Grant
    Filed: March 16, 2020
    Date of Patent: January 12, 2021
    Assignee: Infineon Technologies AG
    Inventors: Edmund Riedl, Wu Hu Li, Alexander Heinrich, Ralf Otremba, Werner Reiss
  • Publication number: 20200411400
    Abstract: A package includes an electronic component, an inorganic encapsulant encapsulating at least part of the electronic component, and an adhesion promoter between at least part of the electronic component and the encapsulant.
    Type: Application
    Filed: June 26, 2020
    Publication date: December 31, 2020
    Inventors: Edmund Riedl, Steffen Jordan, Stefan Miethaner, Stefan Schwab
  • Publication number: 20200381314
    Abstract: A method for providing coated leadframes in a process line includes: feeding a plurality of leadframes successively into a process line; depositing a layer onto a main face of the leadframes; measuring physical properties of the layer by one of ellipsometry or reflectometry; assigning measured physical data to any one of a plurality of categories; and depending on a resulting category of the measured physical data, altering process parameters of the depositing, not altering the process parameters of the depositing, or shutting down the process line.
    Type: Application
    Filed: May 27, 2020
    Publication date: December 3, 2020
    Inventors: Wu Hu Li, Stefan Schwab, Verena Muhr, Edmund Riedl, Alexander Roth, Harry Sax
  • Patent number: 10734352
    Abstract: A metallic interconnection and a semiconductor arrangement including the same are described, wherein a method of manufacturing the same may include: providing a first structure including a first metallic layer having protruding first microstructures; providing a second structure including a second metallic layer having protruding second microstructures; contacting the first and second microstructures to form a mechanical connection between the structures, the mechanical connection being configured to allow fluid penetration; removing one or more non-metallic compounds on the first metallic layer and the second metallic layer with a reducing agent that penetrates the mechanical connection and reacts with the one or more non-metallic compounds; and heating the first metallic layer and the second metallic layer at a temperature causing interdiffusion of the first metallic layer and the second metallic layer to form the metallic interconnection between the structures.
    Type: Grant
    Filed: October 1, 2018
    Date of Patent: August 4, 2020
    Assignee: Infineon Technologies AG
    Inventors: Irmgard Escher-Poeppel, Khalil Hosseini, Johannes Lodermeyer, Joachim Mahler, Thorsten Meyer, Georg Meyer-Berg, Ivan Nikitin, Reinhard Pufall, Edmund Riedl, Klaus Schmidt, Manfred Schneegans, Patrick Schwarz
  • Publication number: 20200243480
    Abstract: A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.
    Type: Application
    Filed: March 16, 2020
    Publication date: July 30, 2020
    Applicant: Infineon Technologies AG
    Inventors: Edmund Riedl, Wu Hu Li, Alexander Heinrich, Ralf Otremba, Werner Reiss
  • Publication number: 20200231800
    Abstract: A mold compound includes the following constituents: a matrix composed of a polymer resin, less than 0.1 weight percent of a free adhesion promoter, based on the total weight of the mold compound, for promoting adhesion of the mold compound, a curing agent for curing the polymer resin, and a catalyst for catalysing formation of the mold compound; and a filler.
    Type: Application
    Filed: January 22, 2020
    Publication date: July 23, 2020
    Inventors: Alexander Roth, Edmund Riedl, Stefan Schwab
  • Publication number: 20200227278
    Abstract: A method of forming a layer structure is provided. The method may include plasma-treating a metal surface with a hydrogen-containing plasma, thereby forming nucleophilic groups over the metal surface, and forming an organic layer over the metal surface, wherein the organic layer comprises silane and is covalently bonded to the nucleophilic groups.
    Type: Application
    Filed: January 15, 2020
    Publication date: July 16, 2020
    Inventors: Johann Gatterbauer, Wolfgang Lehnert, Norbert Mais, Verena Muhr, Edmund Riedl, Harry Sax