Abstract: A conductive metal pattern is formed in a polymeric layer that has a polymer that comprises (1) pendant groups that are capable of providing pendant sulfonic acid groups upon exposure of the reactive polymer to radiation, and (2) pendant groups that are capable of reacting in the presence of the sulfonic acid groups to provide crosslinking. The polymeric layer is patternwise exposed to form non-exposed regions and exposed regions, which are contacted with a reducing agent to incorporate reducing agent therein. These exposed regions are then contacted with electroless seed metal ions to oxidize the reducing agent to form corresponding electroless seed metal nuclei that can be then electrolessly plated with a conductive metal.

Abstract: A conductive pattern can be formed using a polymeric layer that contains a reactive composition that comprises a reactive polymer that is metal ion-complexing, water-soluble, and crosslinkable. This reactive polymer comprises photosensitive non-aromatic unsaturated carbocyclic groups as well as metal ion-complexing and water solubilizing groups. The reactive composition can be patternwise exposed to suitable radiation to induce crosslinking within the reactive polymer. The reactive composition and reactive polymer in the non-exposed regions can be removed due to their aqueous solubility, but the exposed regions of the polymeric layer are contacted with electroless seed metal ions, which are then reduced. The resulting electroless seed metal nuclei are electrolessly plated with a suitable metal to form the desired conductive pattern. Various articles can be prepared during this process, and the product article can be incorporated into various electronic devices.

Abstract: A conductive metal pattern can be formed in a polymeric layer that has a reactive polymer that comprises (1) pendant groups that are capable of providing pendant sulfonic acid groups upon exposure, and (2) pendant groups that are capable of reacting in the presence of the sulfonic acid groups to provide crosslinking. The polymeric layer is patternwise exposed to provide non-exposed regions and exposed regions comprising a polymer comprising pendant sulfonic acid groups. The exposed regions are contacted with electroless seed metal ions to form a pattern of electroless seed metal ions. This pattern can be contacted with a non-reducing reagent that reacts with the electroless seed metal ions to form an electroless seed metal compound that has a pKsp of less than 40, and which is electrolessly plated with a conductive metal.

Abstract: A conductive metal pattern is formed using a reactive polymer that can provide pendant sulfonic acid groups upon exposure to radiation, and (2) pendant groups that are capable of providing crosslinking. The polymeric layer is patternwise exposed to radiation to provide first exposed regions that are then contacted with electroless seed metal ions to form a pattern of electroless seed metal ions, followed by contact with a halide. At least some of the electroless seed metal halide can be exposed to form second exposed regions. The polymeric layer can be contacted with a reducing agent either: (i) to develop the electroless seed metal image in the second exposed regions, or (ii) to develop all of the electroless seed metal halide in the first exposed regions, and optionally contacted with a fixing agent. The electroless seed metal nuclei in the first exposed regions can be electrolessly plated with a conductive metal.

Abstract: A conductive metal pattern is formed using a reactive polymer that comprises (1) pendant groups that are capable of providing pendant sulfonic acid groups upon exposure of the reactive polymer to radiation, and (2) pendant groups that are capable of reacting in the presence of the sulfonic acid groups to provide de-blocking and crosslinking in the reactive polymer. The polymeric layer is patternwise exposed to provide non-exposed regions and exposed regions comprising a polymer comprising pendant sulfonic acid groups. The polymeric layer is contacted with a reducing agent, followed by bleaching to remove surface amounts of the reducing agent in both non-exposed regions and exposed regions. The exposed regions are then contacted with electroless seed metal ions to oxidize the reducing agent and to form a pattern of corresponding electroless seed metal nuclei in the exposed regions. The corresponding electroless seed metal nuclei are then electrolessly plated with a conductive metal.

Abstract: A conductive metal pattern is formed in a polymeric layer that has a polymer that comprises (1) pendant groups that are capable of providing pendant sulfonic acid groups upon exposure of the reactive polymer to radiation, and (2) pendant groups that are capable of reacting in the presence of the sulfonic acid groups to provide crosslinking. The polymeric layer is patternwise exposed to form non-exposed regions and exposed regions, which are contacted with a reducing agent to incorporate reducing agent therein. These exposed regions are then contacted with electroless seed metal ions to oxidize the reducing agent to form corresponding electroless seed metal nuclei that can be then electrolessly plated with a conductive metal.

Abstract: A conductive metal pattern is formed in a polymeric layer that has a reactive polymer that comprises (1) pendant groups that are capable of providing pendant sulfonic acid groups upon exposure to radiation, and (2) pendant groups that are capable of reacting in the presence of the sulfonic acid groups to provide crosslinking. The polymeric layer is patternwise exposed to provide a polymeric layer comprising non-exposed regions and exposed regions comprising a polymer comprising pendant sulfonic acid groups. The exposed regions are contacted with electroless seed metal ions to form a pattern of electroless seed metal ions. The electroless seed metal ions are reduced to provide a pattern of electroless seed metal nuclei that are then electrolessly plated with a conductive metal.

Abstract: A conductive pattern is prepared in a polymeric layer that has (a) a reactive polymer comprising pendant tertiary alkyl ester groups, (b) a compound that provides an acid upon exposure to radiation having a ?max of at least 150 nm and up to and including 450 nm, and (c) a crosslinking agent. The polymeric layer is patternwise exposed to provide a polymeric layer comprising non-exposed regions and exposed regions comprising a polymer comprising carboxylic acid groups. The exposed regions are contacted with electroless seed metal ions to form a pattern of electroless seed metal ions. The pattern of electroless seed metal ions is then reduced to provide a pattern of corresponding electroless seed metal nuclei. The corresponding electroless seed metal nuclei are then electrolessly plated with a conductive metal.

Abstract: A conductive pattern is formed in a polymeric layer that has (a) a reactive polymer comprising pendant tertiary alkyl ester groups, (b) a compound that provides an acid upon exposure to radiation, and (c) a crosslinking agent. The polymeric layer is patternwise exposed to radiation to provide a polymeric layer comprising non-exposed regions and exposed regions comprising a polymer comprising carboxylic acid groups. The exposed regions are contacted with electroless seed metal ions to form a pattern of electroless seed metal ions. This pattern of electroless seed metal ions can be contacted with a non-reducing reagent that reacts with the electroless seed metal ions to form an electroless seed metal compound that has a pKsp of less than 40. This bound electroless seed metal compound is then electrolessly plated with a suitable conductive metal.

Abstract: A conductive pattern can be formed a reactive polymer comprising pendant tertiary alkyl ester groups, (b) a compound that provides an acid upon exposure to radiation, (c) a crosslinking agent that is capable of reacting in the presence of the acid, and (d) optionally, a photosensitizer. The polymeric layer is patternwise exposed to provide non-exposed regions and exposed regions comprising a polymer comprising carboxylic acid groups. Both the non-exposed regions and the exposed regions of the polymeric layer are contacted with a reducing agent, bleached to remove surface amounts of the reducing agent in both non-exposed and exposed regions of the polymeric layer, and contacted with electroless seed metal ions to oxidize the reducing agent and to form corresponding electroless seed metal nuclei in the exposed regions. The corresponding electroless seed metal nuclei are then electrolessly plated with a conductive metal.

Abstract: A pattern is formed in a polymeric layer comprising a reactive composition that comprises: (a) a polymer comprising pendant—arylene-X—C(?O)—O— t-alkyl groups that comprise a blocking group that is cleavable to provide pendant—arylene-XH groups, (b) a compound that provides a cleaving acid upon exposure to radiation having a ?max of 150 nm and to 450 nm, which cleaving acid has a pKa of 2 or less as measured in water, and (c) optionally, a photosensitizer. The polymeric layer is imagewise exposed to suitable radiation to provide non-exposed regions and exposed regions comprising a de-blocked and crosslinked polymer with pendant—arylene-XH groups. The exposed regions are contacted with electroless seed metal ions in the de-blocked and crosslinked polymer. After reduction, the corresponding electroless seed metal nuclei are electrolessly plated using a suitable metal that is the same as or different from the corresponding electroless seed metal nuclei.

Abstract: A conductive pattern is formed using a reactive polymer comprising pendant tertiary alkyl ester groups, a compound that provides an acid upon exposure to radiation, and a crosslinking agent. A polymeric layer is patternwise exposed to form first exposed regions with a polymer comprising carboxylic acid groups that are contacted with electroless seed metal ions, and then contacted with a halide to form corresponding electroless seed metal halide. Another exposure converts electroless seed metal halide to electroless seed metal nuclei and forms second exposed regions. A reducing agent is used to develop the electroless seed metal nuclei in the second exposed regions, or to develop the electroless seed metal halide in the first exposed regions. Fixing is used to remove any remaining electroless seed metal halide. The electroless seed metal nuclei are then electrolessly plated in various exposed regions.

Abstract: A conductive pattern is formed in a polymeric layer that has (a) a reactive polymer comprising pendant tertiary alkyl ester groups, (b) a compound that provides an acid upon exposure to radiation, and (c) a crosslinking agent. The polymeric layer is patternwise exposed to radiation to provide a polymeric layer comprising non-exposed regions and exposed regions comprising a polymer comprising carboxylic acid groups. The exposed regions are contacted with electroless seed metal ions to form a pattern of electroless seed metal ions. This pattern of electroless seed metal ions can be contacted with a non-reducing reagent that reacts with the electroless seed metal ions to form an electroless seed metal compound that has a pKsp of less than 40. This bound electroless seed metal compound is then electrolessly plated with a suitable conductive metal.

Abstract: A conductive pattern is formed using a reactive polymer comprising pendant tertiary alkyl ester groups, a compound that provides an acid upon exposure to radiation, and a crosslinking agent. A polymeric layer is patternwise exposed to form first exposed regions with a polymer comprising carboxylic acid groups that are contacted with electroless seed metal ions, and then contacted with a halide to form corresponding electroless seed metal halide. Another exposure converts electroless seed metal halide to electroless seed metal nuclei and forms second exposed regions. A reducing agent is used to develop the electroless seed metal nuclei in the second exposed regions, or to develop the electroless seed metal halide in the first exposed regions. Fixing is used to remove any remaining electroless seed metal halide. The electroless seed metal nuclei are then electrolessly plated in various exposed regions.

Abstract: A pattern is formed in a polymeric layer comprising (a) a reactive polymer comprising -A- recurring units comprising pendant tertiary alkyl ester groups, (b) a compound that provides an acid upon exposure to radiation having a ?max of 150 nm to 450 nm, and (c) a crosslinking agent that is capable of reacting in the presence of the acid to provide crosslinking in the (a) reactive polymer. The polymeric layer is patternwise exposed to the radiation to provide a polymeric layer comprising exposed regions comprising a polymer comprising carboxylic acid groups. The exposed regions are contacted with a reducing agent to incorporate reducing agent, and then contacted with electroless seed metal ions to oxidize the reducing agent and to form corresponding electroless seed metal nuclei. The electroless seed metal nuclei are then electrolessly plated with a metal to form a conductive metal pattern.

Abstract: An inkjet printing system including an inkjet printer having a printhead and an inkjet ink in an ink tank supplying the inkjet ink to the printhead, wherein the ink tank includes a free ink compartment and a capillary media compartment vented to the atmosphere and in fluid communication with ink in the free ink compartment, and wherein the inkjet ink includes water, a self-dispersing carbon black pigment having greater than 11 weight % volatile surface functional groups, and a surfactant at a concentration of 0.10 weight percent or less, and having a static surface tension of 37.5 dynes/cm or less at 25° C. The system provides high print density and text sharpness when printed onto an ink receiving medium, and provides good performance in a bubbler-type ink tank which reduces the amount of ink trapped in the ink tank.

Abstract: An inkjet printing system including an inkjet printer having a printhead and an inkjet ink in an ink tank supplying the inkjet ink to the printhead, wherein the ink tank includes a free ink compartment and a capillary media compartment vented to the atmosphere and in fluid communication with ink in the free ink compartment, and wherein the inkjet ink includes water, a self-dispersing carbon black pigment having greater than 11 weight % volatile surface functional groups, and a surfactant at a concentration of 0.10 weight percent or less, and having a static surface tension of 37.5 dynes/cm or less at 25° C. The system provides high print density and text sharpness when printed onto an ink receiving medium, and provides good performance in a bubbler-type ink tank which reduces the amount of ink trapped in the ink tank.

Abstract: The present invention relates to a doped semiconductor nanocrystal layer comprising (a) a group IV oxide layer which is free of ion implantation damage, (b) from 30 to 50 atomic percent of a semiconductor nanocrystal distributed in the group IV oxide layer, and (c) from 0.5 to 15 atomic percent of one or more rare earth element, the one or more rare earth element being (i) dispersed on the surface of the semiconductor nanocrystal and (ii) distributed substantially equally through the thickness of the group IV oxide layer. The present invention also relates to a semiconductor structure comprising the above semiconductor nanocrystal layer and to processes for preparing the semiconductor nanocrystal layer.

Abstract: The present invention relates to compounds of general formula (13), and pharmaceutically acceptable salts thereof, in which: n=an integer of from 1 to 4; A represents a trioxane-containing residue; B represents a group having the general formula: -D-E-F-, in which D is linked to A and represents an atom or group selected from the following (a, b, c, d), E represents a bivalent, optionally substituted organic radical; and F is linked to C and represents a group selected from the following: (e, f, g, h) and C represents a group containing at least two nitrogen atoms, (13).

Abstract: This application relates to compounds of the general formula (11), and pharmaceutically acceptable salts thereof, in which R is selected from the group comprising optionally substituted alkyl, aryl, bisalkyl or bisaryl ester, bisalkyl or bisaryl ether, acetal, ketal, boronate, silyl ether, carbamate, carbonate, sulphate, sulphonate, phosphate and phosphonate, and to processes for their production. The compounds are useful as medicaments, in particular for the treatment of malaria and cancer.