Abstract: Systems and methods for application level authentication are provided for use with the low energy Bluetooth device and accessory. This includes receiving accessory credentials from a server, establishing a Bluetooth low energy connection with the accessory, authenticating with the accessory, and lastly transferring data to the accessory. The transferring of the data may be either a bulk transfer, or a data stream. The authenticating may be an application layer authentication between a device and the accessory using a shared secret key and using a hash function. Additional embodiments include methods for over-the-air firmware updates, and device control of a low energy Bluetooth accessory.

Abstract: A corrugated-typed fastener configured to couple a first substrate to a second substrate includes a bridge and a plurality of ribs, the ribs having a plurality of flutes. The flutes, and possibly the ribs, may be angled inwardly to form an apex disposed within the width of the fastener and pointing towards a center of the fastener. The ribs may extend outward from the bridge towards opposing ends of the fastener, and the ends may be at a different height than the bridge when viewing the fastener from the side. Alternatively, the ends may be at the same height as the bridge and also may be generally centered on the height of the fastener.

Abstract: An IGBT device includes an IGBT stack, a collector contact, a gate contact, and an emitter contact. The IGBT stack includes an injector region, a drift region over the injector region, a spreading region over the drift region, and a pair of junction implants in the spreading region. The spreading region provides a first surface of the IGBT stack, which is opposite the drift region. The pair of junction implants is separated by a channel, and extends from the first surface of the IGBT stack along a lateral edge of the IGBT stack towards the drift region to a first depth, such that the thickness of the spreading region is at least one and a half times greater than the first depth.

Abstract: A communication interface for providing an interface between a data link and a data processor, the data processor being capable of supporting an operating system and a user application, the communication interface being arranged to: support a first queue of data received over the link and addressed to a logical data port associated with a user application; support a second queue of data received over the link and identified as being directed to the operating system; and analyze data received over the link and identified as being directed to the operating system or the data port to determine whether that data meets one or more predefined criteria, and if it does meet the criteria transmit an interrupt to the operating system.

Abstract: The invention provides novel ligands of Kappa (?) opioid receptors, such as can be used to modulate a Kappa opioid receptor. Methods of synthesis and methods of use are also provided. Compounds of the invention can be used therapeutically in the treatment of dissociative disorders or pain, or to provide neuroprotection, or to induce diuresis, or to modulate the immune system, or for treatment of one or more of an affective disorders comprising depression or stress/anxiety; an addictive disorder; alcoholism, epilepsy; a cognition deficiency; schizophrenia; Alzheimer's disease; or pain.

Abstract: A data processing system arranged for receiving over a network, according to a data transfer protocol, data directed to any of a plurality of destination identities, the data processing system comprising: data storage for storing data received over the network; and a first processing arrangement for performing processing in accordance with the data transfer protocol on received data in the data storage, for making the received data available to respective destination identities; and a response former arranged for: receiving a message requesting a response indicating the availability of received data to each of a group of destination identities; and forming such a response; wherein the system is arranged to, in dependence on receiving the said message.

Abstract: The apparatus comprises a treatment reservoir defining first and second treatment zones separated by a porous membrane. Carbon-based adsorbent material capable of electrochemical regeneration is provided in said first and second treatment zones. An agitator is operable to distribute the adsorbent in aqueous organic waste liquid contained in the first and second treatment zones. First and second electric current feeders are operably connected to the adsorbent in the first and second treatment zones respectively. A controller operates the electric current feeders to pass an electric current through the adsorbent in the treatment zones in one direction to regenerate the adsorbent in one of the treatment zones and to then reverse the direction of the current applied to the adsorbent to regenerate the adsorbent in the other treatment zone. Further apparatus is described which facilitates aqueous waste water treatment in a continuous manner.

Abstract: Methods and processes are described that form ceramic wear surfaces on the outer surface of a cast part. A mold having a mold cavity is provided. The mold cavity may be washed using a refractory wash to provide for a smoother finish to the surface of the cast part and to maintain mold integrity. An adhesive is applied to predetermined locations in which increased wear during the use of the cast parts is anticipated to occur. Ceramic material may be applied to the predetermined locations by various means. A mask may be used to remove excess material from areas other than the predetermined locations. A molten metal is poured into the mold cavity and allowed to cool to form a cast part with a ceramic wear surface.

Abstract: Methods of forming a power semiconductor device having an edge termination are provided in which the power semiconductor device that has a drift region of a first conductivity type is formed on a substrate. A junction termination extension is formed on the substrate adjacent the power semiconductor device, the junction termination extension including a plurality of junction termination zones that are doped with dopants having a second conductivity type. The junction termination zones have different effective doping concentrations. A dopant activation process is performed to activate at least some of the dopants in the junction termination zones. An electrical characteristic of the power semiconductor device is measured. Then, the junction termination extension is etched in order to reduce the effective doping concentration within the junction termination extension.

Abstract: An apparatus and methods for controlling the location and distribution of loose ceramic particles in a ceramic metal composite component formed via casting. A retaining structure that may include loose ceramic particles is placed in a casting mold at a desired location for ceramic particles in the composite component prior to pouring molten metal into the casting mold. Alternatively, the loose ceramic particles may be introduced into the mold concurrently with the molten metal.

Abstract: Systems and methods allow a user to interact with an augmented reality device. In one implementation, a wearable device for providing task-based instructions to a user includes a display; a network interface; a data input device configured to capture information relating to progress of a task; and at least one processing device. The at least one processing device is configured to provide to a server system, via the network interface, the captured information relating to progress of the task; receive from the server system, via the network interface, information relating to a next step in the task; and cause the information relating to the next step in the task to be shown on the display.

Abstract: Systems and methods allow a user to interact with an augmented reality device. In one implementation, a wearable device establishes a communication path with a user of the wearable device and at least one individual. The wearable device includes a display; at least one sensor configured to provide an output indicative of a viewing direction of the user; and at least one processing device. The at least one processing device is configured to monitor the viewing direction of the user based on the output of the at least one sensor; determine, based on the monitored viewing direction, whether the user is looking in the direction of the at least one individual; and establish the communication path between the user and the at least one individual if the user is determined to be looking in the direction of the at least one individual.

Abstract: Systems and methods allow a user to interact with an augmented reality device. In one implementation, a wearable device for providing a virtual menu to a user includes a display; at least one sensor configured to provide an output indicative of an orientation of a head of the user; and at least one processing device. The at least one processing device is configured to monitor an orientation of the head of the user based on the output of the at least one sensor; determine based on the monitored orientation of the head whether the user is looking upward or downward with respect to a predetermined horizontal threshold; and cause the virtual menu to be shown on the display if the user is determined to be looking upward or downward with respect to the predetermined horizontal threshold.

Abstract: An apparatus and method for synchronising advertisements published on a group communications network with advertisements in a broadcast, the apparatus comprising: a receiver for receiving broadcast data; a communications interface in communication with a group communications network; a broadcast data content extractor adapted to derive search terms and advert data from the received broadcast data, the advert data relating to an advert received in the broadcast data, wherein on receipt of a query by a user of the group communications network, the query comprising one or more of the search terms, the communications interface publishes a group communication comprising at least a portion of the advert data on the group communications network.

Abstract: A data processing system arranged for receiving over a network, according to a data transfer protocol, data directed to any of a plurality of destination identities, the data processing system comprising: data storage for storing data received over the network; and a first processing arrangement for performing processing in accordance with the data transfer protocol on received data in the data storage, for making the received data available to respective destination identities; and a response former arranged for: receiving a message requesting a response indicating the availability of received data to each of a group of destination identities; and forming such a response; wherein the system is arranged to, in dependence on receiving the said message.

Abstract: A method for coating an extension spring. A helical extension spring is provided. The extension spring has a plurality of coils disposed along a longitudinal axis between a first end portion and a second end portion with the coils touching each other in absence of force acting on the spring that is sufficient for extending the same. The spring is then extended to an extended position. In the extended position the spring has a predetermined distance between successive coils. In the extended position a coating material is disposed onto the surface of the spring such that the coating material is disposed onto a surface portion of the spring where the coils touch each other in absence of extension.

Abstract: A Silicon Carbide (SiC) semiconductor device having back-side contacts to a P-type region and methods of fabrication thereof are disclosed. In one embodiment, an SiC semiconductor device includes an N-type substrate and an epitaxial structure on a front-side of the N-type substrate. The epitaxial substrate includes a P-type layer adjacent to the N-type substrate and one or more additional SiC layers on the P-type layer opposite the N-type substrate. The semiconductor device also includes one or more openings through the N-type substrate that extend from a back-side of the N-type substrate to the P-type layer and a back-side contact on the back-side of the N-type substrate and within the one or more openings such that the back-side contact is in physical and electrical contact with the P-type layer. The semiconductor device further includes front-side contacts on the epitaxial structure opposite the N-type substrate.

Abstract: A semiconductor device includes a vertical field-effect-transistor (FET) and a bypass diode. The vertical FET device includes a substrate, a drift layer formed over the substrate, a gate contact and a plurality of source contacts located on a first surface of the drift layer opposite the substrate, a drain contact located on a surface of the substrate opposite the drift layer, and a plurality of junction implants, each of the plurality of junction implants laterally separated from one another on the surface of the drift layer opposite the substrate and extending downward toward the substrate. Each of the one or more bypass diodes are formed by placing a Schottky metal contact on the first surface of the drift layer, such that each Schottky metal contact runs between two of the plurality of junction implants.

Abstract: A vertical field-effect transistor (FET) device includes a monolithically integrated bypass diode connected between a source contact and a drain contact of the vertical FET device. According to one embodiment, the vertical FET device includes a pair of junction implants separated by a junction field-effect transistor (JFET) region. At least one of the junction implants of the vertical FET device includes a deep well region that is shared with the integrated bypass diode, such that the shared deep well region functions as both a source junction in the vertical FET device and a junction barrier region in the integrated bypass diode. The vertical FET device and the integrated bypass diode may include a substrate, a drift layer over the substrate, and a spreading layer over the drift layer, such that the junction implants of the vertical FET device are formed in the spreading layer.

Abstract: A semiconductor device includes a vertical FET device and a Schottky bypass diode. The vertical FET device includes a gate contact, a source contact, and a drain contact. The gate contact and the source contact are separated from the drain contact by at least a drift layer. The Schottky bypass diode is coupled between the source contact and the drain contact and monolithically integrated adjacent to the vertical FET device such that a voltage placed between the source contact and the drain contact is distributed throughout the drift layer by the Schottky bypass diode in such a way that a voltage across each one of a plurality of P-N junctions formed between the source contact and the drain contact within the vertical FET device is prevented from exceeding a barrier voltage of the respective P-N junction.