Abstract: The silica film forming material of the present invention comprises a silicone polymer which comprises, as part of its structure, CHx, an Si—O—Si bond, an Si—CH3 bond and an Si—CHx- bond, where x represents an integer of 0 to 2.

Abstract: A disclosed semiconductor apparatus includes a substrate, a first insulating layer formed on the substrate, the first insulating layer including a Cu wiring part, and a second insulating layer formed on the substrate, the second insulating layer including a Cu via plug part electrically connected to the Cu wiring part. The first insulating layer is a porous insulating film having an elastic modulus of 5 GPa or more and a hardness of 0.6 GPa or more, and the second insulating layer has an elastic modulus of no less than 10 GPa and a hardness no less than 1 GPa.

Abstract: A silicon-containing polymer having a tetrafunctional siloxane portion as the basic skeleton, and containing a carboxylic acid group-containing triorganosiloxane portion and a carboxylic acid derivative group-containing triorganosiloxane portion in a specific proportion. It may be advantageously used as a negative non-chemical amplification resist polymer or a positive chemical amplification resist polymer.

Abstract: A negative resist composition containing an alkaline-soluble resin as a base material, in which an oxetane structure represented by the following formula (1): is contained in a structure of the alkaline-soluble resin or in a structure of a compound used in combination with the alkaline-soluble resin, is disclosed.

Abstract: A negative resist composition containing an alkaline-soluble resin as a base material, in which an oxetane structure represented by the following formula (1): is contained in a structure of the alkaline-soluble resin or in a structure of a compound used in combination with the alkaline-soluble resin, is disclosed.

Abstract: The semiconductor device fabrication method comprises the step of forming a first porous insulation film 38 over a semiconductor substrate 10; the step of forming a second insulation film 40 whose density is higher than that of the first porous insulation film 38; and the step of applying electron beams, UV rays or plasmas with the second insulation film 40 present to the first porous insulation film 38 to cure the first porous insulation film 38. The electron rays, etc. are applied to the first porous insulation film 38 through the denser second insulation film 40, whereby the first porous insulation film 38 can be cured without being damaged. The first porous insulation film 38 can be kept from being damaged, whereby the moisture absorbency and density increase can be prevented, and resultantly the dielectric constant increase can be prevented. Thus, the present invention can provide a semiconductor device including an insulation film of low dielectric constant and high mechanical strength.

Abstract: The semiconductor device fabrication method comprises the step of forming a first porous insulation film 38 over a semiconductor substrate 10; the step of forming a second insulation film 40 whose density is higher than that of the first porous insulation film 38; and the step of applying electron beams, UV rays or plasmas with the second insulation film 40 present to the first porous insulation film 38 to cure the first porous insulation film 38. The electron rays, etc. are applied to the first porous insulation film 38 through the denser second insulation film 40, whereby the first porous insulation film 38 can be cured without being damaged. The first porous insulation film 38 can be kept from being damaged, whereby the moisture absorbency and density increase can be prevented, and resultantly the dielectric constant increase can be prevented. Thus, the present invention can provide a semiconductor device including an insulation film of low dielectric constant and high mechanical strength.

Abstract: A contactor is provided which contactor comprises an insulating substrate, a concave portion formed in the insulating substrate and extending in a perpendicular direction from a surface thereof, and elastic conductive particles disposed in the concave portion. A part of one of the conductive particles protrudes from the surface of the insulating substrate.

Abstract: A contactor is provided which contactor comprises an insulating substrate, a concave portion formed in the insulating substrate and extending in a perpendicular direction from a surface thereof, and elastic conductive particles disposed in the concave portion. A part of one of the conductive particles protrudes from the surface of the insulating substrate.

Abstract: The present invention relates to an amorphous silica-based coating film with a low specific dielectric constant of 2.5 or below and the Young's modulus of 6.0 GPa or more and having excellent hydrophobic property, and to a method of forming the same. A liquid composition containing a silicon compound obtained by hydrolyzing tetraalkyl ortho silicate (TAOS) and specific alkoxysilane (AS) in the presence of tetraalkyl ammonium hydroxide (TAAOH) is prepared. The liquid composition is then applied on a substrate, heated and cured to obtain a coating film. The coating film obtained as described has a smooth surface and also has specific micropores therein.

Abstract: A low dielectric film forming material contains siloxane resin and polycarbosilane dissolved in solvent. By using this solution, a low dielectric film is formed which contains siloxane resin and polycarbosilane bonded to the siloxane resin. Material of a low dielectric film is provided which is suitable for inter-level insulating film material. A semiconductor device is also provided which has a low dielectric constant film and high reliability.

Abstract: A disclosed semiconductor apparatus includes a substrate, a first insulating layer formed on the substrate, the first insulating layer including a Cu wiring part, and a second insulating layer formed on the substrate, the second insulating layer including a Cu via plug part electrically connected to the Cu wiring part. The first insulating layer is a porous insulating film having an elastic modulus of 5 GPa or more and a hardness of 0.6 GPa or more, and the second insulating layer has an elastic modulus of no less than 10 GPa and a hardness no less than 1 GPa.

Abstract: A low dielectric film forming material contains siloxane resin and polycarbosilane dissolved in solvent. By using this solution, a low dielectric film is formed which contains siloxane resin and polycarbosilane bonded to the siloxane resin. Material of a low dielectric film is provided which is suitable for inter-level insulating film material. A semiconductor device is also provided which has a low dielectric constant film and high reliability.

Abstract: A contactor is provided which contactor comprises an insulating substrate, a concave portion formed in the insulating substrate and extending in a perpendicular direction from a surface thereof, and elastic conductive particles disposed in the concave portion. A part of one of the conductive particles protrudes from the surface of the insulating substrate.

Abstract: A contactor is provided which contactor comprises an insulating substrate, a concave portion formed in the insulating substrate and extending in a perpendicular direction from a surface thereof, and elastic conductive particles disposed in the concave portion. A part of one of the conductive particles protrudes from the surface of the insulating substrate.

Abstract: A resist composition includes a polymer principal chain, a carboxyl group having a protective group and bonding to a side chain of the polymer main chain, and an additional acidic functional group having an acid-cleavable protective group and bonding to a side chain of the polymer main chain, wherein the carboxyl group has a lactone structure represented by a formula (wherein n is an integer of 1-4, and R represents any of a hydrogen atom, an alkyl group, an alkoxyl group and an alkoxycarbonyl group and connected to an arbitrary position of said lactone structure excluding a second position forming an ester bonding) as the protective group.

Abstract: A silicon-containing polymer having a tetrafunctional siloxane portion as the basic skeleton, and containing a carboxylic acid group-containing triorganosiloxane portion and a carboxylic acid derivative group-containing triorganosiloxane portion in a specific proportion. It may be advantageously used as a negative non-chemical amplification resist polymer or a positive chemical amplification resist polymer.

Abstract: A chemically amplified resist material comprising a base resin and a photo acid generator having sensitivity at the wavelength of patterning exposure; wherein, the chemically amplified resist material further comprising an activator that generates an acid or a radical by a treatment other than the patterning exposure. A patterning method using the same is also disclosed.

Abstract: A contactor has contact electrodes elastically deformable in a direction of thickness of the contactor so that the contactor can make a contact with a semiconductor device with an appropriate contact pressure. The contactor is positioned between the semiconductor device and a test board so as to electrically connect the semiconductor device to the test board. Each of a plurality of contact electrodes has a first contact electrode part, a second contact electrode part and a connecting part electrically connecting the first contact electrode part to the second contact electrode part. The first contact electrode part contacts an electrode of the semiconductor device. The second contact electrode part contacts a terminal of the test board. A combining member has an insulating characteristic and holds the connecting part of each of the contact electrodes in a predetermined arrangement.

Abstract: The negative resist composition comprises (1) a film-forming polymer which is itself soluble in basic aqueous solutions, and contains a first monomer unit with an alkali-soluble group in the molecule and a second monomer unit with an alcohol structure on the side chain which is capable of reacting with the alkali-soluble group, and (2) a photo acid generator which, when decomposed by absorption of image-forming radiation, is capable of generating an acid that can induce reaction between the alcohol structure of the second monomer unit and the alkali-soluble group of the first monomer unit, or protect the alkali-soluble group of the first monomer unit. The resist composition can form intricate negative resist patterns with practical sensitivity and no swelling.