Abstract: A novel chemical amplification resist composition which comprises an alkali-soluble base resin, a photoacid generator and a dissolution inhibitor and in which a cyclic or acyclic structure constituting a matrix portion of the molecule of said dissolution inhibitor contains at least one lone pair-containing portion which can provide a hydrogen bond sufficient to shift and gather an alkali-soluble moiety of said base resin to and on a side of said molecule of the dissolution inhibitor compound. The resist composition can exhibit both excellent sensitivity and resolution and accordingly can be utilized in the formation of very fine resist patterns in a lithographic process. A method for forming such resist patterns is also disclosed.

Abstract: A resist pattern thickening material comprises a resin, a crosslinking agent and a water-soluble aromatic compound. A resist pattern comprises an upperlayer on an underlayer resist pattern with an etching rate (Å/s) ratio of the underlayer resist pattern to the upper layer under the same condition of 1.1 or more, or comprises an upperlayer containing an aromatic compound on an underlayer resist pattern. A method for forming a resist pattern comprises applying a resist pattern thickening material after forming an underlayer resist pattern, on the surface of the pattern. A semiconductor device comprises a pattern formed by the resist pattern. A method for manufacturing the semiconductor device comprises applying after forming an underlayer resist pattern on an underlying layer, the thickening material to the surface of the pattern to thicken the pattern, and patterning the underlying layer by etching using the pattern as a mask.

Abstract: The resist material contains a photo-acid generator having an absorption peak to exposure light having a wavelength of less than 300 nm, and a second photo-acid generator having an absorption peak to exposure light having a wavelength of 300 nm or more. The method for forming a resist pattern comprises a step for selectively exposing which exposes a coating film of the resist material to an exposure light having a wavelength of less than 300 nm, and a step for selectively exposing by using an exposure light having a wavelength of 300 nm or more. The semiconductor device comprises a pattern formed by the resist pattern. The method for forming a semiconductor device comprises a step for forming a resist pattern on an underlying layer by the aforementioned manufacturing method, and a step for patterning the underlying layer by etching using the resist pattern as a mask.

Abstract: Disclosed is a method of readily removing particles from a stage, that is, a stage particle removing method for removing particles from a stage that holds a planar workpiece. A resin film is placed on the stage, and collected from the stage. The resin film is coated over at least one surface of the planar workpiece such as a semiconductor wafer or glass substrate. The resin film is brought into contact with the stage. The resin film may not be coated over the planar workpiece itself but may be coated over a dedicated planar piece shaped similarly to the planar workpiece, for example, a thin metallic plate that is very smooth. The used resin film is peeled off from the planar workpiece or dedicated planar piece, and the resin film is coated again. Thus, the planar workpiece or dedicated planar piece can be reused.

Abstract: Porous insulation films 28, 40, 50 are formed of an insulation forming material including a silicon compound having a skeleton containing C—C bonds, a pore forming compound which is decomposed or evaporated by a heat treatment, and a solvent which dissolves the silicon compound with the pore forming compound, whereby the porous insulation film can have good mechanical strength and low dielectric constant.

Abstract: A novel chemical amplification resist composition which comprises an alkali-soluble base resin, a photoacid generator and a dissolution inhibitor and in which a cyclic or acyclic structure constituting a matrix portion of the molecule of said dissolution inhibitor contains at least one lone pair-containing portion which can provide a hydrogen bond sufficient to shift and gather an alkali-soluble moiety of said base resin to and on a side of said molecule of the dissolution inhibitor compound. The resist composition can exhibit both excellent sensitivity and resolution and accordingly can be utilized in the formation of very fine resist patterns in a lithographic process. A method for forming such resist patterns is also disclosed.

Abstract: A contactor is provided which contactor comprises an insulating substrate, a concave portion formed in the insulating substrate and extending in a perpendicular direction from a surface thereof, and elastic conductive particles disposed in the concave portion. A part of one of the conductive particles protrudes from the surface of the insulating substrate.

Abstract: A silicon-containing polymer having a tetrafunctional siloxane portion as the basic skeleton, and containing a carboxylic acid group-containing triorganosiloxane portion and a carboxylic acid derivative group-containing triorganosiloxane portion in a specific proportion. It may be advantageously used as a negative non-chemical amplification resist polymer or a positive chemical amplification resist polymer.

Abstract: The negative resist composition comprises (1) a film-forming polymer which is itself soluble in basic aqueous solutions, and contains a first monomer unit with an alkali-soluble group in the molecule and a second monomer unit with an alcohol structure on the side chain which is capable of reacting with the alkali-soluble group, and (2) a photo acid generator which, when decomposed by absorption of imaage-forming radiation, is capable of generating an acid that can induce reaction between the alcohol structure of the second monomer unit and the alkali-soluble group of the first monomer unit, or protect the alkali-soluble group of the first monomer unit. The resist composition can form intricate negative resist patterns with practical sensitivity and no swelling.

Abstract: A composition comprising a siloxane resin, a silicon compound substantially consisting of silicon, carbon and hydrogen, wherein the number ratio of carbon to silicon atoms forming an —X— bond (wherein X is (C)m (where m is an integer in the range of from 1 to 3), or a substituted or unsubstituted aromatic group with 9 or less carbon atoms) in the main chain of one molecule is in the range of from 2:1 to 12:1, and a solvent, is subjected to a heat treatment to form a low dielectric constant film. Accordingly, a low dielectric constant film having excellent resistance against chemicals and excellent moisture resistance is provided. A semiconductor integrated circuit having a fast response can be produced by using the film.

Abstract: A negative resist composition containing an alkaline-soluble resin as a base material, in which an oxetane structure represented by the following formula (1): 1

Abstract: A resist composition comprising, in a resist, an additive which has a melting point-of 160° C. or above, contains no aromatic ring, has a molecular size of no greater than 50 Å and is soluble in the developing solution for the resist, at 1-50 parts by weight with respect to 100 parts by solid weight of the resist, as well as a pattern forming process employing it. It thereby becomes possible to obtain high-resolution resist patterns.

Abstract: A chemical amplification resist composition comprising an acid sensitive copolymer wherein the protecting group of a protected carboxyl group bonded to the side chain of a first monomer unit is represented by the following formula (I): where R1 represents hydrogen or another substituent, L represents a linking group and n is an integer of 1 to 4, and a second monomer unit has an acidic functional group protected with an acid-unstable protecting group, bonded to its side chain. It can be used to form fine resist patterns that have practically usable sensitivity and undergo no swelling.

Abstract: A silicon-containing polymer having a tetrafunctional siloxane portion as the basic skeleton, and containing a carboxylic acid group-containing triorganosiloxane portion and a carboxylic acid derivative group-containing triorganosiloxane portion in a specific proportion. It may be advantageously used as a negative non-chemical amplification resist polymer or a positive chemical amplification resist polymer.

Abstract: A method for manufacturing a magnetoresistance head of the present invention comprises the steps of forming an organic film on a multilayered film constituting a magnetoresistance device, forming an upper film formed of resist or inorganic film on the organic film, patterning the organic film and the upper film, cutting into edges of the organic film patterns from edges of the upper film patterns inwardly to such an extent that particles of the thin film being formed on the upper film and the multilayered film do not contact to side portions of the organic film patterns.

Abstract: A contactor has contact electrodes elastically deformable in a direction of thickness of the contactor so that the contactor can make a contact with a semiconductor device with an appropriate contact pressure. The contactor is positioned between the semiconductor device and a test board so as to electrically connect the semiconductor device to the test board. Each of a plurality of contact electrodes has a first contact electrode part, a second contact electrode part and a connecting part electrically connecting the first contact electrode part to the second contact electrode part. The first contact electrode part contacts an electrode of the semiconductor device. The second contact electrode part contacts a terminal of the test board. A combining member has an insulating characteristic and holds the connecting part of each of the contact electrodes in a predetermined arrangement.

Abstract: A negative resist composition comprises at least a constituent component which has a vinyl ether structure protected with an acetal in a molecule thereof. In the formation of negative resist patterns, an aqueous basic solution can be used without swelling.

Abstract: A contactor is provided which contactor comprises an insulating substrate, a concave portion formed in the insulating substrate and extending in a perpendicular direction from a surface thereof, and elastic conductive particles disposed in the concave portion. A part of one of the conductive particles protrudes from the surface of the insulating substrate.

Abstract: A silicon-containing polymer having a tetrafunctional siloxane portion as the basic skeleton, and containing a carboxylic acid group-containing triorganosiloxane portion and a carboxylic acid derivative group-containing triorganosiloxane portion in a specific proportion. It may be advantageously used as a negative non-chemical amplification resist polymer or a positive chemical amplification resist polymer.

Abstract: A semiconductor encapsulating resin composition which is powdery particles of a resin composition comprising an epoxy resin, a curing agent and an inorganic filler, and produced through a series of unit operations inclusive of melt-kneading and pulverization of a raw material mixture, wherein foreign metal having magnetic property originating from metal materials constituting production apparatuses used in the unit operations and contained in the powdery particles are selectively recovered and removed by a drum type metal classification-recovering apparatus. This semiconductor encapsulating resin composition provides a high reliability semiconductor device not containing magnetic foreign metal.