Abstract: There is provided a cleaning method for removing a first deposit, formed on an upper electrode through an etching of a metal layer containing a metal, by using a plasma generated between a lower electrode of a lower structure and the upper electrode in a processing chamber of a plasma processing apparatus. The method includes a step of colliding ions with the first deposit formed on the upper electrode and a step of removing a second deposit, which is generated by said colliding and formed on the lower structure. Further, a cycle including the step of colliding and the step of removing is repeated multiple times.

Abstract: An apparatus for processing reaction products that are deposited when an etching target film contained in a target object to be processed is etched is provided with: a processing chamber; a partition plate; a plasma source; a mounting table; a first processing gas supply unit; a second processing gas supply unit. The processing chamber defines a space, and the partition plate is arranged within the processing chamber and divides the space into a plasma generating space and a substrate processing space, while suppressing permeation of ions and vacuum ultraviolet rays. The plasma source generates a plasma in the plasma forming space. The mounting table is arranged in the substrate processing space to mount the target object thereon.

Abstract: There is provided a method of processing a target object to be processed including a porous film and a mask. The method include supplying a first gas into a processing chamber of a plasma processing apparatus in which the target object including the porous film is accommodated, and generating a plasma of a second gas in the processing chamber to remove the mask. The first gas is a processing gas having a saturated vapor pressure of less than or equal to 133.3 Pa at a temperature of a stage on which the target object is mounted in the processing chamber, or includes the processing gas. In the step of supplying the first gas, no plasma is generated, and a partial pressure of the processing gas supplied into the processing chamber is greater than or equal to 20% of the saturated vapor pressure.

Abstract: An apparatus for processing reaction products that are deposited when an etching target film contained in a target object to be processed is etched is provided with: a processing chamber; a partition plate; a plasma source; a mounting table; a first processing gas supply unit; a second processing gas supply unit. The processing chamber defines a space, and the partition plate is arranged within the processing chamber and divides the space into a plasma generating space and a substrate processing space, while suppressing permeation of ions and vacuum ultraviolet rays. The plasma source generates a plasma in the plasma forming space. The mounting table is arranged in the substrate processing space to mount the target object thereon.

Abstract: A method of etching a porous film is provided. The method includes supplying a first gas into a processing chamber of a plasma processing apparatus in which an object to be processed including a porous film is accommodated, and generating a plasma of a second gas for etching the porous film in the processing chamber. The first gas is a processing gas having a saturated vapor pressure of less than or equal to 133.3 Pa at a temperature of a stage on which the object is mounted in the processing chamber, or includes the processing gas. In the step of supplying the first gas, no plasma is generated, and a partial pressure of the processing gas which is supplied into the processing chamber is set to be greater than or equal to 20% of the saturated vapor pressure.

Abstract: A method according to an exemplary embodiment includes: (a) etching an upper magnetic layer by plasma generated within a processing container, the etching of the upper magnetic layer being terminated on a surface of an insulating layer; (b) removing a deposit formed on a surface of the mask and the upper magnetic layer by etching the upper magnetic layer, by the plasma generated within the processing container; and (c) etching the insulating layer by the plasma generated within the processing container. In the step of removing the deposit, the support structure that holds a processing target is inclined and rotated, and a pulse-modulated DC voltage as a bias voltage for ion attraction is applied to the support structure.

Abstract: There is provided a cleaning method for removing a first deposit, formed on an upper electrode through an etching of a metal layer containing a metal, by using a plasma generated between a lower electrode of a lower structure and the upper electrode in a processing chamber of a plasma processing apparatus. The method includes a step of colliding ions with the first deposit formed on the upper electrode and a step of removing a second deposit, which is generated by said colliding and formed on the lower structure. Further, a cycle including the step of colliding and the step of removing is repeated multiple times.

Abstract: A method of an embodiment includes: mounting a workpiece, which includes the magnetic layer, on an electrostatic chuck provided in a processing container of a plasma processing apparatus; and etching the magnetic layer to generate plasma of a processing gas including isopropyl alcohol and carbon dioxide in the processing container. In an embodiment, a pressure of a space in the processing container is set to be 1.333 Pa or less, a temperature of the electrostatic chuck is set to be ?15° C. or lower, and a partial pressure of isopropyl alcohol is set to be equal to or lower than a saturation vapor pressure of the isopropyl alcohol.

Abstract: There is provided a cleaning method for removing a first deposit, formed on an upper electrode through an etching of a metal layer containing a metal, by using a plasma generated between a lower electrode of a lower structure and the upper electrode in a processing chamber of a plasma processing apparatus. The method includes a step of colliding ions with the first deposit formed on the upper electrode and a step of removing a second deposit, which is generated by said colliding and formed on the lower structure. Further, a cycle including the step of colliding and the step of removing is repeated multiple times.

Abstract: A method of etching a porous film is provided. The method includes supplying a first gas into a processing chamber of a plasma processing apparatus in which an object to be processed including a porous film is accommodated, and generating a plasma of a second gas for etching the porous film in the processing chamber. The first gas is a processing gas having a saturated vapor pressure of less than or equal to 133.3 Pa at a temperature of a stage on which the object is mounted in the processing chamber, or includes the processing gas. In the step of supplying the first gas, no plasma is generated, and a partial pressure of the processing gas which is supplied into the processing chamber is set to be greater than or equal to 20% of the saturated vapor pressure.

Abstract: A method of an embodiment includes: mounting a workpiece, which includes the magnetic layer, on an electrostatic chuck provided in a processing container of a plasma processing apparatus; and etching the magnetic layer to generate plasma of a processing gas including isopropyl alcohol and carbon dioxide in the processing container. In an embodiment, a pressure of a space in the processing container is set to be 1.333 Pa or less, a temperature of the electrostatic chuck is set to be ?15° C. or lower, and a partial pressure of isopropyl alcohol is set to be equal to or lower than a saturation vapor pressure of the isopropyl alcohol.

Abstract: An etching method is provided for etching a multilayer film material that includes a metal laminated film having an insulating layer arranged between a first magnetic layer and a second magnetic layer. The etching method includes an etching step of generating a plasma by supplying a first gas to a processing chamber and etching the metal laminated film using the generated plasma. The first gas is a gas containing PF3 gas.

Abstract: A method of etching a porous film is provided. The method includes supplying a first gas into a processing chamber of a plasma processing apparatus in which an object to be processed including a porous film is accommodated, and generating a plasma of a second gas for etching the porous film in the processing chamber. The first gas is a processing gas having a saturated vapor pressure of less than or equal to 133.3 Pa at a temperature of a stage on which the object is mounted in the processing chamber, or includes the processing gas. In the step of supplying the first gas, no plasma is generated, and a partial pressure of the processing gas which is supplied into the processing chamber is set to be greater than or equal to 20% of the saturated vapor pressure.

Abstract: Provided is a method of etching a copper layer. The method includes generating plasma of a processing gas within a processing container which accommodates an object to be processed that includes the copper layer and a metal mask formed on the copper layer. The metal mask contains titanium. In addition, the processing gas includes CH4 gas, oxygen gas, and a noble gas. In an exemplary embodiment, the metal mask may include a layer made of TiN.

Abstract: In a method according to one embodiment, a first processing gas is supplied into a processing container of a plasma processing apparatus, and a plasma of the first processing gas is generated to etch an upper magnetic layer by the plasma of the first processing gas. Subsequently, a deposit, which is generated due to the etching of the upper magnetic layer, is removed. The removal of the deposit includes allowing a reduction reaction to occur in the deposit by a plasma of a second processing gas that contains H2 gas, and removing a product, which is generated by the reduction reaction, by using a third processing gas that contains hexafluoroacetylacetone.

Abstract: In a plasma processing apparatus according to an exemplary embodiment, a gas supply system supplies a gas into a processing container. A plasma source excites the gas supplied by the gas supply system. A support structure holds a processing target within the processing container. The support structure is configured to rotatably and tiltably support the processing target. The plasma processing apparatus further includes a bias power supply unit that applies a pulse-modulated DC voltage, as a bias voltage for ion attraction, to the support structure.

Abstract: A method according to an exemplary embodiment includes: (a) etching an upper magnetic layer by plasma generated within a processing container, the etching of the upper magnetic layer being terminated on a surface of an insulating layer; (b) removing a deposit formed on a surface of the mask and the upper magnetic layer by etching the upper magnetic layer, by the plasma generated within the processing container; and (c) etching the insulating layer by the plasma generated within the processing container. In the step of removing the deposit, the support structure that holds a processing target is inclined and rotated, and a pulse-modulated DC voltage as a bias voltage for ion attraction is applied to the support structure.

Abstract: An etching apparatus includes a controller configured to control a high frequency power supply to supply a high frequency power to a mounting table for etching a polymer layer formed on a base layer placed on the mounting table, using plasma generated from a predetermined gas supplied from a gas supply source by the high frequency power, the polymer layer having a periodic pattern of a first polymer and a second polymer formed by self-assembling the first polymer and the second polymer of a block copolymer that is capable of being self-assembled, the high frequency power being set for etching the polymer layer using the generated plasma such that the second polymer is removed and a pattern of the first polymer is formed for subsequently etching the base layer using the pattern of the first polymer as a mask.

Abstract: A plasma processing method of etching a multilayered material having a structure where a first magnetic layer 105 and a second magnetic layer 103 are stacked with an insulating layer 104 therebetween is performed by a plasma processing apparatus 10 including a processing chamber 12 where a processing space S is formed; and a gas supply unit 44 of supplying a processing gas into the processing space, and includes a first etching process where the first magnetic layer is etched by supplying a first processing gas and generating plasma, and the first etching process is stopped on a surface of the insulating layer; and a second etching process where a residue Z is removed by supplying a second processing gas and generating plasma. The first magnetic layer and the second magnetic layer contain CoFeB, the first processing gas contains Cl2, and the second processing gas contains H2.

Abstract: In a method according to one embodiment, a first processing gas is supplied into a processing container of a plasma processing apparatus, and a plasma of the first processing gas is generated to etch an upper magnetic layer by the plasma of the first processing gas. Subsequently, a deposit, which is generated due to the etching of the upper magnetic layer, is removed. The removal of the deposit includes allowing a reduction reaction to occur in the deposit by a plasma of a second processing gas that contains H2 gas, and removing a product, which is generated by the reduction reaction, by using a third processing gas that contains hexafluoroacetylacetone.