Abstract: The semiconductor laser device includes a base member having a recess that opens upward, a semiconductor laser element disposed on a bottom surface of the recess, and a light reflecting member being disposed forward of a light emitting surface of the semiconductor laser element and including a light reflecting surface to reflect laser light emitted from the semiconductor laser element. The semiconductor laser element and the light reflecting member are arranged such that a direction of an optical axis of light that is reflected by the light reflecting member is different from a direction that is perpendicular to a lower surface of the base member.

Abstract: A semiconductor laser device includes a semiconductor laser element; a mounting body on which the semiconductor laser element is mounted; a base having a recess in which the mounting body is mounted and a through hole that penetrates a part of a bottom of the recess; and an embedded member disposed within the through hole. An uppermost surface of the embedded member is joined to a lowermost surface of the mounting body and a lowermost surface of the embedded member is positioned higher than a lowermost surface of the base.

Abstract: A light source apparatus includes two or more light sources placed in one direction, and an array lens having two or more lenses, which corresponds to each of the light sources. In order to condense a light emitted from each of the lenses into one position, in a first lens in each of the lenses, an optical axis of the light source which corresponds to the first lens is shifted from an optical axis of said first lens in said one direction. The first lens is formed such that a length from the optical axis to one end of said first lens in the one direction is longer than a length from the optical axis to another end of the first lens in a direction which is opposite to the one direction.

Abstract: A semiconductor laser device can include an insulating single crystal SiC having a first surface, a second surface, and micropipes having openings in the first surface and the second surface. A conductive base can be provided on a side of the first surface of the single crystal SiC, and a semiconductor laser element can be provided on a side of the second surface of the single crystal SiC. An insulating member can be formed in the micropipes.

Abstract: A semiconductor laser device can include an insulating single crystal SiC having a first surface, a second surface, and micropipes having openings in the first surface and the second surface. A conductive base can be provided on a side of the first surface of the single crystal SiC, and a semiconductor laser element can be provided on a side of the second surface of the single crystal SiC. An insulating member can be formed in the micropipes.

Abstract: A semiconductor laser device having stable heat dissipation property is provided. The semiconductor laser device includes a semiconductor laser element, a mounting body on which the semiconductor laser element is mounted, and a base body connected to the mounting body. The base body has a recess configured to engage with the mounting body and a through portion penetrating through a part of a bottom of the recess. In the specification, the remainder, which is a part of the bottom of the recess except for the through portion has a thickness equal or less than half of the largest thickness of the base body. The lowermost surface of the mounting body is spaced apart from the lowermost surface of the base body through the remainder.

Abstract: A light emitting device includes a semiconductor laser element configured to emit laser light having a peak wavelength of 460 nm or less; a base body having a through-hole through which the laser light passes from a bottom to a top of the base body; a fluorescent member disposed so as to close the through-hole; and a filter configured to reflect fluorescence from the fluorescent member, the filter being disposed below the fluorescent member at a position above and spaced apart from a plane including a lower end of the through-hole. At least in a portion lower than the filter, an inner surface of the base body defining the through-hole includes an inclination surface that is inclined such that the through-hole expands from a lower part of the through-hole toward an upper part of the through-hole. A reflection layer containing aluminum is formed on the inclination surface.

Abstract: Provided is a light source unit that includes: one or more kinds of phosphor; a substrate, on which the one or more kinds of phosphor is applied; a plurality of semiconductor laser elements arrayed at a predetermined interval in a package, wherein each of the semiconductor laser elements emits a laser light beam through a light emission region; and a first optical system that comprises a first lens system, a multiplexing optical member having a light entering surface and a light exiting surface, and a second lens system, wherein the first optical system directs the laser light beams emitted from the respective semiconductor laser elements toward the substrate, the first lens system receives the laser light beams emitted from the respective semiconductor laser elements directly without substantial parallelization of the respective received laser light beams, and condenses the received laser light beams on the light entering surface of the multiplexing optical member, the multiplexing optical member multiplexes

Abstract: A semiconductor laser device can include an insulating single crystal SiC having a first surface, a second surface, and micropipes having openings in the first surface and the second surface. A conductive base can be provided on a side of the first surface of the single crystal SiC, and a semiconductor laser element can be provided on a side of the second surface of the single crystal SiC. An insulating member can be formed in the micropipes.