Abstract: An apparatus of forming thin films, which is small and requires a short thin-film formation time, is provided which comprises at least one physical vapor deposition device and at least one chemical vapor deposition device, wherein said physical vapor deposition device and said chemical vapor deposition device are provided with an exhaust pipe respectively for connection with a common exhaust means and an exhaust switching means. A method of forming thin films using this apparatus is also provided. According to the configuration in which the exhaust switching means is connected via exhaust pipes to the physical vapor deposition device, to the chemical vapor deposition device, and to the exhaust means, this apparatus can be accomplished in a small size which has at least two chambers and one exhaust means.

Abstract: A ferroelectric thin film includes lead titanate including La and at least an element which forms a six-coordinate bond with oxygen atoms and which is selected from the group consisting of Mg and Mn. The ferroelectric thin film is imparted with a high c-axis orientation while the film is formed without a polarization process. The ferroelectric thin film is manufactured by the steps of: positioning a MgO single crystal substrate disposed in advance with a foundation platinum electrode by a sputtering method on the surface of a substrate heater, exhausting a chamber, heating the substrate by a substrate heater, letting in sputtering gases Ar and O.sub.2 through a nozzle into the chamber, and maintaining a high degree of vacuum. Then, high frequency electric power is input to a target from a high frequency electric power source to generate plasma, and a film is formed on the substrate. In this way, a ferroelectric thin film containing, for example, ?(1-x).multidot.Pb.sub.1-y La.sub.y Ti.sub.1-y/4 O.sub.3 +x.

Abstract: A semiconductor device comprising an integrated circuit and a capacitor. In this capacitor, a bottom electrode, a dielectric film and a top electrode are formed, independently of the integrated circuit, on the interlayer insulating film, and the top electrode and bottom electrode are connected with metal interconnections through contact holes opened in the protective film for protecting the surface of the capacitor. In this constitution, either the top electrode or the bottom electrode is connected the bias line of the integrated circuit, and the other is connected to the ground line, so that extraneous emission may be reduced without having to connect the capacitor outside.

Abstract: The present invention relates to a process for producing crystallographic oriented oxide thin films having an NaCl-type structure, a spinel structure or a Wurtzite structure used as a buffer layer to obtain a functional oxide thin film such as a superconductive oxide thin film and a ferroelectric thin film, and a chemical vapor deposition apparatus used therefor. A rotatable substrate holder is provided in a reaction chamber. The substrate holder, which holds substrates thereunder, includes a substrate heater. The substrate holder is grounded to provide an electrode. Another electrode, which is connected to a high frequency power source, is located opposing the substrate holder in the reaction chamber. At a side wall of the reaction chamber, an exhaust is arranged. In a plasma electric discharge area formed between the substrate holder and the electrode, a material gas supplier is located, having a predetermined tilt angle .theta. with respect to the substrate holder.

Abstract: A laminated thin film capacitor having a substrate, at least two electrode layers, at least one dielectric layer and a pair of external electrode which are placed on respective side walls of the capacitor, wherein the metal electrode layer and the dielectric layers are laminated alternately on the substrate, and every other metal electrode layers are exposed on each of side walls of the capacitor, which capacitor is excellent in dielectric properties such as a high capacity per unit volume.

Abstract: This is a semiconductor device having an integrated circuit and a capacitor formed on a semiconductor substrate. The capacitor comprises a bottom electrode serving also as a part of a diffusion layer of the integrated circuit, a dielectric film being formed on the bottom electrode, and a top electrode of a conductive film being formed on the dielectric film. In particular, it is preferred to form the dielectric film in two layers of dielectric film, and compose the dielectric film contacting with the bottom electrode of a dielectric material in a composition possessing an excess of a metal element than the stoichiometric composition.

Abstract: A platinum bottom electrode film, a dielectric film composed of a high permittivity dielectric material or a ferroelectric material, and a platinum top electrode film are formed on a substrate on which circuit elements and wiring are formed, and the platinum top electrode film and the dielectric film are selectively dry-etched by using etching gas containing chlorine, then plasma generated by discharging gas containing fluorine is irradiated. By this method of manufacturing a semiconductor device including a capacitor, there is almost no residual chlorine, and hence erosion of the dielectric film by residual chlorine is prevented.

Abstract: A semiconductor device comprising: (a) a semiconductor substrate on whose surface an integrated circuit is formed, (b) a first insulating layer formed on the semiconductor device and having first contact holes which lead to the integrated circuit, (c) a capacitance element formed on the first insulating layer, (d) a second insulating layer formed on the first insulating layer to cover the capacitance element, and having second contact holes which lead to an upper and a lower electrodes of the capacitance element respectively, and (e) interconnections which are connected to the integrated circuit and the capacitance element respectively through the first and second contact holes. The hydrogen density of this semiconductor device is 10.sup.11 atoms/cm.sup.2 or less.

Abstract: A semiconductor device forming a capacitor through an interlayer insulating layer on a semiconductor substrate on which an integrated circuit is formed. This semiconductor device has an interlayer insulating layer with moisture content of 0.5 g/cm.sup.3 or less, which covers the capacitor in one aspect, and has a passivation layer with hydrogen content of 10.sup.21 atoms/cm.sup.3 or less, which covers the interconnections of the capacitor in other aspect. By thus constituting, deterioration of the capacitor dielectric can be prevented which brings about the electrical reliability of the ferroelectric layer or high dielectric layer.

Abstract: A surface wave filter element includes a portion on which elastic surface waves propagate. This portion includes a piezoelectric material, an amorphous boron layer or plate and IDT electrodes for inputting and outputting signals. The piezoelectric material is a film made of ZnO, LiNbO.sub.3 or LiTaO.sub.3 formed by sputtering, ion beam deposition or chemical vapor deposition. The amorphous boron layer or boron plate may be formed on a substrate made of an inorganic material. The boron material is formed using electron beam deposition, ion beam deposition or chemical vapor deposition.

Abstract: A laminated thin film capacitor having a substrate, at least two electrode layers, at least one dielectric layer and a pair of external electrode which are placed on respective side walls of the capacitor, wherein the metal electrode layer and the dielectric layers are laminated alternately on the substrate, and every other metal electrode layers are exposed on each of side walls of the capacitor, which capacitor is excellent in dielectric properties such as a high capacity per unit volume.

Abstract: A NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal electrode are sequentially laminated on a metal electrode, thus providing a thin film capacitor. Or alternatively, a thin film capacitor is manufactured by sequentially laminating a NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a platinum thin layer as a lower electrode oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal thin layer as an upper electrode on a substrate. A plasma-enhanced CVD method is applied to form a NaCl oxide thin layer, a spinel oxide thin layer and a perovskite dielectric thin layer while a vacuum deposition method, a sputtering method, a CVD method or a plasma-enhanced CVD method is applied for the formation of a metal electrode.

Abstract: A magnetic recording medium, comprising; a 2-layer film formed on a glass disk substrate as an under layer composed of an amorphous oxide or NaCl oxides like a NiO or CoO and the like, or any soft magnetic oxide of Mn-Zn ferrite, Ni-Zn ferrite and the like, or a combination of those 2 materials; a magnetic recording medium formed thereon composed of a Co ferrite perpendicular magnetic film of a columnar structure; and a structure formed thereon with a lubricant layer medium. This magnetic recording medium is used for a magnetic rigid disk apparatus. The substrate is made by press-molding the glass plate at a high temperature. The under layer film and Co ferrite film are composed of vapors of organic material compounds and oxygen as their raw materials, and made by a plasma assisted CVD method.

Abstract: An image display device includes thin film transistors and pixel electrodes arranged in matrix form on a substrate. A semiconductor layer forming a channel region of the thin film transistor also serves as the pixel electrode, thereby making the structure of the device simple and facilitating fabrication thereof.

Abstract: An image recording apparatus for recording an image of an original document on a photosensitive, pressure-sensitive recording medium by exposing the recording medium to imaging light to form a latent image thereon and pressure developing the latent image. The size of the latent image to be formed on the recording medium is detected and a color of a marginal portion surrounding the image portion is specified through an operation unit. An LED array is arranged upstream of an exposure station and in a direction to transverse the recording medium for irradiating light onto the marginal portion of the recording medium so that the marginal portion is reproduced with the color as specified.

Abstract: A liquid crystal display apparatus in which leakage of light caused by signal lines can be eliminated is disclosed. In the liquid crystal display apparatus, a predetermined potential corresponding to the black level is applied to the video signal lines during a period of time other than the horizontal blanking period, and image signals are transferred to one row of the pixels through the signal lines which the horizontal blanking period.

Abstract: Disclosed is a method of forming a Perovskite-type dielectric film on a substrate under low temperature by decomposing and reacting vapor of organometallic compound containing metal for the dielectric, vapor of organometallic compound containing titanium, and oxygen in a reduced-pressure and plasma.

Abstract: Disclosed herein is a perpendicular magnetic film of spinel type iron oxide formed on a surface of a base substrate in the form of columnar grains which are densely arranged perpendicularly to the surface of the base substrate. A vapor of an organic iron compound or a mixed vapor consisting of the organic iron compound vapor and a vapor of an organic metal compound different from the organic iron compound is added with oxygen to obtain a mixed gas. The mixed gas is subjected to chemical vapor deposition on the substrate at low temperature, at reduced pressure in plasma, thereby to obtain the perpendicular magnetic film.

Abstract: Disclosed is a composite magnetic powder comprising two crystal phases of a hexagonal ferrite portion and a spinel structure ferrite portion, which are different in thermal characteristic and in crystal structure and which are in a crystallographically epitaxial relation in each particle. The magnetic powder can be synthesized by reaction of starting components in a low temperature solution. Using the magnetic powder, a vertical magnetic recording medium can be provided, which is excellent in weather stability and suitable for short wavelength recording.

Abstract: On a cemented carbide alloy disk or a cermet disk having been coated with either an iridium (Ir) alloy film or a ruthenium (Ru) alloy film is formed guide grooves by photography or ECR ion etching. The disk thus obtained is used as an optical or magnetic disk stamper. Next, a glass or aluminium disk is placed between a pair of stampers obtained as above and molded under pressure while heating thereby to make guide grooves of an optical or magnetic disk.