Patents by Inventor Eiji Kitagawa

Eiji Kitagawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210083170
    Abstract: According to one embodiment, a magnetic memory device includes a substrate, a first layer stack, and a second layer stack at a same side of the first layer stack relative to the substrate, and farther than the first layer stack from the substrate. Each of the first and second layer stack includes a reference layer, a tunnel barrier layer provided in a direction relative to the reference layer, the direction being perpendicular to the substrate, a storage layer provided in the direction relative to the tunnel barrier layer, and a first nonmagnetic layer provided in the direction relative to the storage layer. A heat absorption rate of the first nonmagnetic layer of the first layer stack is lower than a heat absorption rate of the first nonmagnetic layer of the second layer stack.
    Type: Application
    Filed: March 12, 2020
    Publication date: March 18, 2021
    Applicant: KIOXIA CORPORATION
    Inventors: Kazuya SAWADA, Young Min EEH, Eiji KITAGAWA, Taiga ISODA, Tadaaki OIKAWA, Kenichi YOSHINO
  • Publication number: 20210074908
    Abstract: According to one embodiment, a magnetic device includes a layer stack. The layer stack includes a first ferromagnetic layer, a second ferromagnetic layer, a first nonmagnetic layer between the first ferromagnetic layer and the second ferromagnetic layer, and a second nonmagnetic layer. The first ferromagnetic layer is interposed between the second nonmagnetic layer and the first nonmagnetic layer. The first nonmagnetic layer and the second nonmagnetic layer contain a magnesium oxide (MgO). The first ferromagnetic layer contains a higher amount of boron (B) at an interface with the first nonmagnetic layer than at an interface with the second nonmagnetic layer.
    Type: Application
    Filed: March 12, 2020
    Publication date: March 11, 2021
    Applicant: KIOXIA CORPORATION
    Inventors: Tadaaki OIKAWA, Young Min EEH, Kenichi YOSHINO, Eiji KITAGAWA, Kazuya SAWADA, Taiga ISODA
  • Publication number: 20210074911
    Abstract: According to one embodiment, a magnetoresistive memory device includes: a first ferromagnetic layer; a stoichiometric first layer; a first insulator between the first ferromagnetic layer and the first layer; a second ferromagnetic layer between the first insulator and the first layer; and a non-stoichiometric second layer between the second ferromagnetic layer and the first layer. The second layer is in contact with the second ferromagnetic layer and the first layer.
    Type: Application
    Filed: March 10, 2020
    Publication date: March 11, 2021
    Applicants: KIOXIA CORPORATION, SK HYNIX INC.
    Inventors: Taiga ISODA, Eiji KITAGAWA, Young Min EEH, Tadaaki OIKAWA, Kazuya SAWADA, Kenichi YOSHINO, Jong Koo LIM, Ku Youl JUNG, Guk Cheon KIM
  • Patent number: 10922962
    Abstract: A congestion management apparatus includes a memory configured to store, on a per-action-option basis, upper limits on numbers of users allowed to be guided to action options, and a processor coupled to the memory and configured to: generate the action options by time slot for a user; calculate for each of the generated action options, choice probabilities of the action options with respect to the user, and store the calculated choice probabilities in the memory; and calculate for each of the action options, estimated numbers of previous users assumed to have selected the action options, based on choice probabilities of each of the action options with respect to the previous users, the choice probabilities being obtained from the memory, wherein the processor is configured to extract, based on the upper limits and the estimated numbers for the action options, action options to be presented to the user.
    Type: Grant
    Filed: September 19, 2018
    Date of Patent: February 16, 2021
    Assignee: FUJITSU LIMITED
    Inventors: Takuro Ikeda, Eiji Kitagawa, Vishal Sharma
  • Publication number: 20210014592
    Abstract: A non-transitory computer-readable storage medium storing a program that causes a computer to execute a process, the process includes acquiring first sound data collected by a first microphone and second sound data collected by a second microphone during traveling of a vehicle in which the first microphone is provided in vicinity of a front wheel and the second microphone is provided in vicinity of a rear wheel; and detecting a cavity under a road surface where the vehicle has traveled based on a difference between the acquired first sound data and the acquired second sound data.
    Type: Application
    Filed: June 30, 2020
    Publication date: January 14, 2021
    Applicant: FUJITSU LIMITED
    Inventors: Eiji Kitagawa, Isamu Watanabe, Hitoshi Komoriya
  • Patent number: 10840434
    Abstract: According to an embodiment, a storage device includes a resistance change element. The resistance change element includes a stacked structure including a first ferromagnet, a second ferromagnet, and a first nonmagnet between the first ferromagnet and the second ferromagnet. The first nonmagnet includes a boron-doped rare-earth oxide.
    Type: Grant
    Filed: March 13, 2019
    Date of Patent: November 17, 2020
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Eiji Kitagawa, Young Min Eeh, Tadaaki Oikawa, Kenichi Yoshino, Kazuya Sawada, Taiga Isoda
  • Publication number: 20200302987
    Abstract: According to one embodiment, a magnetic device includes: a first magnetic material provided above a substrate; a second magnetic material provided between the substrate and the first magnetic material; a nonmagnetic material provided between the first magnetic material and the second magnetic material; a first layer provided between the substrate and the second magnetic material and including an amorphous layer; and a second layer provided between the amorphous layer and the second magnetic material and including a crystal layer.
    Type: Application
    Filed: September 10, 2019
    Publication date: September 24, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Kazuya SAWADA, Young Min EEH, Tadaaki OIKAWA, Kenichi YOSHINO, Eiji KITAGAWA, Taiga ISODA
  • Publication number: 20200294567
    Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer having an invariable magnetization direction; a non-magnetic layer provided on the first magnetic layer; a second magnetic layer provided on the non-magnetic layer, having an invariable magnetization direction, and containing a rare-earth element; a third magnetic layer provided on the second magnetic layer and composed of cobalt; and an oxide layer provided on the third magnetic layer.
    Type: Application
    Filed: September 11, 2019
    Publication date: September 17, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Tadaaki OIKAWA, Young Min EEH, Kazuya SAWADA, Kenichi YOSHINO, Eiji KITAGAWA, Taiga ISODA
  • Publication number: 20200091410
    Abstract: According to an embodiment, a storage device includes a resistance change element. The resistance change element includes a stacked structure including a first ferromagnet, a second ferromagnet, and a first nonmagnet between the first ferromagnet and the second ferromagnet. The first nonmagnet includes a boron-doped rare-earth oxide.
    Type: Application
    Filed: March 13, 2019
    Publication date: March 19, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Eiji KITAGAWA, Young Min EEH, Tadaaki OIKAWA, Kenichi YOSHINO, Kazuya SAWADA, Taiga ISODA
  • Publication number: 20200082857
    Abstract: According to one embodiment, a magnetic device includes a magnetic tunnel junction element, the magnetic tunnel junction element comprising: a first structure having ferromagnetism; a second structure having ferromagnetism; and a first nonmagnet provided between the first structure and the second structure; wherein: the first structure and the second structure are antiferromagnetically coupled via the first nonmagnet; and the first structure includes a first ferromagnetic nitride.
    Type: Application
    Filed: March 13, 2019
    Publication date: March 12, 2020
    Applicants: TOSHIBA MEMORY CORPORATION, SK HYNIX INC.
    Inventors: Young Min EEH, Taeyoung LEE, Kazuya SAWADA, Eiji KITAGAWA, Taiga ISODA, Tadaaki OIKAWA, Kenichi YOSHINO
  • Publication number: 20200075671
    Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, and including a first main surface and a second main surface located opposite to the first main surface, a second magnetic layer provided on a first main surface side of the first magnetic layer, and having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein a saturation magnetization of a part of the first magnetic layer which is located close to the first main surface is higher than a saturation magnetization of a part of the first magnetic layer which is located close to the second main surface.
    Type: Application
    Filed: November 8, 2019
    Publication date: March 5, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Jyunichi OZEKI, Masahiko NAKAYAMA, Hiroaki YODA, Eiji KITAGAWA, Takao OCHIAI, Minoru AMANO, Kenji NOMA
  • Patent number: 10580969
    Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a first magnetic layer; a second magnetic layer; and a spacer layer interposed between the first magnetic layer and the second magnetic layer, wherein the spacer layer includes a first layer, a second layer and an intermediate layer interposed between the first layer and the second layer, and wherein each of the first layer and the second layer includes an oxide, or a nitride, or a combination of an oxide and a nitride, the intermediate layer includes a multilayer structure including [Ru/x]n or [x/Ru]n, x includes a metal, an oxide, or a nitride, or a combination of a metal, an oxide and a nitride, and n represents an integer of 1 or greater.
    Type: Grant
    Filed: December 4, 2018
    Date of Patent: March 3, 2020
    Assignees: SK hynix Inc., Toshiba Memory Corporation
    Inventors: Tae-Young Lee, Jae-Hyoung Lee, Sung-Woong Chung, Eiji Kitagawa
  • Patent number: 10559894
    Abstract: To provide a method and a device for manufacturing a connection structure (1) and a wire harness (2). The connection structure connects an insulated wire (100) comprising a wire tip portion (103), an insulating covering (102) being stripped from the tip thereof, to a crimp terminal (200) comprising a closed-barrel-type crimping portion (230) allowing crimp connection with the wire tip portion (103) and has stable conductivity by crimping an aluminum core wire (101) by the crimping portion (230). The method comprises a carrier cutting step for separating crimp terminals (200) from a terminal connecting belt (300) comprising the crimp terminals (200) attached to a carrier (250) in a longitudinal direction, a wire insertion step for inserting wire tip portions (103) into the crimping portions (230) of the separated crimp terminals (200), and a crimping step for crimping the crimping portions (230) with the inserted wire tip portions (103).
    Type: Grant
    Filed: August 21, 2015
    Date of Patent: February 11, 2020
    Assignees: FURUKAWA ELECTRIC CO., LTD., FURUKAWA AUTOMOTIVE SYSTEMS, INC.
    Inventors: Yukihiro Kawamura, Satoshi Takamura, Takeshi Hyotani, Koichi Kitagawa, Eiji Aramaki
  • Publication number: 20200012956
    Abstract: An action selection learning device includes a memory; and a processor coupled to the memory and configured to generate a reference model that is a set of model parameter vectors that indicate an influence level of each factor that influences selection of an action alternative, calculate a selection probability for each action alternative, for each of the model parameter vectors, calculate a model parameter vector for each user using a subset of model parameter vectors extracted from the reference model, based on the selection probability for each action alternative and a selection history of the action alternative by each user, generate the action alternatives based on the model parameter vector for each user, and transmit the generated action alternatives to a terminal device.
    Type: Application
    Filed: September 19, 2019
    Publication date: January 9, 2020
    Applicant: FUJITSU LIMITED
    Inventors: Takuro Ikeda, Taizo ANAN, Eiji Kitagawa, Vishal Sharma
  • Patent number: 10424891
    Abstract: The terminal connection strip includes: a carrier formed in a strip shape; and a plurality of terminal fitting which project from at least one edge side of the carrier in a width direction. The terminal fitting includes a crimping section which connects by crimping at least a conductor tip of an insulated wire provided with the conductor tip where a conductor is covered with an insulating cover and the conductor is exposed by peeling off the insulating cover on a distal end side of the insulated wire to the terminal fitting. The crimping section is formed into a hollow shape which allows the insertion of at least the conductor tip from a proximal end side of the crimping section and allows the crimping section to surround the conductor tip.
    Type: Grant
    Filed: February 7, 2017
    Date of Patent: September 24, 2019
    Assignees: FURUKAWA ELECTRIC CO., LTD., FURUKAWA AUTOMOTIVE SYSTEMS, INC.
    Inventors: Takashi Tonoike, Yukihiro Kawamura, Saburo Yagi, Satoshi Takamura, Takeshi Hyotani, Koichi Kitagawa, Eiji Aramaki
  • Publication number: 20190173001
    Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a first magnetic layer; a second magnetic layer; and a spacer layer interposed between the first magnetic layer and the second magnetic layer, wherein the spacer layer includes a first layer, a second layer and an intermediate layer interposed between the first layer and the second layer, and wherein each of the first layer and the second layer includes an oxide, or a nitride, or a combination of an oxide and a nitride, the intermediate layer includes a multilayer structure including [Ru/x]n or [x/Ru]n, x includes a metal, an oxide, or a nitride, or a combination of a metal, an oxide and a nitride, and n represents an integer of 1 or greater.
    Type: Application
    Filed: December 4, 2018
    Publication date: June 6, 2019
    Inventors: Tae-Young LEE, Jae-Hyoung LEE, Sung-Woong CHUNG, Eiji KITAGAWA
  • Patent number: 10269866
    Abstract: A magnetoresistive element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a first nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, the first ferromagnetic layer including (MnxGay)100-zPtz, the (MnxGay)100-zPtz having a tetragonal crystal structure, where 45 atm %?x?75 atm %, 25 atm %?y?55 atm %, x+y=100 atm %, and 0 atm %<z?7 atm %.
    Type: Grant
    Filed: January 29, 2016
    Date of Patent: April 23, 2019
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOHOKU UNIVERSITY
    Inventors: Yushi Kato, Tadaomi Daibou, Eiji Kitagawa, Takao Ochiai, Junichi Ito, Takahide Kubota, Shigemi Mizukami, Terunobu Miyazaki
  • Publication number: 20190081235
    Abstract: According to one embodiment, a semiconductor memory device includes a variable resistance element comprising a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer. The non-magnetic layer includes a para-electric layer on an upper surface of the first ferromagnetic layer, and a ferro-electric layer on an upper surface of the para-electric layer and on a lower surface of the second ferromagnetic layer.
    Type: Application
    Filed: February 28, 2018
    Publication date: March 14, 2019
    Inventor: Eiji KITAGAWA
  • Patent number: 10211256
    Abstract: According to one embodiment, a magnetic memory device includes a stack structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein the second magnetic layer includes a first layer containing iron (Fe) and boron (B), a second layer containing iron (Fe) and boron (B), and a third layer provided between the first layer and the second layer and containing a semiconductor.
    Type: Grant
    Filed: March 14, 2016
    Date of Patent: February 19, 2019
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventor: Eiji Kitagawa
  • Publication number: 20190019404
    Abstract: A congestion management apparatus includes a memory configured to store, on a per-action-option basis, upper limits on numbers of users allowed to be guided to action options, and a processor coupled to the memory and configured to: generate the action options by time slot for a user; calculate for each of the generated action options, choice probabilities of the action options with respect to the user, and store the calculated choice probabilities in the memory; and calculate for each of the action options, estimated numbers of previous users assumed to have selected the action options, based on choice probabilities of each of the action options with respect to the previous users, the choice probabilities being obtained from the memory, wherein the processor is configured to extract, based on the upper limits and the estimated numbers for the action options, action options to be presented to the user.
    Type: Application
    Filed: September 19, 2018
    Publication date: January 17, 2019
    Applicant: FUJITSU LIMITED
    Inventors: Takuro IKEDA, Eiji KITAGAWA, Vishal SHARMA