Abstract: According to one embodiment, a magnetic memory device includes a substrate, a first layer stack, and a second layer stack at a same side of the first layer stack relative to the substrate, and farther than the first layer stack from the substrate. Each of the first and second layer stack includes a reference layer, a tunnel barrier layer provided in a direction relative to the reference layer, the direction being perpendicular to the substrate, a storage layer provided in the direction relative to the tunnel barrier layer, and a first nonmagnetic layer provided in the direction relative to the storage layer. A heat absorption rate of the first nonmagnetic layer of the first layer stack is lower than a heat absorption rate of the first nonmagnetic layer of the second layer stack.

Abstract: According to one embodiment, a magnetic device includes a layer stack. The layer stack includes a first ferromagnetic layer, a second ferromagnetic layer, a first nonmagnetic layer between the first ferromagnetic layer and the second ferromagnetic layer, and a second nonmagnetic layer. The first ferromagnetic layer is interposed between the second nonmagnetic layer and the first nonmagnetic layer. The first nonmagnetic layer and the second nonmagnetic layer contain a magnesium oxide (MgO). The first ferromagnetic layer contains a higher amount of boron (B) at an interface with the first nonmagnetic layer than at an interface with the second nonmagnetic layer.

Abstract: According to one embodiment, a magnetoresistive memory device includes: a first ferromagnetic layer; a stoichiometric first layer; a first insulator between the first ferromagnetic layer and the first layer; a second ferromagnetic layer between the first insulator and the first layer; and a non-stoichiometric second layer between the second ferromagnetic layer and the first layer. The second layer is in contact with the second ferromagnetic layer and the first layer.

Abstract: A congestion management apparatus includes a memory configured to store, on a per-action-option basis, upper limits on numbers of users allowed to be guided to action options, and a processor coupled to the memory and configured to: generate the action options by time slot for a user; calculate for each of the generated action options, choice probabilities of the action options with respect to the user, and store the calculated choice probabilities in the memory; and calculate for each of the action options, estimated numbers of previous users assumed to have selected the action options, based on choice probabilities of each of the action options with respect to the previous users, the choice probabilities being obtained from the memory, wherein the processor is configured to extract, based on the upper limits and the estimated numbers for the action options, action options to be presented to the user.

Abstract: A non-transitory computer-readable storage medium storing a program that causes a computer to execute a process, the process includes acquiring first sound data collected by a first microphone and second sound data collected by a second microphone during traveling of a vehicle in which the first microphone is provided in vicinity of a front wheel and the second microphone is provided in vicinity of a rear wheel; and detecting a cavity under a road surface where the vehicle has traveled based on a difference between the acquired first sound data and the acquired second sound data.

Abstract: According to an embodiment, a storage device includes a resistance change element. The resistance change element includes a stacked structure including a first ferromagnet, a second ferromagnet, and a first nonmagnet between the first ferromagnet and the second ferromagnet. The first nonmagnet includes a boron-doped rare-earth oxide.

Abstract: According to one embodiment, a magnetic device includes: a first magnetic material provided above a substrate; a second magnetic material provided between the substrate and the first magnetic material; a nonmagnetic material provided between the first magnetic material and the second magnetic material; a first layer provided between the substrate and the second magnetic material and including an amorphous layer; and a second layer provided between the amorphous layer and the second magnetic material and including a crystal layer.

Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer having an invariable magnetization direction; a non-magnetic layer provided on the first magnetic layer; a second magnetic layer provided on the non-magnetic layer, having an invariable magnetization direction, and containing a rare-earth element; a third magnetic layer provided on the second magnetic layer and composed of cobalt; and an oxide layer provided on the third magnetic layer.

Abstract: According to an embodiment, a storage device includes a resistance change element. The resistance change element includes a stacked structure including a first ferromagnet, a second ferromagnet, and a first nonmagnet between the first ferromagnet and the second ferromagnet. The first nonmagnet includes a boron-doped rare-earth oxide.

Abstract: According to one embodiment, a magnetic device includes a magnetic tunnel junction element, the magnetic tunnel junction element comprising: a first structure having ferromagnetism; a second structure having ferromagnetism; and a first nonmagnet provided between the first structure and the second structure; wherein: the first structure and the second structure are antiferromagnetically coupled via the first nonmagnet; and the first structure includes a first ferromagnetic nitride.

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, and including a first main surface and a second main surface located opposite to the first main surface, a second magnetic layer provided on a first main surface side of the first magnetic layer, and having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein a saturation magnetization of a part of the first magnetic layer which is located close to the first main surface is higher than a saturation magnetization of a part of the first magnetic layer which is located close to the second main surface.

Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a first magnetic layer; a second magnetic layer; and a spacer layer interposed between the first magnetic layer and the second magnetic layer, wherein the spacer layer includes a first layer, a second layer and an intermediate layer interposed between the first layer and the second layer, and wherein each of the first layer and the second layer includes an oxide, or a nitride, or a combination of an oxide and a nitride, the intermediate layer includes a multilayer structure including [Ru/x]n or [x/Ru]n, x includes a metal, an oxide, or a nitride, or a combination of a metal, an oxide and a nitride, and n represents an integer of 1 or greater.

Abstract: To provide a method and a device for manufacturing a connection structure (1) and a wire harness (2). The connection structure connects an insulated wire (100) comprising a wire tip portion (103), an insulating covering (102) being stripped from the tip thereof, to a crimp terminal (200) comprising a closed-barrel-type crimping portion (230) allowing crimp connection with the wire tip portion (103) and has stable conductivity by crimping an aluminum core wire (101) by the crimping portion (230). The method comprises a carrier cutting step for separating crimp terminals (200) from a terminal connecting belt (300) comprising the crimp terminals (200) attached to a carrier (250) in a longitudinal direction, a wire insertion step for inserting wire tip portions (103) into the crimping portions (230) of the separated crimp terminals (200), and a crimping step for crimping the crimping portions (230) with the inserted wire tip portions (103).

Abstract: An action selection learning device includes a memory; and a processor coupled to the memory and configured to generate a reference model that is a set of model parameter vectors that indicate an influence level of each factor that influences selection of an action alternative, calculate a selection probability for each action alternative, for each of the model parameter vectors, calculate a model parameter vector for each user using a subset of model parameter vectors extracted from the reference model, based on the selection probability for each action alternative and a selection history of the action alternative by each user, generate the action alternatives based on the model parameter vector for each user, and transmit the generated action alternatives to a terminal device.

Abstract: The terminal connection strip includes: a carrier formed in a strip shape; and a plurality of terminal fitting which project from at least one edge side of the carrier in a width direction. The terminal fitting includes a crimping section which connects by crimping at least a conductor tip of an insulated wire provided with the conductor tip where a conductor is covered with an insulating cover and the conductor is exposed by peeling off the insulating cover on a distal end side of the insulated wire to the terminal fitting. The crimping section is formed into a hollow shape which allows the insertion of at least the conductor tip from a proximal end side of the crimping section and allows the crimping section to surround the conductor tip.

Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a first magnetic layer; a second magnetic layer; and a spacer layer interposed between the first magnetic layer and the second magnetic layer, wherein the spacer layer includes a first layer, a second layer and an intermediate layer interposed between the first layer and the second layer, and wherein each of the first layer and the second layer includes an oxide, or a nitride, or a combination of an oxide and a nitride, the intermediate layer includes a multilayer structure including [Ru/x]n or [x/Ru]n, x includes a metal, an oxide, or a nitride, or a combination of a metal, an oxide and a nitride, and n represents an integer of 1 or greater.

Abstract: A magnetoresistive element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a first nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, the first ferromagnetic layer including (MnxGay)100-zPtz, the (MnxGay)100-zPtz having a tetragonal crystal structure, where 45 atm %?x?75 atm %, 25 atm %?y?55 atm %, x+y=100 atm %, and 0 atm %<z?7 atm %.

Abstract: According to one embodiment, a semiconductor memory device includes a variable resistance element comprising a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer. The non-magnetic layer includes a para-electric layer on an upper surface of the first ferromagnetic layer, and a ferro-electric layer on an upper surface of the para-electric layer and on a lower surface of the second ferromagnetic layer.

Abstract: According to one embodiment, a magnetic memory device includes a stack structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein the second magnetic layer includes a first layer containing iron (Fe) and boron (B), a second layer containing iron (Fe) and boron (B), and a third layer provided between the first layer and the second layer and containing a semiconductor.

Abstract: A congestion management apparatus includes a memory configured to store, on a per-action-option basis, upper limits on numbers of users allowed to be guided to action options, and a processor coupled to the memory and configured to: generate the action options by time slot for a user; calculate for each of the generated action options, choice probabilities of the action options with respect to the user, and store the calculated choice probabilities in the memory; and calculate for each of the action options, estimated numbers of previous users assumed to have selected the action options, based on choice probabilities of each of the action options with respect to the previous users, the choice probabilities being obtained from the memory, wherein the processor is configured to extract, based on the upper limits and the estimated numbers for the action options, action options to be presented to the user.