Patents by Inventor Eiji Kitagawa

Eiji Kitagawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160125662
    Abstract: When plural users, including users with different disembarkation points, are using, by ride-sharing, a vehicle of a passenger transportation service that determines a fare according to at least one of usage distance or usage time, a payment amount of a passenger disembarking at a disembarkation point at which a user disembarks is calculated, based on a number of disembarking passengers at the disembarkation point, a number of passengers before disembarkation at the disembarkation point, a balance of the fare to the disembarkation point minus a paid or collected payment amount, and a compensation rate for a subsequently disembarking user.
    Type: Application
    Filed: September 28, 2015
    Publication date: May 5, 2016
    Inventors: Takushi Fujita, Takuro Ikeda, Eiji Kitagawa, Taizo ANAN
  • Publication number: 20160118098
    Abstract: A magnetic memory according to an embodiment includes at least one MTJ element, the MTJ element including: a magnetic multilayer structure including a first magnetic layer in which a direction of magnetization is fixed, a second magnetic layer in which a direction of magnetization is changeable, and a tunnel barrier layer located between the first and second magnetic layers; a first electrode provided on a first surface of the magnetic multilayer structure; a second electrode provided on a second surface of the magnetic multilayer structure; an insulating film provided on a side surface of the magnetic multilayer structure; and a control electrode provided on the side surface of the magnetic multilayer structure with the insulating film located therebetween, a voltage being applied to the control electrode in a read operation, which increases an energy barrier for changing the magnetization of the second magnetic layer.
    Type: Application
    Filed: November 20, 2015
    Publication date: April 28, 2016
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Naoharu SHIMOMURA, Eiji KITAGAWA, Minoru AMANO, Daisuke SAIDA, Kay YAKUSHIJI, Takayuki NOZAKI, Shinji YUASA, Akio FUKUSHIMA, Hiroshi IMAMURA, Hitoshi KUBOTA
  • Patent number: 9312475
    Abstract: According to one embodiment, a magnetoresistive element includes first and second magnetic layers, a first nonmagnetic layer, a conductive layer. The first and second magnetic layers have axes of easy magnetization perpendicular to a film plane. The first and second magnetic layers have variable and invariable magnetization directions, respectively. The first nonmagnetic layer is between the first and second magnetic layers. The conductive layer is on a surface of the first magnetic layer opposite to a surface on which the first nonmagnetic layer is formed. The first magnetic layer has a structure obtained by alternately laminating magnetic and nonmagnetic materials. The nonmagnetic material includes at least one of Ta, W, Nb, Mo, Zr, Hf. The magnetic material includes Co and Fe. One of the magnetic materials contacts the first nonmagnetic layer. One of the nonmagnetic materials contacts the conductive layer.
    Type: Grant
    Filed: January 3, 2014
    Date of Patent: April 12, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Toshihiko Nagase, Daisuke Watanabe, Koji Ueda, Katsuya Nishiyama, Eiji Kitagawa, Kenji Noma, Tadashi Kai
  • Publication number: 20160048777
    Abstract: A reservation management apparatus obtains reservation information including reserved trip information indicating a vehicle trip that has not departed and is reserved by one of a plurality of users and reserving user information indicating the user. The reservation management apparatus determines one or more other users who are associated with the same trip information as the user, with reference to history information associating information about users who took vehicle trips that were operated with different departure dates and times in the past with trip information indicating the vehicle trips. The reservation management apparatus outputs other user information indicating at least some of the determined other users in association with the reservation information.
    Type: Application
    Filed: October 14, 2014
    Publication date: February 18, 2016
    Applicant: FUJITSU LIMITED
    Inventors: Eiji KITAGAWA, Takushi FUJITA, Takuro IKEDA
  • Publication number: 20160043305
    Abstract: According to one embodiment, a magnetoresistive effect element includes: a first magnetic layer; a second magnetic layer; a non-magnetic film between the first magnetic layer and the second magnetic layer; a first layer on an opposite side of a side of the non-magnetic layer of the first magnetic layer, the first layer including magnesium oxide as a principal component; and a second layer between the first film and the first magnetic layer, the second layer including a material different from a material of the first layer.
    Type: Application
    Filed: March 5, 2015
    Publication date: February 11, 2016
    Inventors: Takao Ochiai, Eiji Kitagawa, Kenji Noma
  • Publication number: 20160013398
    Abstract: According to one embodiment, a magnetoresistive element includes a recording layer having a variable magnetization direction, a reference layer having an invariable magnetization direction, an intermediate layer provided between the recording layer and the reference layer, and a first buffer layer provided on a surface of the recording layer, which is opposite to a surface of the recording layer where the intermediate layer is provided. The recording layer comprises a first magnetic layer which is provided in a side of the intermediate layer and contains CoFe as a main component, and a second magnetic layer which is provided in a side of the first buffer layer and contains CoFe as a main component, a concentration of Fe in the first magnetic layer being higher than a concentration of Fe in the second magnetic layer. The first buffer layer comprises a nitrogen compound.
    Type: Application
    Filed: September 18, 2015
    Publication date: January 14, 2016
    Inventors: Eiji Kitagawa, Tadaomi Daibou, Tadashi Kai, Toshihiko Nagase, Kenji Noma, Hiroaki Yoda
  • Publication number: 20160013400
    Abstract: According to one embodiment, a magnetoresistive element includes a recording layer having magnetic anisotropy perpendicular to a film surface and having a variable magnetization direction, a reference layer having magnetic anisotropy perpendicular to a film surface and having an invariable magnetization direction, an intermediate layer provided between the recording layer and the reference layer, and a underlayer containing AlTiN and provided on an opposite side of a surface of the recording layer on which the intermediate layer is provided.
    Type: Application
    Filed: September 21, 2015
    Publication date: January 14, 2016
    Inventors: Eiji Kitagawa, Tadashi Kai, Hiroaki Yoda
  • Publication number: 20160013397
    Abstract: A magnetoresistive effect element includes a recording layer having magnetic anisotropy and a variable magnetization direction, a reference layer having magnetic anisotropy and an invariable magnetization direction, an intermediate layer between the recording layer and the reference layer, an underlayer containing scandium (Sc) and disposed on a surface side of the recording layer opposite to a surface side on which the recording layer is disposed, and a side wall layer containing an oxide of Sc and disposed on side surfaces of the recording layer and the intermediate layer.
    Type: Application
    Filed: March 3, 2015
    Publication date: January 14, 2016
    Inventors: Eiji KITAGAWA, Minoru AMANO, Megumi YAKABE, Hiroaki MAEKAWA
  • Patent number: 9230628
    Abstract: A magnetic memory according to an embodiment includes at least one MTJ element, the MTJ element including: a magnetic multilayer structure including a first magnetic layer in which a direction of magnetization is fixed, a second magnetic layer in which a direction of magnetization is changeable, and a tunnel barrier layer located between the first and second magnetic layers; a first electrode provided on a first surface of the magnetic multilayer structure; a second electrode provided on a second surface of the magnetic multilayer structure; an insulating film provided on a side surface of the magnetic multilayer structure; and a control electrode provided on the side surface of the magnetic multilayer structure with the insulating film located therebetween, a voltage being applied to the control electrode in a read operation, which increases an energy barrier for changing the magnetization of the second magnetic layer.
    Type: Grant
    Filed: March 6, 2014
    Date of Patent: January 5, 2016
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Naoharu Shimomura, Eiji Kitagawa, Minoru Amano, Daisuke Saida, Kay Yakushiji, Takayuki Nozaki, Shinji Yuasa, Akio Fukushima, Hiroshi Imamura, Hitoshi Kubota
  • Patent number: 9178133
    Abstract: According to one embodiment, a magnetoresistive element includes a recording layer having magnetic anisotropy perpendicular to a film surface and having a variable magnetization direction, a reference layer having magnetic anisotropy perpendicular to a film surface and having an invariable magnetization direction, an intermediate layer provided between the recording layer and the reference layer, and a underlayer containing AlTiN and provided on an opposite side of a surface of the recording layer on which the intermediate layer is provided.
    Type: Grant
    Filed: January 21, 2014
    Date of Patent: November 3, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Eiji Kitagawa, Tadashi Kai, Hiroaki Yoda
  • Patent number: 9165585
    Abstract: According to one embodiment, a magnetoresistive element includes a recording layer having a variable magnetization direction, a reference layer having an invariable magnetization direction, an intermediate layer provided between the recording layer and the reference layer, and a first buffer layer provided on a surface of the recording layer, which is opposite to a surface of the recording layer where the intermediate layer is provided. The recording layer comprises a first magnetic layer which is provided in a side of the intermediate layer and contains CoFe as a main component, and a second magnetic layer which is provided in a side of the first buffer layer and contains CoFe as a main component, a concentration of Fe in the first magnetic layer being higher than a concentration of Fe in the second magnetic layer. The first buffer layer comprises a nitrogen compound.
    Type: Grant
    Filed: September 16, 2011
    Date of Patent: October 20, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Eiji Kitagawa, Tadaomi Daibou, Tadashi Kai, Toshihiko Nagase, Kenji Noma, Hiroaki Yoda
  • Patent number: 9166065
    Abstract: According to one embodiment, a magnetoresistive effect element includes a first magnetic film having magnetic anisotropy and an invariable magnetization direction in a direction perpendicular to a film plane, a second magnetic film having magnetic anisotropy and a variable magnetization direction in the direction perpendicular to the film plane, and a nonmagnetic film between the first magnetic film and the second magnetic film. At least one of the first and second magnetic films includes a first magnetic layer. The first magnetic layer includes a rare earth metal, a transition metal, and boron.
    Type: Grant
    Filed: March 13, 2012
    Date of Patent: October 20, 2015
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Yuichi Ohsawa, Tadaomi Daibou, Yushi Kato, Eiji Kitagawa, Saori Kashiwada, Minoru Amano, Junichi Ito
  • Publication number: 20150278712
    Abstract: A method included accepting information on a desired ride place in ride sharing and information on a desired drop-off place in the ride sharing; identifying an amount of change in at least one of travel time and travel distance in case that a past travel path of a candidate vehicle for the ride sharing is changed to a travel path that passes through the desired ride place and the desired drop-off place; and sending a request for the ride sharing to a terminal corresponding to the candidate vehicle in accordance with the identified amount of change.
    Type: Application
    Filed: October 10, 2014
    Publication date: October 1, 2015
    Inventors: Takushi Fujita, Eiji Kitagawa, Takuro Ikeda
  • Patent number: 9147456
    Abstract: A magnetic memory according to an embodiment includes: a magnetoresistive element including a first magnetic layer having a magnetization direction not to be changed by spin-injection writing, a second magnetic layer having a magnetization direction to be changeable by the spin-injection writing, and a tunnel barrier layer provided between the first and second magnetic layers; a first interconnect electrically connected to one of the first and second magnetic layers; a select transistor, with one of a source and drain thereof being electrically connected to the other one of the first and second magnetic layers; a second interconnect electrically connected to the other one of the source and drain; a diode having one terminal electrically connected to the other one of the first and second magnetic layers; a third interconnect electrically connected to the other terminal of the diode; and a sense amplifier electrically connected to the third interconnect.
    Type: Grant
    Filed: June 29, 2012
    Date of Patent: September 29, 2015
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventor: Eiji Kitagawa
  • Publication number: 20150263270
    Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer including O and one of Co, Fe, Ni and Mn, a second magnetic layer, a nonmagnetic layer between the first and second magnetic layers, a first electrode connected to the first magnetic layer, a second electrode connected to the second magnetic layer, and a resistive layer including N between the first magnetic layer and the first electrode.
    Type: Application
    Filed: July 16, 2014
    Publication date: September 17, 2015
    Inventors: Eiji KITAGAWA, Minoru AMANO
  • Patent number: 9117924
    Abstract: According to one embodiment, a magnetic memory element includes a first magnetic layer having a first surface and a second surface being opposite to the first surface, a second magnetic layer, an intermediate layer which is provided between the first surface of the first magnetic layer and the second magnetic layer, a layer which is provided on the second surface of the first magnetic layer, the layer containing B and at least one element selected from Hf, Al, and Mg, and an insulating layer which is provided on a sidewall of the intermediate layer, the insulating layer containing at least one element selected from the Hf, Al, and Mg contained in the layer.
    Type: Grant
    Filed: December 28, 2012
    Date of Patent: August 25, 2015
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Eiji Kitagawa, Chikayoshi Kamata, Saori Kashiwada, Yushi Kato, Tadaomi Daibou
  • Patent number: 9117995
    Abstract: A magnetoresistance element includes a first magnetic layer having first and second surfaces, a second magnetic layer, an intermediate layer provided between the first surface and the second magnetic layer, a first layer provided on the second surface, containing B and at least one element selected from Hf, Al, Mg, and Ti and having third and fourth surfaces, a second layer provided on the fourth surface and containing B and at least one element selected from Hf, Al, and Mg, and an insulating layer provided on a sidewall of the intermediate layer and containing at least one element selected from the Hf, Al, and Mg contained in the second layer.
    Type: Grant
    Filed: September 11, 2013
    Date of Patent: August 25, 2015
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Tadaomi Daibou, Eiji Kitagawa, Chikayoshi Kamata, Saori Kashiwada, Yushi Kato, Megumi Yakabe
  • Patent number: 8994131
    Abstract: According to one embodiment, a magnetic memory includes a first magnetoresistive element includes a storage layer with a perpendicular and variable magnetization, a tunnel barrier layer, and a reference layer with a perpendicular and invariable magnetization, and stacked in order thereof in a first direction, and a first shift corrective layer with a perpendicular and invariable magnetization, the first shift corrective layer and the storage layer arranged in a direction intersecting with the first direction. Magnetization directions of the reference layer and the first shift corrective layer are the same.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: March 31, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Naoharu Shimomura, Eiji Kitagawa, Chikayoshi Kamata, Minoru Amano, Yuichi Ohsawa, Daisuke Saida, Megumi Yakabe, Hiroaki Maekawa
  • Publication number: 20150084142
    Abstract: According to one embodiment, a magnetoresistive element includes first and second magnetic layers and a first nonmagnetic layer. The first magnetic layer has an axis of easy magnetization perpendicular to a film plane, and a variable magnetization. The second magnetic layer has an axis of easy magnetization perpendicular to a film plane, and an invariable magnetization. The first nonmagnetic layer is provided between the first and second magnetic layers. The second magnetic layer includes third and fourth magnetic layers, and a second nonmagnetic layer formed between the third and fourth magnetic layers. The third magnetic layer is in contact with the first nonmagnetic layer and includes Co and at least one of Zr, Nb, Mo, Hf, Ta, and W.
    Type: Application
    Filed: December 12, 2014
    Publication date: March 26, 2015
    Inventors: Toshihiko Nagase, Eiji Kitagawa, Katsuya Nishiyama, Tadashi Kai, Koji Ueda, Daisuke Watanabe
  • Patent number: 8953369
    Abstract: According to one embodiment, a magnetoresistive element includes first and second magnetic layers and a first nonmagnetic layer. The first magnetic layer has an axis of easy magnetization perpendicular to a film plane, and a variable magnetization. The second magnetic layer has an axis of easy magnetization perpendicular to a film plane, and an invariable magnetization. The first nonmagnetic layer is provided between the first and second magnetic layers. The second magnetic layer includes third and fourth magnetic layers, and a second nonmagnetic layer formed between the third and fourth magnetic layers. The third magnetic layer is in contact with the first nonmagnetic layer and includes Co and at least one of Zr, Nb, Mo, Hf, Ta, and W.
    Type: Grant
    Filed: January 20, 2014
    Date of Patent: February 10, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Toshihiko Nagase, Eiji Kitagawa, Katsuya Nishiyama, Tadashi Kai, Koji Ueda, Daisuke Watanabe