Patents by Inventor Eiji Sugiyama
Eiji Sugiyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140167762Abstract: A coil device (1) in which a first coil (2), a second coil (4) and a third coil (3), each having a flat plate shape, are stacked with one other, wherein the first coil has a clearance section, the third coil has a second clearance section, part or whole of a lead wire (44) drawn out from the inside to the peripheral portion of the second coil while striding over the second coil (4) as well as part or whole of a lead wires (37a, 37b) drawn out from the inside to the peripheral portion of the third coil (3) while striding over the third coil are accommodated in the clearance section, and part or whole of lead wires (27a, 26b) drawn out from the inside to the peripheral portion of the first coil (2) while striding over the first coil are accommodated in the second clearance section.Type: ApplicationFiled: July 31, 2012Publication date: June 19, 2014Applicant: HITACHI METALS, LTD.Inventor: Eiji Sugiyama
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Patent number: 8746390Abstract: A body frame of a straddle-type vehicle is provided with a first cross tube 21 for interconnecting left and right main frames 13 in a right-left direction, and a second cross tube 22 disposed rearwards of the first cross tube 21 and for interconnecting the of left and right main frames 13. A shock absorber mounting portion 23 is mounted so as to interconnect the first cross tube 21 and the second cross tube 22. An extension/contraction axis L1 of a shock absorber 41 and a line L2 passing through an axis of the first cross tube 21 and an axis of the second cross tubes 22 are offset in a side view of a vehicle in a right-left direction.Type: GrantFiled: December 12, 2011Date of Patent: June 10, 2014Assignee: Honda Motor Co., Ltd.Inventors: Eiji Sugiyama, Takashi Sasaki
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Patent number: 8648439Abstract: The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer.Type: GrantFiled: April 18, 2013Date of Patent: February 11, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yoshitaka Dozen, Tomoyuki Aoki, Hidekazu Takahashi, Daiki Yamada, Eiji Sugiyama, Kaori Ogita, Naoto Kusumoto
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Publication number: 20130334611Abstract: The semiconductor device of the invention includes a transistor, an insulating layer provided over the transistor, a first conductive layer (corresponding to a source wire or a drain wire) electrically connected to a source region or a drain region of the transistor through an opening portion provided in the insulating layer, a first resin layer provided over the insulating layer and the first conductive layer, a layer containing conductive particles which is electrically connected to the first conductive layer through an opening portion provided in the first resin layer, and a substrate provided with a second resin layer and a second conductive layer serving as an antenna. In the semiconductor device having the above-described structure, the second conductive layer is electrically connected to the first conductive layer with the layer containing conductive particles interposed therebetween. In addition, the second resin layer is provided over the first resin layer.Type: ApplicationFiled: August 7, 2013Publication date: December 19, 2013Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hidekazu TAKAHASHI, Daiki YAMADA, Kyosuke ITO, Eiji SUGIYAMA, Yoshitaka DOZEN
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Publication number: 20130323912Abstract: A release layer formed over a substrate; at least one of thin film integrated circuits is formed over the release layer; a film is formed over each of the at least one of thin film integrated circuits; and the release layer is removed by using an etchant; thus, the at least one of thin film integrated circuits is peeled from the substrate. A semiconductor device is formed by sealing the peeled thin film integrated circuit by lamination or the like.Type: ApplicationFiled: July 25, 2013Publication date: December 5, 2013Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Tomoko TAMURA, Eiji SUGIYAMA, Yoshitaka DOZEN, Koji DAIRIKI, Takuya TSURUME
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Patent number: 8558370Abstract: The present invention provides a semiconductor device which is not easily damaged by external local pressure. The present invention further provides a manufacturing method of a highly-reliable semiconductor device, which is not destroyed by external local pressure, with a high yield. A structure body, in which high-strength fiber of an organic compound or an inorganic compound is impregnated with an organic resin, is provided over an element substrate having a semiconductor element formed using a single crystal semiconductor region, and heating and pressure bonding are performed, whereby a semiconductor device is manufactured, to which the element substrate and the structure body in which the high-strength fiber of an organic compound or an inorganic compound is impregnated with the organic resin are fixed together.Type: GrantFiled: September 29, 2010Date of Patent: October 15, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Eiji Sugiyama, Yoshitaka Dozen, Hisashi Ohtani, Takuya Tsurume
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Publication number: 20130264795Abstract: A body frame of a straddle-type vehicle is provided with a first cross tube 21 for interconnecting left and right main frames 13 in a right-left direction, and a second cross tube 22 disposed rearwards of the first cross tube 21 and for interconnecting the of left and right main frames 13. A shock absorber mounting portion 23 is mounted so as to interconnect the first cross tube 21 and the second cross tube 22. An extension/contraction axis L1 of a shock absorber 41 and a line L2 passing through an axis of the first cross tube 21 and an axis of the second cross tubes 22 are offset in a side view of a vehicle in a right-left direction.Type: ApplicationFiled: December 12, 2011Publication date: October 10, 2013Applicant: HONDA MOTOR CO., LTDInventors: Eiji Sugiyama, Takashi Sasaki
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Patent number: 8552418Abstract: The present invention provides a semiconductor device which is not easily damaged by external local pressure. The present invention further provides a method for manufacturing a highly-reliable semiconductor device, which is not destructed by external local pressure, with a high yield. A structure body, in which high-strength fiber of an organic compound or an inorganic compound is impregnated with an organic resin, is provided over an element layer having a semiconductor element formed using a non-single crystal semiconductor layer, and heating and pressure bonding are performed, whereby a semiconductor device is manufactured, to which the element layer and the structure body in which the high-strength fiber of an organic compound or an inorganic compound is impregnated with the organic resin are firmly fixed together.Type: GrantFiled: June 10, 2011Date of Patent: October 8, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Eiji Sugiyama, Yoshitaka Dozen, Hisashi Ohtani, Takuya Tsurume
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Patent number: 8530335Abstract: A release layer formed over a substrate; at least one of thin film integrated circuits is formed over the release layer; a film is formed over each of the at least one of thin film integrated circuits; and the release layer is removed by using an etchant; thus, the at least one of thin film integrated circuits is peeled from the substrate. A semiconductor device is formed by sealing the peeled thin film integrated circuit by lamination or the like.Type: GrantFiled: March 25, 2011Date of Patent: September 10, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Tomoko Tamura, Eiji Sugiyama, Yoshitaka Dozen, Koji Dairiki, Takuya Tsurume
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Publication number: 20130228885Abstract: The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer.Type: ApplicationFiled: April 18, 2013Publication date: September 5, 2013Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yoshitaka DOZEN, Tomoyuki AOKI, Hidekazu TAKAHASHI, Daiki YAMADA, Eiji SUGIYAMA, Kaori OGITA, Naoto KUSUMOTO
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Patent number: 8508027Abstract: The semiconductor device of the invention includes a transistor, an insulating layer provided over the transistor, a first conductive layer (corresponding to a source wire or a drain wire) electrically connected to a source region or a drain region of the transistor through an opening portion provided in the insulating layer, a first resin layer provided over the insulating layer and the first conductive layer, a layer containing conductive particles which is electrically connected to the first conductive layer through an opening portion provided in the first resin layer, and a substrate provided with a second resin layer and a second conductive layer serving as an antenna. In the semiconductor device having the above-described structure, the second conductive layer is electrically connected to the first conductive layer with the layer containing conductive particles interposed therebetween. In addition, the second resin layer is provided over the first resin layer.Type: GrantFiled: September 9, 2009Date of Patent: August 13, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hidekazu Takahashi, Daiki Yamada, Kyosuke Ito, Eiji Sugiyama, Yoshitaka Dozen
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Patent number: 8432018Abstract: The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer.Type: GrantFiled: October 12, 2011Date of Patent: April 30, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yoshitaka Dozen, Tomoyuki Aoki, Hidekazu Takahashi, Daiki Yamada, Eiji Sugiyama, Kaori Ogita, Naoto Kusumoto
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Patent number: 8362485Abstract: An object of the present invention is to provide a structure of a thin film circuit portion and a method for manufacturing a thin film circuit portion by which an electrode for connecting to an external portion can be easily formed under a thin film circuit. A stacked body including a first insulating film, a thin film circuit formed over one surface of the first insulating film, a second insulating film formed over the thin film circuit, an electrode formed over the second insulating film, and a resin film formed over the electrode, is formed. A conductive film is formed adjacent to the other surface of the first insulating film of the stacked body to be overlapped with the electrode. The conductive film is irradiated with a laser.Type: GrantFiled: December 1, 2011Date of Patent: January 29, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Daiki Yamada, Yoshitaka Dozen, Eiji Sugiyama, Hidekazu Takahashi
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Patent number: 8338931Abstract: In the present application, is disclosed a method of manufacturing a flexible semiconductor device having an excellent reliability and tolerance to the loading of external pressure. The method includes the steps of: forming a separation layer over a substrate having an insulating surface; forming an element layer including a semiconductor element comprising a non-single crystal semiconductor layer, over the separation layer; forming an organic resin layer over the element layer; providing a fibrous body formed of an organic compound or an inorganic compound on the organic resin layer; heating the organic resin layer; and separating the element layer from the separation layer. This method allows the formation of a flexible semiconductor device having a sealing layer in which the fibrous body is impregnated with the organic resin.Type: GrantFiled: April 27, 2010Date of Patent: December 25, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yoshitaka Dozen, Eiji Sugiyama, Hisashi Ohtani, Takuya Tsurume
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Publication number: 20120322212Abstract: It is an object of the present invention to reduce the cost of a wireless chip, further, to reduce the cost of a wireless chip by enabling the mass production of a wireless chip, and furthermore, to provide a downsized and lightweight wireless chip. A wireless chip in which a thin film integrated circuit peeled from a glass substrate or a quartz substrate is formed between a first base material and a second base material is provided according to the invention. As compared with a wireless chip formed from a silicon substrate, the wireless chip according to the invention realizes downsizing, thinness, and lightweight. The thin film integrated circuit included in the wireless chip according to the invention at least has an n-type thin film transistor having an LDD (Lightly Doped Drain) structure, a p-type thin film transistor having a single drain structure, and a conductive layer functioning as an antenna.Type: ApplicationFiled: August 28, 2012Publication date: December 20, 2012Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Koji DAIRIKI, Junya MARUYAMA, Tomoko TAMURA, Eiji SUGIYAMA, Yoshitaka DOZEN
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Patent number: 8288773Abstract: It is an object of the present invention to reduce the cost of a wireless chip, further, to reduce the cost of a wireless chip by enabling the mass production of a wireless chip, and furthermore, to provide a downsized and lightweight wireless chip. A wireless chip in which a thin film integrated circuit peeled from a glass substrate or a quartz substrate is formed between a first base material and a second base material is provided according to the invention. As compared with a wireless chip formed from a silicon substrate, the wireless chip according to the invention realizes downsizing, thinness, and lightweight. The thin film integrated circuit included in the wireless chip according to the invention at least has an n-type thin film transistor having an LDD (Lightly Doped Drain) structure, a p-type thin film transistor having a single drain structure, and a conductive layer functioning as an antenna.Type: GrantFiled: August 10, 2005Date of Patent: October 16, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Koji Dairiki, Junya Maruyama, Tomoko Tamura, Eiji Sugiyama, Yoshitaka Dozen
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Patent number: 8242585Abstract: The present invention provides a semiconductor device formed over an insulating substrate, typically a semiconductor device having a structure in which mounting strength to a wiring board can be increased in an optical sensor, a solar battery, or a circuit using a TFT, and which can make it mount on a wiring board with high density, and further a method for manufacturing the same. According to the present invention, in a semiconductor device, a semiconductor element is formed on an insulating substrate, a concave portion is formed on a side face of the semiconductor device, and a conductive film electrically connected to the semiconductor element is formed in the concave portion.Type: GrantFiled: December 10, 2010Date of Patent: August 14, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kazuo Nishi, Hiroki Adachi, Junya Maruyama, Naoto Kusumoto, Yuusuke Sugawara, Tomoyuki Aoki, Eiji Sugiyama, Hironobu Takahashi
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Publication number: 20120156454Abstract: Provided is a fiber which is equal to conventional fibers in heat resistance and which, even when heated during thermoforming, maintains the shape thereof and suffers no change in texture. This fiber is suitable for forming an interior automotive member. Also provided is an interior automotive member formed from the fiber. The film-protected fiber comprises: a core fiber constituted of a material having a relatively low melting point; and a protective film which is constituted of a material having a relatively high melting point and with which the periphery of the core fiber is surrounded. Even when the film-protected fiber is thermoformed, at a temperature sufficient for melting the core fiber, into a shape conforming to, e.g., an inner part of an automotive body, the original structure of the fiber can be maintained due to the protective film.Type: ApplicationFiled: August 30, 2009Publication date: June 21, 2012Applicant: TOYOTA TSUSHO CORPORATIONInventors: Eiji Sugiyama, Tamio Endo
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Publication number: 20120080810Abstract: The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer.Type: ApplicationFiled: October 12, 2011Publication date: April 5, 2012Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Yoshitaka DOZEN, Tomoyuki AOKI, Hidekazu TAKAHASHI, Daiki YAMADA, Eiji SUGIYAMA, Kaori OGITA, Naoto KUSUMOTO
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Publication number: 20120075454Abstract: An electronic magnifier includes a stage on which an object to be read is placed, an imaging unit which is disposed above the stage to image the object, a liquid crystal display (LCD) monitor which is mounted via a pivoting member to the imaging unit so as to be pivotable, wherein the LCD monitor is configured to be accommodated in a space defined between the imaging unit and the stage.Type: ApplicationFiled: August 9, 2011Publication date: March 29, 2012Applicant: Elmo Co., Ltd.Inventor: Eiji SUGIYAMA