Abstract: It is an object of the invention to provide a PWM inverter control method capable of causing a reduction in a noise and energy saving to be consistent with each other by the reduction in a noise and the limit of the number of switching operations.

Abstract: It is an object of the invention to provide a multilevel PWM inverter control apparatus capable of safely carrying out switching from a normal operation to a protecting operation and performing a reset from the protecting operation to the normal run safely and smoothly without requiring a complicated control algorithm. In the invention, if a current value I which is measured is set to have a level which is equal to or higher than the level of a first reference value I1 and is lower than the level of a second reference value I2, a zero vector to be started from an OOO state in which an intermediate potential is output for all of phases is output (Step 22). If the current value I is set to have a level which is equal to or higher than the level of the second reference value I2 and is lower than the level of a third reference value I3, a base block operation for bringing all of switching units into an OFF state is carried out after outputting the zero vector (Step 28).

Abstract: It is an object of the invention to provide a PWM inverter control method capable of causing a reduction in a noise and energy saving to be consistent with each other by the reduction in a noise and the limit of the number of switching operations.

Abstract: There is provided a packet processing device for, when decoding variable length data that is split into packets, realizing a reduction in processing load at a decoder, by providing information for identifying a start position of the data. A header analyzing section (11) determines whether data stored in a packet is start data containing start information or other data. A data extracting section (12) extracts data from a packet and stores the data in a buffer (13). A buffer controlling section (14) causes a start position memory (15) and a number-of-starts counter (16) to retain an address position and the number of start data stored in the buffer (13). A decode section (20) refers to the start position memory (15) and the number-of-starts counter (16) and executes a decode process for the data stored in the buffer (13).

Abstract: It is an object of the invention to provide a multilevel PWM inverter control apparatus capable of safely carrying out switching from a normal operation to a protecting operation and performing a reset from the protecting operation to the normal run safely and smoothly without requiring a complicated control algorithm. In the invention, if a current value I which is measured is set to have a level which is equal to or higher than the level of a first reference value I1 and is lower than the level of a second reference value I2, a zero vector to be started from an OOO state in which an intermediate potential is output for all of phases is output (Step 22). If the current value I is set to have a level which is equal to or higher than the level of the second reference value I2 and is lower than the level of a third reference value I3, a base block operation for bringing all of switching units into an OFF state is carried out after outputting the zero vector (Step 28).

Abstract: An inlet port 16 communicating with the interior of a fuel delivery pipe body 10 to introduce fuel is made open in a center of a tubular joint 11 having a smaller diameter than an inside diameter of a holder portion 15 of an injector 32 connected to a respective pipe end portion 25, and a length from a center of this inlet port 16 to the pipe end portion 25 is set to 30 to 1000 mm, to thereby form the tubular joint 11. The tubular joint 11 and the fuel delivery pipe body 10 are fixed such that the inlet port 16 of this tubular joint 11 is communicatable with the interior of the fuel delivery pipe body 10.

Abstract: A fuel delivery pipe capable of reducing a pressure pulsation at the time of a fuel injection due to injection nozzles, preventing vibrations and noises at an underfloor pipe arrangement, and turning down a radiate sound from the fuel delivery pipe, wherein a flexible absorbing wall surface 10 formed on a wall surface of a fuel delivery body 1 is loosened due to internal pressure changes to render internal volume of the fuel delivery body 1 increasable, ?L/{square root}{square root over ( )}V determined by sonic speed ?L of fuel flowing through the fuel delivery body 1 and the internal volume V of the fuel delivery body 1 is set as 20×103(m?0.5·sec?1)??L/{square root}{square root over ( )}V?85×103(m?0.5·sec?1) while a ratio ?L/?H of equivalent sonic speed ?H in a high frequency area to the sonic speed ?L of the fuel is set as ?L/?H?0.

Abstract: An object of the present invention is to provide a null mutant non-human animal showing salt intake behavior similar to that of wild-type animals under water-sufficient conditions and showing much more intakes of hypertonic saline compared with wild-type animals under water- and salt-depleted conditions, for example, an Nav2 gene-deficient non-human animal, which is useful as a model animal of excessive salt intake experiments. The object will be attained by following process: mouse genomic libraries are screened with rat NaG cDNA as a probe, then Nav2 gene of genomic DNA is isolated, and a targeting vector is constructed by inserting marker gene such as neo gene into the exon of Nav2. After thus constructed targeting vector is induced to ES cells, homologously recombined ES cells are selected, then germ line chimeric mice are constructed with this ES cells strain, and they are hybridized with the wild-type mice and heterozygous mutant mice are obtained.

Abstract: A semiconductor device includes a substrate, a pad electrode formed on the substrate and a bump electrode formed on the pad electrode, wherein the pad electrode has an irregular flaw, and there is provided a pattern covering the irregular flaw between the pad electrode an the bump electrode.

Abstract: A key generator (51, 61) generates, from an IP-key (11) for entering a closed IP network (1), a set (52, 62) of session keys (53, 63) indexed for identification, an index pointer (71, 72) points an index (i, j) to identify a session key (53, 63), the set (52, 62) of session keys has a divergence barrier incorporated therein for barring a computational approach to any session key (53, 63), and an unbar data set (i, j, 62) unbars the divergence barrier.

Abstract: A semiconductor device substrate has fine terminals with a small pitch and is able to be easily produced at a low cost without using a special process. A mounting terminal has a pyramidal shape and extending between a front surface and a back surface of a silicon substrate. An end of the mounting terminal protrudes from the back surface of the silicon substrate. A wiring layer is formed on the front surface of the silicon substrate. The wiring layer includes a conductive layer that is electrically connected to the mounting terminal.

Abstract: A solid-state imaging device, comprises: a semiconductor substrate having a first surface; a solid-state imaging element in the first surface of the semiconductor substrate, the solid-state imaging element comprising a light-receiving region; a light-transmission member having a second surface and a third surface, the second surface being opposite to the third surface, wherein the light-transmission member and the first surface of the semiconductor substrate define a gap between the second surface of the light-transmission member and an outer surface of the light-receiving region; and an external connection terminal connected to the solid-state imaging element, wherein a distance between the outer surface of the light-receiving region and the third surface of the light-transmission member is 0.5 mm or more.

Abstract: A solid-state imaging device, comprises: a semiconductor substrate having a first surface; a solid-state imaging element in the first surface of semiconductor substrate, the solid-state imaging element comprising a light-receiving region; a light-transmission member having a second surface and a third surface, the second surface being opposite to the third surface, wherein the light-transmission member and the first surface of the semiconductor substrate define a gap between the second surface of the light-transmission member and an outer surface of the light-receiving region; and an external connection terminal connected to the solid-state imaging element, wherein the light-transmission member comprises low ?-ray glass.

Abstract: A method of manufacturing a semiconductor device includes the steps of forming barrier metals on first electrodes provided on a chip of the semiconductor device, implementing a predetermined test on the semiconductor device by applying a signal to the semiconductor device via at least one of the barrier metals, and forming second protruded electrodes on the barrier metals. The predetermined tests are implemented before forming second protruded electrodes on the barrier metals.

Abstract: A method of manufacturing a semiconductor device using a wiring substrate is provided which can facilitate the handling of the wiring substrate. The method includes the steps of forming a peelable resin layer on a silicon substrate, forming the wiring substrate on the peelable resin layer, mounting semiconductor chips on the wiring substrate, forming semiconductor devices by sealing the plurality of semiconductor chips by a sealing resin, individualizing the semiconductor devices by dicing the semiconductor devices from the sealing resin side but leaving the silicon substrate, peeling each of the individualized semiconductor devices from the silicon substrate between the silicon substrate and the peelable resin layer, and exposing terminals on the wiring substrate by forming openings through the peelable resin layer or by removing the peelable resin layer.

Abstract: A semiconductor device substrate has fine terminals with a small pitch and is able to be easily produced at a low cost without using a special process. A mounting terminal has a pyramidal shape and extending between a front surface and a back surface of a silicon substrate. An end of the mounting terminal protrudes from the back surface of the silicon substrate. A wiring layer is formed on the front surface of the silicon substrate. The wiring layer includes a conductive layer that is electrically connected to the mounting terminal.

Abstract: On the basis of: a first calculated value ic which is a product of a calculated value of a time of three-phase output voltages in a state where a positive bus, a negative bus, and a neutral line are connected respectively to three-phase phase output terminals, and a predicted neutral current value in the state; and second and third calculated values icx and icy which are products of a calculated value of a time of the three-phase output voltages that can take state 1 where two of the three-phase phase output terminals are connected to the positive bus or the neutral line, and a remaining one terminal is connected to the neutral line or the negative bus, and state 2 opposite to the state, and predicted neutral current values in states 1 and 2, a time ratio of state 1 and 2 during a PWM period is determined so as to make a current flowing through the neutral line close to zero, or a potential of the neutral line of the three-phase output voltages close to a voltage which is exactly the middle between voltages o

Abstract: A method of manufacturing a semiconductor device using a wiring substrate is provided which can facilitate the handling of the wiring substrate. The method includes the steps of forming a peelable resin layer on a silicon substrate, forming the wiring substrate on the peelable resin layer, mounting semiconductor chips on the wiring substrate, forming semiconductor devices by sealing the plurality of semiconductor chips by a sealing resin, individualizing the semiconductor devices by dicing the semiconductor devices from the sealing resin side but leaving the silicon substrate, peeling each of the individualized semiconductor devices from the silicon substrate between the silicon substrate and the peelable resin layer, and exposing terminals on the wiring substrate by forming openings through the peelable resin layer or by removing the peelable resin layer.

Abstract: A semiconductor device substrate has fine terminals with a small pitch and is able to be easily produced at a low cost without using a special process. A mounting terminal has a pyramidal shape and extending between a front surface and a back surface of a silicon substrate. An end of the mounting terminal protrudes from the back surface of the silicon substrate. A wiring layer is formed on the front surface of the silicon substrate. The wiring layer includes a conductive layer that is electrically connected to the mounting terminal.

Abstract: For an interval in which an Op-vector and a b-vector are successively output among intervals of output voltage vectors of each phase within a PWM cycle, the output times of each vector are divided by a positive integer m to find divided times of each vector, and the Op-vector and the b-vector are each alternately output for the divided time, each vector being output m times. For an interval in which an On-vector and an a-vector are successively output, the output times of each vector are divided by a positive integer n to find divided times of each vector, and the On-vector and a-vector are each alternately output for the divided time, each vector being output n times. The adoption of this method enables dispersion of the frequency component of current ripple that arises from PWM pulses (1)-(3).