Abstract: The present application discloses a display panel and method of manufacturing thereof. The display panel of the present application includes a substrate, an active switch, a color photoresist layer, a first electrode layer, a light emitting diode, a second electrode layer, an encapsulation layer and a driver circuit. The light emitting diode includes a red light emitting layer, a green light emitting layer and a blue light emitting layer which includes a silicon-germanium quantum dot material.

Abstract: This application discloses a display panel, a method for manufacturing a display panel, and a display device. The display panel includes an organic electroluminescent device. The organic electroluminescent device includes an emission layer. The emission layer includes a main body made of mesoporous silica and a dopant made of an organic small molecule luminescent material. The dopant is arranged in the main body.

Abstract: The present disclosure provides a photosensitive device, including: a photosensitive layer (1) formed by stacking a plurality of fillers, each of the fillers being a uniformly distributed nanopore structure, the nanopore structure being filled with gaseous selenium; a first electrode (2) provided on a light incident side of the photosensitive layer (1); and a second electrode (3) provided on a light exit side of the photosensitive layer (1). The present disclosure further provides an X-ray detector and a display device.

Abstract: The present application relates to a light-emitting device, comprising an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and a cathode, which are stacked in sequence, wherein the light-emitting layer comprises N stacked light-emitting units; each light-emitting unit comprises a thermal activation delayed fluorescent material layer and a quantum dot material layer; the light emitted from the thermal activation delayed fluorescent material layer and the light emitted from the quantum dot material layer are synthesized into white light.

Abstract: The present application relates to an active switch, a manufacturing method thereof and a display device. The manufacturing method of the active switch includes: sequentially forming a gate electrode, a gate insulating layer, an active layer, a semiconductor composite layer and a source electrode and a drain electrode on a substrate. The semiconductor composite layer includes a first N-type heavily doped amorphous silicon layer, a first N-type lightly doped amorphous silicon layer, a second N-type heavily doped amorphous silicon layer and a second N-type lightly doped amorphous silicon layer which are sequentially stacked, where the ion doping concentration of the first N-type heavily doped amorphous silicon layer is lower than that of the second N-type heavily doped amorphous silicon layer, and the ion doping concentration of the first N-type lightly doped amorphous silicon layer is higher than that of the second N-type lightly doped amorphous silicon layer.

Abstract: A display device and a touch controller are disclosed. The display device includes a protective screen, a display panel, a photosensitive element, and a light-concentrating element. The protective screen is arranged on a light-emitting surface of the display device. The photosensitive element is arranged between the display panel and the protective screen. The photosensitive element includes a photosensitive surface that receives light, and a light-concentrating element is arranged on the photosensitive surface of the photosensitive element.

Abstract: The present application discloses a display panel preparation method and a display panel. The display panel preparation method includes: forming a first metal layer, a buffer layer, an oxide film layer, and a gate insulating layer on a substrate; and etching on a second layer of metal by using a same mask process, to obtain a gate layer, a source layer, and a drain layer.

Abstract: A method of manufacturing a thin film transistor and a display device are disclosed. The method includes: forming a gate metal layer, a gate insulating layer, an active layer, an ohmic contact layer sequentially on a substrate; producing a photoresist layer on the metal layer where the portion of the photoresist layer at the channel region has a smaller thickness than other portions; a first wet etching in which the metal layer corresponding to the photoresist layer is obtained; a first drying etching in which the active layer and ohmic contact layer corresponding to the photoresist layer are Obtained; a second wet etching in which the portion of the metal layer corresponding to the channel region removed; and a second dry etching in which the portion of the active layer corresponding to the channel region is made to have a smaller thickness than other portions of the active layer.

Abstract: Disclosed are an X-ray detector, a method for manufacturing an X-ray detector and a medical equipment. The X-ray detector includes a scintillator (10); a photosensitive layer (80) including a photoelectric conversion layer (90) and a transparent conductive film (40) located between the scintillator (10) and the photoelectric conversion layer (90); the photoelectric conversion layer (90) being a uniform porous structure, and a pore of the photoelectric conversion layer being filled with a silicon particle (92); a signal reading device electrically connected to the photosensitive layer (80); and a light shielding member (30) corresponding to a position of an active layer (70) of the signal reading device to shield an incident light from the active layer (70).

Abstract: The present disclosure provides a display panel and a manufacturing method for the display panel. The display panel includes a substrate, a switch assembly disposed on the substrate, and a light-sensing assembly disposed on a side of the switch assembly. The switch assembly comprises an indium gallium zinc oxide (IGZO) layer.

Abstract: The present application discloses a display panel and a display device. The display panel includes a substrate; an active switch, which is arrange on the substrate and includes a first active switch and a second active switch; a pixel, which is arrange on the substrate and coupled to the first active switch and includes a quantum dot light-emitting diode; and a light sensor, which is arrange on the substrate and coupled to the second active switch and includes a quantum dot light sensing layer.

Abstract: This application discloses a mask and a manufacture method thereof, including: a full shielding area, made of a light shielding material; a semi-transparent area, where there is at least one semi-transparent area and the semi-transparent area allows transmission of partial light, and a main body of the semi-transparent area is made of semi-transparent films, and full shielding structures are arranged in the semi-transparent films.

Abstract: This disclosure provides an array substrate and a method of manufacturing the same. The method includes: forming a switch element; etching on an extension of a gate insulation layer to obtain a second amorphous silicon layer, a second N-type amorphous silicon layer and a light sensing metal at the same time to form a photosensor; forming a light sensing layer and a passivation layer on a source metal, a drain metal, and the light sensing metal; and forming a first light sensing layer and a first passivation layer on the source metal and the drain metal, and forming a second light sensing layer and a second passivation layer on the light sensing metal by using a second mask.

Abstract: The present application discloses a display panel, a display device and a manufacturing method. The display panel includes light-emitting diodes. The light-emitting diodes includes a blue luminescent layer. The blue luminescent layer includes a germanium silicon quantum dot material. A proportion range of a silicon element in the light-emitting diodes is 65%-90%, and a proportion range of a germanium element is 10%-35%.

Abstract: A display panel, a manufacturing method thereof and a display device are provided. The display panel includes a substrate and a plurality of active switches disposed on the substrate. The active switch includes a gate layer disposed on a bottom portion. The gate layer is wound with an insulation medium layer, and the insulation medium layer includes a light-obstructing layer disposed on a side portion of the gate layer.

Abstract: The present disclosure discloses a manufacturing method for an array substrate and an array substrate. The method includes: forming a gate electrode, a gate insulating layer, a semiconductor layer, a source drain electrode layer and a photoresist layer on a substrate; patterning the photoresist layer to form a patterned photoresist layer; performing at least one wet etching on the source drain electrode layer and performing at least one dry etching on the semiconductor layer; performing an ashing processing between the steps of the wet etching and the dry etching. A ratio of a lateral etching rate to a longitudinal etching rate in the at least one ashing processing ranges from 1:0.9 to 1:1.5.

Abstract: The present disclosure provides a display panel and a manufacturing method for the display panel. The display panel includes a substrate, a switch assembly disposed on the substrate, and a light-sensing assembly disposed on a side of the switch assembly. The switch assembly comprises an indium gallium zinc oxide (IGZO) layer.

Abstract: A display panel includes a first substrate, a second substrate, active switches, pixel electrodes, a color filter layer, a light-obstructing layer, a control chip and at least one photosensor. The second substrate is disposed opposite to the first substrate. The active switches are disposed on the second substrate, and each of them comprises an electro-conductive channel. The pixel electrodes are disposed on the second substrate and coupled to the active switches. The color filter layer is disposed on the second substrate and corresponded to the pixel electrodes. The light-obstructing layer is disposed on the first substrate and disposed in correspondence with the electro-conductive channel. The light-obstructing layer covers the electro-conductive channel and is made of an electro-conductive material. The control chip is coupled to the light-obstructing layer. The photosensor is disposed between the first substrate and the light-obstructing layer.

Abstract: The present application discloses a test structure, a substrate and a method for manufacturing the substrate. The substrate includes a stacked substratum, a metal layer and an insulating layer; first via holes and second via holes disposed in different areas and passing through the insulating layer, and first transparent electrodes and second transparent electrodes disposed in different via holes and connected with the metal layer. The first via holes and the second via holes are formed through the same manufacture procedure, and the first transparent electrodes and the second transparent electrodes are formed through the same manufacture procedure.

Abstract: The present disclosure relates to an insulation unit based on an array substrate and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display mechanism. The method for manufacturing the insulation unit based on the array substrate includes: providing an aluminum layer on a substrate; and anodizing the aluminum layer to oxidize the aluminum layer to form the insulation unit. The method for manufacturing the insulation unit based on the array substrate can manufacture an insulation unit with a better corrosion resistance.