Abstract: A display panel includes a first substrate, a second substrate, active switches, pixel electrodes, a color filter layer, a light-obstructing layer, a control chip and at least one photosensor. The second substrate is disposed opposite to the first substrate. The active switches are disposed on the second substrate, and each of them comprises an electro-conductive channel. The pixel electrodes are disposed on the second substrate and coupled to the active switches. The color filter layer is disposed on the second substrate and corresponded to the pixel electrodes. The light-obstructing layer is disposed on the first substrate and disposed in correspondence with the electro-conductive channel. The light-obstructing layer covers the electro-conductive channel and is made of an electro-conductive material. The control chip is coupled to the light-obstructing layer. The photosensor is disposed between the first substrate and the light-obstructing layer.

Abstract: The present application provides a display panel and a method for manufacturing the same. The method includes: forming a groove right above a gate electrode and a first through hole above a substrate on a photoresist layer by using a halftone photomask with multi-transmittance and dividing the photoresist layer into a first region and a second region through the first through hole.

Abstract: The present application discloses a display panel and method of manufacturing thereof. The display panel of the present application includes a substrate, an active switch, a color photoresist layer, a first electrode layer, a light emitting diode, a second electrode layer, an encapsulation layer and a driver circuit. The light emitting diode includes a red light emitting layer, a green light emitting layer and a blue light emitting layer which includes a silicon-germanium quantum dot material.

Abstract: The present application discloses a display panel and a display device apparatus. The display panel includes a substrate, the substrate includes a plurality of pixel regions; an active switch, a plurality of active switches disposed on the substrate, wherein the pixel regions are disposed on the active switches, the active switches are corresponding to each of the pixel regions, respectively, and each of the active switch includes: an insulating layer, the insulating layer includes at least two thin film layers, the thin film layers are formed by chemical vapor deposition process with a predetermined thickness.

Abstract: A display panel, a manufacturing method thereof and a display device are provided. The display panel includes a substrate and a plurality of active switches disposed on the substrate. The active switch includes a gate layer disposed on a bottom portion. The gate layer is wound with an insulation medium layer, and the insulation medium layer includes a light-obstructing layer disposed on a side portion of the gate layer.

Abstract: The present disclosure provides a method for manufacturing an active switch array substrate, and the active switch array substrate, the method includes: providing a substrate; coating a first metal layer on the substrate; forming a gate electrode by treating the first metal layer; depositing an amorphous silicon layer on the substrate and the gate electrode; coating a second metal layer on the amorphous silicon layer; forming a patterned second metal layer; coating a passivation layer on the patterned second metal layer; forming a through hole in the passivation layer; coating a light permeability conductive layer on the passivation layer; and carrying out a fourth photolithography process to the light permeability conductive layer, the passivation layer, and the patterned second metal layer, to form a channel, a source electrode, and a drain electrode on the light permeability conductive layer, the passivation layer, and the patterned second metal layer.

Abstract: This application discloses a mask and a manufacture method thereof, including: a full shielding area, made of a light shielding material; a semi-transparent area, where there is at least one semi-transparent area and the semi-transparent area allows transmission of partial light, and a main body of the semi-transparent area is made of semi-transparent films, and full shielding structures are arranged in the semi-transparent films.

Abstract: The present application discloses a display device, including a first substrate, provided with a plurality of active switches thereon; a second substrate, disposed opposite to the first substrate, where a plurality of liquid crystal molecules are disposed between the second substrate and the first substrate; and a control component, including a backlight module, where the backlight module is disposed on one side of the first substrate away from the second substrate, and the backlight module includes a quantum dot film.

Abstract: The present application provides a display panel and a display device. The display panel includes a substrate; an active switch, which is disposed on the substrate and includes a first active switch, a second active switch, and an indium gallium zinc oxide layer; a pixel, which is disposed on the substrate and coupled to the first active switch and includes a quantum dot light-emitting diode; and a light sensor, which is disposed on the substrate and coupled to the second active switch and includes a quantum dot light sensing layer; where the active switch includes a gate layer, a gate insulating layer, the indium gallium zinc oxide layer, an etch stop layer, a metal layer, and a pixel electrode layer which are sequentially arranged on the substrate.

Abstract: A display panel comprises a substrate, active switches and light-emitting diodes formed on the substrate. The active switches are disposed between the substrate and the light-emitting diodes. Each light-emitting diode comprises a first electrode, a second electrode, and a quantum dot luminescent layer. The quantum dot luminescent layer comprises a mesoporous frame. The mesoporous frame adopts a self-assembling form, the mesoporous frame serves as a main material, and quantum dots are disposed in the mesoporous frame. The first electrode, the quantum dot luminescent layer and the second electrode are stacked in order. Since the quantum dots are disposed in the mesoporous frame, the sizes of the quantum dots and the uniformity of their arrangement are adjusted and controlled, the light-emitting diodes with different luminous colors depending on the sizes of the quantum dots are then adjusted.

Abstract: This disclosure provides an array substrate and a method of manufacturing the same. The method includes: forming a switch element; etching on an extension of a gate insulation layer to obtain a second amorphous silicon layer, a second N-type amorphous silicon layer and a light sensing metal at the same time to form a photosensor; forming a light sensing layer and a passivation layer on a source metal, a drain metal, and the light sensing metal; and forming a first light sensing layer and a first passivation layer on the source metal and the drain metal, and forming a second light sensing layer and a second passivation layer on the light sensing metal by using a second mask.

Abstract: Disclosed by the embodiments of the present application are a semiconductor testing method and testing device; the testing method comprises the steps of: exciting a test sample by means of a pulse laser to generate a photoconductive effect; detecting weak information of the photoconductive effect; obtaining a composite lifetime of unbalanced carriers of the test sample by means of analyzing the photoconductive effect and the weak information. The testing device comprises: a pulse laser emitter, a microwave generator, a microwave receiver, and a calculation device.

Abstract: An array substrate and a manufacturing method thereof are provided. The manufacturing method includes steps of: providing a first substrate; providing a first mask and arranging active switches on the first substrate; providing a second mask, forming a photoresist layer on the active switches and sequentially performing following steps of: performing a first wet etching on the active switches, performing a first ashing treatment on the photoresist layer, performing a first dry etching on the active switches, performing a second wet etching on the active switches, performing a second ashing treatment on the photoresist layer and performing a second dry etching on the active switches; providing a third mask and forming a protective layer on a metal layer of the active switches; and providing a fourth mask and forming a pixel electrode layer on the protective layer.

Abstract: The present disclosure provides a display panel and a manufacturing method for the display panel. The display panel includes a substrate, a switch assembly disposed on the substrate, and a light-sensing assembly disposed on a side of the switch assembly. The switch assembly comprises an indium gallium zinc oxide (IGZO) layer.

Abstract: A method of manufacturing an active array substrate, comprising: providing a substrate; forming gate electrodes on the substrate; forming a gate insulating layer, a semiconductor layer and an Ohmic contact layer on the transparent substrate and the gate electrodes in order; forming source electrodes and drain electrodes on the Ohmic contact layer; forming a protection layer on the source electrodes and the drain electrodes; and forming a pixel electrode layer on the protection layer, wherein the pixel electrode layer is electrically connected to the drain electrode. The gate insulating layer comprises nanometer porous silicon and nanometer particles, and a dielectric constant of the nanometer particle is greater than a dielectric constant of the nanometer porous silicon.

Abstract: The present application provides a display panel and a method for manufacturing the same. The method includes: forming a groove right above a gate electrode and a first through hole above a substrate on a photoresist layer by using a halftone photomask with multi-transmittance and dividing the photoresist layer into a first region and a second region through the first through hole.

Abstract: A display panel and a display device are provided. The display panel includes a substrate; a first metal layer disposed on the substrate; an insulating layer disposed on the first metal layer; a semiconductor layer disposed on the insulating layer and including a germanium-doped semiconductor compound; and a second metal layer disposed on the semiconductor layer. A mobility of the semiconductor compound is greater than a mobility of amorphous silicon.

Abstract: A display panel includes a substrate, active switches disposed on the substrate, a color filter layer disposed on the substrate, and a passivation layer disposed on the substrate, wherein the passivation layer covers the substrate, the active switches, and the color filter layer.

Abstract: An array substrate and a manufacturing method thereof are provided. The manufacturing method includes steps of: providing a first substrate; providing a first mask and arranging active switches on the first substrate; providing a second mask, forming a photoresist layer on the active switches and sequentially performing following steps of: performing a first wet etching on the active switches, performing a first ashing treatment on the photoresist layer, performing a first dry etching on the active switches, performing a second wet etching on the active switches, performing a second ashing treatment on the photoresist layer and performing a second dry etching on the active switches; providing a third mask and forming a protective layer on a metal layer of the active switches; and providing a fourth mask and forming a pixel electrode layer on the protective layer.

Abstract: The present application discloses a display panel and a display device apparatus. The display panel includes a substrate, the substrate includes a plurality of pixel regions; an active switch, a plurality of active switches disposed on the substrate, wherein the pixel regions are disposed on the active switches, the active switches are corresponding to each of the pixel regions, respectively, and each of the active switch includes: an insulating layer, the insulating layer includes at least two thin film layers, the thin film layers are formed by chemical vapor deposition process with a predetermined thickness.